A method, comprising: forming a graphene layer defining a working surface; forming a polyvinyl alcohol (PVA) layer upon the working surface of the grapheme layer; activating the PVA layer to provide a functionalized portion of the PVA layer; forming a dielectric layer upon the functionalized portion of the PVA layer; [[and]] forming a first electrode located upon and conductively coupled to the working surface of the graphene laver; and layeir forming a second electrode located upon and conductively coup led to the working surface of the gr a phene la y er, the second electrode formed at a location laterally separated from the first electrode along the working surface of the gr a phene la ver; wherein at least a portion of the PVA la y er is located upon the working surface of the gra phene la y er between the first and second electrodes.

canceled

The method of claim [[7,]] L wherein the dielectric layer is formed upon the first and second electrodes and is formed laterally between the first and second electrodes upon the functionalized portion of the PVA layer.

The method of claim [[7,]] L comprising: forming an oxide layer upon a conductive substrate; wherein the graphene layer is formed upon the oxide layer; wherein at least a portion of the graphene layer, at least a portion of the PVA layer, at least a portion of the dielectric layer, and at least a portion of the respective first and second electrodes are formed to establish a field-effect transistor; wherein the first and second electrodes are formed to establish respective source electrode and a respective drain electrode of the field-effect transistor; and wherein the conductive substrate is formed to provide a bottom-gate electrode.

A method, comprising: forming an oxide layer upon a conductive substrate; forming a graphene layer upon the oxide layer, the graphene layer defining a working surface; forming a polyvinyl alcohol (PVA) layer upon the working surface of the grapheme layer; activating the PVA layer to provide a functionalized portion of the PVA layer; depositing a dielectric layer upon the functionalized portion of the PVA layer using atomic layer deposition (ALD); forming a first electrode located upon and conductively coupled to the working surface of the graphene layer; and forming a second electrode located upon and conductive coupled to the working surface of the graphene layer, the second electrode formed at a location laterally separated from the first electrode along the working surface of the graphene layer.

A method, comprising: forming an oxide layer upon a conductive substrate; forming a graphene layer upon the oxide layer, the graphene layer defining a working surface; forming a polyvinyl alcohol (PVA) layer upon the working surface of the grapheme layer; activating the PVA layer to provide a functionalized portion of the PVA layer; [[and]] depositing a dielectric layer comprising haf n ium oxide upon the functionalized portion of the PVA layer using atomic layer deposition (ALD) (A-L-D) forming a first electrode located upon and conductively coup led to the working surface of the g raphene la ver; and forming a second electrode located upon and conductive coupled to the working surface of the gr a phene la y er, the second electrode formed at a location laterally separated from the first electrode along the working surface of the gr a phene la yer.

A method, comprising: forming a graphene layer defining a working surface; forming a polyvinyl alcohol (PVA) layer upon the working surface of the grapheme layer; activating the PVA layer to provide a functionalized portion of the PVA layer; forming a dielectric layer upon the functionalized portion of the PVA layer; [[and]] forming a first electrode located upon and conductively coupled to the working surface of the graphene laver; and layeir forming a second electrode located upon and conductively coup led to the working surface of the gr a phene la y er, the second electrode formed at a location laterally separated from the first electrode along the working surface of the gr a phene la ver; wherein at least a portion of the PVA la y er is located upon the working surface of the gra phene la y er between the first and second electrodes.

canceled

The method of claim [[7,]] L wherein the dielectric layer is formed upon the first and second electrodes and is formed laterally between the first and second electrodes upon the functionalized portion of the PVA layer.

The method of claim [[7,]] L comprising: forming an oxide layer upon a conductive substrate; wherein the graphene layer is formed upon the oxide layer; wherein at least a portion of the graphene layer, at least a portion of the PVA layer, at least a portion of the dielectric layer, and at least a portion of the respective first and second electrodes are formed to establish a field-effect transistor; wherein the first and second electrodes are formed to establish respective source electrode and a respective drain electrode of the field-effect transistor; and wherein the conductive substrate is formed to provide a bottom-gate electrode.

A method, comprising: forming an oxide layer upon a conductive substrate; forming a graphene layer upon the oxide layer, the graphene layer defining a working surface; forming a polyvinyl alcohol (PVA) layer upon the working surface of the grapheme layer; activating the PVA layer to provide a functionalized portion of the PVA layer; depositing a dielectric layer upon the functionalized portion of the PVA layer using atomic layer deposition (ALD); forming a first electrode located upon and conductively coupled to the working surface of the graphene layer; and forming a second electrode located upon and conductive coupled to the working surface of the graphene layer, the second electrode formed at a location laterally separated from the first electrode along the working surface of the graphene layer.

A method, comprising: forming an oxide layer upon a conductive substrate; forming a graphene layer upon the oxide layer, the graphene layer defining a working surface; forming a polyvinyl alcohol (PVA) layer upon the working surface of the grapheme layer; activating the PVA layer to provide a functionalized portion of the PVA layer; [[and]] depositing a dielectric layer comprising haf n ium oxide upon the functionalized portion of the PVA layer using atomic layer deposition (ALD) (A-L-D) forming a first electrode located upon and conductively coup led to the working surface of the g raphene la ver; and forming a second electrode located upon and conductive coupled to the working surface of the gr a phene la y er, the second electrode formed at a location laterally separated from the first electrode along the working surface of the gr a phene la yer.

A method, comprising: forming a graphene layer defining a working surface; forming a polyvinyl alcohol (PVA) layer upon the working surface of the grapheme layer; activating the PVA layer to provide a functionalized portion of the PVA layer; forming a dielectric layer upon the functionalized portion of the PVA layer; [[and]] forming a first electrode located upon and conductively coupled to the working surface of the graphene laver; and layeir forming a second electrode located upon and conductively coup led to the working surface of the gr a phene la y er, the second electrode formed at a location laterally separated from the first electrode along the working surface of the gr a phene la ver; wherein at least a portion of the PVA la y er is located upon the working surface of the gra phene la y er between the first and second electrodes.

canceled

The method of claim [[7,]] L wherein the dielectric layer is formed upon the first and second electrodes and is formed laterally between the first and second electrodes upon the functionalized portion of the PVA layer.

The method of claim [[7,]] L comprising: forming an oxide layer upon a conductive substrate; wherein the graphene layer is formed upon the oxide layer; wherein at least a portion of the graphene layer, at least a portion of the PVA layer, at least a portion of the dielectric layer, and at least a portion of the respective first and second electrodes are formed to establish a field-effect transistor; wherein the first and second electrodes are formed to establish respective source electrode and a respective drain electrode of the field-effect transistor; and wherein the conductive substrate is formed to provide a bottom-gate electrode.

A method, comprising: forming an oxide layer upon a conductive substrate; forming a graphene layer upon the oxide layer, the graphene layer defining a working surface; forming a polyvinyl alcohol (PVA) layer upon the working surface of the grapheme layer; activating the PVA layer to provide a functionalized portion of the PVA layer; depositing a dielectric layer upon the functionalized portion of the PVA layer using atomic layer deposition (ALD); forming a first electrode located upon and conductively coupled to the working surface of the graphene layer; and forming a second electrode located upon and conductive coupled to the working surface of the graphene layer, the second electrode formed at a location laterally separated from the first electrode along the working surface of the graphene layer.

A method, comprising: forming an oxide layer upon a conductive substrate; forming a graphene layer upon the oxide layer, the graphene layer defining a working surface; forming a polyvinyl alcohol (PVA) layer upon the working surface of the grapheme layer; activating the PVA layer to provide a functionalized portion of the PVA layer; [[and]] depositing a dielectric layer comprising haf n ium oxide upon the functionalized portion of the PVA layer using atomic layer deposition (ALD) (A-L-D) forming a first electrode located upon and conductively coup led to the working surface of the g raphene la ver; and forming a second electrode located upon and conductive coupled to the working surface of the gr a phene la y er, the second electrode formed at a location laterally separated from the first electrode along the working surface of the gr a phene la yer.

A method, comprising: forming a graphene layer defining a working surface; forming a polyvinyl alcohol (PVA) layer upon the working surface of the grapheme layer; activating the PVA layer to provide a functionalized portion of the PVA layer; forming a dielectric layer upon the functionalized portion of the PVA layer; [[and]] forming a first electrode located upon and conductively coupled to the working surface of the graphene laver; and layeir forming a second electrode located upon and conductively coup led to the working surface of the gr a phene la y er, the second electrode formed at a location laterally separated from the first electrode along the working surface of the gr a phene la ver; wherein at least a portion of the PVA la y er is located upon the working surface of the gra phene la y er between the first and second electrodes.

canceled

The method of claim [[7,]] L wherein the dielectric layer is formed upon the first and second electrodes and is formed laterally between the first and second electrodes upon the functionalized portion of the PVA layer.

The method of claim [[7,]] L comprising: forming an oxide layer upon a conductive substrate; wherein the graphene layer is formed upon the oxide layer; wherein at least a portion of the graphene layer, at least a portion of the PVA layer, at least a portion of the dielectric layer, and at least a portion of the respective first and second electrodes are formed to establish a field-effect transistor; wherein the first and second electrodes are formed to establish respective source electrode and a respective drain electrode of the field-effect transistor; and wherein the conductive substrate is formed to provide a bottom-gate electrode.

A method, comprising: forming an oxide layer upon a conductive substrate; forming a graphene layer upon the oxide layer, the graphene layer defining a working surface; forming a polyvinyl alcohol (PVA) layer upon the working surface of the grapheme layer; activating the PVA layer to provide a functionalized portion of the PVA layer; depositing a dielectric layer upon the functionalized portion of the PVA layer using atomic layer deposition (ALD); forming a first electrode located upon and conductively coupled to the working surface of the graphene layer; and forming a second electrode located upon and conductive coupled to the working surface of the graphene layer, the second electrode formed at a location laterally separated from the first electrode along the working surface of the graphene layer.

A method, comprising: forming an oxide layer upon a conductive substrate; forming a graphene layer upon the oxide layer, the graphene layer defining a working surface; forming a polyvinyl alcohol (PVA) layer upon the working surface of the grapheme layer; activating the PVA layer to provide a functionalized portion of the PVA layer; [[and]] depositing a dielectric layer comprising haf n ium oxide upon the functionalized portion of the PVA layer using atomic layer deposition (ALD) (A-L-D) forming a first electrode located upon and conductively coup led to the working surface of the g raphene la ver; and forming a second electrode located upon and conductive coupled to the working surface of the gr a phene la y er, the second electrode formed at a location laterally separated from the first electrode along the working surface of the gr a phene la yer.