Patent
US 10,084,102PLASMON-ENHANCED TERAHERTZ GRAPHENE-BASED PHOTODETECTOR AND METHOD OF FABRICATION
XINGHAN CAI
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,084,102Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic representation of the subject graphene-based photodetector;
FIG. 2E, for formation of the bi-metalic electrodes, the lift off mask 52 is covered on the chip. The mask 52 is a bi-layer photo-resist structure which is …
FIGS. 3A, 3D and 3G are schematic representations of optical micrographs of a graphene ribbon array without metal electrodes (
FIGS. 4B and 4C are representations of the simulated charge density profile in the graphene/metal microstructure at the plasmon resonance frequency, where the …
FIGS. 5A- S C are the diagrams representative of the attenuation at different V g normalized by the spectrum at V g, m as a function of frequency for the …
FIG. 6A is a diagram of the experimental attenuation at V g = V g, m + 6.5 V as a function of frequency (radial axis) and the incident polarization (azimuthal …
FIG. 7A is a diagram representative of the measured magnitude of the photovoltage for the subject tilted graphene ribbon array photodetector (shown in
FIG. 8 is a schematic representation of the FT I R experimental setup; and
FIG. 9 is a schematic representation of the experimental setup for measuring the photoresponse of the subject device to THz excitation.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A plasmon-enhanced terahertz graphene-based photodetector, comprising: a substrate, a microribbon array formed on said substrate, said micro-ribbon array including a plurality of graphene micro-ribbons of a predetermined width extending in a spaced apart relationship one with respect to another, and an array of electrode lines formed in electrical contact with said micro-ribbon array, said electrode lines extending in spaced apart relationship one with respect to another, wherein said micro-ribbons are sandwiched between said array of electrode lines and said substrate and extend in an angled relationship different than 90 degrees to said electrode lines.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, further including an electrolyte layer positioned atop and enveloping said micro-ribbon array and said array of electrode lines.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein said substrate is made from S i C (0001) material.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein the width of each said graphene micro-ribbons ranges from 0.6 m to 1.1 m.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein said graphene micro-ribbons extend substantially in parallel each to the other with a spacing therebetween not exceeding 2 m.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein said angled relationship between said graphene micro-ribbons and said electrode lines is determined by an angle of approximately 45 0 therebetween.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein the length of each of said graphene micro-ribbons does not exceed 7.3 m.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein each of said electrode lines are formed by at least two layers formed by different metals.
The method of fabrication of a plasmon-enhanced terahertz graphene-based photodetector, comprising: (a) patterning, on a surface of a S i C substrate, a single layer of graphene, thus forming an array of graphene micro-ribbons extending substantially in parallel each to the other, (b) forming, in electrical contact with said array of graphene micro-ribbons, an array of bimetallic electrode lines extending at an angle of approximately 45 0 relative to said graphene micro-ribbons, (c) forming source and drain terminals at the outermost bi-metallic electrode lines of said array thereof, (d) forming a gate terminal, (e) applying a layer of electrolyte atop of said array of bi-metallic electrode lines to envelope and being in contact with said array of microribbons and said array of bi-metallic electrode lines, said layer of electrolyte being coupled to the gate terminal, and (f) coupling a source of gate voltage between said source and gate terminals.
The method of Claim 16, wherein in said step (a), said graphene micro-ribbons are formed by electron beam lithography followed by oxygen plasma treatment, and wherein in said step (b), said bi-metallic electrode lines are formed by tilted-angle shadow evaporation technique.
The method of Claim 16, wherein said substrate is made of semi-insulating 6H-S i C material, and said graphene micro-ribbons are patterned in an epitaxial single layer graphene.
The method of Claim 16, wherein said electrolyte is LiC l O 4: PEO having the ratio of 0.12:1.
The method of Claim 16, further comprising: polarized in a direction perpendicular to microsized said graphene micro-ribbons, said bi-metallic transverse plasmon resonance, increasing said gate graphene's charge neutrality point, and obtaining exposing said photodetector to an incident light elements selected from a group consisting of: electrode lines, and combination thereof, to excite voltage to approximately 6.5 V relative to the photo response at said drain terminal.
Layer stacks claimed or described, ordered top of device to substrate.
plasmon-enhanced terahertz graphene-based photodetector
Materials described outside the worked examples.
graphene micro-ribbons
SiC substrate
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 3A, 3D and 3G are schematic representations of optical micrographs of a graphene ribbon array without metal electrodes (
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
gate voltage Vg relative to charge neutrality point for plasmon-enhanced photodetection | ≤ 6.5 V | graphene micro-ribbons |
graphene micro-ribbon width |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,084,102Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic representation of the subject graphene-based photodetector;
FIG. 2E, for formation of the bi-metalic electrodes, the lift off mask 52 is covered on the chip. The mask 52 is a bi-layer photo-resist structure which is …
FIGS. 3A, 3D and 3G are schematic representations of optical micrographs of a graphene ribbon array without metal electrodes (
FIGS. 4B and 4C are representations of the simulated charge density profile in the graphene/metal microstructure at the plasmon resonance frequency, where the …
FIGS. 5A- S C are the diagrams representative of the attenuation at different V g normalized by the spectrum at V g, m as a function of frequency for the …
FIG. 6A is a diagram of the experimental attenuation at V g = V g, m + 6.5 V as a function of frequency (radial axis) and the incident polarization (azimuthal …
FIG. 7A is a diagram representative of the measured magnitude of the photovoltage for the subject tilted graphene ribbon array photodetector (shown in
FIG. 8 is a schematic representation of the FT I R experimental setup; and
FIG. 9 is a schematic representation of the experimental setup for measuring the photoresponse of the subject device to THz excitation.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A plasmon-enhanced terahertz graphene-based photodetector, comprising: a substrate, a microribbon array formed on said substrate, said micro-ribbon array including a plurality of graphene micro-ribbons of a predetermined width extending in a spaced apart relationship one with respect to another, and an array of electrode lines formed in electrical contact with said micro-ribbon array, said electrode lines extending in spaced apart relationship one with respect to another, wherein said micro-ribbons are sandwiched between said array of electrode lines and said substrate and extend in an angled relationship different than 90 degrees to said electrode lines.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, further including an electrolyte layer positioned atop and enveloping said micro-ribbon array and said array of electrode lines.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein said substrate is made from S i C (0001) material.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein the width of each said graphene micro-ribbons ranges from 0.6 m to 1.1 m.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein said graphene micro-ribbons extend substantially in parallel each to the other with a spacing therebetween not exceeding 2 m.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein said angled relationship between said graphene micro-ribbons and said electrode lines is determined by an angle of approximately 45 0 therebetween.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein the length of each of said graphene micro-ribbons does not exceed 7.3 m.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein each of said electrode lines are formed by at least two layers formed by different metals.
The method of fabrication of a plasmon-enhanced terahertz graphene-based photodetector, comprising: (a) patterning, on a surface of a S i C substrate, a single layer of graphene, thus forming an array of graphene micro-ribbons extending substantially in parallel each to the other, (b) forming, in electrical contact with said array of graphene micro-ribbons, an array of bimetallic electrode lines extending at an angle of approximately 45 0 relative to said graphene micro-ribbons, (c) forming source and drain terminals at the outermost bi-metallic electrode lines of said array thereof, (d) forming a gate terminal, (e) applying a layer of electrolyte atop of said array of bi-metallic electrode lines to envelope and being in contact with said array of microribbons and said array of bi-metallic electrode lines, said layer of electrolyte being coupled to the gate terminal, and (f) coupling a source of gate voltage between said source and gate terminals.
The method of Claim 16, wherein in said step (a), said graphene micro-ribbons are formed by electron beam lithography followed by oxygen plasma treatment, and wherein in said step (b), said bi-metallic electrode lines are formed by tilted-angle shadow evaporation technique.
The method of Claim 16, wherein said substrate is made of semi-insulating 6H-S i C material, and said graphene micro-ribbons are patterned in an epitaxial single layer graphene.
The method of Claim 16, wherein said electrolyte is LiC l O 4: PEO having the ratio of 0.12:1.
The method of Claim 16, further comprising: polarized in a direction perpendicular to microsized said graphene micro-ribbons, said bi-metallic transverse plasmon resonance, increasing said gate graphene's charge neutrality point, and obtaining exposing said photodetector to an incident light elements selected from a group consisting of: electrode lines, and combination thereof, to excite voltage to approximately 6.5 V relative to the photo response at said drain terminal.
Layer stacks claimed or described, ordered top of device to substrate.
plasmon-enhanced terahertz graphene-based photodetector
Materials described outside the worked examples.
graphene micro-ribbons
SiC substrate
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 3A, 3D and 3G are schematic representations of optical micrographs of a graphene ribbon array without metal electrodes (
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
gate voltage Vg relative to charge neutrality point for plasmon-enhanced photodetection | ≤ 6.5 V | graphene micro-ribbons |
graphene micro-ribbon width |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,084,102Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic representation of the subject graphene-based photodetector;
FIG. 2E, for formation of the bi-metalic electrodes, the lift off mask 52 is covered on the chip. The mask 52 is a bi-layer photo-resist structure which is …
FIGS. 3A, 3D and 3G are schematic representations of optical micrographs of a graphene ribbon array without metal electrodes (
FIGS. 4B and 4C are representations of the simulated charge density profile in the graphene/metal microstructure at the plasmon resonance frequency, where the …
FIGS. 5A- S C are the diagrams representative of the attenuation at different V g normalized by the spectrum at V g, m as a function of frequency for the …
FIG. 6A is a diagram of the experimental attenuation at V g = V g, m + 6.5 V as a function of frequency (radial axis) and the incident polarization (azimuthal …
FIG. 7A is a diagram representative of the measured magnitude of the photovoltage for the subject tilted graphene ribbon array photodetector (shown in
FIG. 8 is a schematic representation of the FT I R experimental setup; and
FIG. 9 is a schematic representation of the experimental setup for measuring the photoresponse of the subject device to THz excitation.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A plasmon-enhanced terahertz graphene-based photodetector, comprising: a substrate, a microribbon array formed on said substrate, said micro-ribbon array including a plurality of graphene micro-ribbons of a predetermined width extending in a spaced apart relationship one with respect to another, and an array of electrode lines formed in electrical contact with said micro-ribbon array, said electrode lines extending in spaced apart relationship one with respect to another, wherein said micro-ribbons are sandwiched between said array of electrode lines and said substrate and extend in an angled relationship different than 90 degrees to said electrode lines.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, further including an electrolyte layer positioned atop and enveloping said micro-ribbon array and said array of electrode lines.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein said substrate is made from S i C (0001) material.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein the width of each said graphene micro-ribbons ranges from 0.6 m to 1.1 m.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein said graphene micro-ribbons extend substantially in parallel each to the other with a spacing therebetween not exceeding 2 m.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein said angled relationship between said graphene micro-ribbons and said electrode lines is determined by an angle of approximately 45 0 therebetween.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein the length of each of said graphene micro-ribbons does not exceed 7.3 m.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein each of said electrode lines are formed by at least two layers formed by different metals.
The method of fabrication of a plasmon-enhanced terahertz graphene-based photodetector, comprising: (a) patterning, on a surface of a S i C substrate, a single layer of graphene, thus forming an array of graphene micro-ribbons extending substantially in parallel each to the other, (b) forming, in electrical contact with said array of graphene micro-ribbons, an array of bimetallic electrode lines extending at an angle of approximately 45 0 relative to said graphene micro-ribbons, (c) forming source and drain terminals at the outermost bi-metallic electrode lines of said array thereof, (d) forming a gate terminal, (e) applying a layer of electrolyte atop of said array of bi-metallic electrode lines to envelope and being in contact with said array of microribbons and said array of bi-metallic electrode lines, said layer of electrolyte being coupled to the gate terminal, and (f) coupling a source of gate voltage between said source and gate terminals.
The method of Claim 16, wherein in said step (a), said graphene micro-ribbons are formed by electron beam lithography followed by oxygen plasma treatment, and wherein in said step (b), said bi-metallic electrode lines are formed by tilted-angle shadow evaporation technique.
The method of Claim 16, wherein said substrate is made of semi-insulating 6H-S i C material, and said graphene micro-ribbons are patterned in an epitaxial single layer graphene.
The method of Claim 16, wherein said electrolyte is LiC l O 4: PEO having the ratio of 0.12:1.
The method of Claim 16, further comprising: polarized in a direction perpendicular to microsized said graphene micro-ribbons, said bi-metallic transverse plasmon resonance, increasing said gate graphene's charge neutrality point, and obtaining exposing said photodetector to an incident light elements selected from a group consisting of: electrode lines, and combination thereof, to excite voltage to approximately 6.5 V relative to the photo response at said drain terminal.
Layer stacks claimed or described, ordered top of device to substrate.
plasmon-enhanced terahertz graphene-based photodetector
Materials described outside the worked examples.
graphene micro-ribbons
SiC substrate
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 3A, 3D and 3G are schematic representations of optical micrographs of a graphene ribbon array without metal electrodes (
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
gate voltage Vg relative to charge neutrality point for plasmon-enhanced photodetection | ≤ 6.5 V | graphene micro-ribbons |
graphene micro-ribbon width |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,084,102Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic representation of the subject graphene-based photodetector;
FIG. 2E, for formation of the bi-metalic electrodes, the lift off mask 52 is covered on the chip. The mask 52 is a bi-layer photo-resist structure which is …
FIGS. 3A, 3D and 3G are schematic representations of optical micrographs of a graphene ribbon array without metal electrodes (
FIGS. 4B and 4C are representations of the simulated charge density profile in the graphene/metal microstructure at the plasmon resonance frequency, where the …
FIGS. 5A- S C are the diagrams representative of the attenuation at different V g normalized by the spectrum at V g, m as a function of frequency for the …
FIG. 6A is a diagram of the experimental attenuation at V g = V g, m + 6.5 V as a function of frequency (radial axis) and the incident polarization (azimuthal …
FIG. 7A is a diagram representative of the measured magnitude of the photovoltage for the subject tilted graphene ribbon array photodetector (shown in
FIG. 8 is a schematic representation of the FT I R experimental setup; and
FIG. 9 is a schematic representation of the experimental setup for measuring the photoresponse of the subject device to THz excitation.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A plasmon-enhanced terahertz graphene-based photodetector, comprising: a substrate, a microribbon array formed on said substrate, said micro-ribbon array including a plurality of graphene micro-ribbons of a predetermined width extending in a spaced apart relationship one with respect to another, and an array of electrode lines formed in electrical contact with said micro-ribbon array, said electrode lines extending in spaced apart relationship one with respect to another, wherein said micro-ribbons are sandwiched between said array of electrode lines and said substrate and extend in an angled relationship different than 90 degrees to said electrode lines.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, further including an electrolyte layer positioned atop and enveloping said micro-ribbon array and said array of electrode lines.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein said substrate is made from S i C (0001) material.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein the width of each said graphene micro-ribbons ranges from 0.6 m to 1.1 m.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein said graphene micro-ribbons extend substantially in parallel each to the other with a spacing therebetween not exceeding 2 m.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein said angled relationship between said graphene micro-ribbons and said electrode lines is determined by an angle of approximately 45 0 therebetween.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein the length of each of said graphene micro-ribbons does not exceed 7.3 m.
The plasmon-enhanced terahertz graphene-based photodetector of Claim 1, wherein each of said electrode lines are formed by at least two layers formed by different metals.
The method of fabrication of a plasmon-enhanced terahertz graphene-based photodetector, comprising: (a) patterning, on a surface of a S i C substrate, a single layer of graphene, thus forming an array of graphene micro-ribbons extending substantially in parallel each to the other, (b) forming, in electrical contact with said array of graphene micro-ribbons, an array of bimetallic electrode lines extending at an angle of approximately 45 0 relative to said graphene micro-ribbons, (c) forming source and drain terminals at the outermost bi-metallic electrode lines of said array thereof, (d) forming a gate terminal, (e) applying a layer of electrolyte atop of said array of bi-metallic electrode lines to envelope and being in contact with said array of microribbons and said array of bi-metallic electrode lines, said layer of electrolyte being coupled to the gate terminal, and (f) coupling a source of gate voltage between said source and gate terminals.
The method of Claim 16, wherein in said step (a), said graphene micro-ribbons are formed by electron beam lithography followed by oxygen plasma treatment, and wherein in said step (b), said bi-metallic electrode lines are formed by tilted-angle shadow evaporation technique.
The method of Claim 16, wherein said substrate is made of semi-insulating 6H-S i C material, and said graphene micro-ribbons are patterned in an epitaxial single layer graphene.
The method of Claim 16, wherein said electrolyte is LiC l O 4: PEO having the ratio of 0.12:1.
The method of Claim 16, further comprising: polarized in a direction perpendicular to microsized said graphene micro-ribbons, said bi-metallic transverse plasmon resonance, increasing said gate graphene's charge neutrality point, and obtaining exposing said photodetector to an incident light elements selected from a group consisting of: electrode lines, and combination thereof, to excite voltage to approximately 6.5 V relative to the photo response at said drain terminal.
Layer stacks claimed or described, ordered top of device to substrate.
plasmon-enhanced terahertz graphene-based photodetector
Materials described outside the worked examples.
graphene micro-ribbons
SiC substrate
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 3A, 3D and 3G are schematic representations of optical micrographs of a graphene ribbon array without metal electrodes (
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
gate voltage Vg relative to charge neutrality point for plasmon-enhanced photodetection | ≤ 6.5 V | graphene micro-ribbons |
graphene micro-ribbon width |
Related documents with shared materials, methods, properties, or citations.
electrolyte (LiClO4:PEO)
LiClO4:PEO
bimetallic electrode lines
chromium (electrode first layer)
Cr
gold (electrode second layer)
Au
| 0.6–1.1 μm |
graphene micro-ribbons |
graphene micro-ribbon length between electrodes | ≤ 7.3 μm | graphene micro-ribbons |
graphene micro-ribbon spacing | ≤ 2 μm | graphene micro-ribbons |
electrode line width | 1–2 μm | bimetallic electrode lines |
electrode line spacing | 0.6–7.3 μm | bimetallic electrode lines |
chromium electrode layer thickness | 20 nm | Cr |
gold electrode layer thickness | 25 nm | Au |
electrolyte (LiClO4:PEO)
LiClO4:PEO
bimetallic electrode lines
chromium (electrode first layer)
Cr
gold (electrode second layer)
Au
| 0.6–1.1 μm |
graphene micro-ribbons |
graphene micro-ribbon length between electrodes | ≤ 7.3 μm | graphene micro-ribbons |
graphene micro-ribbon spacing | ≤ 2 μm | graphene micro-ribbons |
electrode line width | 1–2 μm | bimetallic electrode lines |
electrode line spacing | 0.6–7.3 μm | bimetallic electrode lines |
chromium electrode layer thickness | 20 nm | Cr |
gold electrode layer thickness | 25 nm | Au |
electrolyte (LiClO4:PEO)
LiClO4:PEO
bimetallic electrode lines
chromium (electrode first layer)
Cr
gold (electrode second layer)
Au
| 0.6–1.1 μm |
graphene micro-ribbons |
graphene micro-ribbon length between electrodes | ≤ 7.3 μm | graphene micro-ribbons |
graphene micro-ribbon spacing | ≤ 2 μm | graphene micro-ribbons |
electrode line width | 1–2 μm | bimetallic electrode lines |
electrode line spacing | 0.6–7.3 μm | bimetallic electrode lines |
chromium electrode layer thickness | 20 nm | Cr |
gold electrode layer thickness | 25 nm | Au |
electrolyte (LiClO4:PEO)
LiClO4:PEO
bimetallic electrode lines
chromium (electrode first layer)
Cr
gold (electrode second layer)
Au
| 0.6–1.1 μm |
graphene micro-ribbons |
graphene micro-ribbon length between electrodes | ≤ 7.3 μm | graphene micro-ribbons |
graphene micro-ribbon spacing | ≤ 2 μm | graphene micro-ribbons |
electrode line width | 1–2 μm | bimetallic electrode lines |
electrode line spacing | 0.6–7.3 μm | bimetallic electrode lines |
chromium electrode layer thickness | 20 nm | Cr |
gold electrode layer thickness | 25 nm | Au |