Patent
US 11,862,688 B2INTEGRATED GAN POWER MODULE
Ashish K. Sahoo, Brandon Pierquet, Derryk C. Davis, Javier Ruiz et al.
Apple Inc., Cupertino, CA (US)·Jan. 2, 2024·US
Copyright © 2026 Matter42. All rights reserved.
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US 11,862,688 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic cross-sectional view of an integrated power module according to some embodiments of the present technology.
FIG. 2 shows a schematic cross-sectional view of an integrated power module according to some embodiments of 5 the present technology.
FIG. 3 shows a schematic cross-sectional view of an integrated power module according to some embodiments of the present technology.
FIG. 4 shows a schematic cross-sectional view of an 10 integrated power module according to some embodiments of the present technology.
FIG. 5 shows a schematic cross-sectional view of an integrated power module according to some embodiments of the present technology. 15 Several of the figures …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated power module comprising: a printed circuit board characterized by a first surface and a second surface, and including a thermal via extending from the second surface towards the first surface; one or more surface-mounted components coupled with the first surface of the printed circuit board; a heat-transfer substrate; one or more gallium nitride transistors coupled between and soldered to each of the second surface of the printed circuit board and the heat-transfer substrate; and a spacer coupled between and soldered to each of the printed circuit board and the heat-transfer substrate, wherein the spacer is directly coupled to the thermal via.
The integrated power module of claim 1, wherein the heat-transfer substrate is an insulated metal substrate.
The integrated power module of claim 1, wherein the one or more surface-mounted components comprise at least one of a gate driver, a capacitor, a diode, a switch, or a thermistor.
The integrated power module of claim 1, wherein the one or more spacers comprise solder-plated copper spacers.
The integrated power module of claim 1, further comprising: molding extending between the printed circuit board and the heat-transfer substrate, and further extending about the one or more gallium nitride transistors and the one or more spacers.
The integrated power module of claim 1, further comprising: potting extending across the first surface of the printed circuit board and extending about the one or more surface-mounted components.
An integrated power module comprising: a printed circuit board characterized by a first surface and a second surface, and including a thermal via extending from the second surface towards the first surface; one or more surface-mounted components coupled with the first surface of the printed circuit board; a first heat-transfer substrate; a second heat-transfer substrate; a first gallium nitride transistor coupled between and soldered to each of the second surface of the printed circuit board and the first heat-transfer substrate; a second gallium nitride transistor coupled between and soldered to each of the second surface of the printed circuit board and the second heat-transfer substrate; and a first spacer coupled between and soldered to each of the printed circuit board and the first heat-transfer substrate, wherein the spacer is directly coupled to the thermal via.
The integrated power module of claim 9, wherein at least one of the first and second heat-transfer substrates comprise a direct-bonded copper board.
The integrated power module of claim 9, further comprising: at least four heat-transfer substrates including the first heat-transfer substrate and the second heat-transfer substrate; and at least four gallium nitride transistors including the first gallium nitride transistor and the second gallium nitride transistor.
The integrated power module of claim 9, wherein the first heat-transfer substrate and the second heat-transfer substrate each are an insulated metal substrate comprising a copper base and one or more insulation layers.
The integrated power module of claim 9, further comprising: molding extending along the second surface of the printed circuit board, and extending between the first heat-transfer substrate and the second heat-transfer substrate.
The integrated power module of claim 9, wherein the first heat-transfer substrate and the second heat-transfer substrate each are a direct-bonded copper including a ceramic layer between copper layers.
The integrated power module of claim 9, further comprising: a transformer core coupled with the first surface of the printed circuit board, wherein the transformer core separates the surface-mounted components into a first subset of surface-mounted components and a second subset of surface-mounted components.
An integrated power module comprising: a printed circuit board characterized by a first surface and a second surface, and including a via extending from the second surface towards the first surface; one or more surface-mounted components coupled with the first surface of the printed circuit board; a heat-transfer substrate comprising an insulated metal substrate including a copper base and one or more insulation layers; one or more gallium nitride transistors coupled between and soldered to each of the second surface of the printed circuit board and the heat-transfer substrate; and a spacer coupled between and soldered to each of the printed circuit board and the heat-transfer substrate, wherein: the spacer is directly coupled to the via; and wherein the one or more spacers comprise solder-plated copper spacers. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
integrated GaN power module (single heat-transfer substrate)
integrated GaN power module (dual heat-transfer substrates)
Materials described outside the worked examples.
gallium nitride
GaN
printed circuit board
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 29
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,862,688 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic cross-sectional view of an integrated power module according to some embodiments of the present technology.
FIG. 2 shows a schematic cross-sectional view of an integrated power module according to some embodiments of 5 the present technology.
FIG. 3 shows a schematic cross-sectional view of an integrated power module according to some embodiments of the present technology.
FIG. 4 shows a schematic cross-sectional view of an 10 integrated power module according to some embodiments of the present technology.
FIG. 5 shows a schematic cross-sectional view of an integrated power module according to some embodiments of the present technology. 15 Several of the figures …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated power module comprising: a printed circuit board characterized by a first surface and a second surface, and including a thermal via extending from the second surface towards the first surface; one or more surface-mounted components coupled with the first surface of the printed circuit board; a heat-transfer substrate; one or more gallium nitride transistors coupled between and soldered to each of the second surface of the printed circuit board and the heat-transfer substrate; and a spacer coupled between and soldered to each of the printed circuit board and the heat-transfer substrate, wherein the spacer is directly coupled to the thermal via.
The integrated power module of claim 1, wherein the heat-transfer substrate is an insulated metal substrate.
The integrated power module of claim 1, wherein the one or more surface-mounted components comprise at least one of a gate driver, a capacitor, a diode, a switch, or a thermistor.
The integrated power module of claim 1, wherein the one or more spacers comprise solder-plated copper spacers.
The integrated power module of claim 1, further comprising: molding extending between the printed circuit board and the heat-transfer substrate, and further extending about the one or more gallium nitride transistors and the one or more spacers.
The integrated power module of claim 1, further comprising: potting extending across the first surface of the printed circuit board and extending about the one or more surface-mounted components.
An integrated power module comprising: a printed circuit board characterized by a first surface and a second surface, and including a thermal via extending from the second surface towards the first surface; one or more surface-mounted components coupled with the first surface of the printed circuit board; a first heat-transfer substrate; a second heat-transfer substrate; a first gallium nitride transistor coupled between and soldered to each of the second surface of the printed circuit board and the first heat-transfer substrate; a second gallium nitride transistor coupled between and soldered to each of the second surface of the printed circuit board and the second heat-transfer substrate; and a first spacer coupled between and soldered to each of the printed circuit board and the first heat-transfer substrate, wherein the spacer is directly coupled to the thermal via.
The integrated power module of claim 9, wherein at least one of the first and second heat-transfer substrates comprise a direct-bonded copper board.
The integrated power module of claim 9, further comprising: at least four heat-transfer substrates including the first heat-transfer substrate and the second heat-transfer substrate; and at least four gallium nitride transistors including the first gallium nitride transistor and the second gallium nitride transistor.
The integrated power module of claim 9, wherein the first heat-transfer substrate and the second heat-transfer substrate each are an insulated metal substrate comprising a copper base and one or more insulation layers.
The integrated power module of claim 9, further comprising: molding extending along the second surface of the printed circuit board, and extending between the first heat-transfer substrate and the second heat-transfer substrate.
The integrated power module of claim 9, wherein the first heat-transfer substrate and the second heat-transfer substrate each are a direct-bonded copper including a ceramic layer between copper layers.
The integrated power module of claim 9, further comprising: a transformer core coupled with the first surface of the printed circuit board, wherein the transformer core separates the surface-mounted components into a first subset of surface-mounted components and a second subset of surface-mounted components.
An integrated power module comprising: a printed circuit board characterized by a first surface and a second surface, and including a via extending from the second surface towards the first surface; one or more surface-mounted components coupled with the first surface of the printed circuit board; a heat-transfer substrate comprising an insulated metal substrate including a copper base and one or more insulation layers; one or more gallium nitride transistors coupled between and soldered to each of the second surface of the printed circuit board and the heat-transfer substrate; and a spacer coupled between and soldered to each of the printed circuit board and the heat-transfer substrate, wherein: the spacer is directly coupled to the via; and wherein the one or more spacers comprise solder-plated copper spacers. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
integrated GaN power module (single heat-transfer substrate)
integrated GaN power module (dual heat-transfer substrates)
Materials described outside the worked examples.
gallium nitride
GaN
printed circuit board
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 29
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,862,688 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic cross-sectional view of an integrated power module according to some embodiments of the present technology.
FIG. 2 shows a schematic cross-sectional view of an integrated power module according to some embodiments of 5 the present technology.
FIG. 3 shows a schematic cross-sectional view of an integrated power module according to some embodiments of the present technology.
FIG. 4 shows a schematic cross-sectional view of an 10 integrated power module according to some embodiments of the present technology.
FIG. 5 shows a schematic cross-sectional view of an integrated power module according to some embodiments of the present technology. 15 Several of the figures …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated power module comprising: a printed circuit board characterized by a first surface and a second surface, and including a thermal via extending from the second surface towards the first surface; one or more surface-mounted components coupled with the first surface of the printed circuit board; a heat-transfer substrate; one or more gallium nitride transistors coupled between and soldered to each of the second surface of the printed circuit board and the heat-transfer substrate; and a spacer coupled between and soldered to each of the printed circuit board and the heat-transfer substrate, wherein the spacer is directly coupled to the thermal via.
The integrated power module of claim 1, wherein the heat-transfer substrate is an insulated metal substrate.
The integrated power module of claim 1, wherein the one or more surface-mounted components comprise at least one of a gate driver, a capacitor, a diode, a switch, or a thermistor.
The integrated power module of claim 1, wherein the one or more spacers comprise solder-plated copper spacers.
The integrated power module of claim 1, further comprising: molding extending between the printed circuit board and the heat-transfer substrate, and further extending about the one or more gallium nitride transistors and the one or more spacers.
The integrated power module of claim 1, further comprising: potting extending across the first surface of the printed circuit board and extending about the one or more surface-mounted components.
An integrated power module comprising: a printed circuit board characterized by a first surface and a second surface, and including a thermal via extending from the second surface towards the first surface; one or more surface-mounted components coupled with the first surface of the printed circuit board; a first heat-transfer substrate; a second heat-transfer substrate; a first gallium nitride transistor coupled between and soldered to each of the second surface of the printed circuit board and the first heat-transfer substrate; a second gallium nitride transistor coupled between and soldered to each of the second surface of the printed circuit board and the second heat-transfer substrate; and a first spacer coupled between and soldered to each of the printed circuit board and the first heat-transfer substrate, wherein the spacer is directly coupled to the thermal via.
The integrated power module of claim 9, wherein at least one of the first and second heat-transfer substrates comprise a direct-bonded copper board.
The integrated power module of claim 9, further comprising: at least four heat-transfer substrates including the first heat-transfer substrate and the second heat-transfer substrate; and at least four gallium nitride transistors including the first gallium nitride transistor and the second gallium nitride transistor.
The integrated power module of claim 9, wherein the first heat-transfer substrate and the second heat-transfer substrate each are an insulated metal substrate comprising a copper base and one or more insulation layers.
The integrated power module of claim 9, further comprising: molding extending along the second surface of the printed circuit board, and extending between the first heat-transfer substrate and the second heat-transfer substrate.
The integrated power module of claim 9, wherein the first heat-transfer substrate and the second heat-transfer substrate each are a direct-bonded copper including a ceramic layer between copper layers.
The integrated power module of claim 9, further comprising: a transformer core coupled with the first surface of the printed circuit board, wherein the transformer core separates the surface-mounted components into a first subset of surface-mounted components and a second subset of surface-mounted components.
An integrated power module comprising: a printed circuit board characterized by a first surface and a second surface, and including a via extending from the second surface towards the first surface; one or more surface-mounted components coupled with the first surface of the printed circuit board; a heat-transfer substrate comprising an insulated metal substrate including a copper base and one or more insulation layers; one or more gallium nitride transistors coupled between and soldered to each of the second surface of the printed circuit board and the heat-transfer substrate; and a spacer coupled between and soldered to each of the printed circuit board and the heat-transfer substrate, wherein: the spacer is directly coupled to the via; and wherein the one or more spacers comprise solder-plated copper spacers. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
integrated GaN power module (single heat-transfer substrate)
integrated GaN power module (dual heat-transfer substrates)
Materials described outside the worked examples.
gallium nitride
GaN
printed circuit board
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 29
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,862,688 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic cross-sectional view of an integrated power module according to some embodiments of the present technology.
FIG. 2 shows a schematic cross-sectional view of an integrated power module according to some embodiments of 5 the present technology.
FIG. 3 shows a schematic cross-sectional view of an integrated power module according to some embodiments of the present technology.
FIG. 4 shows a schematic cross-sectional view of an 10 integrated power module according to some embodiments of the present technology.
FIG. 5 shows a schematic cross-sectional view of an integrated power module according to some embodiments of the present technology. 15 Several of the figures …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated power module comprising: a printed circuit board characterized by a first surface and a second surface, and including a thermal via extending from the second surface towards the first surface; one or more surface-mounted components coupled with the first surface of the printed circuit board; a heat-transfer substrate; one or more gallium nitride transistors coupled between and soldered to each of the second surface of the printed circuit board and the heat-transfer substrate; and a spacer coupled between and soldered to each of the printed circuit board and the heat-transfer substrate, wherein the spacer is directly coupled to the thermal via.
The integrated power module of claim 1, wherein the heat-transfer substrate is an insulated metal substrate.
The integrated power module of claim 1, wherein the one or more surface-mounted components comprise at least one of a gate driver, a capacitor, a diode, a switch, or a thermistor.
The integrated power module of claim 1, wherein the one or more spacers comprise solder-plated copper spacers.
The integrated power module of claim 1, further comprising: molding extending between the printed circuit board and the heat-transfer substrate, and further extending about the one or more gallium nitride transistors and the one or more spacers.
The integrated power module of claim 1, further comprising: potting extending across the first surface of the printed circuit board and extending about the one or more surface-mounted components.
An integrated power module comprising: a printed circuit board characterized by a first surface and a second surface, and including a thermal via extending from the second surface towards the first surface; one or more surface-mounted components coupled with the first surface of the printed circuit board; a first heat-transfer substrate; a second heat-transfer substrate; a first gallium nitride transistor coupled between and soldered to each of the second surface of the printed circuit board and the first heat-transfer substrate; a second gallium nitride transistor coupled between and soldered to each of the second surface of the printed circuit board and the second heat-transfer substrate; and a first spacer coupled between and soldered to each of the printed circuit board and the first heat-transfer substrate, wherein the spacer is directly coupled to the thermal via.
The integrated power module of claim 9, wherein at least one of the first and second heat-transfer substrates comprise a direct-bonded copper board.
The integrated power module of claim 9, further comprising: at least four heat-transfer substrates including the first heat-transfer substrate and the second heat-transfer substrate; and at least four gallium nitride transistors including the first gallium nitride transistor and the second gallium nitride transistor.
The integrated power module of claim 9, wherein the first heat-transfer substrate and the second heat-transfer substrate each are an insulated metal substrate comprising a copper base and one or more insulation layers.
The integrated power module of claim 9, further comprising: molding extending along the second surface of the printed circuit board, and extending between the first heat-transfer substrate and the second heat-transfer substrate.
The integrated power module of claim 9, wherein the first heat-transfer substrate and the second heat-transfer substrate each are a direct-bonded copper including a ceramic layer between copper layers.
The integrated power module of claim 9, further comprising: a transformer core coupled with the first surface of the printed circuit board, wherein the transformer core separates the surface-mounted components into a first subset of surface-mounted components and a second subset of surface-mounted components.
An integrated power module comprising: a printed circuit board characterized by a first surface and a second surface, and including a via extending from the second surface towards the first surface; one or more surface-mounted components coupled with the first surface of the printed circuit board; a heat-transfer substrate comprising an insulated metal substrate including a copper base and one or more insulation layers; one or more gallium nitride transistors coupled between and soldered to each of the second surface of the printed circuit board and the heat-transfer substrate; and a spacer coupled between and soldered to each of the printed circuit board and the heat-transfer substrate, wherein: the spacer is directly coupled to the via; and wherein the one or more spacers comprise solder-plated copper spacers. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
integrated GaN power module (single heat-transfer substrate)
integrated GaN power module (dual heat-transfer substrates)
Materials described outside the worked examples.
gallium nitride
GaN
printed circuit board
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 29
Related documents with shared materials, methods, properties, or citations.
integrated GaN power module (IMS with solder-plated copper spacer)
insulated metal substrate
copper base with insulation layers
solder-plated copper spacer
direct-bonded copper board
ceramic layer
Cited non-patent literature · 1
Top Side Cooling for GaN Power Device
integrated GaN power module (IMS with solder-plated copper spacer)
insulated metal substrate
copper base with insulation layers
solder-plated copper spacer
direct-bonded copper board
ceramic layer
Cited non-patent literature · 1
Top Side Cooling for GaN Power Device
integrated GaN power module (IMS with solder-plated copper spacer)
insulated metal substrate
copper base with insulation layers
solder-plated copper spacer
direct-bonded copper board
ceramic layer
Cited non-patent literature · 1
Top Side Cooling for GaN Power Device
integrated GaN power module (IMS with solder-plated copper spacer)
insulated metal substrate
copper base with insulation layers
solder-plated copper spacer
direct-bonded copper board
ceramic layer
Cited non-patent literature · 1
Top Side Cooling for GaN Power Device