Patent
US 10,361,275MULTI-DOPED GRAPHENE AND METHOD FOR PREPARING THE SAME
Mynghee JUNG
US
Copyright © 2026 Matter42. All rights reserved.
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1D are graphs showing a rate of decrease in graphene sheet resistance according to the concentration of a doping solution when graphene is doped …
FIG. 2 is a flowchart showing a method for preparing a multi-doped graphene 3 Atty Docket: 2060-5510 according to an embodiment of the present invention.
FIGS. 3A and 3B are conceptual views showing a method for preparing a graphene layer using a chemical vapor deposition method according to an embodiment of the …
FIG. 4 is a graph showing a rate of decrease in sheet resistance of a doped graphene.
FIG. 5 is a graph showing X-ray photoelectron spectroscopy (XPS) results of the doped graphene.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a multi-doped graphene, the method comprising: mixing a metal-based dopant and at least one organic-based dopant to prepare a doping solution; stacking a graphene layer on a substrate; and doping the graphene layer with the doping solution that includes the metal-based dopant and the at least one organic-based dopant, wherein: the doping solution comprises a mixture of the metal-based dopant, a first organic-based dopant, and a second organic-based dopant; the metal-based dopant is AuCl, and a concentration of the metal-based dopant in the doping solution is 1 to 10 mM; the first organic-based dopant is bis(trifluoromethanesulfonyl)imide and a concentration of bis(trifluoromethanesulfonyl)imide in the doping solution is 1 to 100 mM; the second organic-based dopant is zinc di [bis(trifluoromethylsulfonyl)imide l or trifluoromethanesulfonyl chloride and a concentration of zinc di[bis(trifluoromethylsulfonyl)imide l or trifluoromethanesulfonyl chloride in the doping solution is 1 to 200 mM; the prepared multi-doped graphene is not reddened; and a rate of decrease in sheet resistance of the multi-doped graphene is 46% to 60%%. Currently amended
A graphene prepared by the method of claim 1. Original
The method of claim 1, wherein a solvent for the doping solution comprises an organic solvent. New
2-9. Canceled
Canceled
(Withdrawn-Currently Amended) A multi-doped graphene comprising: a substrate; and a graphene layer formed on the substrate and doped with a doping solution comprising a mixture of a metal-based dopant, a first organic-based dopant, and [[an]]a second organic-based dopant 2 wherein: the metal-based dopant is AuC l 3 and a concentration of the metal-based dopant in the doping solution is 1 to 10 mM; the first organic-based dopant is bis(trifluoromethanesulfonyl)imide and a concentration of bis(trifluoromethanesulfonyl)imide in the doping solution is 1 to 100 mM; the second organic-based dopant is zinc di [bis(trifluoromethylsulfonyl)imide l or trifluoromethanesulfonyl chloride and a concentration of zinc di[bis(trifluoromethylsulfonyl)imide l or trifluoromethanesulfonyl chloride in the doping solution is 1 to 200 mM; the multi-doped graphene is not reddened; and a rate of decrease in sheet resistance of the multi-doped graphene is 46% to 60%%. Currently amended
12-15. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
multi-doped graphene on substrate
Materials described outside the worked examples.
AuCl₃
bis(trifluoromethanesulfonyl)imide
zinc di[bis(trifluoromethylsulfonyl)imide]
trifluoromethanesulfonyl chloride
organic solvent
nitromethane
CH₃NO₂
nitrobenzene
C₆H₅NO₂
graphene
HAuCl₄
FeCl₃
bis(trifluoromethane)sulfonimide
silver(I) bis(trifluoromethanesulfonyl)imide
1-(trifluoromethanesulfonyl)imidazole
N-(2-pyridyl)bis(trifluoromethanesulfonimide)
bis(trifluoromethanesulfonyl)methane
N-(5-chloro-2-pyridyl)bis(trifluoromethanesulfonimide)
N-phenyl-bis(trifluoromethanesulfonimide)
methyl trifluoromethanesulfonate
trifluoromethanesulfonic anhydride
trifluoromethanesulfonamide
ethyl trifluoromethanesulfonate
zinc trifluoromethanesulfonate
tetracyanoethylene
C₆N₄
2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane
potassium tetrafluoroborate
KBF₄
ammonium tetrafluoroborate
NH₄BF₄
ammonium hexafluorophosphate
NH₄PF₆
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 A to 1D are graphs showing a rate of decrease in graphene sheet resistance according to the concentration of a doping solution when graphene is doped …
FIG. 4 is a graph showing a rate of decrease in sheet resistance of a doped graphene.
FIG. 4 is a graph showing a rate of decrease in sheet resistance of a doped graphene.
FIG. 5 is a graph showing X-ray photoelectron spectroscopy (XPS) results of the doped graphene.
FIG. 5 is a graph showing X-ray photoelectron spectroscopy (XPS) results of the doped graphene.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
rate of decrease in sheet resistance of multi-doped graphene | — | graphene |
Thickness | 1–10 mM | — |
Thickness | 1–100 mM | — |
Thickness | 1–200 mM | — |
Table 2
SVG 15456421.
p. 7
Related documents with shared materials, methods, properties, or citations.
NITROGEN-DOPED TRANSPARENT GRAPHENE FILM AND MANUFACTURING METHOD THEREOF
METHOD OF FABRICATING GRAPHENE STRUCTURE HAVING NANOBUBBLES
Transparent Electrode Comprising Doped Graphene, Process of Preparing The Same, And Display Device And Solar Cell Comprising The Electrode
METHOD OF TRANSFERRING GRAPHENE
GRAPHENE TRANSISTOR GATED BY CHARGES THROUGH A NANOPORE FOR BIO-MOLECULAR SENSING AND DNA SEQUENCING
GRAPHENE BASED MAGNETORESISTANCE SENSORS
METHOD FOR SYNTHESIZING A GRAPHENE PATTERN
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1D are graphs showing a rate of decrease in graphene sheet resistance according to the concentration of a doping solution when graphene is doped …
FIG. 2 is a flowchart showing a method for preparing a multi-doped graphene 3 Atty Docket: 2060-5510 according to an embodiment of the present invention.
FIGS. 3A and 3B are conceptual views showing a method for preparing a graphene layer using a chemical vapor deposition method according to an embodiment of the …
FIG. 4 is a graph showing a rate of decrease in sheet resistance of a doped graphene.
FIG. 5 is a graph showing X-ray photoelectron spectroscopy (XPS) results of the doped graphene.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a multi-doped graphene, the method comprising: mixing a metal-based dopant and at least one organic-based dopant to prepare a doping solution; stacking a graphene layer on a substrate; and doping the graphene layer with the doping solution that includes the metal-based dopant and the at least one organic-based dopant, wherein: the doping solution comprises a mixture of the metal-based dopant, a first organic-based dopant, and a second organic-based dopant; the metal-based dopant is AuCl, and a concentration of the metal-based dopant in the doping solution is 1 to 10 mM; the first organic-based dopant is bis(trifluoromethanesulfonyl)imide and a concentration of bis(trifluoromethanesulfonyl)imide in the doping solution is 1 to 100 mM; the second organic-based dopant is zinc di [bis(trifluoromethylsulfonyl)imide l or trifluoromethanesulfonyl chloride and a concentration of zinc di[bis(trifluoromethylsulfonyl)imide l or trifluoromethanesulfonyl chloride in the doping solution is 1 to 200 mM; the prepared multi-doped graphene is not reddened; and a rate of decrease in sheet resistance of the multi-doped graphene is 46% to 60%%. Currently amended
A graphene prepared by the method of claim 1. Original
The method of claim 1, wherein a solvent for the doping solution comprises an organic solvent. New
2-9. Canceled
Canceled
(Withdrawn-Currently Amended) A multi-doped graphene comprising: a substrate; and a graphene layer formed on the substrate and doped with a doping solution comprising a mixture of a metal-based dopant, a first organic-based dopant, and [[an]]a second organic-based dopant 2 wherein: the metal-based dopant is AuC l 3 and a concentration of the metal-based dopant in the doping solution is 1 to 10 mM; the first organic-based dopant is bis(trifluoromethanesulfonyl)imide and a concentration of bis(trifluoromethanesulfonyl)imide in the doping solution is 1 to 100 mM; the second organic-based dopant is zinc di [bis(trifluoromethylsulfonyl)imide l or trifluoromethanesulfonyl chloride and a concentration of zinc di[bis(trifluoromethylsulfonyl)imide l or trifluoromethanesulfonyl chloride in the doping solution is 1 to 200 mM; the multi-doped graphene is not reddened; and a rate of decrease in sheet resistance of the multi-doped graphene is 46% to 60%%. Currently amended
12-15. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
multi-doped graphene on substrate
Materials described outside the worked examples.
AuCl₃
bis(trifluoromethanesulfonyl)imide
zinc di[bis(trifluoromethylsulfonyl)imide]
trifluoromethanesulfonyl chloride
organic solvent
nitromethane
CH₃NO₂
nitrobenzene
C₆H₅NO₂
graphene
HAuCl₄
FeCl₃
bis(trifluoromethane)sulfonimide
silver(I) bis(trifluoromethanesulfonyl)imide
1-(trifluoromethanesulfonyl)imidazole
N-(2-pyridyl)bis(trifluoromethanesulfonimide)
bis(trifluoromethanesulfonyl)methane
N-(5-chloro-2-pyridyl)bis(trifluoromethanesulfonimide)
N-phenyl-bis(trifluoromethanesulfonimide)
methyl trifluoromethanesulfonate
trifluoromethanesulfonic anhydride
trifluoromethanesulfonamide
ethyl trifluoromethanesulfonate
zinc trifluoromethanesulfonate
tetracyanoethylene
C₆N₄
2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane
potassium tetrafluoroborate
KBF₄
ammonium tetrafluoroborate
NH₄BF₄
ammonium hexafluorophosphate
NH₄PF₆
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 A to 1D are graphs showing a rate of decrease in graphene sheet resistance according to the concentration of a doping solution when graphene is doped …
FIG. 4 is a graph showing a rate of decrease in sheet resistance of a doped graphene.
FIG. 4 is a graph showing a rate of decrease in sheet resistance of a doped graphene.
FIG. 5 is a graph showing X-ray photoelectron spectroscopy (XPS) results of the doped graphene.
FIG. 5 is a graph showing X-ray photoelectron spectroscopy (XPS) results of the doped graphene.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
rate of decrease in sheet resistance of multi-doped graphene | — | graphene |
Thickness | 1–10 mM | — |
Thickness | 1–100 mM | — |
Thickness | 1–200 mM | — |
Table 2
SVG 15456421.
p. 7
Related documents with shared materials, methods, properties, or citations.
NITROGEN-DOPED TRANSPARENT GRAPHENE FILM AND MANUFACTURING METHOD THEREOF
METHOD OF FABRICATING GRAPHENE STRUCTURE HAVING NANOBUBBLES
Transparent Electrode Comprising Doped Graphene, Process of Preparing The Same, And Display Device And Solar Cell Comprising The Electrode
METHOD OF TRANSFERRING GRAPHENE
GRAPHENE TRANSISTOR GATED BY CHARGES THROUGH A NANOPORE FOR BIO-MOLECULAR SENSING AND DNA SEQUENCING
GRAPHENE BASED MAGNETORESISTANCE SENSORS
METHOD FOR SYNTHESIZING A GRAPHENE PATTERN
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1D are graphs showing a rate of decrease in graphene sheet resistance according to the concentration of a doping solution when graphene is doped …
FIG. 2 is a flowchart showing a method for preparing a multi-doped graphene 3 Atty Docket: 2060-5510 according to an embodiment of the present invention.
FIGS. 3A and 3B are conceptual views showing a method for preparing a graphene layer using a chemical vapor deposition method according to an embodiment of the …
FIG. 4 is a graph showing a rate of decrease in sheet resistance of a doped graphene.
FIG. 5 is a graph showing X-ray photoelectron spectroscopy (XPS) results of the doped graphene.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a multi-doped graphene, the method comprising: mixing a metal-based dopant and at least one organic-based dopant to prepare a doping solution; stacking a graphene layer on a substrate; and doping the graphene layer with the doping solution that includes the metal-based dopant and the at least one organic-based dopant, wherein: the doping solution comprises a mixture of the metal-based dopant, a first organic-based dopant, and a second organic-based dopant; the metal-based dopant is AuCl, and a concentration of the metal-based dopant in the doping solution is 1 to 10 mM; the first organic-based dopant is bis(trifluoromethanesulfonyl)imide and a concentration of bis(trifluoromethanesulfonyl)imide in the doping solution is 1 to 100 mM; the second organic-based dopant is zinc di [bis(trifluoromethylsulfonyl)imide l or trifluoromethanesulfonyl chloride and a concentration of zinc di[bis(trifluoromethylsulfonyl)imide l or trifluoromethanesulfonyl chloride in the doping solution is 1 to 200 mM; the prepared multi-doped graphene is not reddened; and a rate of decrease in sheet resistance of the multi-doped graphene is 46% to 60%%. Currently amended
A graphene prepared by the method of claim 1. Original
The method of claim 1, wherein a solvent for the doping solution comprises an organic solvent. New
2-9. Canceled
Canceled
(Withdrawn-Currently Amended) A multi-doped graphene comprising: a substrate; and a graphene layer formed on the substrate and doped with a doping solution comprising a mixture of a metal-based dopant, a first organic-based dopant, and [[an]]a second organic-based dopant 2 wherein: the metal-based dopant is AuC l 3 and a concentration of the metal-based dopant in the doping solution is 1 to 10 mM; the first organic-based dopant is bis(trifluoromethanesulfonyl)imide and a concentration of bis(trifluoromethanesulfonyl)imide in the doping solution is 1 to 100 mM; the second organic-based dopant is zinc di [bis(trifluoromethylsulfonyl)imide l or trifluoromethanesulfonyl chloride and a concentration of zinc di[bis(trifluoromethylsulfonyl)imide l or trifluoromethanesulfonyl chloride in the doping solution is 1 to 200 mM; the multi-doped graphene is not reddened; and a rate of decrease in sheet resistance of the multi-doped graphene is 46% to 60%%. Currently amended
12-15. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
multi-doped graphene on substrate
Materials described outside the worked examples.
AuCl₃
bis(trifluoromethanesulfonyl)imide
zinc di[bis(trifluoromethylsulfonyl)imide]
trifluoromethanesulfonyl chloride
organic solvent
nitromethane
CH₃NO₂
nitrobenzene
C₆H₅NO₂
graphene
HAuCl₄
FeCl₃
bis(trifluoromethane)sulfonimide
silver(I) bis(trifluoromethanesulfonyl)imide
1-(trifluoromethanesulfonyl)imidazole
N-(2-pyridyl)bis(trifluoromethanesulfonimide)
bis(trifluoromethanesulfonyl)methane
N-(5-chloro-2-pyridyl)bis(trifluoromethanesulfonimide)
N-phenyl-bis(trifluoromethanesulfonimide)
methyl trifluoromethanesulfonate
trifluoromethanesulfonic anhydride
trifluoromethanesulfonamide
ethyl trifluoromethanesulfonate
zinc trifluoromethanesulfonate
tetracyanoethylene
C₆N₄
2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane
potassium tetrafluoroborate
KBF₄
ammonium tetrafluoroborate
NH₄BF₄
ammonium hexafluorophosphate
NH₄PF₆
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 A to 1D are graphs showing a rate of decrease in graphene sheet resistance according to the concentration of a doping solution when graphene is doped …
FIG. 4 is a graph showing a rate of decrease in sheet resistance of a doped graphene.
FIG. 4 is a graph showing a rate of decrease in sheet resistance of a doped graphene.
FIG. 5 is a graph showing X-ray photoelectron spectroscopy (XPS) results of the doped graphene.
FIG. 5 is a graph showing X-ray photoelectron spectroscopy (XPS) results of the doped graphene.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
rate of decrease in sheet resistance of multi-doped graphene | — | graphene |
Thickness | 1–10 mM | — |
Thickness | 1–100 mM | — |
Thickness | 1–200 mM | — |
Table 2
SVG 15456421.
p. 7
Related documents with shared materials, methods, properties, or citations.
NITROGEN-DOPED TRANSPARENT GRAPHENE FILM AND MANUFACTURING METHOD THEREOF
METHOD OF FABRICATING GRAPHENE STRUCTURE HAVING NANOBUBBLES
Transparent Electrode Comprising Doped Graphene, Process of Preparing The Same, And Display Device And Solar Cell Comprising The Electrode
METHOD OF TRANSFERRING GRAPHENE
GRAPHENE TRANSISTOR GATED BY CHARGES THROUGH A NANOPORE FOR BIO-MOLECULAR SENSING AND DNA SEQUENCING
GRAPHENE BASED MAGNETORESISTANCE SENSORS
METHOD FOR SYNTHESIZING A GRAPHENE PATTERN
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1D are graphs showing a rate of decrease in graphene sheet resistance according to the concentration of a doping solution when graphene is doped …
FIG. 2 is a flowchart showing a method for preparing a multi-doped graphene 3 Atty Docket: 2060-5510 according to an embodiment of the present invention.
FIGS. 3A and 3B are conceptual views showing a method for preparing a graphene layer using a chemical vapor deposition method according to an embodiment of the …
FIG. 4 is a graph showing a rate of decrease in sheet resistance of a doped graphene.
FIG. 5 is a graph showing X-ray photoelectron spectroscopy (XPS) results of the doped graphene.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a multi-doped graphene, the method comprising: mixing a metal-based dopant and at least one organic-based dopant to prepare a doping solution; stacking a graphene layer on a substrate; and doping the graphene layer with the doping solution that includes the metal-based dopant and the at least one organic-based dopant, wherein: the doping solution comprises a mixture of the metal-based dopant, a first organic-based dopant, and a second organic-based dopant; the metal-based dopant is AuCl, and a concentration of the metal-based dopant in the doping solution is 1 to 10 mM; the first organic-based dopant is bis(trifluoromethanesulfonyl)imide and a concentration of bis(trifluoromethanesulfonyl)imide in the doping solution is 1 to 100 mM; the second organic-based dopant is zinc di [bis(trifluoromethylsulfonyl)imide l or trifluoromethanesulfonyl chloride and a concentration of zinc di[bis(trifluoromethylsulfonyl)imide l or trifluoromethanesulfonyl chloride in the doping solution is 1 to 200 mM; the prepared multi-doped graphene is not reddened; and a rate of decrease in sheet resistance of the multi-doped graphene is 46% to 60%%. Currently amended
A graphene prepared by the method of claim 1. Original
The method of claim 1, wherein a solvent for the doping solution comprises an organic solvent. New
2-9. Canceled
Canceled
(Withdrawn-Currently Amended) A multi-doped graphene comprising: a substrate; and a graphene layer formed on the substrate and doped with a doping solution comprising a mixture of a metal-based dopant, a first organic-based dopant, and [[an]]a second organic-based dopant 2 wherein: the metal-based dopant is AuC l 3 and a concentration of the metal-based dopant in the doping solution is 1 to 10 mM; the first organic-based dopant is bis(trifluoromethanesulfonyl)imide and a concentration of bis(trifluoromethanesulfonyl)imide in the doping solution is 1 to 100 mM; the second organic-based dopant is zinc di [bis(trifluoromethylsulfonyl)imide l or trifluoromethanesulfonyl chloride and a concentration of zinc di[bis(trifluoromethylsulfonyl)imide l or trifluoromethanesulfonyl chloride in the doping solution is 1 to 200 mM; the multi-doped graphene is not reddened; and a rate of decrease in sheet resistance of the multi-doped graphene is 46% to 60%%. Currently amended
12-15. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
multi-doped graphene on substrate
Materials described outside the worked examples.
AuCl₃
bis(trifluoromethanesulfonyl)imide
zinc di[bis(trifluoromethylsulfonyl)imide]
trifluoromethanesulfonyl chloride
organic solvent
nitromethane
CH₃NO₂
nitrobenzene
C₆H₅NO₂
graphene
HAuCl₄
FeCl₃
bis(trifluoromethane)sulfonimide
silver(I) bis(trifluoromethanesulfonyl)imide
1-(trifluoromethanesulfonyl)imidazole
N-(2-pyridyl)bis(trifluoromethanesulfonimide)
bis(trifluoromethanesulfonyl)methane
N-(5-chloro-2-pyridyl)bis(trifluoromethanesulfonimide)
N-phenyl-bis(trifluoromethanesulfonimide)
methyl trifluoromethanesulfonate
trifluoromethanesulfonic anhydride
trifluoromethanesulfonamide
ethyl trifluoromethanesulfonate
zinc trifluoromethanesulfonate
tetracyanoethylene
C₆N₄
2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane
potassium tetrafluoroborate
KBF₄
ammonium tetrafluoroborate
NH₄BF₄
ammonium hexafluorophosphate
NH₄PF₆
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 A to 1D are graphs showing a rate of decrease in graphene sheet resistance according to the concentration of a doping solution when graphene is doped …
FIG. 4 is a graph showing a rate of decrease in sheet resistance of a doped graphene.
FIG. 4 is a graph showing a rate of decrease in sheet resistance of a doped graphene.
FIG. 5 is a graph showing X-ray photoelectron spectroscopy (XPS) results of the doped graphene.
FIG. 5 is a graph showing X-ray photoelectron spectroscopy (XPS) results of the doped graphene.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
rate of decrease in sheet resistance of multi-doped graphene | — | graphene |
Thickness | 1–10 mM | — |
Thickness | 1–100 mM | — |
Thickness | 1–200 mM | — |
Table 2
SVG 15456421.
p. 7
Related documents with shared materials, methods, properties, or citations.
NITROGEN-DOPED TRANSPARENT GRAPHENE FILM AND MANUFACTURING METHOD THEREOF
METHOD OF FABRICATING GRAPHENE STRUCTURE HAVING NANOBUBBLES
Transparent Electrode Comprising Doped Graphene, Process of Preparing The Same, And Display Device And Solar Cell Comprising The Electrode
METHOD OF TRANSFERRING GRAPHENE
GRAPHENE TRANSISTOR GATED BY CHARGES THROUGH A NANOPORE FOR BIO-MOLECULAR SENSING AND DNA SEQUENCING
GRAPHENE BASED MAGNETORESISTANCE SENSORS
METHOD FOR SYNTHESIZING A GRAPHENE PATTERN