Patent
US 10,672,896GaN-based bidirectional switch device
Wanjun CHEN
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,672,896Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 (b). In this new configuration, the current only flows through a single device, and shorter current path will be beneficial for reducing the on-state …
FIG. 4), when the gate vol tag e is 1 0 V and the cu rre nt is 5 A, the on-state resistance of the device is 0.997 m a-cr 2. Figure 5 is the bidirectional …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The A I GaN barrier layer of source and d ri in is etched as far as possible.
A passivation layer is deposited on the surface of A I GaN layer to fur ther red uce leakage and improve perfor m ance.
The Schottky-con ta ct a n d the struct ur e of insulated g ate are separated by ins ulating medium-and the qu al ity of media directly affects the p erfo rma nce of the device. The basic wor ki ng p ri nciple of this device is as below. Firstly, each insulated gate structure ne ar Schottky-con tac t controls the band s tr ucture of the Scho tt ky-contact to change the wor k ing state of the device, realizing the bidi re ctional switch's ability of bidirectional conducting and blocking. When the gate is applied with a positive vol ta g e, the thickness of the bar ri er ne ar Schottky is thinned (figure 3), the probability of the elec t ro n tunneling increases, and thus the device can have the current c har acteristics similar to ohm's con tac t. When the gate is applied with a negative vol tag e, the thickness of the barrier near Schottky becomesthicker, the pro bability of electron tunneli n SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.7.33.1259.2779.1298.2791.svg 0.04 0.13 Chemistry Black and white n is reduced, and the electron is almost im p ossible to pass the barrier. Therefore, the device can realize the bloc k ing ability. When only one gate is app lied with a positive vol ta ge, the bidirectional switch can only be used in one direction to conduct the current, and in the other direction it shows the ability of blocking. The invention uses the Schottky junction and insul ated SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.8.1.908.198.919.221.svg 0.077 0.037 Chemistry Black and white SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.8.2.899.251.911.274.svg 0.077 0.04 Chemistry Black and white SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.8.3.887.305.922.382.svg 0.257 0.117 Chemistry Black and white ga te s tr u cture to supp re ss the rev ers e leakage of the d e vice. The invention increases the depletion capacity of the car ri er under the gate by reducing the thickness of the bar r ier layer under the insulated g a te. The simulation ci r cuit diagr a m as shown in figure 5. The blocking mechanism of the bidirectional switch can be expl a ined as follows. When the voltage is low, the Schottky-cont ac ting ba rr ier of source and d r ain blocks the curr ent. When the volt a g e increases, the c arriers at the bottom of the gate near Schottky begins to r un out. When the carriers und er the gate get co m pletely exhau sted, the c arri er s ca nn ot pass through the gate cha nn el, then the insulated g ate blocks cur ren t. Reducing the thickness of the barrier layer can increase the blocking ability of the device. Fig.4 shows the bidirectional conduction characteristics of the present GaN-based bidirection al switch. Fig. 5 shows the bidirection al blocking characteristics of the GaN-based bidirectional switch. The device of this invention is co m patible with the tr adi tional CMOS process and can be ma de by using the tr a ditional CMOS process line. What needs to be specified specifically is the following.
The blocking ability of the device can be increased by increasing the depth of the f i st partial l y recessed sh al low tr ench 4 and the second partially recessed sh allow trench 5. In the p re sent invention, the fo l lowing two schemes can be used to prepare the insulating medium materials. (a) The die lectri c mate rial (such as A 1 2 O 3, Hf₀ 2 and Ti O 2) is prepared by atomic layer deposition (ALD). The film grown by ALD is self-limiting, and the thickness and chemical c om p osition of the film can be accurately controlled. The deposited film has good unifo rmi ity and confo rm al prop e rt ies. The co mp osite l amin ates, such as HiO 2/A₁ 2 O 3, etc, should be considered. (b) A variety of single-layer, multi-layer, and various laminated structures (such SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.9.1.908.198.919.221.svg 0.077 0.037 Chemistry Black and white SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.9.2.899.251.911.274.svg 0.077 0.04 Chemistry Black and white SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.9.3.887.305.922.382.svg 0.257 0.117 Chemistry Black and white as Ga 2 O 3, A 1 2 0 3, A 1GaO or A lGaO/A₁ 2 0 3) ar e pre pared though MOCVD equipment to prepare high p rforman ce insulating grid media. MOCVD method has the advant ag es of dense fi lm -fo rm ing state of diele c t ix c material, accurate thickness con tro l, easily fo rm ing hybrid fil m, and good repeatability of multilayer fi lm, especially the large controlled space in i n terface state controlling. The manufac tur ing pro cess of the invention is shown in fi gure 6- fi gure 11 and mainly co mpri ses the following steps. Figure 6 shows the preparation of het er ojunction with subs tr ate and barrier layer. Figure 7 shows etching barrier layer to G a N buffer la yer in sou rc e and dr ain contact. Figure 8 shows passivating opening and pro du cing source and drain Schott k y-con tact metal. Figures 9 a n d show providing openings in the first recessed t re nch gate and the second recessed trench gate and depositing insula ting dielec tr ic. Figure 11 shows deposition of gate metal. Device simulation so ftw are Senta uru s is used to primarily simulate and analyze the structure of the invention. In this simulation, gate length is 1 p n, the medium thickness between the gate and source is 10 nm, the distance between the two gates is 10 pm, the width of the gate is 10000 p m, the thickness of the GaN buf f er layer is 3 sm, the thickness of Al o. 26 Ga o. 7 a N barrier layer is 25 nm, and the gate metal working fun ction is 4.5 eV. The Schottky barrier of sou rc e and d ra in are 1.0 eV. It can be seen from the curve of the bidirection al conducting characteristics (FIG. 4), when the gate vol tag e is 1 0 V and the cu rre nt is 5 A, the on-state resistance of the device is 0.997 m a-cr
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based bidirectional switch
Materials described outside the worked examples.
AlGaN barrier layer
AlGaN
GaN buffer layer
GaN
passivation layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
on-state resistance at Vg=10V, I=5A | 0.997 mΩ·cm² | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,672,896Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 (b). In this new configuration, the current only flows through a single device, and shorter current path will be beneficial for reducing the on-state …
FIG. 4), when the gate vol tag e is 1 0 V and the cu rre nt is 5 A, the on-state resistance of the device is 0.997 m a-cr 2. Figure 5 is the bidirectional …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The A I GaN barrier layer of source and d ri in is etched as far as possible.
A passivation layer is deposited on the surface of A I GaN layer to fur ther red uce leakage and improve perfor m ance.
The Schottky-con ta ct a n d the struct ur e of insulated g ate are separated by ins ulating medium-and the qu al ity of media directly affects the p erfo rma nce of the device. The basic wor ki ng p ri nciple of this device is as below. Firstly, each insulated gate structure ne ar Schottky-con tac t controls the band s tr ucture of the Scho tt ky-contact to change the wor k ing state of the device, realizing the bidi re ctional switch's ability of bidirectional conducting and blocking. When the gate is applied with a positive vol ta g e, the thickness of the bar ri er ne ar Schottky is thinned (figure 3), the probability of the elec t ro n tunneling increases, and thus the device can have the current c har acteristics similar to ohm's con tac t. When the gate is applied with a negative vol tag e, the thickness of the barrier near Schottky becomesthicker, the pro bability of electron tunneli n SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.7.33.1259.2779.1298.2791.svg 0.04 0.13 Chemistry Black and white n is reduced, and the electron is almost im p ossible to pass the barrier. Therefore, the device can realize the bloc k ing ability. When only one gate is app lied with a positive vol ta ge, the bidirectional switch can only be used in one direction to conduct the current, and in the other direction it shows the ability of blocking. The invention uses the Schottky junction and insul ated SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.8.1.908.198.919.221.svg 0.077 0.037 Chemistry Black and white SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.8.2.899.251.911.274.svg 0.077 0.04 Chemistry Black and white SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.8.3.887.305.922.382.svg 0.257 0.117 Chemistry Black and white ga te s tr u cture to supp re ss the rev ers e leakage of the d e vice. The invention increases the depletion capacity of the car ri er under the gate by reducing the thickness of the bar r ier layer under the insulated g a te. The simulation ci r cuit diagr a m as shown in figure 5. The blocking mechanism of the bidirectional switch can be expl a ined as follows. When the voltage is low, the Schottky-cont ac ting ba rr ier of source and d r ain blocks the curr ent. When the volt a g e increases, the c arriers at the bottom of the gate near Schottky begins to r un out. When the carriers und er the gate get co m pletely exhau sted, the c arri er s ca nn ot pass through the gate cha nn el, then the insulated g ate blocks cur ren t. Reducing the thickness of the barrier layer can increase the blocking ability of the device. Fig.4 shows the bidirectional conduction characteristics of the present GaN-based bidirection al switch. Fig. 5 shows the bidirection al blocking characteristics of the GaN-based bidirectional switch. The device of this invention is co m patible with the tr adi tional CMOS process and can be ma de by using the tr a ditional CMOS process line. What needs to be specified specifically is the following.
The blocking ability of the device can be increased by increasing the depth of the f i st partial l y recessed sh al low tr ench 4 and the second partially recessed sh allow trench 5. In the p re sent invention, the fo l lowing two schemes can be used to prepare the insulating medium materials. (a) The die lectri c mate rial (such as A 1 2 O 3, Hf₀ 2 and Ti O 2) is prepared by atomic layer deposition (ALD). The film grown by ALD is self-limiting, and the thickness and chemical c om p osition of the film can be accurately controlled. The deposited film has good unifo rmi ity and confo rm al prop e rt ies. The co mp osite l amin ates, such as HiO 2/A₁ 2 O 3, etc, should be considered. (b) A variety of single-layer, multi-layer, and various laminated structures (such SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.9.1.908.198.919.221.svg 0.077 0.037 Chemistry Black and white SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.9.2.899.251.911.274.svg 0.077 0.04 Chemistry Black and white SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.9.3.887.305.922.382.svg 0.257 0.117 Chemistry Black and white as Ga 2 O 3, A 1 2 0 3, A 1GaO or A lGaO/A₁ 2 0 3) ar e pre pared though MOCVD equipment to prepare high p rforman ce insulating grid media. MOCVD method has the advant ag es of dense fi lm -fo rm ing state of diele c t ix c material, accurate thickness con tro l, easily fo rm ing hybrid fil m, and good repeatability of multilayer fi lm, especially the large controlled space in i n terface state controlling. The manufac tur ing pro cess of the invention is shown in fi gure 6- fi gure 11 and mainly co mpri ses the following steps. Figure 6 shows the preparation of het er ojunction with subs tr ate and barrier layer. Figure 7 shows etching barrier layer to G a N buffer la yer in sou rc e and dr ain contact. Figure 8 shows passivating opening and pro du cing source and drain Schott k y-con tact metal. Figures 9 a n d show providing openings in the first recessed t re nch gate and the second recessed trench gate and depositing insula ting dielec tr ic. Figure 11 shows deposition of gate metal. Device simulation so ftw are Senta uru s is used to primarily simulate and analyze the structure of the invention. In this simulation, gate length is 1 p n, the medium thickness between the gate and source is 10 nm, the distance between the two gates is 10 pm, the width of the gate is 10000 p m, the thickness of the GaN buf f er layer is 3 sm, the thickness of Al o. 26 Ga o. 7 a N barrier layer is 25 nm, and the gate metal working fun ction is 4.5 eV. The Schottky barrier of sou rc e and d ra in are 1.0 eV. It can be seen from the curve of the bidirection al conducting characteristics (FIG. 4), when the gate vol tag e is 1 0 V and the cu rre nt is 5 A, the on-state resistance of the device is 0.997 m a-cr
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based bidirectional switch
Materials described outside the worked examples.
AlGaN barrier layer
AlGaN
GaN buffer layer
GaN
passivation layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
on-state resistance at Vg=10V, I=5A | 0.997 mΩ·cm² | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,672,896Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 (b). In this new configuration, the current only flows through a single device, and shorter current path will be beneficial for reducing the on-state …
FIG. 4), when the gate vol tag e is 1 0 V and the cu rre nt is 5 A, the on-state resistance of the device is 0.997 m a-cr 2. Figure 5 is the bidirectional …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The A I GaN barrier layer of source and d ri in is etched as far as possible.
A passivation layer is deposited on the surface of A I GaN layer to fur ther red uce leakage and improve perfor m ance.
The Schottky-con ta ct a n d the struct ur e of insulated g ate are separated by ins ulating medium-and the qu al ity of media directly affects the p erfo rma nce of the device. The basic wor ki ng p ri nciple of this device is as below. Firstly, each insulated gate structure ne ar Schottky-con tac t controls the band s tr ucture of the Scho tt ky-contact to change the wor k ing state of the device, realizing the bidi re ctional switch's ability of bidirectional conducting and blocking. When the gate is applied with a positive vol ta g e, the thickness of the bar ri er ne ar Schottky is thinned (figure 3), the probability of the elec t ro n tunneling increases, and thus the device can have the current c har acteristics similar to ohm's con tac t. When the gate is applied with a negative vol tag e, the thickness of the barrier near Schottky becomesthicker, the pro bability of electron tunneli n SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.7.33.1259.2779.1298.2791.svg 0.04 0.13 Chemistry Black and white n is reduced, and the electron is almost im p ossible to pass the barrier. Therefore, the device can realize the bloc k ing ability. When only one gate is app lied with a positive vol ta ge, the bidirectional switch can only be used in one direction to conduct the current, and in the other direction it shows the ability of blocking. The invention uses the Schottky junction and insul ated SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.8.1.908.198.919.221.svg 0.077 0.037 Chemistry Black and white SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.8.2.899.251.911.274.svg 0.077 0.04 Chemistry Black and white SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.8.3.887.305.922.382.svg 0.257 0.117 Chemistry Black and white ga te s tr u cture to supp re ss the rev ers e leakage of the d e vice. The invention increases the depletion capacity of the car ri er under the gate by reducing the thickness of the bar r ier layer under the insulated g a te. The simulation ci r cuit diagr a m as shown in figure 5. The blocking mechanism of the bidirectional switch can be expl a ined as follows. When the voltage is low, the Schottky-cont ac ting ba rr ier of source and d r ain blocks the curr ent. When the volt a g e increases, the c arriers at the bottom of the gate near Schottky begins to r un out. When the carriers und er the gate get co m pletely exhau sted, the c arri er s ca nn ot pass through the gate cha nn el, then the insulated g ate blocks cur ren t. Reducing the thickness of the barrier layer can increase the blocking ability of the device. Fig.4 shows the bidirectional conduction characteristics of the present GaN-based bidirection al switch. Fig. 5 shows the bidirection al blocking characteristics of the GaN-based bidirectional switch. The device of this invention is co m patible with the tr adi tional CMOS process and can be ma de by using the tr a ditional CMOS process line. What needs to be specified specifically is the following.
The blocking ability of the device can be increased by increasing the depth of the f i st partial l y recessed sh al low tr ench 4 and the second partially recessed sh allow trench 5. In the p re sent invention, the fo l lowing two schemes can be used to prepare the insulating medium materials. (a) The die lectri c mate rial (such as A 1 2 O 3, Hf₀ 2 and Ti O 2) is prepared by atomic layer deposition (ALD). The film grown by ALD is self-limiting, and the thickness and chemical c om p osition of the film can be accurately controlled. The deposited film has good unifo rmi ity and confo rm al prop e rt ies. The co mp osite l amin ates, such as HiO 2/A₁ 2 O 3, etc, should be considered. (b) A variety of single-layer, multi-layer, and various laminated structures (such SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.9.1.908.198.919.221.svg 0.077 0.037 Chemistry Black and white SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.9.2.899.251.911.274.svg 0.077 0.04 Chemistry Black and white SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.9.3.887.305.922.382.svg 0.257 0.117 Chemistry Black and white as Ga 2 O 3, A 1 2 0 3, A 1GaO or A lGaO/A₁ 2 0 3) ar e pre pared though MOCVD equipment to prepare high p rforman ce insulating grid media. MOCVD method has the advant ag es of dense fi lm -fo rm ing state of diele c t ix c material, accurate thickness con tro l, easily fo rm ing hybrid fil m, and good repeatability of multilayer fi lm, especially the large controlled space in i n terface state controlling. The manufac tur ing pro cess of the invention is shown in fi gure 6- fi gure 11 and mainly co mpri ses the following steps. Figure 6 shows the preparation of het er ojunction with subs tr ate and barrier layer. Figure 7 shows etching barrier layer to G a N buffer la yer in sou rc e and dr ain contact. Figure 8 shows passivating opening and pro du cing source and drain Schott k y-con tact metal. Figures 9 a n d show providing openings in the first recessed t re nch gate and the second recessed trench gate and depositing insula ting dielec tr ic. Figure 11 shows deposition of gate metal. Device simulation so ftw are Senta uru s is used to primarily simulate and analyze the structure of the invention. In this simulation, gate length is 1 p n, the medium thickness between the gate and source is 10 nm, the distance between the two gates is 10 pm, the width of the gate is 10000 p m, the thickness of the GaN buf f er layer is 3 sm, the thickness of Al o. 26 Ga o. 7 a N barrier layer is 25 nm, and the gate metal working fun ction is 4.5 eV. The Schottky barrier of sou rc e and d ra in are 1.0 eV. It can be seen from the curve of the bidirection al conducting characteristics (FIG. 4), when the gate vol tag e is 1 0 V and the cu rre nt is 5 A, the on-state resistance of the device is 0.997 m a-cr
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based bidirectional switch
Materials described outside the worked examples.
AlGaN barrier layer
AlGaN
GaN buffer layer
GaN
passivation layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
on-state resistance at Vg=10V, I=5A | 0.997 mΩ·cm² | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,672,896Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 (b). In this new configuration, the current only flows through a single device, and shorter current path will be beneficial for reducing the on-state …
FIG. 4), when the gate vol tag e is 1 0 V and the cu rre nt is 5 A, the on-state resistance of the device is 0.997 m a-cr 2. Figure 5 is the bidirectional …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The A I GaN barrier layer of source and d ri in is etched as far as possible.
A passivation layer is deposited on the surface of A I GaN layer to fur ther red uce leakage and improve perfor m ance.
The Schottky-con ta ct a n d the struct ur e of insulated g ate are separated by ins ulating medium-and the qu al ity of media directly affects the p erfo rma nce of the device. The basic wor ki ng p ri nciple of this device is as below. Firstly, each insulated gate structure ne ar Schottky-con tac t controls the band s tr ucture of the Scho tt ky-contact to change the wor k ing state of the device, realizing the bidi re ctional switch's ability of bidirectional conducting and blocking. When the gate is applied with a positive vol ta g e, the thickness of the bar ri er ne ar Schottky is thinned (figure 3), the probability of the elec t ro n tunneling increases, and thus the device can have the current c har acteristics similar to ohm's con tac t. When the gate is applied with a negative vol tag e, the thickness of the barrier near Schottky becomesthicker, the pro bability of electron tunneli n SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.7.33.1259.2779.1298.2791.svg 0.04 0.13 Chemistry Black and white n is reduced, and the electron is almost im p ossible to pass the barrier. Therefore, the device can realize the bloc k ing ability. When only one gate is app lied with a positive vol ta ge, the bidirectional switch can only be used in one direction to conduct the current, and in the other direction it shows the ability of blocking. The invention uses the Schottky junction and insul ated SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.8.1.908.198.919.221.svg 0.077 0.037 Chemistry Black and white SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.8.2.899.251.911.274.svg 0.077 0.04 Chemistry Black and white SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.8.3.887.305.922.382.svg 0.257 0.117 Chemistry Black and white ga te s tr u cture to supp re ss the rev ers e leakage of the d e vice. The invention increases the depletion capacity of the car ri er under the gate by reducing the thickness of the bar r ier layer under the insulated g a te. The simulation ci r cuit diagr a m as shown in figure 5. The blocking mechanism of the bidirectional switch can be expl a ined as follows. When the voltage is low, the Schottky-cont ac ting ba rr ier of source and d r ain blocks the curr ent. When the volt a g e increases, the c arriers at the bottom of the gate near Schottky begins to r un out. When the carriers und er the gate get co m pletely exhau sted, the c arri er s ca nn ot pass through the gate cha nn el, then the insulated g ate blocks cur ren t. Reducing the thickness of the barrier layer can increase the blocking ability of the device. Fig.4 shows the bidirectional conduction characteristics of the present GaN-based bidirection al switch. Fig. 5 shows the bidirection al blocking characteristics of the GaN-based bidirectional switch. The device of this invention is co m patible with the tr adi tional CMOS process and can be ma de by using the tr a ditional CMOS process line. What needs to be specified specifically is the following.
The blocking ability of the device can be increased by increasing the depth of the f i st partial l y recessed sh al low tr ench 4 and the second partially recessed sh allow trench 5. In the p re sent invention, the fo l lowing two schemes can be used to prepare the insulating medium materials. (a) The die lectri c mate rial (such as A 1 2 O 3, Hf₀ 2 and Ti O 2) is prepared by atomic layer deposition (ALD). The film grown by ALD is self-limiting, and the thickness and chemical c om p osition of the film can be accurately controlled. The deposited film has good unifo rmi ity and confo rm al prop e rt ies. The co mp osite l amin ates, such as HiO 2/A₁ 2 O 3, etc, should be considered. (b) A variety of single-layer, multi-layer, and various laminated structures (such SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.9.1.908.198.919.221.svg 0.077 0.037 Chemistry Black and white SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.9.2.899.251.911.274.svg 0.077 0.04 Chemistry Black and white SVG 15695078.05-06-2019.JVFFX₃NCLXEAPX5.SPEC.9.3.887.305.922.382.svg 0.257 0.117 Chemistry Black and white as Ga 2 O 3, A 1 2 0 3, A 1GaO or A lGaO/A₁ 2 0 3) ar e pre pared though MOCVD equipment to prepare high p rforman ce insulating grid media. MOCVD method has the advant ag es of dense fi lm -fo rm ing state of diele c t ix c material, accurate thickness con tro l, easily fo rm ing hybrid fil m, and good repeatability of multilayer fi lm, especially the large controlled space in i n terface state controlling. The manufac tur ing pro cess of the invention is shown in fi gure 6- fi gure 11 and mainly co mpri ses the following steps. Figure 6 shows the preparation of het er ojunction with subs tr ate and barrier layer. Figure 7 shows etching barrier layer to G a N buffer la yer in sou rc e and dr ain contact. Figure 8 shows passivating opening and pro du cing source and drain Schott k y-con tact metal. Figures 9 a n d show providing openings in the first recessed t re nch gate and the second recessed trench gate and depositing insula ting dielec tr ic. Figure 11 shows deposition of gate metal. Device simulation so ftw are Senta uru s is used to primarily simulate and analyze the structure of the invention. In this simulation, gate length is 1 p n, the medium thickness between the gate and source is 10 nm, the distance between the two gates is 10 pm, the width of the gate is 10000 p m, the thickness of the GaN buf f er layer is 3 sm, the thickness of Al o. 26 Ga o. 7 a N barrier layer is 25 nm, and the gate metal working fun ction is 4.5 eV. The Schottky barrier of sou rc e and d ra in are 1.0 eV. It can be seen from the curve of the bidirection al conducting characteristics (FIG. 4), when the gate vol tag e is 1 0 V and the cu rre nt is 5 A, the on-state resistance of the device is 0.997 m a-cr
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based bidirectional switch
Materials described outside the worked examples.
AlGaN barrier layer
AlGaN
GaN buffer layer
GaN
passivation layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
on-state resistance at Vg=10V, I=5A | 0.997 mΩ·cm² | — |
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insulated gate dielectric
Al₂O₃
HfO₂
TiO₂
Ga₂O₃
SiO₂
SiN₄
AlN
MgO
Sc₂O₃
Al0.26Ga0.74N barrier layer
Al0.26Ga0.74N
insulated gate dielectric
Al₂O₃
HfO₂
TiO₂
Ga₂O₃
SiO₂
SiN₄
AlN
MgO
Sc₂O₃
Al0.26Ga0.74N barrier layer
Al0.26Ga0.74N
insulated gate dielectric
Al₂O₃
HfO₂
TiO₂
Ga₂O₃
SiO₂
SiN₄
AlN
MgO
Sc₂O₃
Al0.26Ga0.74N barrier layer
Al0.26Ga0.74N
insulated gate dielectric
Al₂O₃
HfO₂
TiO₂
Ga₂O₃
SiO₂
SiN₄
AlN
MgO
Sc₂O₃
Al0.26Ga0.74N barrier layer
Al0.26Ga0.74N