1. A device comprising: an active layer sandwiched between first and second semiconductor layers of opposite types, said active layer emitting light of a predetermined wavelength when holes and electrons combine therein; a mirror layer in contact with a surface of said second semiconductor layer that is not in contact with said active layer, said mirror having a surface area substantially equal to that of said active layer; and a base member having a first surface in contact with said mirror layer and having an area substantially equal to that of said mirror layer, said base member having a cross-sectional area at locations distal from said first surface, said cross-section area being less than said area of said first surface.

The device of Claim I wherein said f irst layer comprises an n-GaN layer with a surface that includes scattering features having dimensions greater than said predetermined wavelength.

The device of Claim I wherein said base member has a thickness greater than 100 pm.

The device of Claim I wherein said base member comprises an electrical conductor.

A method for fab r icating a light emitting device, said method comprising: epitaxially growing a light emitting layer on a first substrate, said light emitting layer comprising an active layer sandwiched between first and second semiconductor layers of opposite types, said active layer emitting light of a predetermined wavelength when holes and electrons combine therein; depositing a reflective layer on a surface of said first semiconductor layer; bonding said reflective layer to a first surface of a conducting substrate; removing first substrate to form a structure bonded to said conducting substrate; processing a surface of said second semiconductor layer to provide a first trench extending from said surface of said second semiconductor layer through said structure: and processing a second surface of said conducting substrate to provide a second trench that extends from that surface to said trench.

1. A device comprising: an active layer sandwiched between first and second semiconductor layers of opposite types, said active layer emitting light of a predetermined wavelength when holes and electrons combine therein; a mirror layer in contact with a surface of said second semiconductor layer that is not in contact with said active layer, said mirror having a surface area substantially equal to that of said active layer; and a base member having a first surface in contact with said mirror layer and having an area substantially equal to that of said mirror layer, said base member having a cross-sectional area at locations distal from said first surface, said cross-section area being less than said area of said first surface.

The device of Claim I wherein said f irst layer comprises an n-GaN layer with a surface that includes scattering features having dimensions greater than said predetermined wavelength.

The device of Claim I wherein said base member has a thickness greater than 100 pm.

The device of Claim I wherein said base member comprises an electrical conductor.

A method for fab r icating a light emitting device, said method comprising: epitaxially growing a light emitting layer on a first substrate, said light emitting layer comprising an active layer sandwiched between first and second semiconductor layers of opposite types, said active layer emitting light of a predetermined wavelength when holes and electrons combine therein; depositing a reflective layer on a surface of said first semiconductor layer; bonding said reflective layer to a first surface of a conducting substrate; removing first substrate to form a structure bonded to said conducting substrate; processing a surface of said second semiconductor layer to provide a first trench extending from said surface of said second semiconductor layer through said structure: and processing a second surface of said conducting substrate to provide a second trench that extends from that surface to said trench.

1. A device comprising: an active layer sandwiched between first and second semiconductor layers of opposite types, said active layer emitting light of a predetermined wavelength when holes and electrons combine therein; a mirror layer in contact with a surface of said second semiconductor layer that is not in contact with said active layer, said mirror having a surface area substantially equal to that of said active layer; and a base member having a first surface in contact with said mirror layer and having an area substantially equal to that of said mirror layer, said base member having a cross-sectional area at locations distal from said first surface, said cross-section area being less than said area of said first surface.

The device of Claim I wherein said f irst layer comprises an n-GaN layer with a surface that includes scattering features having dimensions greater than said predetermined wavelength.

The device of Claim I wherein said base member has a thickness greater than 100 pm.

The device of Claim I wherein said base member comprises an electrical conductor.

A method for fab r icating a light emitting device, said method comprising: epitaxially growing a light emitting layer on a first substrate, said light emitting layer comprising an active layer sandwiched between first and second semiconductor layers of opposite types, said active layer emitting light of a predetermined wavelength when holes and electrons combine therein; depositing a reflective layer on a surface of said first semiconductor layer; bonding said reflective layer to a first surface of a conducting substrate; removing first substrate to form a structure bonded to said conducting substrate; processing a surface of said second semiconductor layer to provide a first trench extending from said surface of said second semiconductor layer through said structure: and processing a second surface of said conducting substrate to provide a second trench that extends from that surface to said trench.

1. A device comprising: an active layer sandwiched between first and second semiconductor layers of opposite types, said active layer emitting light of a predetermined wavelength when holes and electrons combine therein; a mirror layer in contact with a surface of said second semiconductor layer that is not in contact with said active layer, said mirror having a surface area substantially equal to that of said active layer; and a base member having a first surface in contact with said mirror layer and having an area substantially equal to that of said mirror layer, said base member having a cross-sectional area at locations distal from said first surface, said cross-section area being less than said area of said first surface.

The device of Claim I wherein said f irst layer comprises an n-GaN layer with a surface that includes scattering features having dimensions greater than said predetermined wavelength.

The device of Claim I wherein said base member has a thickness greater than 100 pm.

The device of Claim I wherein said base member comprises an electrical conductor.

A method for fab r icating a light emitting device, said method comprising: epitaxially growing a light emitting layer on a first substrate, said light emitting layer comprising an active layer sandwiched between first and second semiconductor layers of opposite types, said active layer emitting light of a predetermined wavelength when holes and electrons combine therein; depositing a reflective layer on a surface of said first semiconductor layer; bonding said reflective layer to a first surface of a conducting substrate; removing first substrate to form a structure bonded to said conducting substrate; processing a surface of said second semiconductor layer to provide a first trench extending from said surface of said second semiconductor layer through said structure: and processing a second surface of said conducting substrate to provide a second trench that extends from that surface to said trench.