Patent
US 10,165,679SCALABLE, PRINTABLE, PATTERNED SHEET OF HIGH MOBILITY GRAPHENE ON FLEXIBLE SUBSTRATES
JOHNSON, Alan T., GUDIBANDE, Rajatesh R.
THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,165,679Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. [0034] Next, graphene is transferred off of the copper film using suitable techniques. This can be achieved without applying any additional layers that …
FIG. 2. Following release from curling, there were no visible signs of damage, and electrical properties of the graphene were measured before and aft er …
FIG. 3, which includes patterned graphene-on-polymer workpieces placed onto a glass slide for storage and later use. Additional workpieces have been fabricated …
FIG. 5(b) shows a typical I-Vg of a sample after it has been curled around an object with a radius of 0.5 mm. Using a standard model, the inferred mobility is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
-28. Canceled
Canceled
A method of forming a patterned structure, the method comprising: forming a graphene layer on a substrate; forming a patterned la y er coupled to the graphene la y er y; and separating the graphene layer from the substrate according to a pattern of the patterned layer. Currently amended
The method of claim 29, wherein the substrate is comprises a catalytic film. Currently amended
The method of claim 29, wherein said graphene layer comprises a graphene monolayer or continuous la y ers of graphene. Currently amended
The method of claim 29, wherein forming the g raphene layer on a the substrate omprises depositing the graphene lay er using chemical vapor deposition. Currently amended
The method of claim 29, wherein forming the patterned layer comprises inkjet printing, laser printing, 3D printing, screen printing, flexography, gravure, offset lithography, nanoimprint lithography, or any combination thereof. Currently amended
The method of claim 29 30, wherein the catalytic film comprises Cu, Ni or Pt foil. Currently amended
The method of claim 29, wherein the patterned layer is formed on the graphene layer, c. Currently amended
The method of claim 29, wherein separating the graphene layer from the substrate comprises etching of the substrate, a bubbling transfer process, a mechanical separation process, or a combination thereof. Currently amended
The method of claim 29, further comprising: forming a layer of material on the patterned layer prior to separating the graphene layer from the substrate,,,. Currently amended
The method of claim 29, further comprising: attaching the separated graphene layer onto a base substrate. Currently amended
The method of claim 29, wherein separating the graphene layer from the substrate comprises releasing portions of the graphene layer according to the pattern of the patterned layer. New
The method of claim 29, wherein the graphene layer is supported by the patterned layer after the graphene layer is separated from the substrate. New
The method of claim 29, wherein separating the graphene layer from the substrate comprises decoupling the substrate from the graphene layer. New
The method of claim 29, wherein forming the patterned layer comprises selective sintering of a material. New
The method of claim 29, wherein forming the patterned layer comprises selectively depositing a liquid binding material in a powder-bed layer. New
A patterned structure comprising: f) a patterned layer; and b) a graphene la y er coupled to the patterned layer, wherein the graphene la y er is configured to be separated from a substrate according to a pattern of the patterned la yer to thereby pattern the graphene layer. Currently amended
The patterned structure of claim 41,, wherein the patterned layer provides support for the graphene layer that is separated from the substrate. Currently amended
The patterned structure of claim 41, wherein the patterned structure is a free-standing structure that is separated from the substrate. New
The patterned structure of claim 41, wherein the patterned structure is configured to be coupled to a base substrate. New
The patterned structure of claim 4 1 42, wherein the separated graphene layer has the same pattern as the patterned layer,,,,,,,,,,,,,,,,,,,,. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
patterned graphene structure on flexible substrate
Materials described outside the worked examples.
graphene
C
patterned layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. Following release from curling, there were no visible signs of damage, and electrical properties of the graphene were measured before and aft er …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Mobility | 10000 cm2/V-s | C |
Thickness | 500–100000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,165,679Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. [0034] Next, graphene is transferred off of the copper film using suitable techniques. This can be achieved without applying any additional layers that …
FIG. 2. Following release from curling, there were no visible signs of damage, and electrical properties of the graphene were measured before and aft er …
FIG. 3, which includes patterned graphene-on-polymer workpieces placed onto a glass slide for storage and later use. Additional workpieces have been fabricated …
FIG. 5(b) shows a typical I-Vg of a sample after it has been curled around an object with a radius of 0.5 mm. Using a standard model, the inferred mobility is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
-28. Canceled
Canceled
A method of forming a patterned structure, the method comprising: forming a graphene layer on a substrate; forming a patterned la y er coupled to the graphene la y er y; and separating the graphene layer from the substrate according to a pattern of the patterned layer. Currently amended
The method of claim 29, wherein the substrate is comprises a catalytic film. Currently amended
The method of claim 29, wherein said graphene layer comprises a graphene monolayer or continuous la y ers of graphene. Currently amended
The method of claim 29, wherein forming the g raphene layer on a the substrate omprises depositing the graphene lay er using chemical vapor deposition. Currently amended
The method of claim 29, wherein forming the patterned layer comprises inkjet printing, laser printing, 3D printing, screen printing, flexography, gravure, offset lithography, nanoimprint lithography, or any combination thereof. Currently amended
The method of claim 29 30, wherein the catalytic film comprises Cu, Ni or Pt foil. Currently amended
The method of claim 29, wherein the patterned layer is formed on the graphene layer, c. Currently amended
The method of claim 29, wherein separating the graphene layer from the substrate comprises etching of the substrate, a bubbling transfer process, a mechanical separation process, or a combination thereof. Currently amended
The method of claim 29, further comprising: forming a layer of material on the patterned layer prior to separating the graphene layer from the substrate,,,. Currently amended
The method of claim 29, further comprising: attaching the separated graphene layer onto a base substrate. Currently amended
The method of claim 29, wherein separating the graphene layer from the substrate comprises releasing portions of the graphene layer according to the pattern of the patterned layer. New
The method of claim 29, wherein the graphene layer is supported by the patterned layer after the graphene layer is separated from the substrate. New
The method of claim 29, wherein separating the graphene layer from the substrate comprises decoupling the substrate from the graphene layer. New
The method of claim 29, wherein forming the patterned layer comprises selective sintering of a material. New
The method of claim 29, wherein forming the patterned layer comprises selectively depositing a liquid binding material in a powder-bed layer. New
A patterned structure comprising: f) a patterned layer; and b) a graphene la y er coupled to the patterned layer, wherein the graphene la y er is configured to be separated from a substrate according to a pattern of the patterned la yer to thereby pattern the graphene layer. Currently amended
The patterned structure of claim 41,, wherein the patterned layer provides support for the graphene layer that is separated from the substrate. Currently amended
The patterned structure of claim 41, wherein the patterned structure is a free-standing structure that is separated from the substrate. New
The patterned structure of claim 41, wherein the patterned structure is configured to be coupled to a base substrate. New
The patterned structure of claim 4 1 42, wherein the separated graphene layer has the same pattern as the patterned layer,,,,,,,,,,,,,,,,,,,,. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
patterned graphene structure on flexible substrate
Materials described outside the worked examples.
graphene
C
patterned layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. Following release from curling, there were no visible signs of damage, and electrical properties of the graphene were measured before and aft er …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Mobility | 10000 cm2/V-s | C |
Thickness | 500–100000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,165,679Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. [0034] Next, graphene is transferred off of the copper film using suitable techniques. This can be achieved without applying any additional layers that …
FIG. 2. Following release from curling, there were no visible signs of damage, and electrical properties of the graphene were measured before and aft er …
FIG. 3, which includes patterned graphene-on-polymer workpieces placed onto a glass slide for storage and later use. Additional workpieces have been fabricated …
FIG. 5(b) shows a typical I-Vg of a sample after it has been curled around an object with a radius of 0.5 mm. Using a standard model, the inferred mobility is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
-28. Canceled
Canceled
A method of forming a patterned structure, the method comprising: forming a graphene layer on a substrate; forming a patterned la y er coupled to the graphene la y er y; and separating the graphene layer from the substrate according to a pattern of the patterned layer. Currently amended
The method of claim 29, wherein the substrate is comprises a catalytic film. Currently amended
The method of claim 29, wherein said graphene layer comprises a graphene monolayer or continuous la y ers of graphene. Currently amended
The method of claim 29, wherein forming the g raphene layer on a the substrate omprises depositing the graphene lay er using chemical vapor deposition. Currently amended
The method of claim 29, wherein forming the patterned layer comprises inkjet printing, laser printing, 3D printing, screen printing, flexography, gravure, offset lithography, nanoimprint lithography, or any combination thereof. Currently amended
The method of claim 29 30, wherein the catalytic film comprises Cu, Ni or Pt foil. Currently amended
The method of claim 29, wherein the patterned layer is formed on the graphene layer, c. Currently amended
The method of claim 29, wherein separating the graphene layer from the substrate comprises etching of the substrate, a bubbling transfer process, a mechanical separation process, or a combination thereof. Currently amended
The method of claim 29, further comprising: forming a layer of material on the patterned layer prior to separating the graphene layer from the substrate,,,. Currently amended
The method of claim 29, further comprising: attaching the separated graphene layer onto a base substrate. Currently amended
The method of claim 29, wherein separating the graphene layer from the substrate comprises releasing portions of the graphene layer according to the pattern of the patterned layer. New
The method of claim 29, wherein the graphene layer is supported by the patterned layer after the graphene layer is separated from the substrate. New
The method of claim 29, wherein separating the graphene layer from the substrate comprises decoupling the substrate from the graphene layer. New
The method of claim 29, wherein forming the patterned layer comprises selective sintering of a material. New
The method of claim 29, wherein forming the patterned layer comprises selectively depositing a liquid binding material in a powder-bed layer. New
A patterned structure comprising: f) a patterned layer; and b) a graphene la y er coupled to the patterned layer, wherein the graphene la y er is configured to be separated from a substrate according to a pattern of the patterned la yer to thereby pattern the graphene layer. Currently amended
The patterned structure of claim 41,, wherein the patterned layer provides support for the graphene layer that is separated from the substrate. Currently amended
The patterned structure of claim 41, wherein the patterned structure is a free-standing structure that is separated from the substrate. New
The patterned structure of claim 41, wherein the patterned structure is configured to be coupled to a base substrate. New
The patterned structure of claim 4 1 42, wherein the separated graphene layer has the same pattern as the patterned layer,,,,,,,,,,,,,,,,,,,,. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
patterned graphene structure on flexible substrate
Materials described outside the worked examples.
graphene
C
patterned layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. Following release from curling, there were no visible signs of damage, and electrical properties of the graphene were measured before and aft er …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Mobility | 10000 cm2/V-s | C |
Thickness | 500–100000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,165,679Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. [0034] Next, graphene is transferred off of the copper film using suitable techniques. This can be achieved without applying any additional layers that …
FIG. 2. Following release from curling, there were no visible signs of damage, and electrical properties of the graphene were measured before and aft er …
FIG. 3, which includes patterned graphene-on-polymer workpieces placed onto a glass slide for storage and later use. Additional workpieces have been fabricated …
FIG. 5(b) shows a typical I-Vg of a sample after it has been curled around an object with a radius of 0.5 mm. Using a standard model, the inferred mobility is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
-28. Canceled
Canceled
A method of forming a patterned structure, the method comprising: forming a graphene layer on a substrate; forming a patterned la y er coupled to the graphene la y er y; and separating the graphene layer from the substrate according to a pattern of the patterned layer. Currently amended
The method of claim 29, wherein the substrate is comprises a catalytic film. Currently amended
The method of claim 29, wherein said graphene layer comprises a graphene monolayer or continuous la y ers of graphene. Currently amended
The method of claim 29, wherein forming the g raphene layer on a the substrate omprises depositing the graphene lay er using chemical vapor deposition. Currently amended
The method of claim 29, wherein forming the patterned layer comprises inkjet printing, laser printing, 3D printing, screen printing, flexography, gravure, offset lithography, nanoimprint lithography, or any combination thereof. Currently amended
The method of claim 29 30, wherein the catalytic film comprises Cu, Ni or Pt foil. Currently amended
The method of claim 29, wherein the patterned layer is formed on the graphene layer, c. Currently amended
The method of claim 29, wherein separating the graphene layer from the substrate comprises etching of the substrate, a bubbling transfer process, a mechanical separation process, or a combination thereof. Currently amended
The method of claim 29, further comprising: forming a layer of material on the patterned layer prior to separating the graphene layer from the substrate,,,. Currently amended
The method of claim 29, further comprising: attaching the separated graphene layer onto a base substrate. Currently amended
The method of claim 29, wherein separating the graphene layer from the substrate comprises releasing portions of the graphene layer according to the pattern of the patterned layer. New
The method of claim 29, wherein the graphene layer is supported by the patterned layer after the graphene layer is separated from the substrate. New
The method of claim 29, wherein separating the graphene layer from the substrate comprises decoupling the substrate from the graphene layer. New
The method of claim 29, wherein forming the patterned layer comprises selective sintering of a material. New
The method of claim 29, wherein forming the patterned layer comprises selectively depositing a liquid binding material in a powder-bed layer. New
A patterned structure comprising: f) a patterned layer; and b) a graphene la y er coupled to the patterned layer, wherein the graphene la y er is configured to be separated from a substrate according to a pattern of the patterned la yer to thereby pattern the graphene layer. Currently amended
The patterned structure of claim 41,, wherein the patterned layer provides support for the graphene layer that is separated from the substrate. Currently amended
The patterned structure of claim 41, wherein the patterned structure is a free-standing structure that is separated from the substrate. New
The patterned structure of claim 41, wherein the patterned structure is configured to be coupled to a base substrate. New
The patterned structure of claim 4 1 42, wherein the separated graphene layer has the same pattern as the patterned layer,,,,,,,,,,,,,,,,,,,,. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
patterned graphene structure on flexible substrate
Materials described outside the worked examples.
graphene
C
patterned layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. Following release from curling, there were no visible signs of damage, and electrical properties of the graphene were measured before and aft er …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Mobility | 10000 cm2/V-s | C |
Thickness | 500–100000 nm |
Related documents with shared materials, methods, properties, or citations.
catalytic film
copper foil
Cu
nickel foil
Ni
platinum foil
Pt
printer toner
few-layer graphene
boron nitride
BN
molybdenum disulfide
MoS₂
transition metal dichalcogenides
FIG. 5(b) shows a typical I-Vg of a sample after it has been curled around an object with a radius of 0.5 mm. Using a standard model, the inferred mobility is …
| — |
Thickness | ≤ 1 mm | — |
Thickness | ≥ 5000 cm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≤ 5 µm | — |
Thickness | ≥ 5500 cm | — |
catalytic film
copper foil
Cu
nickel foil
Ni
platinum foil
Pt
printer toner
few-layer graphene
boron nitride
BN
molybdenum disulfide
MoS₂
transition metal dichalcogenides
FIG. 5(b) shows a typical I-Vg of a sample after it has been curled around an object with a radius of 0.5 mm. Using a standard model, the inferred mobility is …
| — |
Thickness | ≤ 1 mm | — |
Thickness | ≥ 5000 cm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≤ 5 µm | — |
Thickness | ≥ 5500 cm | — |
catalytic film
copper foil
Cu
nickel foil
Ni
platinum foil
Pt
printer toner
few-layer graphene
boron nitride
BN
molybdenum disulfide
MoS₂
transition metal dichalcogenides
FIG. 5(b) shows a typical I-Vg of a sample after it has been curled around an object with a radius of 0.5 mm. Using a standard model, the inferred mobility is …
| — |
Thickness | ≤ 1 mm | — |
Thickness | ≥ 5000 cm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≤ 5 µm | — |
Thickness | ≥ 5500 cm | — |
catalytic film
copper foil
Cu
nickel foil
Ni
platinum foil
Pt
printer toner
few-layer graphene
boron nitride
BN
molybdenum disulfide
MoS₂
transition metal dichalcogenides
FIG. 5(b) shows a typical I-Vg of a sample after it has been curled around an object with a radius of 0.5 mm. Using a standard model, the inferred mobility is …
| — |
Thickness | ≤ 1 mm | — |
Thickness | ≥ 5000 cm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≤ 5 µm | — |
Thickness | ≥ 5500 cm | — |