Patent
US 8,852,341METHODS FOR PRODUCING GaN NUTRIENT FOR AMMONOTHERMAL GROWTH
Edward Letts
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,852,341Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic drawing of HVPG reactor according to one embodiment of the present disclosure. [0026]
FIG. 2 is an image of a growth region of the HVPG reactor according to one embodiment of the present disclosure. Pyrolytic BN provides the deposition surface …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing polycrystalline group III nitride comprising: (a) contacting a gaseous hydrogen halide with a group III element source material in a first heated region to produce a group III halide gas; (b) contacting the group III halide gas with ammonia gas in a growth region, the gaseous group III halide gas migrating from the first heated region to the growth region; and (c) producing a crystalline group III nitride in the growth region positioned downstream of the first heated region, wherein greater than 80 % of the total produced group III nitride is polycrystalline group III nitride.
The method of claim 1, wherein the group III element is Ga; the group III halide gas is GaX z, where X is a halide and z is an integer from 1 to 3; and the group III nitride is GaN.
The method of claim 1, wherein the hydrogen halide is hydrogen chloride.
The method of claim 1, wherein all surfaces in direct contact with the gases in one or both of the first heated region and the growth region are of a non-oxide material.
The method of claim 1, wherein the oxygen content of the polycrystalline group III nitride is less than 10 19 atoms/cm 3
The method of claim 1, wherein the oxygen content of the polycrystalline group III nitride is less than 10 17 atoms/cm 3
The method of claim 1, wherein the temperature of the first heated region and the temperature of the growth region are greater than 700 °C.
The method of claim 1, wherein the polycrystalline group III nitride is produced at a rate of greater than 5 g/hr.
The method of claim 1, wherein greater than 70 % of the group III element source material is converted to polycrystalline group III nitride.
The method of claim 1, wherein producing the crystalline group III nitride comprises crystallizing the crystalline group III nitride on a back etched surface of a polycrystalline group III nitride base material.
The method of claim 1, further comprising: submitting the polycrystalline group III nitride to an ammonothermal process to produce single-crystal group III nitride. 18-22
Polycrystalline GaN formed by the method of claim 1.
The method of claim 1, wherein the first heated region comprises a first portion of a chamber of a reactor, the growth region is positioned in a remaining portion of the chamber of the reactor, wherein the ammonia gas and a halide gas comprised of at least one of the hydrogen halide gas and the group III halide gas are heated in said first portion of the chamber, and the remaining portion of the chamber is separated from said first portion of the chamber to prevent having a gas mixture in said first portion of the chamber, said gas mixture being comprised of the ammonia gas and the halide gas. Page 6 of
A reactor for growing polycrystalline GaN comprising: a first heated region comprising a first gas inlet configured to introduce a nitrogen-containing gas; a second heated region comprising a second gas inlet configured to introduce a Ga halide- containing gas, the first heated region and the second heated region being configured to maintain separation of the gases in each region; and a growth region downstream of the first heated region and the second heated region, the growth region being in gaseous contact with the first heated region and the second heated region and configured to allow growth of polycrystalline GaN.
The reactor of claim 23, wherein the growth region has a surface configured to contact the gases and formed of a material other than an oxide.
The reactor of claim 23, wherein the halide-containing gas comprises HCl.
The reactor of claim 23, wherein the halide-containing gas comprises GaCl z where z is an integer from 1-3.
The reactor of claim 23, wherein the first and second heated regions are positioned in a first portion of a chamber of the reactor, the growth region is positioned in a remaining portion of the chamber of the reactor, and the first portion of the chamber is separated from the remaining portion to prevent having a mixture of the nitrogen- containing gas and the halide-containing gas in the first portion of the chamber.
Layer stacks claimed or described, ordered top of device to substrate.
reactor for growing polycrystalline GaN
No layer stack recorded.
Materials described outside the worked examples.
polycrystalline group III nitride
hydrogen halide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Oxygen Content | ≤ 10000000000000000000 atoms/cm3 | polycrystalline group III nitride |
Oxygen Content | ≤ 100000000000000000 atoms/cm3 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,852,341Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic drawing of HVPG reactor according to one embodiment of the present disclosure. [0026]
FIG. 2 is an image of a growth region of the HVPG reactor according to one embodiment of the present disclosure. Pyrolytic BN provides the deposition surface …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing polycrystalline group III nitride comprising: (a) contacting a gaseous hydrogen halide with a group III element source material in a first heated region to produce a group III halide gas; (b) contacting the group III halide gas with ammonia gas in a growth region, the gaseous group III halide gas migrating from the first heated region to the growth region; and (c) producing a crystalline group III nitride in the growth region positioned downstream of the first heated region, wherein greater than 80 % of the total produced group III nitride is polycrystalline group III nitride.
The method of claim 1, wherein the group III element is Ga; the group III halide gas is GaX z, where X is a halide and z is an integer from 1 to 3; and the group III nitride is GaN.
The method of claim 1, wherein the hydrogen halide is hydrogen chloride.
The method of claim 1, wherein all surfaces in direct contact with the gases in one or both of the first heated region and the growth region are of a non-oxide material.
The method of claim 1, wherein the oxygen content of the polycrystalline group III nitride is less than 10 19 atoms/cm 3
The method of claim 1, wherein the oxygen content of the polycrystalline group III nitride is less than 10 17 atoms/cm 3
The method of claim 1, wherein the temperature of the first heated region and the temperature of the growth region are greater than 700 °C.
The method of claim 1, wherein the polycrystalline group III nitride is produced at a rate of greater than 5 g/hr.
The method of claim 1, wherein greater than 70 % of the group III element source material is converted to polycrystalline group III nitride.
The method of claim 1, wherein producing the crystalline group III nitride comprises crystallizing the crystalline group III nitride on a back etched surface of a polycrystalline group III nitride base material.
The method of claim 1, further comprising: submitting the polycrystalline group III nitride to an ammonothermal process to produce single-crystal group III nitride. 18-22
Polycrystalline GaN formed by the method of claim 1.
The method of claim 1, wherein the first heated region comprises a first portion of a chamber of a reactor, the growth region is positioned in a remaining portion of the chamber of the reactor, wherein the ammonia gas and a halide gas comprised of at least one of the hydrogen halide gas and the group III halide gas are heated in said first portion of the chamber, and the remaining portion of the chamber is separated from said first portion of the chamber to prevent having a gas mixture in said first portion of the chamber, said gas mixture being comprised of the ammonia gas and the halide gas. Page 6 of
A reactor for growing polycrystalline GaN comprising: a first heated region comprising a first gas inlet configured to introduce a nitrogen-containing gas; a second heated region comprising a second gas inlet configured to introduce a Ga halide- containing gas, the first heated region and the second heated region being configured to maintain separation of the gases in each region; and a growth region downstream of the first heated region and the second heated region, the growth region being in gaseous contact with the first heated region and the second heated region and configured to allow growth of polycrystalline GaN.
The reactor of claim 23, wherein the growth region has a surface configured to contact the gases and formed of a material other than an oxide.
The reactor of claim 23, wherein the halide-containing gas comprises HCl.
The reactor of claim 23, wherein the halide-containing gas comprises GaCl z where z is an integer from 1-3.
The reactor of claim 23, wherein the first and second heated regions are positioned in a first portion of a chamber of the reactor, the growth region is positioned in a remaining portion of the chamber of the reactor, and the first portion of the chamber is separated from the remaining portion to prevent having a mixture of the nitrogen- containing gas and the halide-containing gas in the first portion of the chamber.
Layer stacks claimed or described, ordered top of device to substrate.
reactor for growing polycrystalline GaN
No layer stack recorded.
Materials described outside the worked examples.
polycrystalline group III nitride
hydrogen halide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Oxygen Content | ≤ 10000000000000000000 atoms/cm3 | polycrystalline group III nitride |
Oxygen Content | ≤ 100000000000000000 atoms/cm3 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,852,341Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic drawing of HVPG reactor according to one embodiment of the present disclosure. [0026]
FIG. 2 is an image of a growth region of the HVPG reactor according to one embodiment of the present disclosure. Pyrolytic BN provides the deposition surface …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing polycrystalline group III nitride comprising: (a) contacting a gaseous hydrogen halide with a group III element source material in a first heated region to produce a group III halide gas; (b) contacting the group III halide gas with ammonia gas in a growth region, the gaseous group III halide gas migrating from the first heated region to the growth region; and (c) producing a crystalline group III nitride in the growth region positioned downstream of the first heated region, wherein greater than 80 % of the total produced group III nitride is polycrystalline group III nitride.
The method of claim 1, wherein the group III element is Ga; the group III halide gas is GaX z, where X is a halide and z is an integer from 1 to 3; and the group III nitride is GaN.
The method of claim 1, wherein the hydrogen halide is hydrogen chloride.
The method of claim 1, wherein all surfaces in direct contact with the gases in one or both of the first heated region and the growth region are of a non-oxide material.
The method of claim 1, wherein the oxygen content of the polycrystalline group III nitride is less than 10 19 atoms/cm 3
The method of claim 1, wherein the oxygen content of the polycrystalline group III nitride is less than 10 17 atoms/cm 3
The method of claim 1, wherein the temperature of the first heated region and the temperature of the growth region are greater than 700 °C.
The method of claim 1, wherein the polycrystalline group III nitride is produced at a rate of greater than 5 g/hr.
The method of claim 1, wherein greater than 70 % of the group III element source material is converted to polycrystalline group III nitride.
The method of claim 1, wherein producing the crystalline group III nitride comprises crystallizing the crystalline group III nitride on a back etched surface of a polycrystalline group III nitride base material.
The method of claim 1, further comprising: submitting the polycrystalline group III nitride to an ammonothermal process to produce single-crystal group III nitride. 18-22
Polycrystalline GaN formed by the method of claim 1.
The method of claim 1, wherein the first heated region comprises a first portion of a chamber of a reactor, the growth region is positioned in a remaining portion of the chamber of the reactor, wherein the ammonia gas and a halide gas comprised of at least one of the hydrogen halide gas and the group III halide gas are heated in said first portion of the chamber, and the remaining portion of the chamber is separated from said first portion of the chamber to prevent having a gas mixture in said first portion of the chamber, said gas mixture being comprised of the ammonia gas and the halide gas. Page 6 of
A reactor for growing polycrystalline GaN comprising: a first heated region comprising a first gas inlet configured to introduce a nitrogen-containing gas; a second heated region comprising a second gas inlet configured to introduce a Ga halide- containing gas, the first heated region and the second heated region being configured to maintain separation of the gases in each region; and a growth region downstream of the first heated region and the second heated region, the growth region being in gaseous contact with the first heated region and the second heated region and configured to allow growth of polycrystalline GaN.
The reactor of claim 23, wherein the growth region has a surface configured to contact the gases and formed of a material other than an oxide.
The reactor of claim 23, wherein the halide-containing gas comprises HCl.
The reactor of claim 23, wherein the halide-containing gas comprises GaCl z where z is an integer from 1-3.
The reactor of claim 23, wherein the first and second heated regions are positioned in a first portion of a chamber of the reactor, the growth region is positioned in a remaining portion of the chamber of the reactor, and the first portion of the chamber is separated from the remaining portion to prevent having a mixture of the nitrogen- containing gas and the halide-containing gas in the first portion of the chamber.
Layer stacks claimed or described, ordered top of device to substrate.
reactor for growing polycrystalline GaN
No layer stack recorded.
Materials described outside the worked examples.
polycrystalline group III nitride
hydrogen halide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Oxygen Content | ≤ 10000000000000000000 atoms/cm3 | polycrystalline group III nitride |
Oxygen Content | ≤ 100000000000000000 atoms/cm3 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,852,341Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic drawing of HVPG reactor according to one embodiment of the present disclosure. [0026]
FIG. 2 is an image of a growth region of the HVPG reactor according to one embodiment of the present disclosure. Pyrolytic BN provides the deposition surface …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing polycrystalline group III nitride comprising: (a) contacting a gaseous hydrogen halide with a group III element source material in a first heated region to produce a group III halide gas; (b) contacting the group III halide gas with ammonia gas in a growth region, the gaseous group III halide gas migrating from the first heated region to the growth region; and (c) producing a crystalline group III nitride in the growth region positioned downstream of the first heated region, wherein greater than 80 % of the total produced group III nitride is polycrystalline group III nitride.
The method of claim 1, wherein the group III element is Ga; the group III halide gas is GaX z, where X is a halide and z is an integer from 1 to 3; and the group III nitride is GaN.
The method of claim 1, wherein the hydrogen halide is hydrogen chloride.
The method of claim 1, wherein all surfaces in direct contact with the gases in one or both of the first heated region and the growth region are of a non-oxide material.
The method of claim 1, wherein the oxygen content of the polycrystalline group III nitride is less than 10 19 atoms/cm 3
The method of claim 1, wherein the oxygen content of the polycrystalline group III nitride is less than 10 17 atoms/cm 3
The method of claim 1, wherein the temperature of the first heated region and the temperature of the growth region are greater than 700 °C.
The method of claim 1, wherein the polycrystalline group III nitride is produced at a rate of greater than 5 g/hr.
The method of claim 1, wherein greater than 70 % of the group III element source material is converted to polycrystalline group III nitride.
The method of claim 1, wherein producing the crystalline group III nitride comprises crystallizing the crystalline group III nitride on a back etched surface of a polycrystalline group III nitride base material.
The method of claim 1, further comprising: submitting the polycrystalline group III nitride to an ammonothermal process to produce single-crystal group III nitride. 18-22
Polycrystalline GaN formed by the method of claim 1.
The method of claim 1, wherein the first heated region comprises a first portion of a chamber of a reactor, the growth region is positioned in a remaining portion of the chamber of the reactor, wherein the ammonia gas and a halide gas comprised of at least one of the hydrogen halide gas and the group III halide gas are heated in said first portion of the chamber, and the remaining portion of the chamber is separated from said first portion of the chamber to prevent having a gas mixture in said first portion of the chamber, said gas mixture being comprised of the ammonia gas and the halide gas. Page 6 of
A reactor for growing polycrystalline GaN comprising: a first heated region comprising a first gas inlet configured to introduce a nitrogen-containing gas; a second heated region comprising a second gas inlet configured to introduce a Ga halide- containing gas, the first heated region and the second heated region being configured to maintain separation of the gases in each region; and a growth region downstream of the first heated region and the second heated region, the growth region being in gaseous contact with the first heated region and the second heated region and configured to allow growth of polycrystalline GaN.
The reactor of claim 23, wherein the growth region has a surface configured to contact the gases and formed of a material other than an oxide.
The reactor of claim 23, wherein the halide-containing gas comprises HCl.
The reactor of claim 23, wherein the halide-containing gas comprises GaCl z where z is an integer from 1-3.
The reactor of claim 23, wherein the first and second heated regions are positioned in a first portion of a chamber of the reactor, the growth region is positioned in a remaining portion of the chamber of the reactor, and the first portion of the chamber is separated from the remaining portion to prevent having a mixture of the nitrogen- containing gas and the halide-containing gas in the first portion of the chamber.
Layer stacks claimed or described, ordered top of device to substrate.
reactor for growing polycrystalline GaN
No layer stack recorded.
Materials described outside the worked examples.
polycrystalline group III nitride
hydrogen halide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Oxygen Content | ≤ 10000000000000000000 atoms/cm3 | polycrystalline group III nitride |
Oxygen Content | ≤ 100000000000000000 atoms/cm3 |
Related documents with shared materials, methods, properties, or citations.
ammonia
NH₃
gallium halide gas
GaXz
polycrystalline GaN
GaN
hydrogen chloride
HCl
gallium source material
Ga
non-oxide material
pyrolytic boron nitride
BN
single-crystal group III nitride
Temperature | 700–1200 °C | — |
Temperature | ≥ 700 °C | — |
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
ammonia
NH₃
gallium halide gas
GaXz
polycrystalline GaN
GaN
hydrogen chloride
HCl
gallium source material
Ga
non-oxide material
pyrolytic boron nitride
BN
single-crystal group III nitride
Temperature | 700–1200 °C | — |
Temperature | ≥ 700 °C | — |
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
ammonia
NH₃
gallium halide gas
GaXz
polycrystalline GaN
GaN
hydrogen chloride
HCl
gallium source material
Ga
non-oxide material
pyrolytic boron nitride
BN
single-crystal group III nitride
Temperature | 700–1200 °C | — |
Temperature | ≥ 700 °C | — |
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
ammonia
NH₃
gallium halide gas
GaXz
polycrystalline GaN
GaN
hydrogen chloride
HCl
gallium source material
Ga
non-oxide material
pyrolytic boron nitride
BN
single-crystal group III nitride
Temperature | 700–1200 °C | — |
Temperature | ≥ 700 °C | — |
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL