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Patent
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Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is (a) Auger spectra acquired after deposition of 0.4 ML graphene (dashed line) and 3.0 ML graphene (solid line), inset-detail of C(KVV) spectral region …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a composition of matter comprising macroscopically continuous layers of graphene on a metal oxide surface, wherein said method comprises steps of: forming a layer of a metal selected from the group consisting of cobalt, chrome, magnesium, aluminum and copper having a first major surface; annealing said first major surface in oxygen to form an oxide of said metal on said first major surface; and forming more than one layer of macroscopically continuous graphene on said metal oxide layer by carbon molecular beam epitaxy (MBE) thereby creating an oxide/graphene interface between said metal oxide layer and a first layer of said graphene, wherein said oxide/graphene substrate interface is incommensurate, without reconstruction of the metal oxide surface, thus yielding C6v symmetry in said first layer of graphene.
The method of Claim 1, wherein said step of annealing and said step of forming more than one layer of macroscopically continuous graphene are both conducted at temperatures of not more than one thousand degrees Kelvin.
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A composition of matter comprising a macroscopically continuous multilayer film of graphene on a magnetically polarizable metal oxide creating a graphene/oxide interface between a surface of said metal oxide layer and a first layer of graphene, wherein said metal oxide is in turn on a room temperature ferromagnet wherein the graphene/oxide interface is incommensurate, without reconstruction of the said metal oxide surface, thus yielding C 6 v symmetry in a first layer of said graphene.
The composition of matter of Claim 9, wherein consisting of cobalt oxide, chrome oxide, aluminum aluminum oxide and copper oxide.
The composition of matter of Claim 9, wherein graphene field effect transistor, a coherent spin or switch. said metal oxide is selected from the group oxide, magnesium oxide, nickel oxide, said composition of matter comprises a field effect transistor, a magnetic tunnel junction
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
multilayer graphene on metal oxide on metal
multilayer graphene on magnetically polarizable metal oxide on room temperature ferromagnet
Materials described outside the worked examples.
cobalt
Co
chrome
Cr
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene lattice constant from LEED | 2.5 Å | C |
Co3O4(111) O-O nearest neighbor surface distance from LEED |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is (a) Auger spectra acquired after deposition of 0.4 ML graphene (dashed line) and 3.0 ML graphene (solid line), inset-detail of C(KVV) spectral region …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a composition of matter comprising macroscopically continuous layers of graphene on a metal oxide surface, wherein said method comprises steps of: forming a layer of a metal selected from the group consisting of cobalt, chrome, magnesium, aluminum and copper having a first major surface; annealing said first major surface in oxygen to form an oxide of said metal on said first major surface; and forming more than one layer of macroscopically continuous graphene on said metal oxide layer by carbon molecular beam epitaxy (MBE) thereby creating an oxide/graphene interface between said metal oxide layer and a first layer of said graphene, wherein said oxide/graphene substrate interface is incommensurate, without reconstruction of the metal oxide surface, thus yielding C6v symmetry in said first layer of graphene.
The method of Claim 1, wherein said step of annealing and said step of forming more than one layer of macroscopically continuous graphene are both conducted at temperatures of not more than one thousand degrees Kelvin.
. canceled
. canceled
. canceled
. canceled
. canceled
. canceled
A composition of matter comprising a macroscopically continuous multilayer film of graphene on a magnetically polarizable metal oxide creating a graphene/oxide interface between a surface of said metal oxide layer and a first layer of graphene, wherein said metal oxide is in turn on a room temperature ferromagnet wherein the graphene/oxide interface is incommensurate, without reconstruction of the said metal oxide surface, thus yielding C 6 v symmetry in a first layer of said graphene.
The composition of matter of Claim 9, wherein consisting of cobalt oxide, chrome oxide, aluminum aluminum oxide and copper oxide.
The composition of matter of Claim 9, wherein graphene field effect transistor, a coherent spin or switch. said metal oxide is selected from the group oxide, magnesium oxide, nickel oxide, said composition of matter comprises a field effect transistor, a magnetic tunnel junction
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
multilayer graphene on metal oxide on metal
multilayer graphene on magnetically polarizable metal oxide on room temperature ferromagnet
Materials described outside the worked examples.
cobalt
Co
chrome
Cr
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene lattice constant from LEED | 2.5 Å | C |
Co3O4(111) O-O nearest neighbor surface distance from LEED |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is (a) Auger spectra acquired after deposition of 0.4 ML graphene (dashed line) and 3.0 ML graphene (solid line), inset-detail of C(KVV) spectral region …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a composition of matter comprising macroscopically continuous layers of graphene on a metal oxide surface, wherein said method comprises steps of: forming a layer of a metal selected from the group consisting of cobalt, chrome, magnesium, aluminum and copper having a first major surface; annealing said first major surface in oxygen to form an oxide of said metal on said first major surface; and forming more than one layer of macroscopically continuous graphene on said metal oxide layer by carbon molecular beam epitaxy (MBE) thereby creating an oxide/graphene interface between said metal oxide layer and a first layer of said graphene, wherein said oxide/graphene substrate interface is incommensurate, without reconstruction of the metal oxide surface, thus yielding C6v symmetry in said first layer of graphene.
The method of Claim 1, wherein said step of annealing and said step of forming more than one layer of macroscopically continuous graphene are both conducted at temperatures of not more than one thousand degrees Kelvin.
. canceled
. canceled
. canceled
. canceled
. canceled
. canceled
A composition of matter comprising a macroscopically continuous multilayer film of graphene on a magnetically polarizable metal oxide creating a graphene/oxide interface between a surface of said metal oxide layer and a first layer of graphene, wherein said metal oxide is in turn on a room temperature ferromagnet wherein the graphene/oxide interface is incommensurate, without reconstruction of the said metal oxide surface, thus yielding C 6 v symmetry in a first layer of said graphene.
The composition of matter of Claim 9, wherein consisting of cobalt oxide, chrome oxide, aluminum aluminum oxide and copper oxide.
The composition of matter of Claim 9, wherein graphene field effect transistor, a coherent spin or switch. said metal oxide is selected from the group oxide, magnesium oxide, nickel oxide, said composition of matter comprises a field effect transistor, a magnetic tunnel junction
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
multilayer graphene on metal oxide on metal
multilayer graphene on magnetically polarizable metal oxide on room temperature ferromagnet
Materials described outside the worked examples.
cobalt
Co
chrome
Cr
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene lattice constant from LEED | 2.5 Å | C |
Co3O4(111) O-O nearest neighbor surface distance from LEED |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is (a) Auger spectra acquired after deposition of 0.4 ML graphene (dashed line) and 3.0 ML graphene (solid line), inset-detail of C(KVV) spectral region …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a composition of matter comprising macroscopically continuous layers of graphene on a metal oxide surface, wherein said method comprises steps of: forming a layer of a metal selected from the group consisting of cobalt, chrome, magnesium, aluminum and copper having a first major surface; annealing said first major surface in oxygen to form an oxide of said metal on said first major surface; and forming more than one layer of macroscopically continuous graphene on said metal oxide layer by carbon molecular beam epitaxy (MBE) thereby creating an oxide/graphene interface between said metal oxide layer and a first layer of said graphene, wherein said oxide/graphene substrate interface is incommensurate, without reconstruction of the metal oxide surface, thus yielding C6v symmetry in said first layer of graphene.
The method of Claim 1, wherein said step of annealing and said step of forming more than one layer of macroscopically continuous graphene are both conducted at temperatures of not more than one thousand degrees Kelvin.
. canceled
. canceled
. canceled
. canceled
. canceled
. canceled
A composition of matter comprising a macroscopically continuous multilayer film of graphene on a magnetically polarizable metal oxide creating a graphene/oxide interface between a surface of said metal oxide layer and a first layer of graphene, wherein said metal oxide is in turn on a room temperature ferromagnet wherein the graphene/oxide interface is incommensurate, without reconstruction of the said metal oxide surface, thus yielding C 6 v symmetry in a first layer of said graphene.
The composition of matter of Claim 9, wherein consisting of cobalt oxide, chrome oxide, aluminum aluminum oxide and copper oxide.
The composition of matter of Claim 9, wherein graphene field effect transistor, a coherent spin or switch. said metal oxide is selected from the group oxide, magnesium oxide, nickel oxide, said composition of matter comprises a field effect transistor, a magnetic tunnel junction
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
multilayer graphene on metal oxide on metal
multilayer graphene on magnetically polarizable metal oxide on room temperature ferromagnet
Materials described outside the worked examples.
cobalt
Co
chrome
Cr
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene lattice constant from LEED | 2.5 Å | C |
Co3O4(111) O-O nearest neighbor surface distance from LEED |
Related documents with shared materials, methods, properties, or citations.
graphene field effect transistor
magnetic tunnel junction
magnesium
Mg
aluminum
Al
copper
Cu
graphene
C
magnetically polarizable metal oxide
room temperature ferromagnet
cobalt oxide
Co₃O₄
chrome oxide
aluminum oxide
Al₂O₃
copper oxide
magnesium oxide
MgO
nickel oxide
NiO
Co₃O₄ |
graphene domain size from LEED | 1800 Å | C |
C(1s) XPS binding energy for 3 ML graphene on Co3O4(111) | 284.9 eV | C |
Co(2p3/2) XPS binding energy | 778.3 eV | Co₃O₄ |
O(1s) XPS binding energy | 530.9 eV | Co₃O₄ |
π to π*/π plasmon feature in imaginary dielectric response from spectroscopic ellipsometry | 5.5 eV | C |
Temperature | ≤ 1 K | — |
— | ≤ 150 eV | — |
Temperature | ≥ 1800 K | — |
Temperature | ≤ 1273 K | — |
graphene field effect transistor
magnetic tunnel junction
magnesium
Mg
aluminum
Al
copper
Cu
graphene
C
magnetically polarizable metal oxide
room temperature ferromagnet
cobalt oxide
Co₃O₄
chrome oxide
aluminum oxide
Al₂O₃
copper oxide
magnesium oxide
MgO
nickel oxide
NiO
Co₃O₄ |
graphene domain size from LEED | 1800 Å | C |
C(1s) XPS binding energy for 3 ML graphene on Co3O4(111) | 284.9 eV | C |
Co(2p3/2) XPS binding energy | 778.3 eV | Co₃O₄ |
O(1s) XPS binding energy | 530.9 eV | Co₃O₄ |
π to π*/π plasmon feature in imaginary dielectric response from spectroscopic ellipsometry | 5.5 eV | C |
Temperature | ≤ 1 K | — |
— | ≤ 150 eV | — |
Temperature | ≥ 1800 K | — |
Temperature | ≤ 1273 K | — |
graphene field effect transistor
magnetic tunnel junction
magnesium
Mg
aluminum
Al
copper
Cu
graphene
C
magnetically polarizable metal oxide
room temperature ferromagnet
cobalt oxide
Co₃O₄
chrome oxide
aluminum oxide
Al₂O₃
copper oxide
magnesium oxide
MgO
nickel oxide
NiO
Co₃O₄ |
graphene domain size from LEED | 1800 Å | C |
C(1s) XPS binding energy for 3 ML graphene on Co3O4(111) | 284.9 eV | C |
Co(2p3/2) XPS binding energy | 778.3 eV | Co₃O₄ |
O(1s) XPS binding energy | 530.9 eV | Co₃O₄ |
π to π*/π plasmon feature in imaginary dielectric response from spectroscopic ellipsometry | 5.5 eV | C |
Temperature | ≤ 1 K | — |
— | ≤ 150 eV | — |
Temperature | ≥ 1800 K | — |
Temperature | ≤ 1273 K | — |
graphene field effect transistor
magnetic tunnel junction
magnesium
Mg
aluminum
Al
copper
Cu
graphene
C
magnetically polarizable metal oxide
room temperature ferromagnet
cobalt oxide
Co₃O₄
chrome oxide
aluminum oxide
Al₂O₃
copper oxide
magnesium oxide
MgO
nickel oxide
NiO
Co₃O₄ |
graphene domain size from LEED | 1800 Å | C |
C(1s) XPS binding energy for 3 ML graphene on Co3O4(111) | 284.9 eV | C |
Co(2p3/2) XPS binding energy | 778.3 eV | Co₃O₄ |
O(1s) XPS binding energy | 530.9 eV | Co₃O₄ |
π to π*/π plasmon feature in imaginary dielectric response from spectroscopic ellipsometry | 5.5 eV | C |
Temperature | ≤ 1 K | — |
— | ≤ 150 eV | — |
Temperature | ≥ 1800 K | — |
Temperature | ≤ 1273 K | — |