Patent
US 10,153,064GRAPHENE INTERPOSER AND METHOD OF MANUFACTURING SUCH AN INTERPOSER
Abdelkader ALIANE
US
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Patent
Atlas literature
Patent
US 10,153,064Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a simplified cross-section view of a device according to the invention; -
Figure 2 is a view of a detail of
Figure 3 is a top detail view, illustrating an electrode of an interposer according to the invention; 20 -
Figures 4 to 15 are simplified views illustrating a method of manufacturing an interposer and a circuit according to the invention; and -
Figure 16 is a simplified cross-section view illustrating an alternative interposer according to the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An interface device comprising: a layer of material thoroughly crossed by metal electrodes that electrically connect two electronic circuits; wherein the layer of material comprises a graphene layer having a negative thermal expansion coefficient; and wherein the electrodes each comprise a central electrically-conductive element formed through a thickness of the graphene layer, and an electrically-insulating peripheral layer, interposed between the central electrically-conductive element and the graphene layer: and w herein the c en tral elec tric all y -con ducti ve el em ent is ma d e of copp e r, and wherein the pe ripheral laver is m ade o f cop per m onoxi de. Currently amended
A method of manufacturing the interface device according to claim 1, the method comprising the steps o f: forming the graphene layer comprising holes thoroughly crossing said layer in locations provided for the electrodes; and filling the electrode holes with the electrodes. Withdrawn
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene interposer
Materials described outside the worked examples.
graphene
C
copper
Cu
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thermal Expansion Coefficient Sign | negative | C |
Thickness | 25–50 µm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,153,064Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a simplified cross-section view of a device according to the invention; -
Figure 2 is a view of a detail of
Figure 3 is a top detail view, illustrating an electrode of an interposer according to the invention; 20 -
Figures 4 to 15 are simplified views illustrating a method of manufacturing an interposer and a circuit according to the invention; and -
Figure 16 is a simplified cross-section view illustrating an alternative interposer according to the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An interface device comprising: a layer of material thoroughly crossed by metal electrodes that electrically connect two electronic circuits; wherein the layer of material comprises a graphene layer having a negative thermal expansion coefficient; and wherein the electrodes each comprise a central electrically-conductive element formed through a thickness of the graphene layer, and an electrically-insulating peripheral layer, interposed between the central electrically-conductive element and the graphene layer: and w herein the c en tral elec tric all y -con ducti ve el em ent is ma d e of copp e r, and wherein the pe ripheral laver is m ade o f cop per m onoxi de. Currently amended
A method of manufacturing the interface device according to claim 1, the method comprising the steps o f: forming the graphene layer comprising holes thoroughly crossing said layer in locations provided for the electrodes; and filling the electrode holes with the electrodes. Withdrawn
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene interposer
Materials described outside the worked examples.
graphene
C
copper
Cu
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thermal Expansion Coefficient Sign | negative | C |
Thickness | 25–50 µm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,153,064Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a simplified cross-section view of a device according to the invention; -
Figure 2 is a view of a detail of
Figure 3 is a top detail view, illustrating an electrode of an interposer according to the invention; 20 -
Figures 4 to 15 are simplified views illustrating a method of manufacturing an interposer and a circuit according to the invention; and -
Figure 16 is a simplified cross-section view illustrating an alternative interposer according to the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An interface device comprising: a layer of material thoroughly crossed by metal electrodes that electrically connect two electronic circuits; wherein the layer of material comprises a graphene layer having a negative thermal expansion coefficient; and wherein the electrodes each comprise a central electrically-conductive element formed through a thickness of the graphene layer, and an electrically-insulating peripheral layer, interposed between the central electrically-conductive element and the graphene layer: and w herein the c en tral elec tric all y -con ducti ve el em ent is ma d e of copp e r, and wherein the pe ripheral laver is m ade o f cop per m onoxi de. Currently amended
A method of manufacturing the interface device according to claim 1, the method comprising the steps o f: forming the graphene layer comprising holes thoroughly crossing said layer in locations provided for the electrodes; and filling the electrode holes with the electrodes. Withdrawn
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene interposer
Materials described outside the worked examples.
graphene
C
copper
Cu
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thermal Expansion Coefficient Sign | negative | C |
Thickness | 25–50 µm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,153,064Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a simplified cross-section view of a device according to the invention; -
Figure 2 is a view of a detail of
Figure 3 is a top detail view, illustrating an electrode of an interposer according to the invention; 20 -
Figures 4 to 15 are simplified views illustrating a method of manufacturing an interposer and a circuit according to the invention; and -
Figure 16 is a simplified cross-section view illustrating an alternative interposer according to the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An interface device comprising: a layer of material thoroughly crossed by metal electrodes that electrically connect two electronic circuits; wherein the layer of material comprises a graphene layer having a negative thermal expansion coefficient; and wherein the electrodes each comprise a central electrically-conductive element formed through a thickness of the graphene layer, and an electrically-insulating peripheral layer, interposed between the central electrically-conductive element and the graphene layer: and w herein the c en tral elec tric all y -con ducti ve el em ent is ma d e of copp e r, and wherein the pe ripheral laver is m ade o f cop per m onoxi de. Currently amended
A method of manufacturing the interface device according to claim 1, the method comprising the steps o f: forming the graphene layer comprising holes thoroughly crossing said layer in locations provided for the electrodes; and filling the electrode holes with the electrodes. Withdrawn
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene interposer
Materials described outside the worked examples.
graphene
C
copper
Cu
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thermal Expansion Coefficient Sign | negative | C |
Thickness | 25–50 µm |
Related documents with shared materials, methods, properties, or citations.
copper monoxide
CuO
gold, titanium, or silver
polyethylene naphthalate
polyethylene terephthalate
polyimide
| — |
Thickness | 50–100 µm | — |
Thickness | 1–5 µm | — |
Thickness | 20–50 nm | — |
Duration | 2–20 minutes | — |
Thickness | 25–100 µm | — |
Thickness | 5–10 µm | — |
Duration | 10–30 minutes | — |
Thickness | 20–100 µm | — |
Temperature | 100–130 °C | — |
Thickness | 200–700 nm | — |
Thickness | 3–7 cm | — |
Temperature | 60–90 °C | — |
Duration | 30–30 minutes | — |
Thickness | ≥ 30 nm | — |
HIGH QUALITY LARGE SCALE SINGLE AND MULTILAYER GRAPHENE PRODUCTION BY CHEMICAL VAPOR DEPOSITION
copper monoxide
CuO
gold, titanium, or silver
polyethylene naphthalate
polyethylene terephthalate
polyimide
| — |
Thickness | 50–100 µm | — |
Thickness | 1–5 µm | — |
Thickness | 20–50 nm | — |
Duration | 2–20 minutes | — |
Thickness | 25–100 µm | — |
Thickness | 5–10 µm | — |
Duration | 10–30 minutes | — |
Thickness | 20–100 µm | — |
Temperature | 100–130 °C | — |
Thickness | 200–700 nm | — |
Thickness | 3–7 cm | — |
Temperature | 60–90 °C | — |
Duration | 30–30 minutes | — |
Thickness | ≥ 30 nm | — |
HIGH QUALITY LARGE SCALE SINGLE AND MULTILAYER GRAPHENE PRODUCTION BY CHEMICAL VAPOR DEPOSITION
copper monoxide
CuO
gold, titanium, or silver
polyethylene naphthalate
polyethylene terephthalate
polyimide
| — |
Thickness | 50–100 µm | — |
Thickness | 1–5 µm | — |
Thickness | 20–50 nm | — |
Duration | 2–20 minutes | — |
Thickness | 25–100 µm | — |
Thickness | 5–10 µm | — |
Duration | 10–30 minutes | — |
Thickness | 20–100 µm | — |
Temperature | 100–130 °C | — |
Thickness | 200–700 nm | — |
Thickness | 3–7 cm | — |
Temperature | 60–90 °C | — |
Duration | 30–30 minutes | — |
Thickness | ≥ 30 nm | — |
HIGH QUALITY LARGE SCALE SINGLE AND MULTILAYER GRAPHENE PRODUCTION BY CHEMICAL VAPOR DEPOSITION
copper monoxide
CuO
gold, titanium, or silver
polyethylene naphthalate
polyethylene terephthalate
polyimide
| — |
Thickness | 50–100 µm | — |
Thickness | 1–5 µm | — |
Thickness | 20–50 nm | — |
Duration | 2–20 minutes | — |
Thickness | 25–100 µm | — |
Thickness | 5–10 µm | — |
Duration | 10–30 minutes | — |
Thickness | 20–100 µm | — |
Temperature | 100–130 °C | — |
Thickness | 200–700 nm | — |
Thickness | 3–7 cm | — |
Temperature | 60–90 °C | — |
Duration | 30–30 minutes | — |
Thickness | ≥ 30 nm | — |
HIGH QUALITY LARGE SCALE SINGLE AND MULTILAYER GRAPHENE PRODUCTION BY CHEMICAL VAPOR DEPOSITION