Patent
Atlas literature
Patent
US 10,591,554Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 in accordance with the present embodiment, as a function of an external magnetic field with various carrier density n and charge mobility p. [00012]
FIG. 2 depicts graphs of theoretically simulated magnetoresistance behavior of the graphene based magnetoresistance sensor in
FIG. 3 (c) depicts a resistance graph of the sensor having a Boron nitride substrate as a function of the back gate voltage at a temperature of 400 K at no …
FIG. 4 depicts graphs of magnetoresistance of (a) a 5-layer graphene sample and (b) a 5 to 6-layer graphene sample on SiO 2 substrates as a function of …
FIG. 5 (a) depicts magnetoresistance graphs of a 4-layer graphene structure sample on a Boron nitride substrate as a function of the external magnetic field at …
FIG. 6 (b) depicts graphs of magnetoresistance as a function of the external magnetic field at top gate voltages -4- WO 2015/099614 PCT/SG₂₀₁₄/000619 from -1.6 …
FIG. 7 (c) depicts magnetoresistance graphs as a function of the external magnetic field at temperatures of from 50 K to 400 K obtained by a no n -local …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene structure comprising: a substrate layer; and at least two graphene layers disposed on the substrate layer, wherein each graphene layer consists of a single layer of carbon atoms arranged in a honey-comb fashion, the at least two graphene layers having gate electrodes fabricated thereon and comprising a gate voltage tuned graphene layer and an effective graphene layer, the effective graphene layer comprising one or more graphene layers, wherein each layer of the graphene structure has a three dimensional (3 D) carrier density and a charge mobility; wherein the charge mobility of the gate voltage tuned graphene layer is higher than the charge mobility of the effective graphene layer; wherein a magnetoresistance ratio of the graphene structure is determined by a difference in the charge mobility or the carrier density between the gate voltage tuned graphene layer and the effective graphene layer, and wherein the charge mobility or the carrier density of the gate voltage tuned layer is tunable by a gate voltage applied to the graphene structure through the gate electrodes, and wherein the gate electrodes are in contact with the gate voltage tuned graphene layer; and wherein a largest magnetoresistance ratio is obtained when the gate voltage of the graphene structure is at a charge neutrality point (CNP), and wherein equal number of electrons and holes exist at the charge neutrality point. Previously presented
The graphene structure of claim 1, wherein the number of the graphene layers is 2 to 6. Original
The graphene structure of claim 1, wherein the graphene structure is arranged such that a magnetic field is applied perpendicular to a plane of the graphene layers in use. Previously presented
The graphene structure of claim 1, wherein the gate voltage tuned graphene layer is below the effective graphene layer. Previously presented
The graphene structure of claim 1, wherein the gate voltage tuned graphene layer is on top of the effective graphene layer. Previously presented
The graphene structure of claim 1, wherein the magnetoresistance ratio is temperature independent. Previously presented
Canceled
A magnetic field sensor comprising: a graphene structure on a base layer; a substrate layer; and a plurality of electrodes positioned in parallel on top of the graphene structure and in contact with a top layer of graphene, wherein the graphene structure lies between the electrodes and the base layer; wherein the graphene structure comprises: at least two graphene layers disposed on the substrate layer, wherein each graphene consists of a single layer of carbon atoms arranged in a honey-comb fashion, the at least two graphene layers having gate electrodes fabricated thereon and comprising a gate voltage tuned graphene layer and an effective graphene layer, the effective graphene layer comprising one or more graphene layers, wherein each layer of the graphene structure has a three dimensional (3 D) carrier density and a charge mobility; Patent Application No. 15/107,628 Atty. Docket No.: MAR₂-PAU 0 9NS wherein the charge mobility of the gate voltage tuned graphene layer is higher than the charge mobility of the effective graphene layer; wherein the charge mobility or the carrier density of the gate voltage tuned layer is tunable by a gate voltage applied to the graphene structure through the gate electrodes, and wherein the gate electrodes are in contact with the gate voltage tuned graphene layer; wherein a magnetoresistance ratio of the graphene structure is determined by a difference in the charge mobility or the carrier density between the gate voltage tuned graphene layer and the effective graphene layer; and wherein a largest magnetoresistance ratio is obtained when the gate voltage of the graphene structure is at a charge neutrality point (CNP), wherein equal number of electrons and holes exist at the charge neutrality point. Currently amended
The magnetic field sensor of claim 8, wherein the number of the graphene layers is 2 to 6. Original
The magnetic field sensor of claim 8, wherein the magnetic field sensor is arranged such that a magnetic field is applied perpendicular to a plane of the graphene layers in use. Previously presented
The magnetic field sensor of claim 8, wherein the gate voltage tuned graphene layer is below the effective graphene layer. Previously presented
The magnetic field sensor of claim 8, wherein the gate voltage tuned graphene layer is on top of the effective graphene layer. Previously presented
The magnetic field sensor of claim 8, wherein the magnetoresistance ratio is temperature independent. Previously presented
The magnetic field sensor of claim 8, wherein the substrate layer is Boron nitride. Previously presented
The magnetic field sensor of claim 8, wherein the at least two graphene layers and the substrate layer constitutes a thin film, the thin film further comprising: the base layer below the substrate layer. Previously presented
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene magnetoresistance structure
graphene-based magnetic field sensor
Materials described outside the worked examples.
multilayer graphene
substrate layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 in accordance with the present embodiment, as a function of an external magnetic field with various carrier density n and charge mobility p. [00012]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 25–25 V | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,591,554Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 in accordance with the present embodiment, as a function of an external magnetic field with various carrier density n and charge mobility p. [00012]
FIG. 2 depicts graphs of theoretically simulated magnetoresistance behavior of the graphene based magnetoresistance sensor in
FIG. 3 (c) depicts a resistance graph of the sensor having a Boron nitride substrate as a function of the back gate voltage at a temperature of 400 K at no …
FIG. 4 depicts graphs of magnetoresistance of (a) a 5-layer graphene sample and (b) a 5 to 6-layer graphene sample on SiO 2 substrates as a function of …
FIG. 5 (a) depicts magnetoresistance graphs of a 4-layer graphene structure sample on a Boron nitride substrate as a function of the external magnetic field at …
FIG. 6 (b) depicts graphs of magnetoresistance as a function of the external magnetic field at top gate voltages -4- WO 2015/099614 PCT/SG₂₀₁₄/000619 from -1.6 …
FIG. 7 (c) depicts magnetoresistance graphs as a function of the external magnetic field at temperatures of from 50 K to 400 K obtained by a no n -local …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene structure comprising: a substrate layer; and at least two graphene layers disposed on the substrate layer, wherein each graphene layer consists of a single layer of carbon atoms arranged in a honey-comb fashion, the at least two graphene layers having gate electrodes fabricated thereon and comprising a gate voltage tuned graphene layer and an effective graphene layer, the effective graphene layer comprising one or more graphene layers, wherein each layer of the graphene structure has a three dimensional (3 D) carrier density and a charge mobility; wherein the charge mobility of the gate voltage tuned graphene layer is higher than the charge mobility of the effective graphene layer; wherein a magnetoresistance ratio of the graphene structure is determined by a difference in the charge mobility or the carrier density between the gate voltage tuned graphene layer and the effective graphene layer, and wherein the charge mobility or the carrier density of the gate voltage tuned layer is tunable by a gate voltage applied to the graphene structure through the gate electrodes, and wherein the gate electrodes are in contact with the gate voltage tuned graphene layer; and wherein a largest magnetoresistance ratio is obtained when the gate voltage of the graphene structure is at a charge neutrality point (CNP), and wherein equal number of electrons and holes exist at the charge neutrality point. Previously presented
The graphene structure of claim 1, wherein the number of the graphene layers is 2 to 6. Original
The graphene structure of claim 1, wherein the graphene structure is arranged such that a magnetic field is applied perpendicular to a plane of the graphene layers in use. Previously presented
The graphene structure of claim 1, wherein the gate voltage tuned graphene layer is below the effective graphene layer. Previously presented
The graphene structure of claim 1, wherein the gate voltage tuned graphene layer is on top of the effective graphene layer. Previously presented
The graphene structure of claim 1, wherein the magnetoresistance ratio is temperature independent. Previously presented
Canceled
A magnetic field sensor comprising: a graphene structure on a base layer; a substrate layer; and a plurality of electrodes positioned in parallel on top of the graphene structure and in contact with a top layer of graphene, wherein the graphene structure lies between the electrodes and the base layer; wherein the graphene structure comprises: at least two graphene layers disposed on the substrate layer, wherein each graphene consists of a single layer of carbon atoms arranged in a honey-comb fashion, the at least two graphene layers having gate electrodes fabricated thereon and comprising a gate voltage tuned graphene layer and an effective graphene layer, the effective graphene layer comprising one or more graphene layers, wherein each layer of the graphene structure has a three dimensional (3 D) carrier density and a charge mobility; Patent Application No. 15/107,628 Atty. Docket No.: MAR₂-PAU 0 9NS wherein the charge mobility of the gate voltage tuned graphene layer is higher than the charge mobility of the effective graphene layer; wherein the charge mobility or the carrier density of the gate voltage tuned layer is tunable by a gate voltage applied to the graphene structure through the gate electrodes, and wherein the gate electrodes are in contact with the gate voltage tuned graphene layer; wherein a magnetoresistance ratio of the graphene structure is determined by a difference in the charge mobility or the carrier density between the gate voltage tuned graphene layer and the effective graphene layer; and wherein a largest magnetoresistance ratio is obtained when the gate voltage of the graphene structure is at a charge neutrality point (CNP), wherein equal number of electrons and holes exist at the charge neutrality point. Currently amended
The magnetic field sensor of claim 8, wherein the number of the graphene layers is 2 to 6. Original
The magnetic field sensor of claim 8, wherein the magnetic field sensor is arranged such that a magnetic field is applied perpendicular to a plane of the graphene layers in use. Previously presented
The magnetic field sensor of claim 8, wherein the gate voltage tuned graphene layer is below the effective graphene layer. Previously presented
The magnetic field sensor of claim 8, wherein the gate voltage tuned graphene layer is on top of the effective graphene layer. Previously presented
The magnetic field sensor of claim 8, wherein the magnetoresistance ratio is temperature independent. Previously presented
The magnetic field sensor of claim 8, wherein the substrate layer is Boron nitride. Previously presented
The magnetic field sensor of claim 8, wherein the at least two graphene layers and the substrate layer constitutes a thin film, the thin film further comprising: the base layer below the substrate layer. Previously presented
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene magnetoresistance structure
graphene-based magnetic field sensor
Materials described outside the worked examples.
multilayer graphene
substrate layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 in accordance with the present embodiment, as a function of an external magnetic field with various carrier density n and charge mobility p. [00012]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 25–25 V | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,591,554Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 in accordance with the present embodiment, as a function of an external magnetic field with various carrier density n and charge mobility p. [00012]
FIG. 2 depicts graphs of theoretically simulated magnetoresistance behavior of the graphene based magnetoresistance sensor in
FIG. 3 (c) depicts a resistance graph of the sensor having a Boron nitride substrate as a function of the back gate voltage at a temperature of 400 K at no …
FIG. 4 depicts graphs of magnetoresistance of (a) a 5-layer graphene sample and (b) a 5 to 6-layer graphene sample on SiO 2 substrates as a function of …
FIG. 5 (a) depicts magnetoresistance graphs of a 4-layer graphene structure sample on a Boron nitride substrate as a function of the external magnetic field at …
FIG. 6 (b) depicts graphs of magnetoresistance as a function of the external magnetic field at top gate voltages -4- WO 2015/099614 PCT/SG₂₀₁₄/000619 from -1.6 …
FIG. 7 (c) depicts magnetoresistance graphs as a function of the external magnetic field at temperatures of from 50 K to 400 K obtained by a no n -local …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene structure comprising: a substrate layer; and at least two graphene layers disposed on the substrate layer, wherein each graphene layer consists of a single layer of carbon atoms arranged in a honey-comb fashion, the at least two graphene layers having gate electrodes fabricated thereon and comprising a gate voltage tuned graphene layer and an effective graphene layer, the effective graphene layer comprising one or more graphene layers, wherein each layer of the graphene structure has a three dimensional (3 D) carrier density and a charge mobility; wherein the charge mobility of the gate voltage tuned graphene layer is higher than the charge mobility of the effective graphene layer; wherein a magnetoresistance ratio of the graphene structure is determined by a difference in the charge mobility or the carrier density between the gate voltage tuned graphene layer and the effective graphene layer, and wherein the charge mobility or the carrier density of the gate voltage tuned layer is tunable by a gate voltage applied to the graphene structure through the gate electrodes, and wherein the gate electrodes are in contact with the gate voltage tuned graphene layer; and wherein a largest magnetoresistance ratio is obtained when the gate voltage of the graphene structure is at a charge neutrality point (CNP), and wherein equal number of electrons and holes exist at the charge neutrality point. Previously presented
The graphene structure of claim 1, wherein the number of the graphene layers is 2 to 6. Original
The graphene structure of claim 1, wherein the graphene structure is arranged such that a magnetic field is applied perpendicular to a plane of the graphene layers in use. Previously presented
The graphene structure of claim 1, wherein the gate voltage tuned graphene layer is below the effective graphene layer. Previously presented
The graphene structure of claim 1, wherein the gate voltage tuned graphene layer is on top of the effective graphene layer. Previously presented
The graphene structure of claim 1, wherein the magnetoresistance ratio is temperature independent. Previously presented
Canceled
A magnetic field sensor comprising: a graphene structure on a base layer; a substrate layer; and a plurality of electrodes positioned in parallel on top of the graphene structure and in contact with a top layer of graphene, wherein the graphene structure lies between the electrodes and the base layer; wherein the graphene structure comprises: at least two graphene layers disposed on the substrate layer, wherein each graphene consists of a single layer of carbon atoms arranged in a honey-comb fashion, the at least two graphene layers having gate electrodes fabricated thereon and comprising a gate voltage tuned graphene layer and an effective graphene layer, the effective graphene layer comprising one or more graphene layers, wherein each layer of the graphene structure has a three dimensional (3 D) carrier density and a charge mobility; Patent Application No. 15/107,628 Atty. Docket No.: MAR₂-PAU 0 9NS wherein the charge mobility of the gate voltage tuned graphene layer is higher than the charge mobility of the effective graphene layer; wherein the charge mobility or the carrier density of the gate voltage tuned layer is tunable by a gate voltage applied to the graphene structure through the gate electrodes, and wherein the gate electrodes are in contact with the gate voltage tuned graphene layer; wherein a magnetoresistance ratio of the graphene structure is determined by a difference in the charge mobility or the carrier density between the gate voltage tuned graphene layer and the effective graphene layer; and wherein a largest magnetoresistance ratio is obtained when the gate voltage of the graphene structure is at a charge neutrality point (CNP), wherein equal number of electrons and holes exist at the charge neutrality point. Currently amended
The magnetic field sensor of claim 8, wherein the number of the graphene layers is 2 to 6. Original
The magnetic field sensor of claim 8, wherein the magnetic field sensor is arranged such that a magnetic field is applied perpendicular to a plane of the graphene layers in use. Previously presented
The magnetic field sensor of claim 8, wherein the gate voltage tuned graphene layer is below the effective graphene layer. Previously presented
The magnetic field sensor of claim 8, wherein the gate voltage tuned graphene layer is on top of the effective graphene layer. Previously presented
The magnetic field sensor of claim 8, wherein the magnetoresistance ratio is temperature independent. Previously presented
The magnetic field sensor of claim 8, wherein the substrate layer is Boron nitride. Previously presented
The magnetic field sensor of claim 8, wherein the at least two graphene layers and the substrate layer constitutes a thin film, the thin film further comprising: the base layer below the substrate layer. Previously presented
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene magnetoresistance structure
graphene-based magnetic field sensor
Materials described outside the worked examples.
multilayer graphene
substrate layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 in accordance with the present embodiment, as a function of an external magnetic field with various carrier density n and charge mobility p. [00012]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 25–25 V | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,591,554Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 in accordance with the present embodiment, as a function of an external magnetic field with various carrier density n and charge mobility p. [00012]
FIG. 2 depicts graphs of theoretically simulated magnetoresistance behavior of the graphene based magnetoresistance sensor in
FIG. 3 (c) depicts a resistance graph of the sensor having a Boron nitride substrate as a function of the back gate voltage at a temperature of 400 K at no …
FIG. 4 depicts graphs of magnetoresistance of (a) a 5-layer graphene sample and (b) a 5 to 6-layer graphene sample on SiO 2 substrates as a function of …
FIG. 5 (a) depicts magnetoresistance graphs of a 4-layer graphene structure sample on a Boron nitride substrate as a function of the external magnetic field at …
FIG. 6 (b) depicts graphs of magnetoresistance as a function of the external magnetic field at top gate voltages -4- WO 2015/099614 PCT/SG₂₀₁₄/000619 from -1.6 …
FIG. 7 (c) depicts magnetoresistance graphs as a function of the external magnetic field at temperatures of from 50 K to 400 K obtained by a no n -local …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene structure comprising: a substrate layer; and at least two graphene layers disposed on the substrate layer, wherein each graphene layer consists of a single layer of carbon atoms arranged in a honey-comb fashion, the at least two graphene layers having gate electrodes fabricated thereon and comprising a gate voltage tuned graphene layer and an effective graphene layer, the effective graphene layer comprising one or more graphene layers, wherein each layer of the graphene structure has a three dimensional (3 D) carrier density and a charge mobility; wherein the charge mobility of the gate voltage tuned graphene layer is higher than the charge mobility of the effective graphene layer; wherein a magnetoresistance ratio of the graphene structure is determined by a difference in the charge mobility or the carrier density between the gate voltage tuned graphene layer and the effective graphene layer, and wherein the charge mobility or the carrier density of the gate voltage tuned layer is tunable by a gate voltage applied to the graphene structure through the gate electrodes, and wherein the gate electrodes are in contact with the gate voltage tuned graphene layer; and wherein a largest magnetoresistance ratio is obtained when the gate voltage of the graphene structure is at a charge neutrality point (CNP), and wherein equal number of electrons and holes exist at the charge neutrality point. Previously presented
The graphene structure of claim 1, wherein the number of the graphene layers is 2 to 6. Original
The graphene structure of claim 1, wherein the graphene structure is arranged such that a magnetic field is applied perpendicular to a plane of the graphene layers in use. Previously presented
The graphene structure of claim 1, wherein the gate voltage tuned graphene layer is below the effective graphene layer. Previously presented
The graphene structure of claim 1, wherein the gate voltage tuned graphene layer is on top of the effective graphene layer. Previously presented
The graphene structure of claim 1, wherein the magnetoresistance ratio is temperature independent. Previously presented
Canceled
A magnetic field sensor comprising: a graphene structure on a base layer; a substrate layer; and a plurality of electrodes positioned in parallel on top of the graphene structure and in contact with a top layer of graphene, wherein the graphene structure lies between the electrodes and the base layer; wherein the graphene structure comprises: at least two graphene layers disposed on the substrate layer, wherein each graphene consists of a single layer of carbon atoms arranged in a honey-comb fashion, the at least two graphene layers having gate electrodes fabricated thereon and comprising a gate voltage tuned graphene layer and an effective graphene layer, the effective graphene layer comprising one or more graphene layers, wherein each layer of the graphene structure has a three dimensional (3 D) carrier density and a charge mobility; Patent Application No. 15/107,628 Atty. Docket No.: MAR₂-PAU 0 9NS wherein the charge mobility of the gate voltage tuned graphene layer is higher than the charge mobility of the effective graphene layer; wherein the charge mobility or the carrier density of the gate voltage tuned layer is tunable by a gate voltage applied to the graphene structure through the gate electrodes, and wherein the gate electrodes are in contact with the gate voltage tuned graphene layer; wherein a magnetoresistance ratio of the graphene structure is determined by a difference in the charge mobility or the carrier density between the gate voltage tuned graphene layer and the effective graphene layer; and wherein a largest magnetoresistance ratio is obtained when the gate voltage of the graphene structure is at a charge neutrality point (CNP), wherein equal number of electrons and holes exist at the charge neutrality point. Currently amended
The magnetic field sensor of claim 8, wherein the number of the graphene layers is 2 to 6. Original
The magnetic field sensor of claim 8, wherein the magnetic field sensor is arranged such that a magnetic field is applied perpendicular to a plane of the graphene layers in use. Previously presented
The magnetic field sensor of claim 8, wherein the gate voltage tuned graphene layer is below the effective graphene layer. Previously presented
The magnetic field sensor of claim 8, wherein the gate voltage tuned graphene layer is on top of the effective graphene layer. Previously presented
The magnetic field sensor of claim 8, wherein the magnetoresistance ratio is temperature independent. Previously presented
The magnetic field sensor of claim 8, wherein the substrate layer is Boron nitride. Previously presented
The magnetic field sensor of claim 8, wherein the at least two graphene layers and the substrate layer constitutes a thin film, the thin film further comprising: the base layer below the substrate layer. Previously presented
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene magnetoresistance structure
graphene-based magnetic field sensor
Materials described outside the worked examples.
multilayer graphene
substrate layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 in accordance with the present embodiment, as a function of an external magnetic field with various carrier density n and charge mobility p. [00012]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 25–25 V | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
BN
silicon/silicon oxide substrate
heavily doped Silicon
Kish graphite
FIG. 3 (c) depicts a resistance graph of the sensor having a Boron nitride substrate as a function of the back gate voltage at a temperature of 400 K at no …
FIG. 3 (c) depicts a resistance graph of the sensor having a Boron nitride substrate as a function of the back gate voltage at a temperature of 400 K at no …
FIG. 5 (a) depicts magnetoresistance graphs of a 4-layer graphene structure sample on a Boron nitride substrate as a function of the external magnetic field at …
FIG. 5 (a) depicts magnetoresistance graphs of a 4-layer graphene structure sample on a Boron nitride substrate as a function of the external magnetic field at …
FIG. 6 (b) depicts graphs of magnetoresistance as a function of the external magnetic field at top gate voltages -4- WO 2015/099614 PCT/SG₂₀₁₄/000619 from -1.6 …
FIG. 6 (b) depicts graphs of magnetoresistance as a function of the external magnetic field at top gate voltages -4- WO 2015/099614 PCT/SG₂₀₁₄/000619 from -1.6 …
| — |
Temperature | 300–400 K | — |
Voltage | 1.6–2 V | — |
Voltage | 60–100 V | — |
Temperature | 50–400 K | — |
Temperature | 2–400 K | — |
Voltage | 5–15 V | — |
Temperature | ≥ 10 k | — |
BN
silicon/silicon oxide substrate
heavily doped Silicon
Kish graphite
FIG. 3 (c) depicts a resistance graph of the sensor having a Boron nitride substrate as a function of the back gate voltage at a temperature of 400 K at no …
FIG. 3 (c) depicts a resistance graph of the sensor having a Boron nitride substrate as a function of the back gate voltage at a temperature of 400 K at no …
FIG. 5 (a) depicts magnetoresistance graphs of a 4-layer graphene structure sample on a Boron nitride substrate as a function of the external magnetic field at …
FIG. 5 (a) depicts magnetoresistance graphs of a 4-layer graphene structure sample on a Boron nitride substrate as a function of the external magnetic field at …
FIG. 6 (b) depicts graphs of magnetoresistance as a function of the external magnetic field at top gate voltages -4- WO 2015/099614 PCT/SG₂₀₁₄/000619 from -1.6 …
FIG. 6 (b) depicts graphs of magnetoresistance as a function of the external magnetic field at top gate voltages -4- WO 2015/099614 PCT/SG₂₀₁₄/000619 from -1.6 …
| — |
Temperature | 300–400 K | — |
Voltage | 1.6–2 V | — |
Voltage | 60–100 V | — |
Temperature | 50–400 K | — |
Temperature | 2–400 K | — |
Voltage | 5–15 V | — |
Temperature | ≥ 10 k | — |
BN
silicon/silicon oxide substrate
heavily doped Silicon
Kish graphite
FIG. 3 (c) depicts a resistance graph of the sensor having a Boron nitride substrate as a function of the back gate voltage at a temperature of 400 K at no …
FIG. 3 (c) depicts a resistance graph of the sensor having a Boron nitride substrate as a function of the back gate voltage at a temperature of 400 K at no …
FIG. 5 (a) depicts magnetoresistance graphs of a 4-layer graphene structure sample on a Boron nitride substrate as a function of the external magnetic field at …
FIG. 5 (a) depicts magnetoresistance graphs of a 4-layer graphene structure sample on a Boron nitride substrate as a function of the external magnetic field at …
FIG. 6 (b) depicts graphs of magnetoresistance as a function of the external magnetic field at top gate voltages -4- WO 2015/099614 PCT/SG₂₀₁₄/000619 from -1.6 …
FIG. 6 (b) depicts graphs of magnetoresistance as a function of the external magnetic field at top gate voltages -4- WO 2015/099614 PCT/SG₂₀₁₄/000619 from -1.6 …
| — |
Temperature | 300–400 K | — |
Voltage | 1.6–2 V | — |
Voltage | 60–100 V | — |
Temperature | 50–400 K | — |
Temperature | 2–400 K | — |
Voltage | 5–15 V | — |
Temperature | ≥ 10 k | — |
BN
silicon/silicon oxide substrate
heavily doped Silicon
Kish graphite
FIG. 3 (c) depicts a resistance graph of the sensor having a Boron nitride substrate as a function of the back gate voltage at a temperature of 400 K at no …
FIG. 3 (c) depicts a resistance graph of the sensor having a Boron nitride substrate as a function of the back gate voltage at a temperature of 400 K at no …
FIG. 5 (a) depicts magnetoresistance graphs of a 4-layer graphene structure sample on a Boron nitride substrate as a function of the external magnetic field at …
FIG. 5 (a) depicts magnetoresistance graphs of a 4-layer graphene structure sample on a Boron nitride substrate as a function of the external magnetic field at …
FIG. 6 (b) depicts graphs of magnetoresistance as a function of the external magnetic field at top gate voltages -4- WO 2015/099614 PCT/SG₂₀₁₄/000619 from -1.6 …
FIG. 6 (b) depicts graphs of magnetoresistance as a function of the external magnetic field at top gate voltages -4- WO 2015/099614 PCT/SG₂₀₁₄/000619 from -1.6 …
| — |
Temperature | 300–400 K | — |
Voltage | 1.6–2 V | — |
Voltage | 60–100 V | — |
Temperature | 50–400 K | — |
Temperature | 2–400 K | — |
Voltage | 5–15 V | — |
Temperature | ≥ 10 k | — |
