Patent
US 8,221,884INCORPORATION OF FUNCTIONALIZING MOLECULES IN NANO-PATTERNED EPITAXIAL GRAPHENE ELECTRONICS
Walt A. DeHeer
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,221,884Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-I G are schematic diagrams showing a series of process steps according to one illustrative embodiment of the invention. [0027]
FIG. 2A-2C are schematic diagrams showing a series of process steps according to a second illustrative embodiment of the invention. [0028]
FIG. 3A-3F are plan view schematic diagrams showing a plurality of devices according to one embodiment of the invention. [0029]
FIG. 4A is a top perspective view of a stair-stepped crystal with a graphitic thin film. [0030]
FIG. 5 is a schematic diagram of an experimental apparatus with which may be used for annealing a graphitic film. [0032]
FIGS. 6A-E are schematic diagrams of several exemplary configurations of devices made according to the invention, taking into account crystal lattice …
FIG. 7 is a schematic diagram of a portion of a graphene sheet with functionalized edges. [0034]
FIG. 8 is a schematic diagram of two separate graphene structures that are bridged with functionalizing molecules. [0035]
FIGS. 9A-F are a series of schematic diagrams showing formation of a graphene- based field effect transistor.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A functional structure, comprising: a. a crystalline substrate having a preselected crystal face; b. a thin-film graphitic layer disposed on the preselected crystal face, the thin-film graphitic layer patterned so as to define at least one functional structure; and c. a functionalizing molecule bound to a portion of the graphitic layer so as to modify an electrical property of the portion of the graphitic layer.
The functional structure of Claim 1, wherein the functionalizing molecule is bound to an edge of the graphitic layer.
The functional structure of Claim 1, wherein the functionalizing molecule is bound to a surface of the graphitic layer.
The functional structure of Claim 1, wherein the functional structure includes two spaced apart portions, each portion including an edge, wherein the functionalizing molecule is bound to both of the edges, thereby bridging the two portions.
The functional structure of Claim 1, wherein the functionalizing molecule comprises an organic molecule.
The functional structure of Claim 1, wherein the functionalizing molecule comprises an oxide.
The functional structure of Claim 1, wherein the functionalizing molecule comprises a fluoride.
Layer stacks claimed or described, ordered top of device to substrate.
functional graphitic structure
graphene field-effect transistor
Materials described outside the worked examples.
crystalline substrate
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 9A-F are a series of schematic diagrams showing formation of a graphene- based field effect transistor.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–20 minutes | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,221,884Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-I G are schematic diagrams showing a series of process steps according to one illustrative embodiment of the invention. [0027]
FIG. 2A-2C are schematic diagrams showing a series of process steps according to a second illustrative embodiment of the invention. [0028]
FIG. 3A-3F are plan view schematic diagrams showing a plurality of devices according to one embodiment of the invention. [0029]
FIG. 4A is a top perspective view of a stair-stepped crystal with a graphitic thin film. [0030]
FIG. 5 is a schematic diagram of an experimental apparatus with which may be used for annealing a graphitic film. [0032]
FIGS. 6A-E are schematic diagrams of several exemplary configurations of devices made according to the invention, taking into account crystal lattice …
FIG. 7 is a schematic diagram of a portion of a graphene sheet with functionalized edges. [0034]
FIG. 8 is a schematic diagram of two separate graphene structures that are bridged with functionalizing molecules. [0035]
FIGS. 9A-F are a series of schematic diagrams showing formation of a graphene- based field effect transistor.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A functional structure, comprising: a. a crystalline substrate having a preselected crystal face; b. a thin-film graphitic layer disposed on the preselected crystal face, the thin-film graphitic layer patterned so as to define at least one functional structure; and c. a functionalizing molecule bound to a portion of the graphitic layer so as to modify an electrical property of the portion of the graphitic layer.
The functional structure of Claim 1, wherein the functionalizing molecule is bound to an edge of the graphitic layer.
The functional structure of Claim 1, wherein the functionalizing molecule is bound to a surface of the graphitic layer.
The functional structure of Claim 1, wherein the functional structure includes two spaced apart portions, each portion including an edge, wherein the functionalizing molecule is bound to both of the edges, thereby bridging the two portions.
The functional structure of Claim 1, wherein the functionalizing molecule comprises an organic molecule.
The functional structure of Claim 1, wherein the functionalizing molecule comprises an oxide.
The functional structure of Claim 1, wherein the functionalizing molecule comprises a fluoride.
Layer stacks claimed or described, ordered top of device to substrate.
functional graphitic structure
graphene field-effect transistor
Materials described outside the worked examples.
crystalline substrate
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 9A-F are a series of schematic diagrams showing formation of a graphene- based field effect transistor.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–20 minutes | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,221,884Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-I G are schematic diagrams showing a series of process steps according to one illustrative embodiment of the invention. [0027]
FIG. 2A-2C are schematic diagrams showing a series of process steps according to a second illustrative embodiment of the invention. [0028]
FIG. 3A-3F are plan view schematic diagrams showing a plurality of devices according to one embodiment of the invention. [0029]
FIG. 4A is a top perspective view of a stair-stepped crystal with a graphitic thin film. [0030]
FIG. 5 is a schematic diagram of an experimental apparatus with which may be used for annealing a graphitic film. [0032]
FIGS. 6A-E are schematic diagrams of several exemplary configurations of devices made according to the invention, taking into account crystal lattice …
FIG. 7 is a schematic diagram of a portion of a graphene sheet with functionalized edges. [0034]
FIG. 8 is a schematic diagram of two separate graphene structures that are bridged with functionalizing molecules. [0035]
FIGS. 9A-F are a series of schematic diagrams showing formation of a graphene- based field effect transistor.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A functional structure, comprising: a. a crystalline substrate having a preselected crystal face; b. a thin-film graphitic layer disposed on the preselected crystal face, the thin-film graphitic layer patterned so as to define at least one functional structure; and c. a functionalizing molecule bound to a portion of the graphitic layer so as to modify an electrical property of the portion of the graphitic layer.
The functional structure of Claim 1, wherein the functionalizing molecule is bound to an edge of the graphitic layer.
The functional structure of Claim 1, wherein the functionalizing molecule is bound to a surface of the graphitic layer.
The functional structure of Claim 1, wherein the functional structure includes two spaced apart portions, each portion including an edge, wherein the functionalizing molecule is bound to both of the edges, thereby bridging the two portions.
The functional structure of Claim 1, wherein the functionalizing molecule comprises an organic molecule.
The functional structure of Claim 1, wherein the functionalizing molecule comprises an oxide.
The functional structure of Claim 1, wherein the functionalizing molecule comprises a fluoride.
Layer stacks claimed or described, ordered top of device to substrate.
functional graphitic structure
graphene field-effect transistor
Materials described outside the worked examples.
crystalline substrate
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 9A-F are a series of schematic diagrams showing formation of a graphene- based field effect transistor.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–20 minutes | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,221,884Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-I G are schematic diagrams showing a series of process steps according to one illustrative embodiment of the invention. [0027]
FIG. 2A-2C are schematic diagrams showing a series of process steps according to a second illustrative embodiment of the invention. [0028]
FIG. 3A-3F are plan view schematic diagrams showing a plurality of devices according to one embodiment of the invention. [0029]
FIG. 4A is a top perspective view of a stair-stepped crystal with a graphitic thin film. [0030]
FIG. 5 is a schematic diagram of an experimental apparatus with which may be used for annealing a graphitic film. [0032]
FIGS. 6A-E are schematic diagrams of several exemplary configurations of devices made according to the invention, taking into account crystal lattice …
FIG. 7 is a schematic diagram of a portion of a graphene sheet with functionalized edges. [0034]
FIG. 8 is a schematic diagram of two separate graphene structures that are bridged with functionalizing molecules. [0035]
FIGS. 9A-F are a series of schematic diagrams showing formation of a graphene- based field effect transistor.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A functional structure, comprising: a. a crystalline substrate having a preselected crystal face; b. a thin-film graphitic layer disposed on the preselected crystal face, the thin-film graphitic layer patterned so as to define at least one functional structure; and c. a functionalizing molecule bound to a portion of the graphitic layer so as to modify an electrical property of the portion of the graphitic layer.
The functional structure of Claim 1, wherein the functionalizing molecule is bound to an edge of the graphitic layer.
The functional structure of Claim 1, wherein the functionalizing molecule is bound to a surface of the graphitic layer.
The functional structure of Claim 1, wherein the functional structure includes two spaced apart portions, each portion including an edge, wherein the functionalizing molecule is bound to both of the edges, thereby bridging the two portions.
The functional structure of Claim 1, wherein the functionalizing molecule comprises an organic molecule.
The functional structure of Claim 1, wherein the functionalizing molecule comprises an oxide.
The functional structure of Claim 1, wherein the functionalizing molecule comprises a fluoride.
Layer stacks claimed or described, ordered top of device to substrate.
functional graphitic structure
graphene field-effect transistor
Materials described outside the worked examples.
crystalline substrate
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 9A-F are a series of schematic diagrams showing formation of a graphene- based field effect transistor.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–20 minutes | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
graphene
functionalizing molecule
polyene
carbon nanotube
polycyclic aromatic hydrocarbon
oxide
fluoride
hydrogen gas
H₂
oxygen plasma
| — |
Thickness | 1–100 nm | — |
Pressure | 0.000001 Torr | — |
Pressure | 10–10 Torr | — |
Thickness | ≥ 1 nm | — |
graphene
functionalizing molecule
polyene
carbon nanotube
polycyclic aromatic hydrocarbon
oxide
fluoride
hydrogen gas
H₂
oxygen plasma
| — |
Thickness | 1–100 nm | — |
Pressure | 0.000001 Torr | — |
Pressure | 10–10 Torr | — |
Thickness | ≥ 1 nm | — |
graphene
functionalizing molecule
polyene
carbon nanotube
polycyclic aromatic hydrocarbon
oxide
fluoride
hydrogen gas
H₂
oxygen plasma
| — |
Thickness | 1–100 nm | — |
Pressure | 0.000001 Torr | — |
Pressure | 10–10 Torr | — |
Thickness | ≥ 1 nm | — |
graphene
functionalizing molecule
polyene
carbon nanotube
polycyclic aromatic hydrocarbon
oxide
fluoride
hydrogen gas
H₂
oxygen plasma
| — |
Thickness | 1–100 nm | — |
Pressure | 0.000001 Torr | — |
Pressure | 10–10 Torr | — |
Thickness | ≥ 1 nm | — |