Patent
US 9,362,364TRANSFER-FREE BATCH FABRICATION OF SINGLE LAYER GRAPHENE DEVICES
PARK, Jiwoong
Cornell University·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,362,364Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an embodiment of a method of manufacturing one or more graphene devices. [0014]
FIGS. 2A-2G, respectively, and schematically illustrate the fabrication steps from a perspective view for the embodied method of manufacturing a graphene …
FIGS. 3A-3G correspond to
FIG. 4 B shows representative Raman spectra for a manufactured graphene device after growth of a graphene layer using an embodiment of the manufacturing method …
FIG. 5A schematically illustrates an embodiment of a single layer graphene device having patterned electrodes contacting the graphene from below and being …
FIG. 6B is a graph of median resistance (R m e dian) f or a va r iety of SLG devices produced using an embodiment of the manufacturing method discussed with …
FIG. 7 schematically illustrates a cross-section of an embodiment of a transistor comprising a single layer graphene channel grown partially on and coupling a …
FIG. 8 schematically illustrates a cross-section of another embodiment of a transistor comprising a single layer graphene channel grown partially on and …
FIG. 9B shows saturation current observed for negative drain- source bias (V D S) f o r an embodiment of the transistor illustrated in
FIGS. 10 A and lO B schematically illustrate cross-sections for different embodiments of an integrated circuit. WO 2011/046655 PCT/US₂ 010/042702 6 [0031]
FIG. 11 schematically illustrates that graphene is an effective barri er against oxidation and diffusion. [0032]
FIG. 12A shows a Brightfield image of evaporated copper film with graphene, where a portion of the copper film has been exposed to hydrogen peroxide. [0033]
FIG. 13 illustrates one embodiment of a fabrication method. [0035] It will be appreciated that for purposes of clarity and where deemed appropriate, reference …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing one or more graphene devices, comprising forming a thin film growth substrate directly on a device substrate; forming a graphene layer on the thin film growth substrate; processing the graphene layer and the thin film growth substrate to form a patterned graphene layer upon a patterned thin film growth substrate; and undercutting the patterned thin film growth substrate with respect to the patterned graphene layer formed upon the patterned thin film growth substrate to provide an undercut patterned thin film growth substrate having the patterned graphene layer formed upon the undercut patterned thin film growth substrate.
The method of claim 1, wherein the device substrate comprises silicon.
The method of claim 1, wherein the device substrate comprises a semiconductor.
The method of claim 1, wherein the device substrate comprises a material selected from the group consisting of glass, f u sed silica, quartz, sapphire, and a metal.
The method of claim 1, wherein the thin film growth substrate comprises copper.
The method of claim 1, wherein the thin film growth substrate comprises an element selected from the group consisting of nickel, cobalt, ruthenium, iridium; and a transition metal.
The method of claim 1, wherein the thin film growth substrate comprises a plurality of thin film growth substrate areas which are not continuous with each other.
The method of claim 1, wherein the thin film growth substrate has a prepatte rn ed structure.
The method of claim 1, wherein forming the thin film growth substrate directly on the device substrate comprises evaporating the thin film growth substrate directly on the device substrate.
The method of claim 1, wherein forming the thin film growth substrate directly on the device substrate comprises sputtering the thin film growth substrate directly on the device substrate.
The method of claim 1, wherein forming the thin film growth substrate directly on the device substrate comprises electroplating the thin film growth substrate directly on the device substrate.
The method of claim 1, wherein the thin film growth substrate has a thickness of at least approximately 100 nanometers.
The method of claim 1, further comprising removing at least a first portion of a metallic oxide from the thin film growth substrate before forming graphene on the thin film growth substrate.
The method of claim 1, wherein forming graphene on the thin film growth substrate comprises forming graphene on the thin film growth substrate in a chemical vapor deposition (CVD) process.
The method of claim 1, wherein forming graphene on the thin film growth substrate comprises forming a substantially single layer of graphene on the thin film growth substrate.
The method of claim 1, further comprising treating the patterned graphene layer formed upon the undercut patterned thin film growth substrate to provide a treated patterned graphene layer that passivates sidewalls of the undercut patterned thin film growth substrate.
The method of claim 1 wherein the patterned thin film growth substrate has smaller areal dimensions in comparison with the patterned graphene layer.
(Previously Presented as New) The method of claim 1 wherein the method uses a single photolithographic process step. 9
canceled
canceled
A method of manufacturing one or more graphene devices, comprising: forming a thin film growth substrate directly on a device substrate; forming a graphene layer on the thin film growth substrate; 4 processing the graphene layer and the thin film growth substrate to form a patterned graphene layer upon a patterned thin film growth substrate; coating at least a portion of the graphene with a photoresist layer; patterning the photoresist layer to define the one or more graphene devices under a remaining photoresist pattern; removing graphene not protected by the remaining photoresist pattern; removing the thin film growth substrate not protected by the remaining photoresist pattern; and removing at least part of the remaining photoresist pattern.
The method of claim 24, wherein at least one of the defined one or more graphene devices comprises a pair of pads connected by a graphene channel.
The method of claim 24, wherein patterning the photoresist layer to define one or more graphene devices under the remaining photoresist pattern comprises removing unwanted photoresist residue from the photoresist layer.
The method of claim 24, wherein removing said thin film growth substrate not protected by the remaining photoresist pattern comprises exposing the thin film growth substrate to an etch solution.
The method of claim 24, wherein said removing at least part of the remaining photoresist pattern occurs after the thin film growth substrate is removed.
33-51. (Cancel) canceled
An apparatus, comprising: a device substrate; a patterned thin film growth substrate formed directly on at least a portion of the device substrate and comprising at least two patterned thin film growth substrate pads which include sidewalls; and a patterned graphene layer formed directly on at least a portion of the patterned thin film growth substrate s including the at least two patterned thin film growth substrate pads, the patterned thin film growth substrate being undercut in comparison with the patterned graphene layer which extends beyond the sidewalls of the at least two patterned thin film growth substrate pads and bridges between the at least two patterned thin film growth substrate pads and which also passivates the sidewalls of the at least two patterned thin film growth substrate pads.
The apparatus of claim 52, wherein the device substrate comprises silicon.
The apparatus of claim 52, wherein the device substrate comprises a semiconductor and an insulator. 6
The apparatus of claim 52, wherein the device substrate comprises a material selected from the group consisting of glass, fused silica, quartz, sapphire, and a metal.
The apparatus of claim 52, wherein the thin film growth substrate comprises copper.
The apparatus of claim 52, wherein the thin film growth substrate comprises an element selected from the group consisting of nickel, cobalt, ruthenium, iridium, and a transition metal.
The apparatus of claim 52, wherein the thin film growth substrate comprises an evaporated metallic film.
The apparatus of claim 52, wherein the thin film growth substrate has a thickness of at least approximately 100 nanometers.
The apparatus of claim 52, wherein the thin film growth substrate comprises a plurality of thin film growth substrate areas which are not continuous with each other.
The apparatus of claim 52, wherein the thin film growth substrate has a prepatterned structure.
The apparatus of claim 52 wherein the patterned thin film growth layer has smaller areal dimensions in comparison with the patterned graphene layer. 7
64-89. Cancel canceled
A method for fabricating a graphene device comprising: forming over a device substrate a thin film growth substrate; forming upon the thin film growth substrate a graphene layer; patterning sequentially the graphene layer and the thin film growth substrate to form a patterned graphene layer formed coextensive upon a patterned thin film growth substrate; undercutting the patterned thin film growth substrate with respect to the patterned graphene layer formed upon the patterned thin film growth substrate to provide an undercut patterned thin film growth substrate having the patterned graphene layer formed upon the undercut patterned thin film growth substrate; and treating the patterned graphene layer formed upon the undercut patterned thin film growth substrate to provide a treated patterned graphene layer that passivates sidewalls of the undercut patterned thin film growth substrate, wherein the undercutting provides a pair of patterned thin film growth substrate pads having formed thereupon the patterned graphene layer, a separation distance of the pair of patterned thin film growth substrate pads defining a graphene channel within the patterned graphene layer.
- 94. (Cancel) canceled
A graphene device comprising: a device substrate; a patterned thin film growth substrate comprising two separated pads located upon the device substrate; and a patterned graphene layer located upon z bridging to and undercut by the two separated pads a patterned thin film growth substrate formed directly on at least a portion of the device substrate and comprising at least two patterned thin film growth substrate pads which include sidewalls; and a patterned graphene layer formed directly on at least a portion of the patterned thin film growth substrate, including the at least two patterned thin film growth substrate pads, the patterned thin film growth substrate being undercut in comparison with the patterned graphene la y er which extends beyond the sidewalls of the at least two patterned thin film growth 8 substrate pads and bridges between the at least two patterned thin film growth substrate pads and which also passivates the sidewalls of the at least two patterned thin film growth substrate pads, where a separation distance of the pair of patterned thin film growth substrate pads defines a graphene channel within the graphene device.
Layer stacks claimed or described, ordered top of device to substrate.
graphene device (method product)
graphene apparatus with undercut patterned thin film substrate
Materials described outside the worked examples.
graphene
C
thin film growth substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 B shows representative Raman spectra for a manufactured graphene device after growth of a graphene layer using an embodiment of the manufacturing method …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 10–20 minutes | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,362,364Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an embodiment of a method of manufacturing one or more graphene devices. [0014]
FIGS. 2A-2G, respectively, and schematically illustrate the fabrication steps from a perspective view for the embodied method of manufacturing a graphene …
FIGS. 3A-3G correspond to
FIG. 4 B shows representative Raman spectra for a manufactured graphene device after growth of a graphene layer using an embodiment of the manufacturing method …
FIG. 5A schematically illustrates an embodiment of a single layer graphene device having patterned electrodes contacting the graphene from below and being …
FIG. 6B is a graph of median resistance (R m e dian) f or a va r iety of SLG devices produced using an embodiment of the manufacturing method discussed with …
FIG. 7 schematically illustrates a cross-section of an embodiment of a transistor comprising a single layer graphene channel grown partially on and coupling a …
FIG. 8 schematically illustrates a cross-section of another embodiment of a transistor comprising a single layer graphene channel grown partially on and …
FIG. 9B shows saturation current observed for negative drain- source bias (V D S) f o r an embodiment of the transistor illustrated in
FIGS. 10 A and lO B schematically illustrate cross-sections for different embodiments of an integrated circuit. WO 2011/046655 PCT/US₂ 010/042702 6 [0031]
FIG. 11 schematically illustrates that graphene is an effective barri er against oxidation and diffusion. [0032]
FIG. 12A shows a Brightfield image of evaporated copper film with graphene, where a portion of the copper film has been exposed to hydrogen peroxide. [0033]
FIG. 13 illustrates one embodiment of a fabrication method. [0035] It will be appreciated that for purposes of clarity and where deemed appropriate, reference …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing one or more graphene devices, comprising forming a thin film growth substrate directly on a device substrate; forming a graphene layer on the thin film growth substrate; processing the graphene layer and the thin film growth substrate to form a patterned graphene layer upon a patterned thin film growth substrate; and undercutting the patterned thin film growth substrate with respect to the patterned graphene layer formed upon the patterned thin film growth substrate to provide an undercut patterned thin film growth substrate having the patterned graphene layer formed upon the undercut patterned thin film growth substrate.
The method of claim 1, wherein the device substrate comprises silicon.
The method of claim 1, wherein the device substrate comprises a semiconductor.
The method of claim 1, wherein the device substrate comprises a material selected from the group consisting of glass, f u sed silica, quartz, sapphire, and a metal.
The method of claim 1, wherein the thin film growth substrate comprises copper.
The method of claim 1, wherein the thin film growth substrate comprises an element selected from the group consisting of nickel, cobalt, ruthenium, iridium; and a transition metal.
The method of claim 1, wherein the thin film growth substrate comprises a plurality of thin film growth substrate areas which are not continuous with each other.
The method of claim 1, wherein the thin film growth substrate has a prepatte rn ed structure.
The method of claim 1, wherein forming the thin film growth substrate directly on the device substrate comprises evaporating the thin film growth substrate directly on the device substrate.
The method of claim 1, wherein forming the thin film growth substrate directly on the device substrate comprises sputtering the thin film growth substrate directly on the device substrate.
The method of claim 1, wherein forming the thin film growth substrate directly on the device substrate comprises electroplating the thin film growth substrate directly on the device substrate.
The method of claim 1, wherein the thin film growth substrate has a thickness of at least approximately 100 nanometers.
The method of claim 1, further comprising removing at least a first portion of a metallic oxide from the thin film growth substrate before forming graphene on the thin film growth substrate.
The method of claim 1, wherein forming graphene on the thin film growth substrate comprises forming graphene on the thin film growth substrate in a chemical vapor deposition (CVD) process.
The method of claim 1, wherein forming graphene on the thin film growth substrate comprises forming a substantially single layer of graphene on the thin film growth substrate.
The method of claim 1, further comprising treating the patterned graphene layer formed upon the undercut patterned thin film growth substrate to provide a treated patterned graphene layer that passivates sidewalls of the undercut patterned thin film growth substrate.
The method of claim 1 wherein the patterned thin film growth substrate has smaller areal dimensions in comparison with the patterned graphene layer.
(Previously Presented as New) The method of claim 1 wherein the method uses a single photolithographic process step. 9
canceled
canceled
A method of manufacturing one or more graphene devices, comprising: forming a thin film growth substrate directly on a device substrate; forming a graphene layer on the thin film growth substrate; 4 processing the graphene layer and the thin film growth substrate to form a patterned graphene layer upon a patterned thin film growth substrate; coating at least a portion of the graphene with a photoresist layer; patterning the photoresist layer to define the one or more graphene devices under a remaining photoresist pattern; removing graphene not protected by the remaining photoresist pattern; removing the thin film growth substrate not protected by the remaining photoresist pattern; and removing at least part of the remaining photoresist pattern.
The method of claim 24, wherein at least one of the defined one or more graphene devices comprises a pair of pads connected by a graphene channel.
The method of claim 24, wherein patterning the photoresist layer to define one or more graphene devices under the remaining photoresist pattern comprises removing unwanted photoresist residue from the photoresist layer.
The method of claim 24, wherein removing said thin film growth substrate not protected by the remaining photoresist pattern comprises exposing the thin film growth substrate to an etch solution.
The method of claim 24, wherein said removing at least part of the remaining photoresist pattern occurs after the thin film growth substrate is removed.
33-51. (Cancel) canceled
An apparatus, comprising: a device substrate; a patterned thin film growth substrate formed directly on at least a portion of the device substrate and comprising at least two patterned thin film growth substrate pads which include sidewalls; and a patterned graphene layer formed directly on at least a portion of the patterned thin film growth substrate s including the at least two patterned thin film growth substrate pads, the patterned thin film growth substrate being undercut in comparison with the patterned graphene layer which extends beyond the sidewalls of the at least two patterned thin film growth substrate pads and bridges between the at least two patterned thin film growth substrate pads and which also passivates the sidewalls of the at least two patterned thin film growth substrate pads.
The apparatus of claim 52, wherein the device substrate comprises silicon.
The apparatus of claim 52, wherein the device substrate comprises a semiconductor and an insulator. 6
The apparatus of claim 52, wherein the device substrate comprises a material selected from the group consisting of glass, fused silica, quartz, sapphire, and a metal.
The apparatus of claim 52, wherein the thin film growth substrate comprises copper.
The apparatus of claim 52, wherein the thin film growth substrate comprises an element selected from the group consisting of nickel, cobalt, ruthenium, iridium, and a transition metal.
The apparatus of claim 52, wherein the thin film growth substrate comprises an evaporated metallic film.
The apparatus of claim 52, wherein the thin film growth substrate has a thickness of at least approximately 100 nanometers.
The apparatus of claim 52, wherein the thin film growth substrate comprises a plurality of thin film growth substrate areas which are not continuous with each other.
The apparatus of claim 52, wherein the thin film growth substrate has a prepatterned structure.
The apparatus of claim 52 wherein the patterned thin film growth layer has smaller areal dimensions in comparison with the patterned graphene layer. 7
64-89. Cancel canceled
A method for fabricating a graphene device comprising: forming over a device substrate a thin film growth substrate; forming upon the thin film growth substrate a graphene layer; patterning sequentially the graphene layer and the thin film growth substrate to form a patterned graphene layer formed coextensive upon a patterned thin film growth substrate; undercutting the patterned thin film growth substrate with respect to the patterned graphene layer formed upon the patterned thin film growth substrate to provide an undercut patterned thin film growth substrate having the patterned graphene layer formed upon the undercut patterned thin film growth substrate; and treating the patterned graphene layer formed upon the undercut patterned thin film growth substrate to provide a treated patterned graphene layer that passivates sidewalls of the undercut patterned thin film growth substrate, wherein the undercutting provides a pair of patterned thin film growth substrate pads having formed thereupon the patterned graphene layer, a separation distance of the pair of patterned thin film growth substrate pads defining a graphene channel within the patterned graphene layer.
- 94. (Cancel) canceled
A graphene device comprising: a device substrate; a patterned thin film growth substrate comprising two separated pads located upon the device substrate; and a patterned graphene layer located upon z bridging to and undercut by the two separated pads a patterned thin film growth substrate formed directly on at least a portion of the device substrate and comprising at least two patterned thin film growth substrate pads which include sidewalls; and a patterned graphene layer formed directly on at least a portion of the patterned thin film growth substrate, including the at least two patterned thin film growth substrate pads, the patterned thin film growth substrate being undercut in comparison with the patterned graphene la y er which extends beyond the sidewalls of the at least two patterned thin film growth 8 substrate pads and bridges between the at least two patterned thin film growth substrate pads and which also passivates the sidewalls of the at least two patterned thin film growth substrate pads, where a separation distance of the pair of patterned thin film growth substrate pads defines a graphene channel within the graphene device.
Layer stacks claimed or described, ordered top of device to substrate.
graphene device (method product)
graphene apparatus with undercut patterned thin film substrate
Materials described outside the worked examples.
graphene
C
thin film growth substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 B shows representative Raman spectra for a manufactured graphene device after growth of a graphene layer using an embodiment of the manufacturing method …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 10–20 minutes | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,362,364Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an embodiment of a method of manufacturing one or more graphene devices. [0014]
FIGS. 2A-2G, respectively, and schematically illustrate the fabrication steps from a perspective view for the embodied method of manufacturing a graphene …
FIGS. 3A-3G correspond to
FIG. 4 B shows representative Raman spectra for a manufactured graphene device after growth of a graphene layer using an embodiment of the manufacturing method …
FIG. 5A schematically illustrates an embodiment of a single layer graphene device having patterned electrodes contacting the graphene from below and being …
FIG. 6B is a graph of median resistance (R m e dian) f or a va r iety of SLG devices produced using an embodiment of the manufacturing method discussed with …
FIG. 7 schematically illustrates a cross-section of an embodiment of a transistor comprising a single layer graphene channel grown partially on and coupling a …
FIG. 8 schematically illustrates a cross-section of another embodiment of a transistor comprising a single layer graphene channel grown partially on and …
FIG. 9B shows saturation current observed for negative drain- source bias (V D S) f o r an embodiment of the transistor illustrated in
FIGS. 10 A and lO B schematically illustrate cross-sections for different embodiments of an integrated circuit. WO 2011/046655 PCT/US₂ 010/042702 6 [0031]
FIG. 11 schematically illustrates that graphene is an effective barri er against oxidation and diffusion. [0032]
FIG. 12A shows a Brightfield image of evaporated copper film with graphene, where a portion of the copper film has been exposed to hydrogen peroxide. [0033]
FIG. 13 illustrates one embodiment of a fabrication method. [0035] It will be appreciated that for purposes of clarity and where deemed appropriate, reference …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing one or more graphene devices, comprising forming a thin film growth substrate directly on a device substrate; forming a graphene layer on the thin film growth substrate; processing the graphene layer and the thin film growth substrate to form a patterned graphene layer upon a patterned thin film growth substrate; and undercutting the patterned thin film growth substrate with respect to the patterned graphene layer formed upon the patterned thin film growth substrate to provide an undercut patterned thin film growth substrate having the patterned graphene layer formed upon the undercut patterned thin film growth substrate.
The method of claim 1, wherein the device substrate comprises silicon.
The method of claim 1, wherein the device substrate comprises a semiconductor.
The method of claim 1, wherein the device substrate comprises a material selected from the group consisting of glass, f u sed silica, quartz, sapphire, and a metal.
The method of claim 1, wherein the thin film growth substrate comprises copper.
The method of claim 1, wherein the thin film growth substrate comprises an element selected from the group consisting of nickel, cobalt, ruthenium, iridium; and a transition metal.
The method of claim 1, wherein the thin film growth substrate comprises a plurality of thin film growth substrate areas which are not continuous with each other.
The method of claim 1, wherein the thin film growth substrate has a prepatte rn ed structure.
The method of claim 1, wherein forming the thin film growth substrate directly on the device substrate comprises evaporating the thin film growth substrate directly on the device substrate.
The method of claim 1, wherein forming the thin film growth substrate directly on the device substrate comprises sputtering the thin film growth substrate directly on the device substrate.
The method of claim 1, wherein forming the thin film growth substrate directly on the device substrate comprises electroplating the thin film growth substrate directly on the device substrate.
The method of claim 1, wherein the thin film growth substrate has a thickness of at least approximately 100 nanometers.
The method of claim 1, further comprising removing at least a first portion of a metallic oxide from the thin film growth substrate before forming graphene on the thin film growth substrate.
The method of claim 1, wherein forming graphene on the thin film growth substrate comprises forming graphene on the thin film growth substrate in a chemical vapor deposition (CVD) process.
The method of claim 1, wherein forming graphene on the thin film growth substrate comprises forming a substantially single layer of graphene on the thin film growth substrate.
The method of claim 1, further comprising treating the patterned graphene layer formed upon the undercut patterned thin film growth substrate to provide a treated patterned graphene layer that passivates sidewalls of the undercut patterned thin film growth substrate.
The method of claim 1 wherein the patterned thin film growth substrate has smaller areal dimensions in comparison with the patterned graphene layer.
(Previously Presented as New) The method of claim 1 wherein the method uses a single photolithographic process step. 9
canceled
canceled
A method of manufacturing one or more graphene devices, comprising: forming a thin film growth substrate directly on a device substrate; forming a graphene layer on the thin film growth substrate; 4 processing the graphene layer and the thin film growth substrate to form a patterned graphene layer upon a patterned thin film growth substrate; coating at least a portion of the graphene with a photoresist layer; patterning the photoresist layer to define the one or more graphene devices under a remaining photoresist pattern; removing graphene not protected by the remaining photoresist pattern; removing the thin film growth substrate not protected by the remaining photoresist pattern; and removing at least part of the remaining photoresist pattern.
The method of claim 24, wherein at least one of the defined one or more graphene devices comprises a pair of pads connected by a graphene channel.
The method of claim 24, wherein patterning the photoresist layer to define one or more graphene devices under the remaining photoresist pattern comprises removing unwanted photoresist residue from the photoresist layer.
The method of claim 24, wherein removing said thin film growth substrate not protected by the remaining photoresist pattern comprises exposing the thin film growth substrate to an etch solution.
The method of claim 24, wherein said removing at least part of the remaining photoresist pattern occurs after the thin film growth substrate is removed.
33-51. (Cancel) canceled
An apparatus, comprising: a device substrate; a patterned thin film growth substrate formed directly on at least a portion of the device substrate and comprising at least two patterned thin film growth substrate pads which include sidewalls; and a patterned graphene layer formed directly on at least a portion of the patterned thin film growth substrate s including the at least two patterned thin film growth substrate pads, the patterned thin film growth substrate being undercut in comparison with the patterned graphene layer which extends beyond the sidewalls of the at least two patterned thin film growth substrate pads and bridges between the at least two patterned thin film growth substrate pads and which also passivates the sidewalls of the at least two patterned thin film growth substrate pads.
The apparatus of claim 52, wherein the device substrate comprises silicon.
The apparatus of claim 52, wherein the device substrate comprises a semiconductor and an insulator. 6
The apparatus of claim 52, wherein the device substrate comprises a material selected from the group consisting of glass, fused silica, quartz, sapphire, and a metal.
The apparatus of claim 52, wherein the thin film growth substrate comprises copper.
The apparatus of claim 52, wherein the thin film growth substrate comprises an element selected from the group consisting of nickel, cobalt, ruthenium, iridium, and a transition metal.
The apparatus of claim 52, wherein the thin film growth substrate comprises an evaporated metallic film.
The apparatus of claim 52, wherein the thin film growth substrate has a thickness of at least approximately 100 nanometers.
The apparatus of claim 52, wherein the thin film growth substrate comprises a plurality of thin film growth substrate areas which are not continuous with each other.
The apparatus of claim 52, wherein the thin film growth substrate has a prepatterned structure.
The apparatus of claim 52 wherein the patterned thin film growth layer has smaller areal dimensions in comparison with the patterned graphene layer. 7
64-89. Cancel canceled
A method for fabricating a graphene device comprising: forming over a device substrate a thin film growth substrate; forming upon the thin film growth substrate a graphene layer; patterning sequentially the graphene layer and the thin film growth substrate to form a patterned graphene layer formed coextensive upon a patterned thin film growth substrate; undercutting the patterned thin film growth substrate with respect to the patterned graphene layer formed upon the patterned thin film growth substrate to provide an undercut patterned thin film growth substrate having the patterned graphene layer formed upon the undercut patterned thin film growth substrate; and treating the patterned graphene layer formed upon the undercut patterned thin film growth substrate to provide a treated patterned graphene layer that passivates sidewalls of the undercut patterned thin film growth substrate, wherein the undercutting provides a pair of patterned thin film growth substrate pads having formed thereupon the patterned graphene layer, a separation distance of the pair of patterned thin film growth substrate pads defining a graphene channel within the patterned graphene layer.
- 94. (Cancel) canceled
A graphene device comprising: a device substrate; a patterned thin film growth substrate comprising two separated pads located upon the device substrate; and a patterned graphene layer located upon z bridging to and undercut by the two separated pads a patterned thin film growth substrate formed directly on at least a portion of the device substrate and comprising at least two patterned thin film growth substrate pads which include sidewalls; and a patterned graphene layer formed directly on at least a portion of the patterned thin film growth substrate, including the at least two patterned thin film growth substrate pads, the patterned thin film growth substrate being undercut in comparison with the patterned graphene la y er which extends beyond the sidewalls of the at least two patterned thin film growth 8 substrate pads and bridges between the at least two patterned thin film growth substrate pads and which also passivates the sidewalls of the at least two patterned thin film growth substrate pads, where a separation distance of the pair of patterned thin film growth substrate pads defines a graphene channel within the graphene device.
Layer stacks claimed or described, ordered top of device to substrate.
graphene device (method product)
graphene apparatus with undercut patterned thin film substrate
Materials described outside the worked examples.
graphene
C
thin film growth substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 B shows representative Raman spectra for a manufactured graphene device after growth of a graphene layer using an embodiment of the manufacturing method …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 10–20 minutes | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,362,364Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an embodiment of a method of manufacturing one or more graphene devices. [0014]
FIGS. 2A-2G, respectively, and schematically illustrate the fabrication steps from a perspective view for the embodied method of manufacturing a graphene …
FIGS. 3A-3G correspond to
FIG. 4 B shows representative Raman spectra for a manufactured graphene device after growth of a graphene layer using an embodiment of the manufacturing method …
FIG. 5A schematically illustrates an embodiment of a single layer graphene device having patterned electrodes contacting the graphene from below and being …
FIG. 6B is a graph of median resistance (R m e dian) f or a va r iety of SLG devices produced using an embodiment of the manufacturing method discussed with …
FIG. 7 schematically illustrates a cross-section of an embodiment of a transistor comprising a single layer graphene channel grown partially on and coupling a …
FIG. 8 schematically illustrates a cross-section of another embodiment of a transistor comprising a single layer graphene channel grown partially on and …
FIG. 9B shows saturation current observed for negative drain- source bias (V D S) f o r an embodiment of the transistor illustrated in
FIGS. 10 A and lO B schematically illustrate cross-sections for different embodiments of an integrated circuit. WO 2011/046655 PCT/US₂ 010/042702 6 [0031]
FIG. 11 schematically illustrates that graphene is an effective barri er against oxidation and diffusion. [0032]
FIG. 12A shows a Brightfield image of evaporated copper film with graphene, where a portion of the copper film has been exposed to hydrogen peroxide. [0033]
FIG. 13 illustrates one embodiment of a fabrication method. [0035] It will be appreciated that for purposes of clarity and where deemed appropriate, reference …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing one or more graphene devices, comprising forming a thin film growth substrate directly on a device substrate; forming a graphene layer on the thin film growth substrate; processing the graphene layer and the thin film growth substrate to form a patterned graphene layer upon a patterned thin film growth substrate; and undercutting the patterned thin film growth substrate with respect to the patterned graphene layer formed upon the patterned thin film growth substrate to provide an undercut patterned thin film growth substrate having the patterned graphene layer formed upon the undercut patterned thin film growth substrate.
The method of claim 1, wherein the device substrate comprises silicon.
The method of claim 1, wherein the device substrate comprises a semiconductor.
The method of claim 1, wherein the device substrate comprises a material selected from the group consisting of glass, f u sed silica, quartz, sapphire, and a metal.
The method of claim 1, wherein the thin film growth substrate comprises copper.
The method of claim 1, wherein the thin film growth substrate comprises an element selected from the group consisting of nickel, cobalt, ruthenium, iridium; and a transition metal.
The method of claim 1, wherein the thin film growth substrate comprises a plurality of thin film growth substrate areas which are not continuous with each other.
The method of claim 1, wherein the thin film growth substrate has a prepatte rn ed structure.
The method of claim 1, wherein forming the thin film growth substrate directly on the device substrate comprises evaporating the thin film growth substrate directly on the device substrate.
The method of claim 1, wherein forming the thin film growth substrate directly on the device substrate comprises sputtering the thin film growth substrate directly on the device substrate.
The method of claim 1, wherein forming the thin film growth substrate directly on the device substrate comprises electroplating the thin film growth substrate directly on the device substrate.
The method of claim 1, wherein the thin film growth substrate has a thickness of at least approximately 100 nanometers.
The method of claim 1, further comprising removing at least a first portion of a metallic oxide from the thin film growth substrate before forming graphene on the thin film growth substrate.
The method of claim 1, wherein forming graphene on the thin film growth substrate comprises forming graphene on the thin film growth substrate in a chemical vapor deposition (CVD) process.
The method of claim 1, wherein forming graphene on the thin film growth substrate comprises forming a substantially single layer of graphene on the thin film growth substrate.
The method of claim 1, further comprising treating the patterned graphene layer formed upon the undercut patterned thin film growth substrate to provide a treated patterned graphene layer that passivates sidewalls of the undercut patterned thin film growth substrate.
The method of claim 1 wherein the patterned thin film growth substrate has smaller areal dimensions in comparison with the patterned graphene layer.
(Previously Presented as New) The method of claim 1 wherein the method uses a single photolithographic process step. 9
canceled
canceled
A method of manufacturing one or more graphene devices, comprising: forming a thin film growth substrate directly on a device substrate; forming a graphene layer on the thin film growth substrate; 4 processing the graphene layer and the thin film growth substrate to form a patterned graphene layer upon a patterned thin film growth substrate; coating at least a portion of the graphene with a photoresist layer; patterning the photoresist layer to define the one or more graphene devices under a remaining photoresist pattern; removing graphene not protected by the remaining photoresist pattern; removing the thin film growth substrate not protected by the remaining photoresist pattern; and removing at least part of the remaining photoresist pattern.
The method of claim 24, wherein at least one of the defined one or more graphene devices comprises a pair of pads connected by a graphene channel.
The method of claim 24, wherein patterning the photoresist layer to define one or more graphene devices under the remaining photoresist pattern comprises removing unwanted photoresist residue from the photoresist layer.
The method of claim 24, wherein removing said thin film growth substrate not protected by the remaining photoresist pattern comprises exposing the thin film growth substrate to an etch solution.
The method of claim 24, wherein said removing at least part of the remaining photoresist pattern occurs after the thin film growth substrate is removed.
33-51. (Cancel) canceled
An apparatus, comprising: a device substrate; a patterned thin film growth substrate formed directly on at least a portion of the device substrate and comprising at least two patterned thin film growth substrate pads which include sidewalls; and a patterned graphene layer formed directly on at least a portion of the patterned thin film growth substrate s including the at least two patterned thin film growth substrate pads, the patterned thin film growth substrate being undercut in comparison with the patterned graphene layer which extends beyond the sidewalls of the at least two patterned thin film growth substrate pads and bridges between the at least two patterned thin film growth substrate pads and which also passivates the sidewalls of the at least two patterned thin film growth substrate pads.
The apparatus of claim 52, wherein the device substrate comprises silicon.
The apparatus of claim 52, wherein the device substrate comprises a semiconductor and an insulator. 6
The apparatus of claim 52, wherein the device substrate comprises a material selected from the group consisting of glass, fused silica, quartz, sapphire, and a metal.
The apparatus of claim 52, wherein the thin film growth substrate comprises copper.
The apparatus of claim 52, wherein the thin film growth substrate comprises an element selected from the group consisting of nickel, cobalt, ruthenium, iridium, and a transition metal.
The apparatus of claim 52, wherein the thin film growth substrate comprises an evaporated metallic film.
The apparatus of claim 52, wherein the thin film growth substrate has a thickness of at least approximately 100 nanometers.
The apparatus of claim 52, wherein the thin film growth substrate comprises a plurality of thin film growth substrate areas which are not continuous with each other.
The apparatus of claim 52, wherein the thin film growth substrate has a prepatterned structure.
The apparatus of claim 52 wherein the patterned thin film growth layer has smaller areal dimensions in comparison with the patterned graphene layer. 7
64-89. Cancel canceled
A method for fabricating a graphene device comprising: forming over a device substrate a thin film growth substrate; forming upon the thin film growth substrate a graphene layer; patterning sequentially the graphene layer and the thin film growth substrate to form a patterned graphene layer formed coextensive upon a patterned thin film growth substrate; undercutting the patterned thin film growth substrate with respect to the patterned graphene layer formed upon the patterned thin film growth substrate to provide an undercut patterned thin film growth substrate having the patterned graphene layer formed upon the undercut patterned thin film growth substrate; and treating the patterned graphene layer formed upon the undercut patterned thin film growth substrate to provide a treated patterned graphene layer that passivates sidewalls of the undercut patterned thin film growth substrate, wherein the undercutting provides a pair of patterned thin film growth substrate pads having formed thereupon the patterned graphene layer, a separation distance of the pair of patterned thin film growth substrate pads defining a graphene channel within the patterned graphene layer.
- 94. (Cancel) canceled
A graphene device comprising: a device substrate; a patterned thin film growth substrate comprising two separated pads located upon the device substrate; and a patterned graphene layer located upon z bridging to and undercut by the two separated pads a patterned thin film growth substrate formed directly on at least a portion of the device substrate and comprising at least two patterned thin film growth substrate pads which include sidewalls; and a patterned graphene layer formed directly on at least a portion of the patterned thin film growth substrate, including the at least two patterned thin film growth substrate pads, the patterned thin film growth substrate being undercut in comparison with the patterned graphene la y er which extends beyond the sidewalls of the at least two patterned thin film growth 8 substrate pads and bridges between the at least two patterned thin film growth substrate pads and which also passivates the sidewalls of the at least two patterned thin film growth substrate pads, where a separation distance of the pair of patterned thin film growth substrate pads defines a graphene channel within the graphene device.
Layer stacks claimed or described, ordered top of device to substrate.
graphene device (method product)
graphene apparatus with undercut patterned thin film substrate
Materials described outside the worked examples.
graphene
C
thin film growth substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 B shows representative Raman spectra for a manufactured graphene device after growth of a graphene layer using an embodiment of the manufacturing method …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 10–20 minutes | — |
Thickness |
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