Patent
US 8,865,105Graphene and Its Growth
Yon Hua TZENG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,865,105Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is an electronic microscopic view of the graphene nuclei formed in Example 1 of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Please replace claim 32 with: Graphene dendrites larger than 10; wherein the graphene dendrites outwardly from a graphene nuclei, from which many third branches extend, and so on; wherein graphene.
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials2 process steps
Hydrogen (1–5 sccm) is introduced into a vacuum furnace (5 cm diameter) at residual pressure 0.005–0.06 Torr and heated to 1000–1070 °C, maintained 30–120 minutes to etch furnace interior residues. A copper-surface substrate is then inserted and hydrogen continues to flow to etch copper oxide and surface impurities. The hydrogen-to-carbon atomic ratio in the precursor mixture (H₂/CH₄) is selected between 4 and 100 (preferred 10–30) at pressure 20–60 mTorr to grow snowflake-like graphene dendrites with four, five, or six main branches. Carbon etching gas flow is subsequently reduced or stopped while carbon source gas continues to permit branch merging into a continuous graphene plate.
Materials described outside the worked examples.
graphene nuclei
continuous monolayer graphene plate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Aspect ratio of main branches increases with growth time | — | graphene dendrites |
Number of main branches in graphene dendrites | four, five, or six |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,865,105Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is an electronic microscopic view of the graphene nuclei formed in Example 1 of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Please replace claim 32 with: Graphene dendrites larger than 10; wherein the graphene dendrites outwardly from a graphene nuclei, from which many third branches extend, and so on; wherein graphene.
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials2 process steps
Hydrogen (1–5 sccm) is introduced into a vacuum furnace (5 cm diameter) at residual pressure 0.005–0.06 Torr and heated to 1000–1070 °C, maintained 30–120 minutes to etch furnace interior residues. A copper-surface substrate is then inserted and hydrogen continues to flow to etch copper oxide and surface impurities. The hydrogen-to-carbon atomic ratio in the precursor mixture (H₂/CH₄) is selected between 4 and 100 (preferred 10–30) at pressure 20–60 mTorr to grow snowflake-like graphene dendrites with four, five, or six main branches. Carbon etching gas flow is subsequently reduced or stopped while carbon source gas continues to permit branch merging into a continuous graphene plate.
Materials described outside the worked examples.
graphene nuclei
continuous monolayer graphene plate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Aspect ratio of main branches increases with growth time | — | graphene dendrites |
Number of main branches in graphene dendrites | four, five, or six |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,865,105Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is an electronic microscopic view of the graphene nuclei formed in Example 1 of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Please replace claim 32 with: Graphene dendrites larger than 10; wherein the graphene dendrites outwardly from a graphene nuclei, from which many third branches extend, and so on; wherein graphene.
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials2 process steps
Hydrogen (1–5 sccm) is introduced into a vacuum furnace (5 cm diameter) at residual pressure 0.005–0.06 Torr and heated to 1000–1070 °C, maintained 30–120 minutes to etch furnace interior residues. A copper-surface substrate is then inserted and hydrogen continues to flow to etch copper oxide and surface impurities. The hydrogen-to-carbon atomic ratio in the precursor mixture (H₂/CH₄) is selected between 4 and 100 (preferred 10–30) at pressure 20–60 mTorr to grow snowflake-like graphene dendrites with four, five, or six main branches. Carbon etching gas flow is subsequently reduced or stopped while carbon source gas continues to permit branch merging into a continuous graphene plate.
Materials described outside the worked examples.
graphene nuclei
continuous monolayer graphene plate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Aspect ratio of main branches increases with growth time | — | graphene dendrites |
Number of main branches in graphene dendrites | four, five, or six |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,865,105Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is an electronic microscopic view of the graphene nuclei formed in Example 1 of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Please replace claim 32 with: Graphene dendrites larger than 10; wherein the graphene dendrites outwardly from a graphene nuclei, from which many third branches extend, and so on; wherein graphene.
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials2 process steps
Hydrogen (1–5 sccm) is introduced into a vacuum furnace (5 cm diameter) at residual pressure 0.005–0.06 Torr and heated to 1000–1070 °C, maintained 30–120 minutes to etch furnace interior residues. A copper-surface substrate is then inserted and hydrogen continues to flow to etch copper oxide and surface impurities. The hydrogen-to-carbon atomic ratio in the precursor mixture (H₂/CH₄) is selected between 4 and 100 (preferred 10–30) at pressure 20–60 mTorr to grow snowflake-like graphene dendrites with four, five, or six main branches. Carbon etching gas flow is subsequently reduced or stopped while carbon source gas continues to permit branch merging into a continuous graphene plate.
Materials described outside the worked examples.
graphene nuclei
continuous monolayer graphene plate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Aspect ratio of main branches increases with growth time | — | graphene dendrites |
Number of main branches in graphene dendrites | four, five, or six |
Related documents with shared materials, methods, properties, or citations.
Duration | 1–30 minutes | — |
Duration | 30–100 minutes | — |
Pressure | 0.01–1000 mTorr | — |
Pressure | 1–100 mTorr | — |
Pressure | 20–60 mTorr | — |
Duration | 0.1–1000 minutes | — |
Duration | 0.5–1000 minutes | — |
Pressure | 0.005–0.06 Torr | — |
Pressure | 10–60 mTorr | — |
Duration | 0.5–30 minutes | — |
Duration | 1–30 minutes | — |
Duration | 30–100 minutes | — |
Pressure | 0.01–1000 mTorr | — |
Pressure | 1–100 mTorr | — |
Pressure | 20–60 mTorr | — |
Duration | 0.1–1000 minutes | — |
Duration | 0.5–1000 minutes | — |
Pressure | 0.005–0.06 Torr | — |
Pressure | 10–60 mTorr | — |
Duration | 0.5–30 minutes | — |
Duration | 1–30 minutes | — |
Duration | 30–100 minutes | — |
Pressure | 0.01–1000 mTorr | — |
Pressure | 1–100 mTorr | — |
Pressure | 20–60 mTorr | — |
Duration | 0.1–1000 minutes | — |
Duration | 0.5–1000 minutes | — |
Pressure | 0.005–0.06 Torr | — |
Pressure | 10–60 mTorr | — |
Duration | 0.5–30 minutes | — |
Duration | 1–30 minutes | — |
Duration | 30–100 minutes | — |
Pressure | 0.01–1000 mTorr | — |
Pressure | 1–100 mTorr | — |
Pressure | 20–60 mTorr | — |
Duration | 0.1–1000 minutes | — |
Duration | 0.5–1000 minutes | — |
Pressure | 0.005–0.06 Torr | — |
Pressure | 10–60 mTorr | — |
Duration | 0.5–30 minutes | — |