Patent
HIGH TEMPERATURE TRANSDUCER USING SOI, SILICON CARBIDE, OR GALLIUM NITRIDE ELECTRONICS
Anthony D. Kurtz
Kulite Semiconductor Products, Inc.
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of a high temperature transducer using SOI, silicon carbide, or gallium nitride sensor components and SOI, silicon carbide, or …
FIG. 2 is a block diagram depicting the memory shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 9. Canceled
Canceled
A high temperature pressure sensing system, comprising: a Wheatstone bridge configured to output a sensed pressure signal indicative of a sensed pressure condition; a span resistor coupled in series with the Wheatstone bridge and configured to output an analog sensed temperature signal indicative of a sensed temperature condition; a first analog to digital converter configured to: receive the analog sensed temperature signal; convert the analog sensed temperature signal [], to a digital signal; and output the digital signal; and a microprocessor configured to: r ece i ve the digital signal; receive a signal corresponding to the sensed pressure signal; perform calculations to compensate, for temperature effects, the signal corresponding to the sensed pressure signal; and produce a digital output indicative of a compensated sensed pressure condition. Currently amended
The high temperature pressure sensing system of Claim 10, wherein the Wheatstone bridge is fabricated using a silicon carbide material. Original
The high temperature pressure sensing system of Claim 10, wherein the Wheatstone bridge is fabricated using a gallium nitride material. Original
The high temperature pressure sensing system of Claim 10, further comprising memory coupled to the microprocessor and operative to provide at least a portion of a control program for the microprocessor. Original
The high temperature pressure sensing system of Claim 10, wherein the pressure sensing system is adapted to operate in environments having temperatures ranging from about 175 ° C to about 300 °C. Original
The high temperature pressure sensing system of Claim 10, wherein the pressure sensing system is adapted to operate in environments exceeding 300 °C. Original
The high temperature pressure sensing system of Claim 10, further comprising an amplifier configured to: receive the sensed pressure signal indicative of a sensed pressure condition; and output an amplified sensed pressure signal. Original
The high temperature pressure sensing system of Claim 10, wherein at least one of the span resistor, first analog to digital converter, and microprocessor are made from a high temperature compatible material. Original
Layer stacks claimed or described, ordered top of device to substrate.
high temperature pressure sensing system
No layer stack recorded.
Materials described outside the worked examples.
silicon carbide
SiC
gallium nitride
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 175–300 °C | — |
Temperature | ≥ 300 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of a high temperature transducer using SOI, silicon carbide, or gallium nitride sensor components and SOI, silicon carbide, or …
FIG. 2 is a block diagram depicting the memory shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 9. Canceled
Canceled
A high temperature pressure sensing system, comprising: a Wheatstone bridge configured to output a sensed pressure signal indicative of a sensed pressure condition; a span resistor coupled in series with the Wheatstone bridge and configured to output an analog sensed temperature signal indicative of a sensed temperature condition; a first analog to digital converter configured to: receive the analog sensed temperature signal; convert the analog sensed temperature signal [], to a digital signal; and output the digital signal; and a microprocessor configured to: r ece i ve the digital signal; receive a signal corresponding to the sensed pressure signal; perform calculations to compensate, for temperature effects, the signal corresponding to the sensed pressure signal; and produce a digital output indicative of a compensated sensed pressure condition. Currently amended
The high temperature pressure sensing system of Claim 10, wherein the Wheatstone bridge is fabricated using a silicon carbide material. Original
The high temperature pressure sensing system of Claim 10, wherein the Wheatstone bridge is fabricated using a gallium nitride material. Original
The high temperature pressure sensing system of Claim 10, further comprising memory coupled to the microprocessor and operative to provide at least a portion of a control program for the microprocessor. Original
The high temperature pressure sensing system of Claim 10, wherein the pressure sensing system is adapted to operate in environments having temperatures ranging from about 175 ° C to about 300 °C. Original
The high temperature pressure sensing system of Claim 10, wherein the pressure sensing system is adapted to operate in environments exceeding 300 °C. Original
The high temperature pressure sensing system of Claim 10, further comprising an amplifier configured to: receive the sensed pressure signal indicative of a sensed pressure condition; and output an amplified sensed pressure signal. Original
The high temperature pressure sensing system of Claim 10, wherein at least one of the span resistor, first analog to digital converter, and microprocessor are made from a high temperature compatible material. Original
Layer stacks claimed or described, ordered top of device to substrate.
high temperature pressure sensing system
No layer stack recorded.
Materials described outside the worked examples.
silicon carbide
SiC
gallium nitride
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 175–300 °C | — |
Temperature | ≥ 300 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of a high temperature transducer using SOI, silicon carbide, or gallium nitride sensor components and SOI, silicon carbide, or …
FIG. 2 is a block diagram depicting the memory shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 9. Canceled
Canceled
A high temperature pressure sensing system, comprising: a Wheatstone bridge configured to output a sensed pressure signal indicative of a sensed pressure condition; a span resistor coupled in series with the Wheatstone bridge and configured to output an analog sensed temperature signal indicative of a sensed temperature condition; a first analog to digital converter configured to: receive the analog sensed temperature signal; convert the analog sensed temperature signal [], to a digital signal; and output the digital signal; and a microprocessor configured to: r ece i ve the digital signal; receive a signal corresponding to the sensed pressure signal; perform calculations to compensate, for temperature effects, the signal corresponding to the sensed pressure signal; and produce a digital output indicative of a compensated sensed pressure condition. Currently amended
The high temperature pressure sensing system of Claim 10, wherein the Wheatstone bridge is fabricated using a silicon carbide material. Original
The high temperature pressure sensing system of Claim 10, wherein the Wheatstone bridge is fabricated using a gallium nitride material. Original
The high temperature pressure sensing system of Claim 10, further comprising memory coupled to the microprocessor and operative to provide at least a portion of a control program for the microprocessor. Original
The high temperature pressure sensing system of Claim 10, wherein the pressure sensing system is adapted to operate in environments having temperatures ranging from about 175 ° C to about 300 °C. Original
The high temperature pressure sensing system of Claim 10, wherein the pressure sensing system is adapted to operate in environments exceeding 300 °C. Original
The high temperature pressure sensing system of Claim 10, further comprising an amplifier configured to: receive the sensed pressure signal indicative of a sensed pressure condition; and output an amplified sensed pressure signal. Original
The high temperature pressure sensing system of Claim 10, wherein at least one of the span resistor, first analog to digital converter, and microprocessor are made from a high temperature compatible material. Original
Layer stacks claimed or described, ordered top of device to substrate.
high temperature pressure sensing system
No layer stack recorded.
Materials described outside the worked examples.
silicon carbide
SiC
gallium nitride
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 175–300 °C | — |
Temperature | ≥ 300 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of a high temperature transducer using SOI, silicon carbide, or gallium nitride sensor components and SOI, silicon carbide, or …
FIG. 2 is a block diagram depicting the memory shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 9. Canceled
Canceled
A high temperature pressure sensing system, comprising: a Wheatstone bridge configured to output a sensed pressure signal indicative of a sensed pressure condition; a span resistor coupled in series with the Wheatstone bridge and configured to output an analog sensed temperature signal indicative of a sensed temperature condition; a first analog to digital converter configured to: receive the analog sensed temperature signal; convert the analog sensed temperature signal [], to a digital signal; and output the digital signal; and a microprocessor configured to: r ece i ve the digital signal; receive a signal corresponding to the sensed pressure signal; perform calculations to compensate, for temperature effects, the signal corresponding to the sensed pressure signal; and produce a digital output indicative of a compensated sensed pressure condition. Currently amended
The high temperature pressure sensing system of Claim 10, wherein the Wheatstone bridge is fabricated using a silicon carbide material. Original
The high temperature pressure sensing system of Claim 10, wherein the Wheatstone bridge is fabricated using a gallium nitride material. Original
The high temperature pressure sensing system of Claim 10, further comprising memory coupled to the microprocessor and operative to provide at least a portion of a control program for the microprocessor. Original
The high temperature pressure sensing system of Claim 10, wherein the pressure sensing system is adapted to operate in environments having temperatures ranging from about 175 ° C to about 300 °C. Original
The high temperature pressure sensing system of Claim 10, wherein the pressure sensing system is adapted to operate in environments exceeding 300 °C. Original
The high temperature pressure sensing system of Claim 10, further comprising an amplifier configured to: receive the sensed pressure signal indicative of a sensed pressure condition; and output an amplified sensed pressure signal. Original
The high temperature pressure sensing system of Claim 10, wherein at least one of the span resistor, first analog to digital converter, and microprocessor are made from a high temperature compatible material. Original
Layer stacks claimed or described, ordered top of device to substrate.
high temperature pressure sensing system
No layer stack recorded.
Materials described outside the worked examples.
silicon carbide
SiC
gallium nitride
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 175–300 °C | — |
Temperature | ≥ 300 °C |
Related documents with shared materials, methods, properties, or citations.
high temperature compatible material
silicon-on-insulator (SOI)
silicon dioxide
SiO₂
| — |
high temperature compatible material
silicon-on-insulator (SOI)
silicon dioxide
SiO₂
| — |
high temperature compatible material
silicon-on-insulator (SOI)
silicon dioxide
SiO₂
| — |
high temperature compatible material
silicon-on-insulator (SOI)
silicon dioxide
SiO₂
| — |