Patent
US 11,078,082GRAPHENE STRUCTURE HAVING NANOBUBBLES AND METHOD OF FABRICATING THE SAME
Jiyeon KU
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,078,082Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a graphene structure having nanobubbles, according to at least one example embodiment; [0020]
FIG. 2 is a photograph of a scanning tunneling microscope (STM) showing a graphene structure having nanobubbles, according to at least one example embodiment; …
FIG. 3 is a graph illustrating a size of nanobubbles in which a single Ar ion is formed; [00 22]
FIG. 4 is a graph showing a differential conductance of nanobubbles; [0023]
FIG. 5 is an STM photograph showing a graphene structure having a plurality of nanobubbles, according to at least one example embodiment; and [00 24]
FIG. 6 is a graph showing sizes of nanobubbles
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 7. Canceled
Canceled
A method of manufacturing a graphene structure, the method comprising: preparing a graphene layer on a substrate; and penetrating noble gas ions through the graphene layer such that the noble gas ions remain between the graphene layer and the substrate forming at least one nanobubble. Previously presented
The method of claim 8, wherein the preparing of the graphene layer comprises: preparing a catalyst substrate; and growing the graphene layer on the substrate by supplying a carbon source gas on the catalyst substrate. Original
The method of claim 8, wherein the preparing of the graphene layer comprises transferring the graphene layer on the substrate. Original
The method of claim 8, wherein the noble gas is Ar gas. Previously presented
The method of claim 8, wherein the penetrating the noble gas ions through the graphene layer comprises sputtering the noble gas ions, and wherein the sputtering forms at least one noble gas ion between the substrate to form the at least one nanobubble. Currently amended
The method of claim 8, wherein each of the at least one nanobubble has a diameter in a range from about 2 nm to about 6 nm, and a height in a range from about 0.15 nm to about 1 nm. Previously presented
The method of claim 8, wherein the penetrating the noble gas ions through the graphene layer comprises: irradiating the noble gas ions via a sputtering method. Previously presented
- 12. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure with nanobubbles
Materials described outside the worked examples.
graphene
C
argon (Ar) gas
Ar
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph illustrating a size of nanobubbles in which a single Ar ion is formed; [00 22]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
nanobubble diameter range | — | C |
nanobubble height range | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,078,082Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a graphene structure having nanobubbles, according to at least one example embodiment; [0020]
FIG. 2 is a photograph of a scanning tunneling microscope (STM) showing a graphene structure having nanobubbles, according to at least one example embodiment; …
FIG. 3 is a graph illustrating a size of nanobubbles in which a single Ar ion is formed; [00 22]
FIG. 4 is a graph showing a differential conductance of nanobubbles; [0023]
FIG. 5 is an STM photograph showing a graphene structure having a plurality of nanobubbles, according to at least one example embodiment; and [00 24]
FIG. 6 is a graph showing sizes of nanobubbles
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 7. Canceled
Canceled
A method of manufacturing a graphene structure, the method comprising: preparing a graphene layer on a substrate; and penetrating noble gas ions through the graphene layer such that the noble gas ions remain between the graphene layer and the substrate forming at least one nanobubble. Previously presented
The method of claim 8, wherein the preparing of the graphene layer comprises: preparing a catalyst substrate; and growing the graphene layer on the substrate by supplying a carbon source gas on the catalyst substrate. Original
The method of claim 8, wherein the preparing of the graphene layer comprises transferring the graphene layer on the substrate. Original
The method of claim 8, wherein the noble gas is Ar gas. Previously presented
The method of claim 8, wherein the penetrating the noble gas ions through the graphene layer comprises sputtering the noble gas ions, and wherein the sputtering forms at least one noble gas ion between the substrate to form the at least one nanobubble. Currently amended
The method of claim 8, wherein each of the at least one nanobubble has a diameter in a range from about 2 nm to about 6 nm, and a height in a range from about 0.15 nm to about 1 nm. Previously presented
The method of claim 8, wherein the penetrating the noble gas ions through the graphene layer comprises: irradiating the noble gas ions via a sputtering method. Previously presented
- 12. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure with nanobubbles
Materials described outside the worked examples.
graphene
C
argon (Ar) gas
Ar
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph illustrating a size of nanobubbles in which a single Ar ion is formed; [00 22]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
nanobubble diameter range | — | C |
nanobubble height range | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,078,082Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a graphene structure having nanobubbles, according to at least one example embodiment; [0020]
FIG. 2 is a photograph of a scanning tunneling microscope (STM) showing a graphene structure having nanobubbles, according to at least one example embodiment; …
FIG. 3 is a graph illustrating a size of nanobubbles in which a single Ar ion is formed; [00 22]
FIG. 4 is a graph showing a differential conductance of nanobubbles; [0023]
FIG. 5 is an STM photograph showing a graphene structure having a plurality of nanobubbles, according to at least one example embodiment; and [00 24]
FIG. 6 is a graph showing sizes of nanobubbles
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 7. Canceled
Canceled
A method of manufacturing a graphene structure, the method comprising: preparing a graphene layer on a substrate; and penetrating noble gas ions through the graphene layer such that the noble gas ions remain between the graphene layer and the substrate forming at least one nanobubble. Previously presented
The method of claim 8, wherein the preparing of the graphene layer comprises: preparing a catalyst substrate; and growing the graphene layer on the substrate by supplying a carbon source gas on the catalyst substrate. Original
The method of claim 8, wherein the preparing of the graphene layer comprises transferring the graphene layer on the substrate. Original
The method of claim 8, wherein the noble gas is Ar gas. Previously presented
The method of claim 8, wherein the penetrating the noble gas ions through the graphene layer comprises sputtering the noble gas ions, and wherein the sputtering forms at least one noble gas ion between the substrate to form the at least one nanobubble. Currently amended
The method of claim 8, wherein each of the at least one nanobubble has a diameter in a range from about 2 nm to about 6 nm, and a height in a range from about 0.15 nm to about 1 nm. Previously presented
The method of claim 8, wherein the penetrating the noble gas ions through the graphene layer comprises: irradiating the noble gas ions via a sputtering method. Previously presented
- 12. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure with nanobubbles
Materials described outside the worked examples.
graphene
C
argon (Ar) gas
Ar
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph illustrating a size of nanobubbles in which a single Ar ion is formed; [00 22]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
nanobubble diameter range | — | C |
nanobubble height range | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,078,082Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a graphene structure having nanobubbles, according to at least one example embodiment; [0020]
FIG. 2 is a photograph of a scanning tunneling microscope (STM) showing a graphene structure having nanobubbles, according to at least one example embodiment; …
FIG. 3 is a graph illustrating a size of nanobubbles in which a single Ar ion is formed; [00 22]
FIG. 4 is a graph showing a differential conductance of nanobubbles; [0023]
FIG. 5 is an STM photograph showing a graphene structure having a plurality of nanobubbles, according to at least one example embodiment; and [00 24]
FIG. 6 is a graph showing sizes of nanobubbles
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 7. Canceled
Canceled
A method of manufacturing a graphene structure, the method comprising: preparing a graphene layer on a substrate; and penetrating noble gas ions through the graphene layer such that the noble gas ions remain between the graphene layer and the substrate forming at least one nanobubble. Previously presented
The method of claim 8, wherein the preparing of the graphene layer comprises: preparing a catalyst substrate; and growing the graphene layer on the substrate by supplying a carbon source gas on the catalyst substrate. Original
The method of claim 8, wherein the preparing of the graphene layer comprises transferring the graphene layer on the substrate. Original
The method of claim 8, wherein the noble gas is Ar gas. Previously presented
The method of claim 8, wherein the penetrating the noble gas ions through the graphene layer comprises sputtering the noble gas ions, and wherein the sputtering forms at least one noble gas ion between the substrate to form the at least one nanobubble. Currently amended
The method of claim 8, wherein each of the at least one nanobubble has a diameter in a range from about 2 nm to about 6 nm, and a height in a range from about 0.15 nm to about 1 nm. Previously presented
The method of claim 8, wherein the penetrating the noble gas ions through the graphene layer comprises: irradiating the noble gas ions via a sputtering method. Previously presented
- 12. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure with nanobubbles
Materials described outside the worked examples.
graphene
C
argon (Ar) gas
Ar
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph illustrating a size of nanobubbles in which a single Ar ion is formed; [00 22]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
nanobubble diameter range | — | C |
nanobubble height range | — |
Related documents with shared materials, methods, properties, or citations.
noble gas
catalyst substrate
Pt substrate with (111) surface
Pt
carbon source gas
helium (He) ion gas
He
neon (Ne) ion gas
Ne
krypton (Kr) ion gas
Kr
xenon (Xe) ion gas
Xe
radon (Rn) ion gas
Rn
FIG. 4 is a graph showing a differential conductance of nanobubbles; [0023]
FIG. 4 is a graph showing a differential conductance of nanobubbles; [0023]
FIG. 6 is a graph showing sizes of nanobubbles
Thickness | 2–6 nm | — |
Thickness | 0.15–1 nm | — |
noble gas
catalyst substrate
Pt substrate with (111) surface
Pt
carbon source gas
helium (He) ion gas
He
neon (Ne) ion gas
Ne
krypton (Kr) ion gas
Kr
xenon (Xe) ion gas
Xe
radon (Rn) ion gas
Rn
FIG. 4 is a graph showing a differential conductance of nanobubbles; [0023]
FIG. 4 is a graph showing a differential conductance of nanobubbles; [0023]
FIG. 6 is a graph showing sizes of nanobubbles
Thickness | 2–6 nm | — |
Thickness | 0.15–1 nm | — |
noble gas
catalyst substrate
Pt substrate with (111) surface
Pt
carbon source gas
helium (He) ion gas
He
neon (Ne) ion gas
Ne
krypton (Kr) ion gas
Kr
xenon (Xe) ion gas
Xe
radon (Rn) ion gas
Rn
FIG. 4 is a graph showing a differential conductance of nanobubbles; [0023]
FIG. 4 is a graph showing a differential conductance of nanobubbles; [0023]
FIG. 6 is a graph showing sizes of nanobubbles
Thickness | 2–6 nm | — |
Thickness | 0.15–1 nm | — |
noble gas
catalyst substrate
Pt substrate with (111) surface
Pt
carbon source gas
helium (He) ion gas
He
neon (Ne) ion gas
Ne
krypton (Kr) ion gas
Kr
xenon (Xe) ion gas
Xe
radon (Rn) ion gas
Rn
FIG. 4 is a graph showing a differential conductance of nanobubbles; [0023]
FIG. 4 is a graph showing a differential conductance of nanobubbles; [0023]
FIG. 6 is a graph showing sizes of nanobubbles
Thickness | 2–6 nm | — |
Thickness | 0.15–1 nm | — |