Patent
US 9,881,862TOP SIDE COOLING FOR GAN POWER DEVICE
Ralf Otremba
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,881,862Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A packaged semiconductor device, comprising: an electrically insulating encapsulant comprising opposite facing first and second planar sides; a thermally conductive substrate that is partially embedded in the encapsulant such that an outer side of the substrate is exposed at the first side of the encapsulant and an inner side of the substrate is contained within the encapsulant; a GaN based power semiconductor device that is completely embedded in the encapsulant and comprising: a main side comprising electrically conductive device terminals, and a rear side that faces away from the main side and is mounted on the inner side of the substrate; and a plurality of electrically conductive leads being partially embedded in the encapsulant and electrically connected to the device terminals, wherein vertical portions of the leads extend away from the substrate towards the second side of the encapsulant. Currently amended
The packaged semiconductor device of claim 1, wherein a connection between the rear side of the semiconductor device and the inner side of the substrate is electrically inactive. Original
An electronic device, comprising: a circuit board comprising a plurality of electronic components electrically connected to one another by conductive tracks; a packaged semiconductor device mounted on the circuit board, the packaged semiconductor device comprising: an electrically insulating encapsulant comprising a first side that faces away from the circuit board and a second side that faces the circuit board; a thermally conductive substrate that is partially embedded in the encapsulant such that an outer side of the substrate is exposed at the first side of the encapsulant and an inner side of the substrate is contained within the encapsulant; a GaN based power semiconductor device that is completely embedded in the encapsulant and comprises: a main side comprising electrically conductive device terminals, and a rear side that faces away from the main side and is mounted on the inner side of the substrate; and a plurality of electrically conductive leads being partially embedded in the encapsulant and form an electrical connection between the device terminals of the semiconductor device and the conductive tracks of the circuit board. Currently amended
The electronic device of claim 11, wherein a connection between the rear side of the semiconductor device and the inner side of the substrate is electrically inactive. Original
Layer stacks claimed or described, ordered top of device to substrate.
packaged GaN power semiconductor device (standalone)
GaN lateral HEMT device
electronic device with packaged GaN semiconductor on circuit board
Materials described outside the worked examples.
GaN based power semiconductor
thermally conductive substrate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 200 nm | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,881,862Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A packaged semiconductor device, comprising: an electrically insulating encapsulant comprising opposite facing first and second planar sides; a thermally conductive substrate that is partially embedded in the encapsulant such that an outer side of the substrate is exposed at the first side of the encapsulant and an inner side of the substrate is contained within the encapsulant; a GaN based power semiconductor device that is completely embedded in the encapsulant and comprising: a main side comprising electrically conductive device terminals, and a rear side that faces away from the main side and is mounted on the inner side of the substrate; and a plurality of electrically conductive leads being partially embedded in the encapsulant and electrically connected to the device terminals, wherein vertical portions of the leads extend away from the substrate towards the second side of the encapsulant. Currently amended
The packaged semiconductor device of claim 1, wherein a connection between the rear side of the semiconductor device and the inner side of the substrate is electrically inactive. Original
An electronic device, comprising: a circuit board comprising a plurality of electronic components electrically connected to one another by conductive tracks; a packaged semiconductor device mounted on the circuit board, the packaged semiconductor device comprising: an electrically insulating encapsulant comprising a first side that faces away from the circuit board and a second side that faces the circuit board; a thermally conductive substrate that is partially embedded in the encapsulant such that an outer side of the substrate is exposed at the first side of the encapsulant and an inner side of the substrate is contained within the encapsulant; a GaN based power semiconductor device that is completely embedded in the encapsulant and comprises: a main side comprising electrically conductive device terminals, and a rear side that faces away from the main side and is mounted on the inner side of the substrate; and a plurality of electrically conductive leads being partially embedded in the encapsulant and form an electrical connection between the device terminals of the semiconductor device and the conductive tracks of the circuit board. Currently amended
The electronic device of claim 11, wherein a connection between the rear side of the semiconductor device and the inner side of the substrate is electrically inactive. Original
Layer stacks claimed or described, ordered top of device to substrate.
packaged GaN power semiconductor device (standalone)
GaN lateral HEMT device
electronic device with packaged GaN semiconductor on circuit board
Materials described outside the worked examples.
GaN based power semiconductor
thermally conductive substrate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 200 nm | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,881,862Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A packaged semiconductor device, comprising: an electrically insulating encapsulant comprising opposite facing first and second planar sides; a thermally conductive substrate that is partially embedded in the encapsulant such that an outer side of the substrate is exposed at the first side of the encapsulant and an inner side of the substrate is contained within the encapsulant; a GaN based power semiconductor device that is completely embedded in the encapsulant and comprising: a main side comprising electrically conductive device terminals, and a rear side that faces away from the main side and is mounted on the inner side of the substrate; and a plurality of electrically conductive leads being partially embedded in the encapsulant and electrically connected to the device terminals, wherein vertical portions of the leads extend away from the substrate towards the second side of the encapsulant. Currently amended
The packaged semiconductor device of claim 1, wherein a connection between the rear side of the semiconductor device and the inner side of the substrate is electrically inactive. Original
An electronic device, comprising: a circuit board comprising a plurality of electronic components electrically connected to one another by conductive tracks; a packaged semiconductor device mounted on the circuit board, the packaged semiconductor device comprising: an electrically insulating encapsulant comprising a first side that faces away from the circuit board and a second side that faces the circuit board; a thermally conductive substrate that is partially embedded in the encapsulant such that an outer side of the substrate is exposed at the first side of the encapsulant and an inner side of the substrate is contained within the encapsulant; a GaN based power semiconductor device that is completely embedded in the encapsulant and comprises: a main side comprising electrically conductive device terminals, and a rear side that faces away from the main side and is mounted on the inner side of the substrate; and a plurality of electrically conductive leads being partially embedded in the encapsulant and form an electrical connection between the device terminals of the semiconductor device and the conductive tracks of the circuit board. Currently amended
The electronic device of claim 11, wherein a connection between the rear side of the semiconductor device and the inner side of the substrate is electrically inactive. Original
Layer stacks claimed or described, ordered top of device to substrate.
packaged GaN power semiconductor device (standalone)
GaN lateral HEMT device
electronic device with packaged GaN semiconductor on circuit board
Materials described outside the worked examples.
GaN based power semiconductor
thermally conductive substrate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 200 nm | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,881,862Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A packaged semiconductor device, comprising: an electrically insulating encapsulant comprising opposite facing first and second planar sides; a thermally conductive substrate that is partially embedded in the encapsulant such that an outer side of the substrate is exposed at the first side of the encapsulant and an inner side of the substrate is contained within the encapsulant; a GaN based power semiconductor device that is completely embedded in the encapsulant and comprising: a main side comprising electrically conductive device terminals, and a rear side that faces away from the main side and is mounted on the inner side of the substrate; and a plurality of electrically conductive leads being partially embedded in the encapsulant and electrically connected to the device terminals, wherein vertical portions of the leads extend away from the substrate towards the second side of the encapsulant. Currently amended
The packaged semiconductor device of claim 1, wherein a connection between the rear side of the semiconductor device and the inner side of the substrate is electrically inactive. Original
An electronic device, comprising: a circuit board comprising a plurality of electronic components electrically connected to one another by conductive tracks; a packaged semiconductor device mounted on the circuit board, the packaged semiconductor device comprising: an electrically insulating encapsulant comprising a first side that faces away from the circuit board and a second side that faces the circuit board; a thermally conductive substrate that is partially embedded in the encapsulant such that an outer side of the substrate is exposed at the first side of the encapsulant and an inner side of the substrate is contained within the encapsulant; a GaN based power semiconductor device that is completely embedded in the encapsulant and comprises: a main side comprising electrically conductive device terminals, and a rear side that faces away from the main side and is mounted on the inner side of the substrate; and a plurality of electrically conductive leads being partially embedded in the encapsulant and form an electrical connection between the device terminals of the semiconductor device and the conductive tracks of the circuit board. Currently amended
The electronic device of claim 11, wherein a connection between the rear side of the semiconductor device and the inner side of the substrate is electrically inactive. Original
Layer stacks claimed or described, ordered top of device to substrate.
packaged GaN power semiconductor device (standalone)
GaN lateral HEMT device
electronic device with packaged GaN semiconductor on circuit board
Materials described outside the worked examples.
GaN based power semiconductor
thermally conductive substrate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 200 nm | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
electrically insulating encapsulant
thermosetting plastic
copper
Cu
aluminum
Al
AlN interlayer
AlN
| — |
ULTRA-DENSE LED PROJECTOR USING THINNED GALLIUM NITRIDE
electrically insulating encapsulant
thermosetting plastic
copper
Cu
aluminum
Al
AlN interlayer
AlN
| — |
ULTRA-DENSE LED PROJECTOR USING THINNED GALLIUM NITRIDE
electrically insulating encapsulant
thermosetting plastic
copper
Cu
aluminum
Al
AlN interlayer
AlN
| — |
ULTRA-DENSE LED PROJECTOR USING THINNED GALLIUM NITRIDE
electrically insulating encapsulant
thermosetting plastic
copper
Cu
aluminum
Al
AlN interlayer
AlN
| — |