Listing of Claims: Claim 1 Claim 2: A gallium nitride crystal growth method as set forth in claim [[1]] 8, wherein the partial pressure of the carrier gas during the gallium nitride crystal growth in (e) is between 0.56 atm and 0.92 atm inclusive.

Claim 4: An epi-wafer manufacturing method, comprising: gallium nitride crystal growth method as set forth in claim [[1]] 8; a step of removing at least the undersubstrate to form a substrate composed of gallium nitride crystal and therein having a silicon dopant concentration of not less than 2.2 x 10 18 cm⁻³ and a thickness of at least 200 pm; a step of forming an epitaxially grown layer onto [[the]] said substrate; and a step of processing for thickness reduction a surface of the substrate on the side opposite from that surface of the substrate onto which the epitaxially grown layer is formed.

An epi-wafer comprising: a substrate of the production run in (q) of the q allium nitride crystal q rowth method set forth in claim 8 composed of galliuM nitride crystal and haVing a silin dopant cnentration of not l- than 2.2 1 -and-beig-mechancay tho; and -2- App. No. 12/179,587 Amendment dated Reply to Office action of an epitaxially grown layer formed onto said substrate; the e p i-wafer characterized in bein q mechanically thickness-reduced to a thickness of 100 um.

Claim 7: A gallium nitride crystal growth method as set forth in claim [[6]] 9, wherein the partial pressure of the carrier gas during the gallium nitride crystal growth in (e) is between 0.56 atm and 0.92 atm inclusive.

A method of q rowin q silicon-doped gallium nitride crystal by H V PE, the growth method as set forth in caim 6, further comprising: (a) prep arin q carrier q asses for carryin q q allium nitride precursors and for carryin q a do pinq qas: (b) prep arin q as the do pinq q as a q as containin q do p ant silicon: (c) p assin q the prep ared carrier q asses across a molecular film to purify them so that the carrier q asses have a dew point of not q reater than -60 °C; (d) prep arin q a q allium source and an undersubstrate suitable for q allium nitride q rowth and p lacin q the q allium source and the undersubstrate within an HVPE reactor: (e) via the carrier q asses su pp lyin q, at a predetermined total partial pressure, the q allium nitride precursors into the HVPE reactor, and thereby to the q allium source, and su pp lyin q the do pinq q as into the HVPE reactor, and heatin q the HVPE reactor interior to va p or- p hase ep itaxially q row q allium nitride crystal onto the undersubstrate: (f) q rowin q the q allium nitride crystal to a thickness of at least 200 um: and _(g repeating (a) through (f) a plurality of times to yield a production run of silicon-doped gallium nitride crystals, wherein said total partial p ressure of the carrier q asses is predetermined toq ether with said carrier- q as dew point in such a way as to impart to the q rown q allium nitride crystal a silicon do p ant concentration of not less than 2.2 x 10 18 cm -3 the silicoopantGcncentration of not less -4- App. No. 12/179,587 Amendment dated Reply to Office action of tha n-2-2-x-14-c- imparted to the groWn gallium nitride crystals by carier gas dew point c orrelat inq [[es]] to a crac king frequen c y of not greater than 7% in the production run, given that an occurrence of cracking is taken to be 30 or more crack lines of 100 p m or greater length appearing over the entirety of a 45.8 mm-diameter area of each of the crystals grown in the production run.

A silicon-doped gallium nitride crystal substrate as of the q allium nitride crystal q rowth method set forth in claim [[3]] 4 wherein the gallium nitride crystal has a thickness of at least 4 mm.

Listing of Claims: Claim 1 Claim 2: A gallium nitride crystal growth method as set forth in claim [[1]] 8, wherein the partial pressure of the carrier gas during the gallium nitride crystal growth in (e) is between 0.56 atm and 0.92 atm inclusive.

Claim 4: An epi-wafer manufacturing method, comprising: gallium nitride crystal growth method as set forth in claim [[1]] 8; a step of removing at least the undersubstrate to form a substrate composed of gallium nitride crystal and therein having a silicon dopant concentration of not less than 2.2 x 10 18 cm⁻³ and a thickness of at least 200 pm; a step of forming an epitaxially grown layer onto [[the]] said substrate; and a step of processing for thickness reduction a surface of the substrate on the side opposite from that surface of the substrate onto which the epitaxially grown layer is formed.

An epi-wafer comprising: a substrate of the production run in (q) of the q allium nitride crystal q rowth method set forth in claim 8 composed of galliuM nitride crystal and haVing a silin dopant cnentration of not l- than 2.2 1 -and-beig-mechancay tho; and -2- App. No. 12/179,587 Amendment dated Reply to Office action of an epitaxially grown layer formed onto said substrate; the e p i-wafer characterized in bein q mechanically thickness-reduced to a thickness of 100 um.

Claim 7: A gallium nitride crystal growth method as set forth in claim [[6]] 9, wherein the partial pressure of the carrier gas during the gallium nitride crystal growth in (e) is between 0.56 atm and 0.92 atm inclusive.

A method of q rowin q silicon-doped gallium nitride crystal by H V PE, the growth method as set forth in caim 6, further comprising: (a) prep arin q carrier q asses for carryin q q allium nitride precursors and for carryin q a do pinq qas: (b) prep arin q as the do pinq q as a q as containin q do p ant silicon: (c) p assin q the prep ared carrier q asses across a molecular film to purify them so that the carrier q asses have a dew point of not q reater than -60 °C; (d) prep arin q a q allium source and an undersubstrate suitable for q allium nitride q rowth and p lacin q the q allium source and the undersubstrate within an HVPE reactor: (e) via the carrier q asses su pp lyin q, at a predetermined total partial pressure, the q allium nitride precursors into the HVPE reactor, and thereby to the q allium source, and su pp lyin q the do pinq q as into the HVPE reactor, and heatin q the HVPE reactor interior to va p or- p hase ep itaxially q row q allium nitride crystal onto the undersubstrate: (f) q rowin q the q allium nitride crystal to a thickness of at least 200 um: and _(g repeating (a) through (f) a plurality of times to yield a production run of silicon-doped gallium nitride crystals, wherein said total partial p ressure of the carrier q asses is predetermined toq ether with said carrier- q as dew point in such a way as to impart to the q rown q allium nitride crystal a silicon do p ant concentration of not less than 2.2 x 10 18 cm -3 the silicoopantGcncentration of not less -4- App. No. 12/179,587 Amendment dated Reply to Office action of tha n-2-2-x-14-c- imparted to the groWn gallium nitride crystals by carier gas dew point c orrelat inq [[es]] to a crac king frequen c y of not greater than 7% in the production run, given that an occurrence of cracking is taken to be 30 or more crack lines of 100 p m or greater length appearing over the entirety of a 45.8 mm-diameter area of each of the crystals grown in the production run.

A silicon-doped gallium nitride crystal substrate as of the q allium nitride crystal q rowth method set forth in claim [[3]] 4 wherein the gallium nitride crystal has a thickness of at least 4 mm.

Listing of Claims: Claim 1 Claim 2: A gallium nitride crystal growth method as set forth in claim [[1]] 8, wherein the partial pressure of the carrier gas during the gallium nitride crystal growth in (e) is between 0.56 atm and 0.92 atm inclusive.

Claim 4: An epi-wafer manufacturing method, comprising: gallium nitride crystal growth method as set forth in claim [[1]] 8; a step of removing at least the undersubstrate to form a substrate composed of gallium nitride crystal and therein having a silicon dopant concentration of not less than 2.2 x 10 18 cm⁻³ and a thickness of at least 200 pm; a step of forming an epitaxially grown layer onto [[the]] said substrate; and a step of processing for thickness reduction a surface of the substrate on the side opposite from that surface of the substrate onto which the epitaxially grown layer is formed.

An epi-wafer comprising: a substrate of the production run in (q) of the q allium nitride crystal q rowth method set forth in claim 8 composed of galliuM nitride crystal and haVing a silin dopant cnentration of not l- than 2.2 1 -and-beig-mechancay tho; and -2- App. No. 12/179,587 Amendment dated Reply to Office action of an epitaxially grown layer formed onto said substrate; the e p i-wafer characterized in bein q mechanically thickness-reduced to a thickness of 100 um.

Claim 7: A gallium nitride crystal growth method as set forth in claim [[6]] 9, wherein the partial pressure of the carrier gas during the gallium nitride crystal growth in (e) is between 0.56 atm and 0.92 atm inclusive.

A method of q rowin q silicon-doped gallium nitride crystal by H V PE, the growth method as set forth in caim 6, further comprising: (a) prep arin q carrier q asses for carryin q q allium nitride precursors and for carryin q a do pinq qas: (b) prep arin q as the do pinq q as a q as containin q do p ant silicon: (c) p assin q the prep ared carrier q asses across a molecular film to purify them so that the carrier q asses have a dew point of not q reater than -60 °C; (d) prep arin q a q allium source and an undersubstrate suitable for q allium nitride q rowth and p lacin q the q allium source and the undersubstrate within an HVPE reactor: (e) via the carrier q asses su pp lyin q, at a predetermined total partial pressure, the q allium nitride precursors into the HVPE reactor, and thereby to the q allium source, and su pp lyin q the do pinq q as into the HVPE reactor, and heatin q the HVPE reactor interior to va p or- p hase ep itaxially q row q allium nitride crystal onto the undersubstrate: (f) q rowin q the q allium nitride crystal to a thickness of at least 200 um: and _(g repeating (a) through (f) a plurality of times to yield a production run of silicon-doped gallium nitride crystals, wherein said total partial p ressure of the carrier q asses is predetermined toq ether with said carrier- q as dew point in such a way as to impart to the q rown q allium nitride crystal a silicon do p ant concentration of not less than 2.2 x 10 18 cm -3 the silicoopantGcncentration of not less -4- App. No. 12/179,587 Amendment dated Reply to Office action of tha n-2-2-x-14-c- imparted to the groWn gallium nitride crystals by carier gas dew point c orrelat inq [[es]] to a crac king frequen c y of not greater than 7% in the production run, given that an occurrence of cracking is taken to be 30 or more crack lines of 100 p m or greater length appearing over the entirety of a 45.8 mm-diameter area of each of the crystals grown in the production run.

A silicon-doped gallium nitride crystal substrate as of the q allium nitride crystal q rowth method set forth in claim [[3]] 4 wherein the gallium nitride crystal has a thickness of at least 4 mm.

Listing of Claims: Claim 1 Claim 2: A gallium nitride crystal growth method as set forth in claim [[1]] 8, wherein the partial pressure of the carrier gas during the gallium nitride crystal growth in (e) is between 0.56 atm and 0.92 atm inclusive.

Claim 4: An epi-wafer manufacturing method, comprising: gallium nitride crystal growth method as set forth in claim [[1]] 8; a step of removing at least the undersubstrate to form a substrate composed of gallium nitride crystal and therein having a silicon dopant concentration of not less than 2.2 x 10 18 cm⁻³ and a thickness of at least 200 pm; a step of forming an epitaxially grown layer onto [[the]] said substrate; and a step of processing for thickness reduction a surface of the substrate on the side opposite from that surface of the substrate onto which the epitaxially grown layer is formed.

An epi-wafer comprising: a substrate of the production run in (q) of the q allium nitride crystal q rowth method set forth in claim 8 composed of galliuM nitride crystal and haVing a silin dopant cnentration of not l- than 2.2 1 -and-beig-mechancay tho; and -2- App. No. 12/179,587 Amendment dated Reply to Office action of an epitaxially grown layer formed onto said substrate; the e p i-wafer characterized in bein q mechanically thickness-reduced to a thickness of 100 um.

Claim 7: A gallium nitride crystal growth method as set forth in claim [[6]] 9, wherein the partial pressure of the carrier gas during the gallium nitride crystal growth in (e) is between 0.56 atm and 0.92 atm inclusive.

A method of q rowin q silicon-doped gallium nitride crystal by H V PE, the growth method as set forth in caim 6, further comprising: (a) prep arin q carrier q asses for carryin q q allium nitride precursors and for carryin q a do pinq qas: (b) prep arin q as the do pinq q as a q as containin q do p ant silicon: (c) p assin q the prep ared carrier q asses across a molecular film to purify them so that the carrier q asses have a dew point of not q reater than -60 °C; (d) prep arin q a q allium source and an undersubstrate suitable for q allium nitride q rowth and p lacin q the q allium source and the undersubstrate within an HVPE reactor: (e) via the carrier q asses su pp lyin q, at a predetermined total partial pressure, the q allium nitride precursors into the HVPE reactor, and thereby to the q allium source, and su pp lyin q the do pinq q as into the HVPE reactor, and heatin q the HVPE reactor interior to va p or- p hase ep itaxially q row q allium nitride crystal onto the undersubstrate: (f) q rowin q the q allium nitride crystal to a thickness of at least 200 um: and _(g repeating (a) through (f) a plurality of times to yield a production run of silicon-doped gallium nitride crystals, wherein said total partial p ressure of the carrier q asses is predetermined toq ether with said carrier- q as dew point in such a way as to impart to the q rown q allium nitride crystal a silicon do p ant concentration of not less than 2.2 x 10 18 cm -3 the silicoopantGcncentration of not less -4- App. No. 12/179,587 Amendment dated Reply to Office action of tha n-2-2-x-14-c- imparted to the groWn gallium nitride crystals by carier gas dew point c orrelat inq [[es]] to a crac king frequen c y of not greater than 7% in the production run, given that an occurrence of cracking is taken to be 30 or more crack lines of 100 p m or greater length appearing over the entirety of a 45.8 mm-diameter area of each of the crystals grown in the production run.

A silicon-doped gallium nitride crystal substrate as of the q allium nitride crystal q rowth method set forth in claim [[3]] 4 wherein the gallium nitride crystal has a thickness of at least 4 mm.