Patent
US 8,304,760OF THE INVENTION
An Chen
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,304,760Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B depict a process of forming a layer of material (e.g., graphene) of small scale, for example, that can be used to form a graphene-based …
FIGS. 2A and 2B depict a process of forming a layer of material (e.g., graphene) of small scale having a varying shape, for example, that can be used to form a …
FIGS. 3A and 3B depict a process of forming layers of material (e.g., graphene) of small scale on a recessed structure, for example, that can be used to form a …
FIG. 4 depicts a perspective view of a graphene-based, FinFET-like, field effect transistor utilizing a sidewall graphene layer, according to an embodiment of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: a structure having a sidewall surface, said structure being formed as a first mesa structure provided on a substrate and having a first length and a second mesa structure provided on said first mesa structure and having a second length that differs from the first length, said second mesa structure adjoining said first mesa structure to form said sidewall surface, said sidewall surface being continuous and planar, and having a varying height dimension and a varying length dimension; a layer of material provided on said sidewall surface, said layer of material having a varying width dimension and a varying length dimension corresponding to the varying height dimension and the varying length dimension of said sidewall surface, respectively; and a device structure provided in contact with said layer of material s wherein said la v er of material is a graphene la y er.
The device according to claim 1, wherein said first mesa structure and said second mesa structure are formed by etching said substrate.
The device according to claim 1, wherein said structure is formed of a carbon-containing graphene precursor material.
The device according to claim 1, wherein: said structure having the sidewall surface is formed of a carbon-containing graphene precursor material; and said layer of material on said sidewall surface is formed by thermally decomposing said carbon-containing graphene precursor material to form a graphene layer.
canceled
canceled
canceled
-13. canceled
canceled
canceled
canceled
canceled
canceled
A device comprising: a structure having a sidewall surface, said sidewall surface being continuous and planar, and said sidewall surface having a varying height dimension and a varying length dimension; a layer of material provided on said sidewall surface, said layer of material having a varying width dimension and a varying length dimension corresponding to the varying height dimension and the varying length dimension of said sidewall surface, respectively; and a device structure provided in contact with said layer of material, wherein said structure is a first mesa structure provided on a substrate, and a second mesa structure provided on said first mesa structure, or wherein said structure is a first recessed structure extending within said substrate, and a second recessed structure extending within said substrate, and wherein said la v er of material is a graphene la y er.
The device according to claim 14, wherein said structure is formed by etching said substrate. withdrawn
The device according to claim 14, wherein said structure is formed of a carbon-containing graphene precursor material. withdrawn
The device according to claim 14, wherein said structure has a second sidewall surface, said device further comprising: a second layer of material on said second sidewall surface, wherein said second layer of material is configured to be provided in contact with a second device structure. withdrawn
The device according to claim 14, wherein: said structure having the sidewall surface is formed of a carbon-containing graphene precursor material; and said layer of material on said sidewall surface is formed by thermally decomposing said carbon-containing graphene precursor material to form a graphene layer. withdrawn
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
sidewall graphene device on mesa structure
sidewall graphene device on recessed structure
Materials described outside the worked examples.
graphene layer
carbon-containing graphene precursor material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 depicts a perspective view of a graphene-based, FinFET-like, field effect transistor utilizing a sidewall graphene layer, according to an embodiment of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene mobility exceeding 200,000 cm2/V·s | ≤ 200000 cm2/V·s | graphene layer |
Thickness | ≤ 10 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,304,760Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B depict a process of forming a layer of material (e.g., graphene) of small scale, for example, that can be used to form a graphene-based …
FIGS. 2A and 2B depict a process of forming a layer of material (e.g., graphene) of small scale having a varying shape, for example, that can be used to form a …
FIGS. 3A and 3B depict a process of forming layers of material (e.g., graphene) of small scale on a recessed structure, for example, that can be used to form a …
FIG. 4 depicts a perspective view of a graphene-based, FinFET-like, field effect transistor utilizing a sidewall graphene layer, according to an embodiment of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: a structure having a sidewall surface, said structure being formed as a first mesa structure provided on a substrate and having a first length and a second mesa structure provided on said first mesa structure and having a second length that differs from the first length, said second mesa structure adjoining said first mesa structure to form said sidewall surface, said sidewall surface being continuous and planar, and having a varying height dimension and a varying length dimension; a layer of material provided on said sidewall surface, said layer of material having a varying width dimension and a varying length dimension corresponding to the varying height dimension and the varying length dimension of said sidewall surface, respectively; and a device structure provided in contact with said layer of material s wherein said la v er of material is a graphene la y er.
The device according to claim 1, wherein said first mesa structure and said second mesa structure are formed by etching said substrate.
The device according to claim 1, wherein said structure is formed of a carbon-containing graphene precursor material.
The device according to claim 1, wherein: said structure having the sidewall surface is formed of a carbon-containing graphene precursor material; and said layer of material on said sidewall surface is formed by thermally decomposing said carbon-containing graphene precursor material to form a graphene layer.
canceled
canceled
canceled
-13. canceled
canceled
canceled
canceled
canceled
canceled
A device comprising: a structure having a sidewall surface, said sidewall surface being continuous and planar, and said sidewall surface having a varying height dimension and a varying length dimension; a layer of material provided on said sidewall surface, said layer of material having a varying width dimension and a varying length dimension corresponding to the varying height dimension and the varying length dimension of said sidewall surface, respectively; and a device structure provided in contact with said layer of material, wherein said structure is a first mesa structure provided on a substrate, and a second mesa structure provided on said first mesa structure, or wherein said structure is a first recessed structure extending within said substrate, and a second recessed structure extending within said substrate, and wherein said la v er of material is a graphene la y er.
The device according to claim 14, wherein said structure is formed by etching said substrate. withdrawn
The device according to claim 14, wherein said structure is formed of a carbon-containing graphene precursor material. withdrawn
The device according to claim 14, wherein said structure has a second sidewall surface, said device further comprising: a second layer of material on said second sidewall surface, wherein said second layer of material is configured to be provided in contact with a second device structure. withdrawn
The device according to claim 14, wherein: said structure having the sidewall surface is formed of a carbon-containing graphene precursor material; and said layer of material on said sidewall surface is formed by thermally decomposing said carbon-containing graphene precursor material to form a graphene layer. withdrawn
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
sidewall graphene device on mesa structure
sidewall graphene device on recessed structure
Materials described outside the worked examples.
graphene layer
carbon-containing graphene precursor material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 depicts a perspective view of a graphene-based, FinFET-like, field effect transistor utilizing a sidewall graphene layer, according to an embodiment of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene mobility exceeding 200,000 cm2/V·s | ≤ 200000 cm2/V·s | graphene layer |
Thickness | ≤ 10 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,304,760Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B depict a process of forming a layer of material (e.g., graphene) of small scale, for example, that can be used to form a graphene-based …
FIGS. 2A and 2B depict a process of forming a layer of material (e.g., graphene) of small scale having a varying shape, for example, that can be used to form a …
FIGS. 3A and 3B depict a process of forming layers of material (e.g., graphene) of small scale on a recessed structure, for example, that can be used to form a …
FIG. 4 depicts a perspective view of a graphene-based, FinFET-like, field effect transistor utilizing a sidewall graphene layer, according to an embodiment of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: a structure having a sidewall surface, said structure being formed as a first mesa structure provided on a substrate and having a first length and a second mesa structure provided on said first mesa structure and having a second length that differs from the first length, said second mesa structure adjoining said first mesa structure to form said sidewall surface, said sidewall surface being continuous and planar, and having a varying height dimension and a varying length dimension; a layer of material provided on said sidewall surface, said layer of material having a varying width dimension and a varying length dimension corresponding to the varying height dimension and the varying length dimension of said sidewall surface, respectively; and a device structure provided in contact with said layer of material s wherein said la v er of material is a graphene la y er.
The device according to claim 1, wherein said first mesa structure and said second mesa structure are formed by etching said substrate.
The device according to claim 1, wherein said structure is formed of a carbon-containing graphene precursor material.
The device according to claim 1, wherein: said structure having the sidewall surface is formed of a carbon-containing graphene precursor material; and said layer of material on said sidewall surface is formed by thermally decomposing said carbon-containing graphene precursor material to form a graphene layer.
canceled
canceled
canceled
-13. canceled
canceled
canceled
canceled
canceled
canceled
A device comprising: a structure having a sidewall surface, said sidewall surface being continuous and planar, and said sidewall surface having a varying height dimension and a varying length dimension; a layer of material provided on said sidewall surface, said layer of material having a varying width dimension and a varying length dimension corresponding to the varying height dimension and the varying length dimension of said sidewall surface, respectively; and a device structure provided in contact with said layer of material, wherein said structure is a first mesa structure provided on a substrate, and a second mesa structure provided on said first mesa structure, or wherein said structure is a first recessed structure extending within said substrate, and a second recessed structure extending within said substrate, and wherein said la v er of material is a graphene la y er.
The device according to claim 14, wherein said structure is formed by etching said substrate. withdrawn
The device according to claim 14, wherein said structure is formed of a carbon-containing graphene precursor material. withdrawn
The device according to claim 14, wherein said structure has a second sidewall surface, said device further comprising: a second layer of material on said second sidewall surface, wherein said second layer of material is configured to be provided in contact with a second device structure. withdrawn
The device according to claim 14, wherein: said structure having the sidewall surface is formed of a carbon-containing graphene precursor material; and said layer of material on said sidewall surface is formed by thermally decomposing said carbon-containing graphene precursor material to form a graphene layer. withdrawn
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
sidewall graphene device on mesa structure
sidewall graphene device on recessed structure
Materials described outside the worked examples.
graphene layer
carbon-containing graphene precursor material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 depicts a perspective view of a graphene-based, FinFET-like, field effect transistor utilizing a sidewall graphene layer, according to an embodiment of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene mobility exceeding 200,000 cm2/V·s | ≤ 200000 cm2/V·s | graphene layer |
Thickness | ≤ 10 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,304,760Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B depict a process of forming a layer of material (e.g., graphene) of small scale, for example, that can be used to form a graphene-based …
FIGS. 2A and 2B depict a process of forming a layer of material (e.g., graphene) of small scale having a varying shape, for example, that can be used to form a …
FIGS. 3A and 3B depict a process of forming layers of material (e.g., graphene) of small scale on a recessed structure, for example, that can be used to form a …
FIG. 4 depicts a perspective view of a graphene-based, FinFET-like, field effect transistor utilizing a sidewall graphene layer, according to an embodiment of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: a structure having a sidewall surface, said structure being formed as a first mesa structure provided on a substrate and having a first length and a second mesa structure provided on said first mesa structure and having a second length that differs from the first length, said second mesa structure adjoining said first mesa structure to form said sidewall surface, said sidewall surface being continuous and planar, and having a varying height dimension and a varying length dimension; a layer of material provided on said sidewall surface, said layer of material having a varying width dimension and a varying length dimension corresponding to the varying height dimension and the varying length dimension of said sidewall surface, respectively; and a device structure provided in contact with said layer of material s wherein said la v er of material is a graphene la y er.
The device according to claim 1, wherein said first mesa structure and said second mesa structure are formed by etching said substrate.
The device according to claim 1, wherein said structure is formed of a carbon-containing graphene precursor material.
The device according to claim 1, wherein: said structure having the sidewall surface is formed of a carbon-containing graphene precursor material; and said layer of material on said sidewall surface is formed by thermally decomposing said carbon-containing graphene precursor material to form a graphene layer.
canceled
canceled
canceled
-13. canceled
canceled
canceled
canceled
canceled
canceled
A device comprising: a structure having a sidewall surface, said sidewall surface being continuous and planar, and said sidewall surface having a varying height dimension and a varying length dimension; a layer of material provided on said sidewall surface, said layer of material having a varying width dimension and a varying length dimension corresponding to the varying height dimension and the varying length dimension of said sidewall surface, respectively; and a device structure provided in contact with said layer of material, wherein said structure is a first mesa structure provided on a substrate, and a second mesa structure provided on said first mesa structure, or wherein said structure is a first recessed structure extending within said substrate, and a second recessed structure extending within said substrate, and wherein said la v er of material is a graphene la y er.
The device according to claim 14, wherein said structure is formed by etching said substrate. withdrawn
The device according to claim 14, wherein said structure is formed of a carbon-containing graphene precursor material. withdrawn
The device according to claim 14, wherein said structure has a second sidewall surface, said device further comprising: a second layer of material on said second sidewall surface, wherein said second layer of material is configured to be provided in contact with a second device structure. withdrawn
The device according to claim 14, wherein: said structure having the sidewall surface is formed of a carbon-containing graphene precursor material; and said layer of material on said sidewall surface is formed by thermally decomposing said carbon-containing graphene precursor material to form a graphene layer. withdrawn
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
sidewall graphene device on mesa structure
sidewall graphene device on recessed structure
Materials described outside the worked examples.
graphene layer
carbon-containing graphene precursor material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 depicts a perspective view of a graphene-based, FinFET-like, field effect transistor utilizing a sidewall graphene layer, according to an embodiment of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene mobility exceeding 200,000 cm2/V·s | ≤ 200000 cm2/V·s | graphene layer |
Thickness | ≤ 10 nm |
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