Patent
US 9,337,275Electrical Contact for Graphene Part
Guenther Ruhl
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,337,275Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows an II U diagram of a graphite-tita ni um contact;
Figure 2A shows schematic cross sections of an elect ri cal device du ri ng different stages of a formation of a graphite contact at a top surface/side of the graphene;
Figure 2B shows schematic cross sections of an elect n cal device du n ng different stages of a formation of a graphite contact at a top surface/side of a multi-layer graphene structure, the multi-layer graphene structure contact in g a sin gle-layer graphene part;
Figure 2C shows schematic cross sections of an elect n cal device du n ng different stages of a formation of a lateral graphite contact at a side of the graphene;
Figure 2D shows schematic cross sections of an elect ri cal device du ri ng different stages of a formation of a lateral graphite contact of a multi-layer graphene structure, the multi- layer graphene structure laterally contact in g a sin gle-layer graphene part;
Figure 3A shows schematic cross sections of an elect n cal device du ri ng different stages of provid in g a graphite contact at a bottom surface/side of the graphene;
Figure 3B shows schematic cross sections of an elect ri cal device du n ng different stages of provid in g a graphite contact at a bottom surface/side of a multi-layer graphene structure, the multi-layer graphene structure contact in g a sin gle-layer graphene part;
Figures 4A and 4B illustrate Raman spectra of simultaneously deposited s in gle-layer graphene (
Figure 4B);
Figure 5 shows schematic cross sections of forming a sin gle-layer/multi-layer comb in ation structure with transfer onto an arbitrary substrate; INF 2013 P 51864 US -3-
Figure 6 shows schematic cross sections of forming a single-layer/multi-layer combination structure with transfer onto an arbitrary substrate, wherein a diffusion barrier is provided by between a first metal substrate and a second metal substrate; and
Figure 7 shows schematic cross sections of forming a single-layer/multi-layer combination structure directly on an arbitrary (final) substrate. [0021] Before discussing the present embodiments of the invention in further detail using the drawings, it is pointed out that in the figures, identical …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) An electrical device comprising: a single-layer graphene part extending in a lateral direction; a multi-layer graphene structure laterally contacting the single-layer graphene part; and a graphite part in contact with a surface of the multi-layer graphene structure, wherein the graphite part comprises crystallites having different spatial orientations.
The electrical device according to claim 1, wherein the graphite part is spaced apart from the single-layer graphene part in the lateral direction.
The electrical device according to claim 1, wherein the multi-layer graphene structure and the graphite part form an electrical contact for the single-layer graphene part.
The electrical device according to claim 1, wherein multi-layer graphene structure forms a transition region between the single-layer graphene part and the graphite part.
The electrical device according to claim 1, further comprising a substrate, wherein the single-layer graphene part and the multi-layer graphene structure are arranged at a surface of the substrate, and wherein at least a portion of the graphite part is a rr anged at a surface of the multi-layer graphene structure opposite to the substrate.
The electrical device according to claim 1, further comprising a substrate, wherein the single-layer graphene part and a first portion of the multi-layer graphene structure are arranged at a surface of the substrate, and wherein the graphite part is embedded in the INF 2013 P 51864 US Page 2 of 9 substrate so that a second portion of the multi-layer graphene structure is in contact with the graphite part.
The electrical device according to claim 1, wherein the graphite part comprises a graphite conductor line providing an electrical connection between the electrical device and a further electrical device.
(Cu rr ently Amended) An electrical device comprising: a graphene part extending in a lateral direction; and a graphite part configured to provide a lateral contact for the graphene part, wherein the graphite part comprises crystallites having different spatial orientations.
The electrical device according to claim 8, further comprising a multi-layer graphene structure providing a transition contact region between the graphene part and the graphite part, wherein the multi-layer graphene structure and the graphite part form an electrical contact for the graphene part.
The electrical device according to claim 8, wherein the graphite part comprises a graphite conductor line providing an electrical connection between the electrical device and a further electrical device.
(Cu rr ently Amended) A method for manufacturing an electrical device, the method comprising: forming a single-layer graphene part on a substrate; forming a multi-layer graphene structure on the substrate laterally adjacent to and contacting the single-layer graphene part; and providing a graphite part contacting a surface of the multi-layer graphene structure, wherein the graphite part comprises crystallites having different spatial orientations.
The method according to claim 14, wherein the single-layer graphene part and the multi-layer graphene structure are formed concu rr ently.
The method according to claim 14, wherein the graphite part is spaced apart from the single-layer graphene part in a direction parallel to an extension of the single-layer graphene part. INF 2013 P 51864 U S Page 4 of 9
The method according to claim 14, wherein providing the graphite part comprises embedding the graphite part in the substrate, and wherein the single-layer graphene part and the multi-layer graphene structure are formed at a surface of the substrate and of the graphite part so that the multi-layer graphene structure contacts the graphite part.
The method according to claim 14, further comprising: forming a hardmask at a surface of the single-layer graphene part and at a first portion of a surface of the multi-layer graphene structure; depositing graphite at an exposed surface of the hardmask and a second portion of the surface of the multi-layer graphene structure, said second portion not being covered by the hardmask; and removing the hardmask and a portion of the graphite that has been deposited at the exposed surface of the hardmask, while leaving another portion of the graphite that has been deposited at the second portion of the surface of the multi-layer graphene structure.
The method according to claim 14, wherein the single-layer graphene part and the multi-layer graphene structure are formed on a temporary substrate, and wherein the method further comprises: transferring a combined structure comprising the single-layer graphene part and the multi-layer graphene structure from the temporary substrate to a final substrate.
The method according to claim 14, further comprising: providing a surface of a first metal; providing a surface of a second metal laterally neighboring the surface of the first metal; and INF 2013 P 51864 U S Page 5 of 9 concu rr ently depositing the single-layer graphene part and the multi-layer graphene structure at the surfaces of the first and second metals, wherein the single-layer graphene part is deposited at the surface of the first metal and the multi-layer graphene structure is deposited at the surface of the second metal.
A method for manufacturing an electrical device, the method comp ri sing: providing a first metal substrate and a second metal substrate laterally neighboring to each other; forming a single-layer graphene part at a surface or an interface of the first metal substrate; forming a multi-layer graphene structure at a surface or an interface of the second metal substrate; and forming a graphite part at a surface of the multi-layer graphene structure.
(Cu rr ently Amended) A method for manufacturing an electrical device, the method comprising: forming a graphene part on a substrate; and providing a graphite part on the substrate laterally adjacent to the graphene part for providing a lateral contact for the graphene part, wherein the graphite part comprises crystallites having different spatial orientations. INF 2013 P 51864 US Page 7 of 9
Layer stacks claimed or described, ordered top of device to substrate.
graphene electrical device with graphite contact via multi-layer graphene transition
graphene electrical device with lateral graphite contact
Materials described outside the worked examples.
single-layer graphene
C
ethene
C₂H₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figures 4A and 4B illustrate Raman spectra of simultaneously deposited s in gle-layer graphene (
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphite-titanium contact I/V linearity (ohmic behavior) | — | C |
graphite specific resistance range | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,337,275Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows an II U diagram of a graphite-tita ni um contact;
Figure 2A shows schematic cross sections of an elect ri cal device du ri ng different stages of a formation of a graphite contact at a top surface/side of the graphene;
Figure 2B shows schematic cross sections of an elect n cal device du n ng different stages of a formation of a graphite contact at a top surface/side of a multi-layer graphene structure, the multi-layer graphene structure contact in g a sin gle-layer graphene part;
Figure 2C shows schematic cross sections of an elect n cal device du n ng different stages of a formation of a lateral graphite contact at a side of the graphene;
Figure 2D shows schematic cross sections of an elect ri cal device du ri ng different stages of a formation of a lateral graphite contact of a multi-layer graphene structure, the multi- layer graphene structure laterally contact in g a sin gle-layer graphene part;
Figure 3A shows schematic cross sections of an elect n cal device du ri ng different stages of provid in g a graphite contact at a bottom surface/side of the graphene;
Figure 3B shows schematic cross sections of an elect ri cal device du n ng different stages of provid in g a graphite contact at a bottom surface/side of a multi-layer graphene structure, the multi-layer graphene structure contact in g a sin gle-layer graphene part;
Figures 4A and 4B illustrate Raman spectra of simultaneously deposited s in gle-layer graphene (
Figure 4B);
Figure 5 shows schematic cross sections of forming a sin gle-layer/multi-layer comb in ation structure with transfer onto an arbitrary substrate; INF 2013 P 51864 US -3-
Figure 6 shows schematic cross sections of forming a single-layer/multi-layer combination structure with transfer onto an arbitrary substrate, wherein a diffusion barrier is provided by between a first metal substrate and a second metal substrate; and
Figure 7 shows schematic cross sections of forming a single-layer/multi-layer combination structure directly on an arbitrary (final) substrate. [0021] Before discussing the present embodiments of the invention in further detail using the drawings, it is pointed out that in the figures, identical …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) An electrical device comprising: a single-layer graphene part extending in a lateral direction; a multi-layer graphene structure laterally contacting the single-layer graphene part; and a graphite part in contact with a surface of the multi-layer graphene structure, wherein the graphite part comprises crystallites having different spatial orientations.
The electrical device according to claim 1, wherein the graphite part is spaced apart from the single-layer graphene part in the lateral direction.
The electrical device according to claim 1, wherein the multi-layer graphene structure and the graphite part form an electrical contact for the single-layer graphene part.
The electrical device according to claim 1, wherein multi-layer graphene structure forms a transition region between the single-layer graphene part and the graphite part.
The electrical device according to claim 1, further comprising a substrate, wherein the single-layer graphene part and the multi-layer graphene structure are arranged at a surface of the substrate, and wherein at least a portion of the graphite part is a rr anged at a surface of the multi-layer graphene structure opposite to the substrate.
The electrical device according to claim 1, further comprising a substrate, wherein the single-layer graphene part and a first portion of the multi-layer graphene structure are arranged at a surface of the substrate, and wherein the graphite part is embedded in the INF 2013 P 51864 US Page 2 of 9 substrate so that a second portion of the multi-layer graphene structure is in contact with the graphite part.
The electrical device according to claim 1, wherein the graphite part comprises a graphite conductor line providing an electrical connection between the electrical device and a further electrical device.
(Cu rr ently Amended) An electrical device comprising: a graphene part extending in a lateral direction; and a graphite part configured to provide a lateral contact for the graphene part, wherein the graphite part comprises crystallites having different spatial orientations.
The electrical device according to claim 8, further comprising a multi-layer graphene structure providing a transition contact region between the graphene part and the graphite part, wherein the multi-layer graphene structure and the graphite part form an electrical contact for the graphene part.
The electrical device according to claim 8, wherein the graphite part comprises a graphite conductor line providing an electrical connection between the electrical device and a further electrical device.
(Cu rr ently Amended) A method for manufacturing an electrical device, the method comprising: forming a single-layer graphene part on a substrate; forming a multi-layer graphene structure on the substrate laterally adjacent to and contacting the single-layer graphene part; and providing a graphite part contacting a surface of the multi-layer graphene structure, wherein the graphite part comprises crystallites having different spatial orientations.
The method according to claim 14, wherein the single-layer graphene part and the multi-layer graphene structure are formed concu rr ently.
The method according to claim 14, wherein the graphite part is spaced apart from the single-layer graphene part in a direction parallel to an extension of the single-layer graphene part. INF 2013 P 51864 U S Page 4 of 9
The method according to claim 14, wherein providing the graphite part comprises embedding the graphite part in the substrate, and wherein the single-layer graphene part and the multi-layer graphene structure are formed at a surface of the substrate and of the graphite part so that the multi-layer graphene structure contacts the graphite part.
The method according to claim 14, further comprising: forming a hardmask at a surface of the single-layer graphene part and at a first portion of a surface of the multi-layer graphene structure; depositing graphite at an exposed surface of the hardmask and a second portion of the surface of the multi-layer graphene structure, said second portion not being covered by the hardmask; and removing the hardmask and a portion of the graphite that has been deposited at the exposed surface of the hardmask, while leaving another portion of the graphite that has been deposited at the second portion of the surface of the multi-layer graphene structure.
The method according to claim 14, wherein the single-layer graphene part and the multi-layer graphene structure are formed on a temporary substrate, and wherein the method further comprises: transferring a combined structure comprising the single-layer graphene part and the multi-layer graphene structure from the temporary substrate to a final substrate.
The method according to claim 14, further comprising: providing a surface of a first metal; providing a surface of a second metal laterally neighboring the surface of the first metal; and INF 2013 P 51864 U S Page 5 of 9 concu rr ently depositing the single-layer graphene part and the multi-layer graphene structure at the surfaces of the first and second metals, wherein the single-layer graphene part is deposited at the surface of the first metal and the multi-layer graphene structure is deposited at the surface of the second metal.
A method for manufacturing an electrical device, the method comp ri sing: providing a first metal substrate and a second metal substrate laterally neighboring to each other; forming a single-layer graphene part at a surface or an interface of the first metal substrate; forming a multi-layer graphene structure at a surface or an interface of the second metal substrate; and forming a graphite part at a surface of the multi-layer graphene structure.
(Cu rr ently Amended) A method for manufacturing an electrical device, the method comprising: forming a graphene part on a substrate; and providing a graphite part on the substrate laterally adjacent to the graphene part for providing a lateral contact for the graphene part, wherein the graphite part comprises crystallites having different spatial orientations. INF 2013 P 51864 US Page 7 of 9
Layer stacks claimed or described, ordered top of device to substrate.
graphene electrical device with graphite contact via multi-layer graphene transition
graphene electrical device with lateral graphite contact
Materials described outside the worked examples.
single-layer graphene
C
ethene
C₂H₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figures 4A and 4B illustrate Raman spectra of simultaneously deposited s in gle-layer graphene (
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphite-titanium contact I/V linearity (ohmic behavior) | — | C |
graphite specific resistance range | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,337,275Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows an II U diagram of a graphite-tita ni um contact;
Figure 2A shows schematic cross sections of an elect ri cal device du ri ng different stages of a formation of a graphite contact at a top surface/side of the graphene;
Figure 2B shows schematic cross sections of an elect n cal device du n ng different stages of a formation of a graphite contact at a top surface/side of a multi-layer graphene structure, the multi-layer graphene structure contact in g a sin gle-layer graphene part;
Figure 2C shows schematic cross sections of an elect n cal device du n ng different stages of a formation of a lateral graphite contact at a side of the graphene;
Figure 2D shows schematic cross sections of an elect ri cal device du ri ng different stages of a formation of a lateral graphite contact of a multi-layer graphene structure, the multi- layer graphene structure laterally contact in g a sin gle-layer graphene part;
Figure 3A shows schematic cross sections of an elect n cal device du ri ng different stages of provid in g a graphite contact at a bottom surface/side of the graphene;
Figure 3B shows schematic cross sections of an elect ri cal device du n ng different stages of provid in g a graphite contact at a bottom surface/side of a multi-layer graphene structure, the multi-layer graphene structure contact in g a sin gle-layer graphene part;
Figures 4A and 4B illustrate Raman spectra of simultaneously deposited s in gle-layer graphene (
Figure 4B);
Figure 5 shows schematic cross sections of forming a sin gle-layer/multi-layer comb in ation structure with transfer onto an arbitrary substrate; INF 2013 P 51864 US -3-
Figure 6 shows schematic cross sections of forming a single-layer/multi-layer combination structure with transfer onto an arbitrary substrate, wherein a diffusion barrier is provided by between a first metal substrate and a second metal substrate; and
Figure 7 shows schematic cross sections of forming a single-layer/multi-layer combination structure directly on an arbitrary (final) substrate. [0021] Before discussing the present embodiments of the invention in further detail using the drawings, it is pointed out that in the figures, identical …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) An electrical device comprising: a single-layer graphene part extending in a lateral direction; a multi-layer graphene structure laterally contacting the single-layer graphene part; and a graphite part in contact with a surface of the multi-layer graphene structure, wherein the graphite part comprises crystallites having different spatial orientations.
The electrical device according to claim 1, wherein the graphite part is spaced apart from the single-layer graphene part in the lateral direction.
The electrical device according to claim 1, wherein the multi-layer graphene structure and the graphite part form an electrical contact for the single-layer graphene part.
The electrical device according to claim 1, wherein multi-layer graphene structure forms a transition region between the single-layer graphene part and the graphite part.
The electrical device according to claim 1, further comprising a substrate, wherein the single-layer graphene part and the multi-layer graphene structure are arranged at a surface of the substrate, and wherein at least a portion of the graphite part is a rr anged at a surface of the multi-layer graphene structure opposite to the substrate.
The electrical device according to claim 1, further comprising a substrate, wherein the single-layer graphene part and a first portion of the multi-layer graphene structure are arranged at a surface of the substrate, and wherein the graphite part is embedded in the INF 2013 P 51864 US Page 2 of 9 substrate so that a second portion of the multi-layer graphene structure is in contact with the graphite part.
The electrical device according to claim 1, wherein the graphite part comprises a graphite conductor line providing an electrical connection between the electrical device and a further electrical device.
(Cu rr ently Amended) An electrical device comprising: a graphene part extending in a lateral direction; and a graphite part configured to provide a lateral contact for the graphene part, wherein the graphite part comprises crystallites having different spatial orientations.
The electrical device according to claim 8, further comprising a multi-layer graphene structure providing a transition contact region between the graphene part and the graphite part, wherein the multi-layer graphene structure and the graphite part form an electrical contact for the graphene part.
The electrical device according to claim 8, wherein the graphite part comprises a graphite conductor line providing an electrical connection between the electrical device and a further electrical device.
(Cu rr ently Amended) A method for manufacturing an electrical device, the method comprising: forming a single-layer graphene part on a substrate; forming a multi-layer graphene structure on the substrate laterally adjacent to and contacting the single-layer graphene part; and providing a graphite part contacting a surface of the multi-layer graphene structure, wherein the graphite part comprises crystallites having different spatial orientations.
The method according to claim 14, wherein the single-layer graphene part and the multi-layer graphene structure are formed concu rr ently.
The method according to claim 14, wherein the graphite part is spaced apart from the single-layer graphene part in a direction parallel to an extension of the single-layer graphene part. INF 2013 P 51864 U S Page 4 of 9
The method according to claim 14, wherein providing the graphite part comprises embedding the graphite part in the substrate, and wherein the single-layer graphene part and the multi-layer graphene structure are formed at a surface of the substrate and of the graphite part so that the multi-layer graphene structure contacts the graphite part.
The method according to claim 14, further comprising: forming a hardmask at a surface of the single-layer graphene part and at a first portion of a surface of the multi-layer graphene structure; depositing graphite at an exposed surface of the hardmask and a second portion of the surface of the multi-layer graphene structure, said second portion not being covered by the hardmask; and removing the hardmask and a portion of the graphite that has been deposited at the exposed surface of the hardmask, while leaving another portion of the graphite that has been deposited at the second portion of the surface of the multi-layer graphene structure.
The method according to claim 14, wherein the single-layer graphene part and the multi-layer graphene structure are formed on a temporary substrate, and wherein the method further comprises: transferring a combined structure comprising the single-layer graphene part and the multi-layer graphene structure from the temporary substrate to a final substrate.
The method according to claim 14, further comprising: providing a surface of a first metal; providing a surface of a second metal laterally neighboring the surface of the first metal; and INF 2013 P 51864 U S Page 5 of 9 concu rr ently depositing the single-layer graphene part and the multi-layer graphene structure at the surfaces of the first and second metals, wherein the single-layer graphene part is deposited at the surface of the first metal and the multi-layer graphene structure is deposited at the surface of the second metal.
A method for manufacturing an electrical device, the method comp ri sing: providing a first metal substrate and a second metal substrate laterally neighboring to each other; forming a single-layer graphene part at a surface or an interface of the first metal substrate; forming a multi-layer graphene structure at a surface or an interface of the second metal substrate; and forming a graphite part at a surface of the multi-layer graphene structure.
(Cu rr ently Amended) A method for manufacturing an electrical device, the method comprising: forming a graphene part on a substrate; and providing a graphite part on the substrate laterally adjacent to the graphene part for providing a lateral contact for the graphene part, wherein the graphite part comprises crystallites having different spatial orientations. INF 2013 P 51864 US Page 7 of 9
Layer stacks claimed or described, ordered top of device to substrate.
graphene electrical device with graphite contact via multi-layer graphene transition
graphene electrical device with lateral graphite contact
Materials described outside the worked examples.
single-layer graphene
C
ethene
C₂H₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figures 4A and 4B illustrate Raman spectra of simultaneously deposited s in gle-layer graphene (
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphite-titanium contact I/V linearity (ohmic behavior) | — | C |
graphite specific resistance range | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,337,275Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows an II U diagram of a graphite-tita ni um contact;
Figure 2A shows schematic cross sections of an elect ri cal device du ri ng different stages of a formation of a graphite contact at a top surface/side of the graphene;
Figure 2B shows schematic cross sections of an elect n cal device du n ng different stages of a formation of a graphite contact at a top surface/side of a multi-layer graphene structure, the multi-layer graphene structure contact in g a sin gle-layer graphene part;
Figure 2C shows schematic cross sections of an elect n cal device du n ng different stages of a formation of a lateral graphite contact at a side of the graphene;
Figure 2D shows schematic cross sections of an elect ri cal device du ri ng different stages of a formation of a lateral graphite contact of a multi-layer graphene structure, the multi- layer graphene structure laterally contact in g a sin gle-layer graphene part;
Figure 3A shows schematic cross sections of an elect n cal device du ri ng different stages of provid in g a graphite contact at a bottom surface/side of the graphene;
Figure 3B shows schematic cross sections of an elect ri cal device du n ng different stages of provid in g a graphite contact at a bottom surface/side of a multi-layer graphene structure, the multi-layer graphene structure contact in g a sin gle-layer graphene part;
Figures 4A and 4B illustrate Raman spectra of simultaneously deposited s in gle-layer graphene (
Figure 4B);
Figure 5 shows schematic cross sections of forming a sin gle-layer/multi-layer comb in ation structure with transfer onto an arbitrary substrate; INF 2013 P 51864 US -3-
Figure 6 shows schematic cross sections of forming a single-layer/multi-layer combination structure with transfer onto an arbitrary substrate, wherein a diffusion barrier is provided by between a first metal substrate and a second metal substrate; and
Figure 7 shows schematic cross sections of forming a single-layer/multi-layer combination structure directly on an arbitrary (final) substrate. [0021] Before discussing the present embodiments of the invention in further detail using the drawings, it is pointed out that in the figures, identical …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) An electrical device comprising: a single-layer graphene part extending in a lateral direction; a multi-layer graphene structure laterally contacting the single-layer graphene part; and a graphite part in contact with a surface of the multi-layer graphene structure, wherein the graphite part comprises crystallites having different spatial orientations.
The electrical device according to claim 1, wherein the graphite part is spaced apart from the single-layer graphene part in the lateral direction.
The electrical device according to claim 1, wherein the multi-layer graphene structure and the graphite part form an electrical contact for the single-layer graphene part.
The electrical device according to claim 1, wherein multi-layer graphene structure forms a transition region between the single-layer graphene part and the graphite part.
The electrical device according to claim 1, further comprising a substrate, wherein the single-layer graphene part and the multi-layer graphene structure are arranged at a surface of the substrate, and wherein at least a portion of the graphite part is a rr anged at a surface of the multi-layer graphene structure opposite to the substrate.
The electrical device according to claim 1, further comprising a substrate, wherein the single-layer graphene part and a first portion of the multi-layer graphene structure are arranged at a surface of the substrate, and wherein the graphite part is embedded in the INF 2013 P 51864 US Page 2 of 9 substrate so that a second portion of the multi-layer graphene structure is in contact with the graphite part.
The electrical device according to claim 1, wherein the graphite part comprises a graphite conductor line providing an electrical connection between the electrical device and a further electrical device.
(Cu rr ently Amended) An electrical device comprising: a graphene part extending in a lateral direction; and a graphite part configured to provide a lateral contact for the graphene part, wherein the graphite part comprises crystallites having different spatial orientations.
The electrical device according to claim 8, further comprising a multi-layer graphene structure providing a transition contact region between the graphene part and the graphite part, wherein the multi-layer graphene structure and the graphite part form an electrical contact for the graphene part.
The electrical device according to claim 8, wherein the graphite part comprises a graphite conductor line providing an electrical connection between the electrical device and a further electrical device.
(Cu rr ently Amended) A method for manufacturing an electrical device, the method comprising: forming a single-layer graphene part on a substrate; forming a multi-layer graphene structure on the substrate laterally adjacent to and contacting the single-layer graphene part; and providing a graphite part contacting a surface of the multi-layer graphene structure, wherein the graphite part comprises crystallites having different spatial orientations.
The method according to claim 14, wherein the single-layer graphene part and the multi-layer graphene structure are formed concu rr ently.
The method according to claim 14, wherein the graphite part is spaced apart from the single-layer graphene part in a direction parallel to an extension of the single-layer graphene part. INF 2013 P 51864 U S Page 4 of 9
The method according to claim 14, wherein providing the graphite part comprises embedding the graphite part in the substrate, and wherein the single-layer graphene part and the multi-layer graphene structure are formed at a surface of the substrate and of the graphite part so that the multi-layer graphene structure contacts the graphite part.
The method according to claim 14, further comprising: forming a hardmask at a surface of the single-layer graphene part and at a first portion of a surface of the multi-layer graphene structure; depositing graphite at an exposed surface of the hardmask and a second portion of the surface of the multi-layer graphene structure, said second portion not being covered by the hardmask; and removing the hardmask and a portion of the graphite that has been deposited at the exposed surface of the hardmask, while leaving another portion of the graphite that has been deposited at the second portion of the surface of the multi-layer graphene structure.
The method according to claim 14, wherein the single-layer graphene part and the multi-layer graphene structure are formed on a temporary substrate, and wherein the method further comprises: transferring a combined structure comprising the single-layer graphene part and the multi-layer graphene structure from the temporary substrate to a final substrate.
The method according to claim 14, further comprising: providing a surface of a first metal; providing a surface of a second metal laterally neighboring the surface of the first metal; and INF 2013 P 51864 U S Page 5 of 9 concu rr ently depositing the single-layer graphene part and the multi-layer graphene structure at the surfaces of the first and second metals, wherein the single-layer graphene part is deposited at the surface of the first metal and the multi-layer graphene structure is deposited at the surface of the second metal.
A method for manufacturing an electrical device, the method comp ri sing: providing a first metal substrate and a second metal substrate laterally neighboring to each other; forming a single-layer graphene part at a surface or an interface of the first metal substrate; forming a multi-layer graphene structure at a surface or an interface of the second metal substrate; and forming a graphite part at a surface of the multi-layer graphene structure.
(Cu rr ently Amended) A method for manufacturing an electrical device, the method comprising: forming a graphene part on a substrate; and providing a graphite part on the substrate laterally adjacent to the graphene part for providing a lateral contact for the graphene part, wherein the graphite part comprises crystallites having different spatial orientations. INF 2013 P 51864 US Page 7 of 9
Layer stacks claimed or described, ordered top of device to substrate.
graphene electrical device with graphite contact via multi-layer graphene transition
graphene electrical device with lateral graphite contact
Materials described outside the worked examples.
single-layer graphene
C
ethene
C₂H₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figures 4A and 4B illustrate Raman spectra of simultaneously deposited s in gle-layer graphene (
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphite-titanium contact I/V linearity (ohmic behavior) | — | C |
graphite specific resistance range | — |
Related documents with shared materials, methods, properties, or citations.
nickel
Ni
copper
Cu
nickel-silicon alloy
titanium
Ti
Thickness | 1–20 nm | — |
Thickness | 3–15 nm | — |
Thickness | 4–10 nm | — |
Temperature | 500–1500 °C | — |
Pressure | 50–200 Pa | — |
Temperature | 600–1400 °C | — |
Temperature | 700–1300 °C | — |
Temperature | 800–1200 °C | — |
Pressure | 60–180 Pa | — |
Pressure | 70–150 Pa | — |
Pressure | 80–130 Pa | — |
Thickness | ≤ 40 cm | — |
nickel
Ni
copper
Cu
nickel-silicon alloy
titanium
Ti
Thickness | 1–20 nm | — |
Thickness | 3–15 nm | — |
Thickness | 4–10 nm | — |
Temperature | 500–1500 °C | — |
Pressure | 50–200 Pa | — |
Temperature | 600–1400 °C | — |
Temperature | 700–1300 °C | — |
Temperature | 800–1200 °C | — |
Pressure | 60–180 Pa | — |
Pressure | 70–150 Pa | — |
Pressure | 80–130 Pa | — |
Thickness | ≤ 40 cm | — |
nickel
Ni
copper
Cu
nickel-silicon alloy
titanium
Ti
Thickness | 1–20 nm | — |
Thickness | 3–15 nm | — |
Thickness | 4–10 nm | — |
Temperature | 500–1500 °C | — |
Pressure | 50–200 Pa | — |
Temperature | 600–1400 °C | — |
Temperature | 700–1300 °C | — |
Temperature | 800–1200 °C | — |
Pressure | 60–180 Pa | — |
Pressure | 70–150 Pa | — |
Pressure | 80–130 Pa | — |
Thickness | ≤ 40 cm | — |
nickel
Ni
copper
Cu
nickel-silicon alloy
titanium
Ti
Thickness | 1–20 nm | — |
Thickness | 3–15 nm | — |
Thickness | 4–10 nm | — |
Temperature | 500–1500 °C | — |
Pressure | 50–200 Pa | — |
Temperature | 600–1400 °C | — |
Temperature | 700–1300 °C | — |
Temperature | 800–1200 °C | — |
Pressure | 60–180 Pa | — |
Pressure | 70–150 Pa | — |
Pressure | 80–130 Pa | — |
Thickness | ≤ 40 cm | — |