Patent
US 10,236,365Homoepitaxial Tunnel Barriers with Hydrogenated Graphene-on-graphene for Room Temperature Electronic Device Applications
Adam L. Friedman
US
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Patent
Atlas literature
Patent
US 10,236,365Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates: (a) An optical microscope image of a four-terminal graphene device. The white dotted line outlines the 4-layer graphene channel (scale bar = 15 p m). (b) A cartoon schematic of a device configured in a non-local spin valve geometry. (c) Raman spectra and integrated G peak …
Figure 2 illustrates: (a) Resistance vs. Gate voltage for the device before hydrogenation, after hydrogenation for contacts 1 and 4, nominally only on the conductive channel, and after hydrogenation for contacts 2 and 3, nominally only on the resistive tunnel barrier portion of the device. The …
Figure 3 illustrates: IV curves displaying non-Ohmic behavior for increasing temperature for (a) pins 1 to 2 (b) pins 1 to 3 (c) pins 1 to 4. Inset shows that the IV curve before hydrogenation is Ohmic. The resistance again increases after hydrogenation, indicating that the hydrogen diffuses under …
Figure 4 illustrates: (a) Energy diagrams for polarized spin tunneling. Spins from the NiFe tunnel across the hydrogenated graphene and into available states in the graphene. (b) NLSV at 10 K (lower graph) and 293 K (upper graph). The curve is for sweeping the field from negative to positive, and …
Figure 5 illustrates: (a) 4T Non-local Hanle effect taken at 10 K and with a -10 p A bias. The line shows the data. The other line is the theoretical fit, from which a spin lifetime of ~ 70 ps and spin diffusion length of ~2 p m is extracted. The third line is a witness sample showing no Hanle signal, …
Figure 6 illustrates measured magnitude of the NLSV peak and calculated polarization efficiency as a function of sample bias taken at 10 K.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A homoepitaxial tunnel barrier transport device with hydrogenated graphene- on-graphene, comprising: a substrate; a monolayer graphene film; wherein the monolayer graphene film has encapsulated edges formed by utilizing deep-UV lithography and a MMA/PMMA mask and sputter-depositing SiN wherein the SiN is about 10 nm; and a chemically modified monolayer graphene film wherein the chemically modified monolayer graphene film is a hydrogenated monolayer graphene film. Original
The homoepitaxial tunnel barrier transport device with functionalized graphene-on-graphene of claim 1, wherein there is no electrical connection between the monolayer graphene film and the chemically modified monolayer graphene film. Original
Canceled
A homoepitaxial tunnel barrier with hydrogenated graphene-on-graphene formed by the steps comprising growing graphene by chemical vapor deposition via decomposition of methane in a copper foil enclosure, removing the copper foil by etching, transferring and stacking graphene layers on a substrate, defining graphene mesas utilizing deep- UV lithography and an etch mask with PMMA and oxygen plasma, rinsing in acetone and isopropyl alcohol and removing the etch mask, defining reference contacts and bond pads, depositing Ti/Au using electron beam deposition, encapsulating edges of the graphene layers utilizing deep-UV lithography and a MMA/PMMA mask, sputter-depositing SiN wherein the SiN is about 10 nm, hydrogenating the graphene, and forming the homoepitaxial tunnel barrier. Original
The homoepitaxial tunnel barrier with hydrogenated graphene-on-graphene of claim 4 wherein the step of transferring and stacking graphene layers on a substrate includes stacking 4 graphene layers and wherein after the step of hydrogenating a conductive channel is present in the layers. Original
A homoepitaxial tunnel barrier with hydrogenated graphene-on-graphene formed by the process comprising providing a multilayer stack of graphene having top layers and bottom layers, encapsulating edges of the graphene layers utilizing deep-UV lithography and a MM A/PMMA mask, sputter-depositing SiN wherein the SiN is about 10 nm, hydrogenating the top layers of graphene, and creating a homoepitaxial tunnel barrier. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
8 materials4 process steps
Formation of the homoepitaxial graphene tunnel barrier/transport channel device. Graphene grown by CVD via methane decomposition in Cu foil enclosures, Cu removed by etching, four graphene layers transferred and stacked. Mesa defined by deep-UV lithography and PMMA/oxygen plasma etch. Ti/Au reference contacts deposited by e-beam deposition. Edges encapsulated with MMA/PMMA mask and 10 nm SiN sputter deposition. Graphene hydrogenated by Birch reduction process (liquid NH₃ at -78°C, Li wire). Ni₈₀Fe₂₀ spin injection/detection contacts deposited by e-beam evaporation.
2 materials
Demonstration of tunneling behavior via charge transport measurements. Before hydrogenation: Dirac point at ~90 V indicating strong p-type doping. After hydrogenation of top layers: Dirac point shifts to ~10 V attributed to conduction in bottom graphene layers. Hydrogenation known to create n-type devices, shifting Dirac point to lower gate voltage.
Layer stacks claimed or described, ordered top of device to substrate.
homoepitaxial tunnel barrier transport device (hydrogenated graphene-on-graphene)
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 illustrates: (a) An optical microscope image of a four-terminal graphene device. The white dotted line outlines the 4-layer graphene channel (scale bar = 15 p m). (b) A cartoon schematic of a device configured in a non-local spin valve geometry. (c) Raman spectra and integrated G peak …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Resistance | 45 GΩ | hydrogenated graphene |
Fet Threshold Voltage | 90 V |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,236,365Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates: (a) An optical microscope image of a four-terminal graphene device. The white dotted line outlines the 4-layer graphene channel (scale bar = 15 p m). (b) A cartoon schematic of a device configured in a non-local spin valve geometry. (c) Raman spectra and integrated G peak …
Figure 2 illustrates: (a) Resistance vs. Gate voltage for the device before hydrogenation, after hydrogenation for contacts 1 and 4, nominally only on the conductive channel, and after hydrogenation for contacts 2 and 3, nominally only on the resistive tunnel barrier portion of the device. The …
Figure 3 illustrates: IV curves displaying non-Ohmic behavior for increasing temperature for (a) pins 1 to 2 (b) pins 1 to 3 (c) pins 1 to 4. Inset shows that the IV curve before hydrogenation is Ohmic. The resistance again increases after hydrogenation, indicating that the hydrogen diffuses under …
Figure 4 illustrates: (a) Energy diagrams for polarized spin tunneling. Spins from the NiFe tunnel across the hydrogenated graphene and into available states in the graphene. (b) NLSV at 10 K (lower graph) and 293 K (upper graph). The curve is for sweeping the field from negative to positive, and …
Figure 5 illustrates: (a) 4T Non-local Hanle effect taken at 10 K and with a -10 p A bias. The line shows the data. The other line is the theoretical fit, from which a spin lifetime of ~ 70 ps and spin diffusion length of ~2 p m is extracted. The third line is a witness sample showing no Hanle signal, …
Figure 6 illustrates measured magnitude of the NLSV peak and calculated polarization efficiency as a function of sample bias taken at 10 K.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A homoepitaxial tunnel barrier transport device with hydrogenated graphene- on-graphene, comprising: a substrate; a monolayer graphene film; wherein the monolayer graphene film has encapsulated edges formed by utilizing deep-UV lithography and a MMA/PMMA mask and sputter-depositing SiN wherein the SiN is about 10 nm; and a chemically modified monolayer graphene film wherein the chemically modified monolayer graphene film is a hydrogenated monolayer graphene film. Original
The homoepitaxial tunnel barrier transport device with functionalized graphene-on-graphene of claim 1, wherein there is no electrical connection between the monolayer graphene film and the chemically modified monolayer graphene film. Original
Canceled
A homoepitaxial tunnel barrier with hydrogenated graphene-on-graphene formed by the steps comprising growing graphene by chemical vapor deposition via decomposition of methane in a copper foil enclosure, removing the copper foil by etching, transferring and stacking graphene layers on a substrate, defining graphene mesas utilizing deep- UV lithography and an etch mask with PMMA and oxygen plasma, rinsing in acetone and isopropyl alcohol and removing the etch mask, defining reference contacts and bond pads, depositing Ti/Au using electron beam deposition, encapsulating edges of the graphene layers utilizing deep-UV lithography and a MMA/PMMA mask, sputter-depositing SiN wherein the SiN is about 10 nm, hydrogenating the graphene, and forming the homoepitaxial tunnel barrier. Original
The homoepitaxial tunnel barrier with hydrogenated graphene-on-graphene of claim 4 wherein the step of transferring and stacking graphene layers on a substrate includes stacking 4 graphene layers and wherein after the step of hydrogenating a conductive channel is present in the layers. Original
A homoepitaxial tunnel barrier with hydrogenated graphene-on-graphene formed by the process comprising providing a multilayer stack of graphene having top layers and bottom layers, encapsulating edges of the graphene layers utilizing deep-UV lithography and a MM A/PMMA mask, sputter-depositing SiN wherein the SiN is about 10 nm, hydrogenating the top layers of graphene, and creating a homoepitaxial tunnel barrier. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
8 materials4 process steps
Formation of the homoepitaxial graphene tunnel barrier/transport channel device. Graphene grown by CVD via methane decomposition in Cu foil enclosures, Cu removed by etching, four graphene layers transferred and stacked. Mesa defined by deep-UV lithography and PMMA/oxygen plasma etch. Ti/Au reference contacts deposited by e-beam deposition. Edges encapsulated with MMA/PMMA mask and 10 nm SiN sputter deposition. Graphene hydrogenated by Birch reduction process (liquid NH₃ at -78°C, Li wire). Ni₈₀Fe₂₀ spin injection/detection contacts deposited by e-beam evaporation.
2 materials
Demonstration of tunneling behavior via charge transport measurements. Before hydrogenation: Dirac point at ~90 V indicating strong p-type doping. After hydrogenation of top layers: Dirac point shifts to ~10 V attributed to conduction in bottom graphene layers. Hydrogenation known to create n-type devices, shifting Dirac point to lower gate voltage.
Layer stacks claimed or described, ordered top of device to substrate.
homoepitaxial tunnel barrier transport device (hydrogenated graphene-on-graphene)
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 illustrates: (a) An optical microscope image of a four-terminal graphene device. The white dotted line outlines the 4-layer graphene channel (scale bar = 15 p m). (b) A cartoon schematic of a device configured in a non-local spin valve geometry. (c) Raman spectra and integrated G peak …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Resistance | 45 GΩ | hydrogenated graphene |
Fet Threshold Voltage | 90 V |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,236,365Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates: (a) An optical microscope image of a four-terminal graphene device. The white dotted line outlines the 4-layer graphene channel (scale bar = 15 p m). (b) A cartoon schematic of a device configured in a non-local spin valve geometry. (c) Raman spectra and integrated G peak …
Figure 2 illustrates: (a) Resistance vs. Gate voltage for the device before hydrogenation, after hydrogenation for contacts 1 and 4, nominally only on the conductive channel, and after hydrogenation for contacts 2 and 3, nominally only on the resistive tunnel barrier portion of the device. The …
Figure 3 illustrates: IV curves displaying non-Ohmic behavior for increasing temperature for (a) pins 1 to 2 (b) pins 1 to 3 (c) pins 1 to 4. Inset shows that the IV curve before hydrogenation is Ohmic. The resistance again increases after hydrogenation, indicating that the hydrogen diffuses under …
Figure 4 illustrates: (a) Energy diagrams for polarized spin tunneling. Spins from the NiFe tunnel across the hydrogenated graphene and into available states in the graphene. (b) NLSV at 10 K (lower graph) and 293 K (upper graph). The curve is for sweeping the field from negative to positive, and …
Figure 5 illustrates: (a) 4T Non-local Hanle effect taken at 10 K and with a -10 p A bias. The line shows the data. The other line is the theoretical fit, from which a spin lifetime of ~ 70 ps and spin diffusion length of ~2 p m is extracted. The third line is a witness sample showing no Hanle signal, …
Figure 6 illustrates measured magnitude of the NLSV peak and calculated polarization efficiency as a function of sample bias taken at 10 K.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A homoepitaxial tunnel barrier transport device with hydrogenated graphene- on-graphene, comprising: a substrate; a monolayer graphene film; wherein the monolayer graphene film has encapsulated edges formed by utilizing deep-UV lithography and a MMA/PMMA mask and sputter-depositing SiN wherein the SiN is about 10 nm; and a chemically modified monolayer graphene film wherein the chemically modified monolayer graphene film is a hydrogenated monolayer graphene film. Original
The homoepitaxial tunnel barrier transport device with functionalized graphene-on-graphene of claim 1, wherein there is no electrical connection between the monolayer graphene film and the chemically modified monolayer graphene film. Original
Canceled
A homoepitaxial tunnel barrier with hydrogenated graphene-on-graphene formed by the steps comprising growing graphene by chemical vapor deposition via decomposition of methane in a copper foil enclosure, removing the copper foil by etching, transferring and stacking graphene layers on a substrate, defining graphene mesas utilizing deep- UV lithography and an etch mask with PMMA and oxygen plasma, rinsing in acetone and isopropyl alcohol and removing the etch mask, defining reference contacts and bond pads, depositing Ti/Au using electron beam deposition, encapsulating edges of the graphene layers utilizing deep-UV lithography and a MMA/PMMA mask, sputter-depositing SiN wherein the SiN is about 10 nm, hydrogenating the graphene, and forming the homoepitaxial tunnel barrier. Original
The homoepitaxial tunnel barrier with hydrogenated graphene-on-graphene of claim 4 wherein the step of transferring and stacking graphene layers on a substrate includes stacking 4 graphene layers and wherein after the step of hydrogenating a conductive channel is present in the layers. Original
A homoepitaxial tunnel barrier with hydrogenated graphene-on-graphene formed by the process comprising providing a multilayer stack of graphene having top layers and bottom layers, encapsulating edges of the graphene layers utilizing deep-UV lithography and a MM A/PMMA mask, sputter-depositing SiN wherein the SiN is about 10 nm, hydrogenating the top layers of graphene, and creating a homoepitaxial tunnel barrier. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
8 materials4 process steps
Formation of the homoepitaxial graphene tunnel barrier/transport channel device. Graphene grown by CVD via methane decomposition in Cu foil enclosures, Cu removed by etching, four graphene layers transferred and stacked. Mesa defined by deep-UV lithography and PMMA/oxygen plasma etch. Ti/Au reference contacts deposited by e-beam deposition. Edges encapsulated with MMA/PMMA mask and 10 nm SiN sputter deposition. Graphene hydrogenated by Birch reduction process (liquid NH₃ at -78°C, Li wire). Ni₈₀Fe₂₀ spin injection/detection contacts deposited by e-beam evaporation.
2 materials
Demonstration of tunneling behavior via charge transport measurements. Before hydrogenation: Dirac point at ~90 V indicating strong p-type doping. After hydrogenation of top layers: Dirac point shifts to ~10 V attributed to conduction in bottom graphene layers. Hydrogenation known to create n-type devices, shifting Dirac point to lower gate voltage.
Layer stacks claimed or described, ordered top of device to substrate.
homoepitaxial tunnel barrier transport device (hydrogenated graphene-on-graphene)
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 illustrates: (a) An optical microscope image of a four-terminal graphene device. The white dotted line outlines the 4-layer graphene channel (scale bar = 15 p m). (b) A cartoon schematic of a device configured in a non-local spin valve geometry. (c) Raman spectra and integrated G peak …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Resistance | 45 GΩ | hydrogenated graphene |
Fet Threshold Voltage | 90 V |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,236,365Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates: (a) An optical microscope image of a four-terminal graphene device. The white dotted line outlines the 4-layer graphene channel (scale bar = 15 p m). (b) A cartoon schematic of a device configured in a non-local spin valve geometry. (c) Raman spectra and integrated G peak …
Figure 2 illustrates: (a) Resistance vs. Gate voltage for the device before hydrogenation, after hydrogenation for contacts 1 and 4, nominally only on the conductive channel, and after hydrogenation for contacts 2 and 3, nominally only on the resistive tunnel barrier portion of the device. The …
Figure 3 illustrates: IV curves displaying non-Ohmic behavior for increasing temperature for (a) pins 1 to 2 (b) pins 1 to 3 (c) pins 1 to 4. Inset shows that the IV curve before hydrogenation is Ohmic. The resistance again increases after hydrogenation, indicating that the hydrogen diffuses under …
Figure 4 illustrates: (a) Energy diagrams for polarized spin tunneling. Spins from the NiFe tunnel across the hydrogenated graphene and into available states in the graphene. (b) NLSV at 10 K (lower graph) and 293 K (upper graph). The curve is for sweeping the field from negative to positive, and …
Figure 5 illustrates: (a) 4T Non-local Hanle effect taken at 10 K and with a -10 p A bias. The line shows the data. The other line is the theoretical fit, from which a spin lifetime of ~ 70 ps and spin diffusion length of ~2 p m is extracted. The third line is a witness sample showing no Hanle signal, …
Figure 6 illustrates measured magnitude of the NLSV peak and calculated polarization efficiency as a function of sample bias taken at 10 K.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A homoepitaxial tunnel barrier transport device with hydrogenated graphene- on-graphene, comprising: a substrate; a monolayer graphene film; wherein the monolayer graphene film has encapsulated edges formed by utilizing deep-UV lithography and a MMA/PMMA mask and sputter-depositing SiN wherein the SiN is about 10 nm; and a chemically modified monolayer graphene film wherein the chemically modified monolayer graphene film is a hydrogenated monolayer graphene film. Original
The homoepitaxial tunnel barrier transport device with functionalized graphene-on-graphene of claim 1, wherein there is no electrical connection between the monolayer graphene film and the chemically modified monolayer graphene film. Original
Canceled
A homoepitaxial tunnel barrier with hydrogenated graphene-on-graphene formed by the steps comprising growing graphene by chemical vapor deposition via decomposition of methane in a copper foil enclosure, removing the copper foil by etching, transferring and stacking graphene layers on a substrate, defining graphene mesas utilizing deep- UV lithography and an etch mask with PMMA and oxygen plasma, rinsing in acetone and isopropyl alcohol and removing the etch mask, defining reference contacts and bond pads, depositing Ti/Au using electron beam deposition, encapsulating edges of the graphene layers utilizing deep-UV lithography and a MMA/PMMA mask, sputter-depositing SiN wherein the SiN is about 10 nm, hydrogenating the graphene, and forming the homoepitaxial tunnel barrier. Original
The homoepitaxial tunnel barrier with hydrogenated graphene-on-graphene of claim 4 wherein the step of transferring and stacking graphene layers on a substrate includes stacking 4 graphene layers and wherein after the step of hydrogenating a conductive channel is present in the layers. Original
A homoepitaxial tunnel barrier with hydrogenated graphene-on-graphene formed by the process comprising providing a multilayer stack of graphene having top layers and bottom layers, encapsulating edges of the graphene layers utilizing deep-UV lithography and a MM A/PMMA mask, sputter-depositing SiN wherein the SiN is about 10 nm, hydrogenating the top layers of graphene, and creating a homoepitaxial tunnel barrier. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
8 materials4 process steps
Formation of the homoepitaxial graphene tunnel barrier/transport channel device. Graphene grown by CVD via methane decomposition in Cu foil enclosures, Cu removed by etching, four graphene layers transferred and stacked. Mesa defined by deep-UV lithography and PMMA/oxygen plasma etch. Ti/Au reference contacts deposited by e-beam deposition. Edges encapsulated with MMA/PMMA mask and 10 nm SiN sputter deposition. Graphene hydrogenated by Birch reduction process (liquid NH₃ at -78°C, Li wire). Ni₈₀Fe₂₀ spin injection/detection contacts deposited by e-beam evaporation.
2 materials
Demonstration of tunneling behavior via charge transport measurements. Before hydrogenation: Dirac point at ~90 V indicating strong p-type doping. After hydrogenation of top layers: Dirac point shifts to ~10 V attributed to conduction in bottom graphene layers. Hydrogenation known to create n-type devices, shifting Dirac point to lower gate voltage.
Layer stacks claimed or described, ordered top of device to substrate.
homoepitaxial tunnel barrier transport device (hydrogenated graphene-on-graphene)
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 illustrates: (a) An optical microscope image of a four-terminal graphene device. The white dotted line outlines the 4-layer graphene channel (scale bar = 15 p m). (b) A cartoon schematic of a device configured in a non-local spin valve geometry. (c) Raman spectra and integrated G peak …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Resistance | 45 GΩ | hydrogenated graphene |
Fet Threshold Voltage | 90 V |
Related documents with shared materials, methods, properties, or citations.
Figure 2 illustrates: (a) Resistance vs. Gate voltage for the device before hydrogenation, after hydrogenation for contacts 1 and 4, nominally only on the conductive channel, and after hydrogenation for contacts 2 and 3, nominally only on the resistive tunnel barrier portion of the device. The …
Figure 3 illustrates: IV curves displaying non-Ohmic behavior for increasing temperature for (a) pins 1 to 2 (b) pins 1 to 3 (c) pins 1 to 4. Inset shows that the IV curve before hydrogenation is Ohmic. The resistance again increases after hydrogenation, indicating that the hydrogen diffuses under …
Figure 3 illustrates: IV curves displaying non-Ohmic behavior for increasing temperature for (a) pins 1 to 2 (b) pins 1 to 3 (c) pins 1 to 4. Inset shows that the IV curve before hydrogenation is Ohmic. The resistance again increases after hydrogenation, indicating that the hydrogen diffuses under …
C |
Fet Threshold Voltage | 10 V | C |
Temperature | 5–300 K | — |
Temperature | 10–293 K | — |
Figure 2 illustrates: (a) Resistance vs. Gate voltage for the device before hydrogenation, after hydrogenation for contacts 1 and 4, nominally only on the conductive channel, and after hydrogenation for contacts 2 and 3, nominally only on the resistive tunnel barrier portion of the device. The …
Figure 3 illustrates: IV curves displaying non-Ohmic behavior for increasing temperature for (a) pins 1 to 2 (b) pins 1 to 3 (c) pins 1 to 4. Inset shows that the IV curve before hydrogenation is Ohmic. The resistance again increases after hydrogenation, indicating that the hydrogen diffuses under …
Figure 3 illustrates: IV curves displaying non-Ohmic behavior for increasing temperature for (a) pins 1 to 2 (b) pins 1 to 3 (c) pins 1 to 4. Inset shows that the IV curve before hydrogenation is Ohmic. The resistance again increases after hydrogenation, indicating that the hydrogen diffuses under …
C |
Fet Threshold Voltage | 10 V | C |
Temperature | 5–300 K | — |
Temperature | 10–293 K | — |
Figure 2 illustrates: (a) Resistance vs. Gate voltage for the device before hydrogenation, after hydrogenation for contacts 1 and 4, nominally only on the conductive channel, and after hydrogenation for contacts 2 and 3, nominally only on the resistive tunnel barrier portion of the device. The …
Figure 3 illustrates: IV curves displaying non-Ohmic behavior for increasing temperature for (a) pins 1 to 2 (b) pins 1 to 3 (c) pins 1 to 4. Inset shows that the IV curve before hydrogenation is Ohmic. The resistance again increases after hydrogenation, indicating that the hydrogen diffuses under …
Figure 3 illustrates: IV curves displaying non-Ohmic behavior for increasing temperature for (a) pins 1 to 2 (b) pins 1 to 3 (c) pins 1 to 4. Inset shows that the IV curve before hydrogenation is Ohmic. The resistance again increases after hydrogenation, indicating that the hydrogen diffuses under …
C |
Fet Threshold Voltage | 10 V | C |
Temperature | 5–300 K | — |
Temperature | 10–293 K | — |
Figure 2 illustrates: (a) Resistance vs. Gate voltage for the device before hydrogenation, after hydrogenation for contacts 1 and 4, nominally only on the conductive channel, and after hydrogenation for contacts 2 and 3, nominally only on the resistive tunnel barrier portion of the device. The …
Figure 3 illustrates: IV curves displaying non-Ohmic behavior for increasing temperature for (a) pins 1 to 2 (b) pins 1 to 3 (c) pins 1 to 4. Inset shows that the IV curve before hydrogenation is Ohmic. The resistance again increases after hydrogenation, indicating that the hydrogen diffuses under …
Figure 3 illustrates: IV curves displaying non-Ohmic behavior for increasing temperature for (a) pins 1 to 2 (b) pins 1 to 3 (c) pins 1 to 4. Inset shows that the IV curve before hydrogenation is Ohmic. The resistance again increases after hydrogenation, indicating that the hydrogen diffuses under …
C |
Fet Threshold Voltage | 10 V | C |
Temperature | 5–300 K | — |
Temperature | 10–293 K | — |