Patent
Atlas literature
Patent
US 12,396,190 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 to
FIG. 2. After the p-GaN gate 106 and TiN electrode 108 are formed, a conformal first dielectric layer 110 is formed on exposed surfaces of the AlGaN layer 102, …
FIG. 3. After the first dielectric layer 110 is formed, a photoresist 112 is then formed on the first dielectric layer 110, with an opening 114 formed therein 15 …
FIG. 4. After the photoresist 112 is formed, 25 an etching process is then performed using the photoresist 112 as an etch mask to remove exposed first …
FIG. 5. After the first dielectric layer 110 is patterned, using the remaining first dielectric layer 110 as 40 a mask to perform a N₂ pre-treatment to the …
FIG. 6 are schematic cross-sectional views illustrating a process flow of performing a N₂ pre-treatment to a GaN device in accordance with the preferred embodi- …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN device with N₂ pre-treatment, comprising: a GaN substrate; an AlGaN layer, covering said GaN substrate; a p-GaN gate on said AlGaN layer; a TiN electrode on said p-GaN gate; a first dielectric layer on said AlGaN layer around said p-GaN gate, wherein a horizontal spacing is between said first dielectric layer and said p-GaN gate, and an interface between said AlGaN layer and said GaN substrate not covered by said first dielectric layer is subject to N₂ pre-treatment; and a second dielectric layer, covering and directly contacting exposed said first dielectric layer, said AlGaN layer, said p-GaN gate and said TiN electrode.
The GaN device with N₂ pre-treatment of claim 1, wherein a material of said first dielectric layer is aluminum oxide, aluminum nitride or silicon oxide.
The GaN device with N₂ pre-treatment of claim 1, wherein a thickness of said first dielectric layer is between 15-200 Å.
The GaN device with N₂ pre-treatment of claim 1, wherein a material of said second dielectric layer is alumi-num oxide or aluminum nitride.
The GaN device with N₂ pre-treatment of claim 1, wherein a thickness of said second dielectric layer is between 15-200 Å.
The GaN device with N₂ pre-treatment of claim 1, wherein said horizontal spacing is between 0.05-0.25 µm.
A method of performing N₂ pre-treatment to GaN device, comprising: providing a GaN device, comprising a GaN substrate, an AlGaN layer covering said GaN substrate, a p-GaN gate on said AlGaN layer and a TiN electrode on said p-GaN gate; forming a conformal first dielectric layer on said AlGaN layer, said p-GaN gate and said TiN electrode; forming a photoresist on said first dielectric layer, and said photoresist is provided with an opening completely overlapping said p-GaN gate in a direction vertical to said GaN substrate, wherein a horizontal spacing is between a sidewall of said opening and said p-GaN gate; performing an etching process to remove said first dielec-tric layer exposed from said photoresist; removing said photoresist; and using remaining said first dielectric layer as a mask to perform a N₂ pre-treatment to an interface between said AlGaN layer and said GaN substrate not covered by said first dielectric layer.
The method of performing N₂ pre-treatment to GaN device of claim 7, wherein a material of said first dielectric B₂ layer is aluminum oxide or aluminum nitride formed through atomic layer deposition (ALD) or silicon oxide formed through chemical vapor deposition (CVD).
The method of performing N₂ pre-treatment to GaN device of claim 7, further comprising forming a second dielectric layer on said first dielectric layer, said AlGaN layer, said p-GaN gate and said TiN electrode after said N₂ pre-treatment.
The method of performing N₂ pre-treatment to GaN device of claim 7, wherein a plasma power applied in said N₂ pre-treatment is 10-50 W, a gas flow of nitrogen applied in said N₂ pre-treatment is 20-200 sccm, and a duration applied of said N₂ pre-treatment is 10-60 s.
The method of performing Ne pre-treatment to GaN device of claim 7, wherein said horizontal spacing is 0.05-0.25 µm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT with N₂ pre-treatment (E-mode)
Materials described outside the worked examples.
GaN substrate
GaN
AlGaN layer
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 15–200 Å | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,396,190 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 to
FIG. 2. After the p-GaN gate 106 and TiN electrode 108 are formed, a conformal first dielectric layer 110 is formed on exposed surfaces of the AlGaN layer 102, …
FIG. 3. After the first dielectric layer 110 is formed, a photoresist 112 is then formed on the first dielectric layer 110, with an opening 114 formed therein 15 …
FIG. 4. After the photoresist 112 is formed, 25 an etching process is then performed using the photoresist 112 as an etch mask to remove exposed first …
FIG. 5. After the first dielectric layer 110 is patterned, using the remaining first dielectric layer 110 as 40 a mask to perform a N₂ pre-treatment to the …
FIG. 6 are schematic cross-sectional views illustrating a process flow of performing a N₂ pre-treatment to a GaN device in accordance with the preferred embodi- …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN device with N₂ pre-treatment, comprising: a GaN substrate; an AlGaN layer, covering said GaN substrate; a p-GaN gate on said AlGaN layer; a TiN electrode on said p-GaN gate; a first dielectric layer on said AlGaN layer around said p-GaN gate, wherein a horizontal spacing is between said first dielectric layer and said p-GaN gate, and an interface between said AlGaN layer and said GaN substrate not covered by said first dielectric layer is subject to N₂ pre-treatment; and a second dielectric layer, covering and directly contacting exposed said first dielectric layer, said AlGaN layer, said p-GaN gate and said TiN electrode.
The GaN device with N₂ pre-treatment of claim 1, wherein a material of said first dielectric layer is aluminum oxide, aluminum nitride or silicon oxide.
The GaN device with N₂ pre-treatment of claim 1, wherein a thickness of said first dielectric layer is between 15-200 Å.
The GaN device with N₂ pre-treatment of claim 1, wherein a material of said second dielectric layer is alumi-num oxide or aluminum nitride.
The GaN device with N₂ pre-treatment of claim 1, wherein a thickness of said second dielectric layer is between 15-200 Å.
The GaN device with N₂ pre-treatment of claim 1, wherein said horizontal spacing is between 0.05-0.25 µm.
A method of performing N₂ pre-treatment to GaN device, comprising: providing a GaN device, comprising a GaN substrate, an AlGaN layer covering said GaN substrate, a p-GaN gate on said AlGaN layer and a TiN electrode on said p-GaN gate; forming a conformal first dielectric layer on said AlGaN layer, said p-GaN gate and said TiN electrode; forming a photoresist on said first dielectric layer, and said photoresist is provided with an opening completely overlapping said p-GaN gate in a direction vertical to said GaN substrate, wherein a horizontal spacing is between a sidewall of said opening and said p-GaN gate; performing an etching process to remove said first dielec-tric layer exposed from said photoresist; removing said photoresist; and using remaining said first dielectric layer as a mask to perform a N₂ pre-treatment to an interface between said AlGaN layer and said GaN substrate not covered by said first dielectric layer.
The method of performing N₂ pre-treatment to GaN device of claim 7, wherein a material of said first dielectric B₂ layer is aluminum oxide or aluminum nitride formed through atomic layer deposition (ALD) or silicon oxide formed through chemical vapor deposition (CVD).
The method of performing N₂ pre-treatment to GaN device of claim 7, further comprising forming a second dielectric layer on said first dielectric layer, said AlGaN layer, said p-GaN gate and said TiN electrode after said N₂ pre-treatment.
The method of performing N₂ pre-treatment to GaN device of claim 7, wherein a plasma power applied in said N₂ pre-treatment is 10-50 W, a gas flow of nitrogen applied in said N₂ pre-treatment is 20-200 sccm, and a duration applied of said N₂ pre-treatment is 10-60 s.
The method of performing Ne pre-treatment to GaN device of claim 7, wherein said horizontal spacing is 0.05-0.25 µm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT with N₂ pre-treatment (E-mode)
Materials described outside the worked examples.
GaN substrate
GaN
AlGaN layer
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 15–200 Å | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,396,190 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 to
FIG. 2. After the p-GaN gate 106 and TiN electrode 108 are formed, a conformal first dielectric layer 110 is formed on exposed surfaces of the AlGaN layer 102, …
FIG. 3. After the first dielectric layer 110 is formed, a photoresist 112 is then formed on the first dielectric layer 110, with an opening 114 formed therein 15 …
FIG. 4. After the photoresist 112 is formed, 25 an etching process is then performed using the photoresist 112 as an etch mask to remove exposed first …
FIG. 5. After the first dielectric layer 110 is patterned, using the remaining first dielectric layer 110 as 40 a mask to perform a N₂ pre-treatment to the …
FIG. 6 are schematic cross-sectional views illustrating a process flow of performing a N₂ pre-treatment to a GaN device in accordance with the preferred embodi- …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN device with N₂ pre-treatment, comprising: a GaN substrate; an AlGaN layer, covering said GaN substrate; a p-GaN gate on said AlGaN layer; a TiN electrode on said p-GaN gate; a first dielectric layer on said AlGaN layer around said p-GaN gate, wherein a horizontal spacing is between said first dielectric layer and said p-GaN gate, and an interface between said AlGaN layer and said GaN substrate not covered by said first dielectric layer is subject to N₂ pre-treatment; and a second dielectric layer, covering and directly contacting exposed said first dielectric layer, said AlGaN layer, said p-GaN gate and said TiN electrode.
The GaN device with N₂ pre-treatment of claim 1, wherein a material of said first dielectric layer is aluminum oxide, aluminum nitride or silicon oxide.
The GaN device with N₂ pre-treatment of claim 1, wherein a thickness of said first dielectric layer is between 15-200 Å.
The GaN device with N₂ pre-treatment of claim 1, wherein a material of said second dielectric layer is alumi-num oxide or aluminum nitride.
The GaN device with N₂ pre-treatment of claim 1, wherein a thickness of said second dielectric layer is between 15-200 Å.
The GaN device with N₂ pre-treatment of claim 1, wherein said horizontal spacing is between 0.05-0.25 µm.
A method of performing N₂ pre-treatment to GaN device, comprising: providing a GaN device, comprising a GaN substrate, an AlGaN layer covering said GaN substrate, a p-GaN gate on said AlGaN layer and a TiN electrode on said p-GaN gate; forming a conformal first dielectric layer on said AlGaN layer, said p-GaN gate and said TiN electrode; forming a photoresist on said first dielectric layer, and said photoresist is provided with an opening completely overlapping said p-GaN gate in a direction vertical to said GaN substrate, wherein a horizontal spacing is between a sidewall of said opening and said p-GaN gate; performing an etching process to remove said first dielec-tric layer exposed from said photoresist; removing said photoresist; and using remaining said first dielectric layer as a mask to perform a N₂ pre-treatment to an interface between said AlGaN layer and said GaN substrate not covered by said first dielectric layer.
The method of performing N₂ pre-treatment to GaN device of claim 7, wherein a material of said first dielectric B₂ layer is aluminum oxide or aluminum nitride formed through atomic layer deposition (ALD) or silicon oxide formed through chemical vapor deposition (CVD).
The method of performing N₂ pre-treatment to GaN device of claim 7, further comprising forming a second dielectric layer on said first dielectric layer, said AlGaN layer, said p-GaN gate and said TiN electrode after said N₂ pre-treatment.
The method of performing N₂ pre-treatment to GaN device of claim 7, wherein a plasma power applied in said N₂ pre-treatment is 10-50 W, a gas flow of nitrogen applied in said N₂ pre-treatment is 20-200 sccm, and a duration applied of said N₂ pre-treatment is 10-60 s.
The method of performing Ne pre-treatment to GaN device of claim 7, wherein said horizontal spacing is 0.05-0.25 µm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT with N₂ pre-treatment (E-mode)
Materials described outside the worked examples.
GaN substrate
GaN
AlGaN layer
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 15–200 Å | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,396,190 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 to
FIG. 2. After the p-GaN gate 106 and TiN electrode 108 are formed, a conformal first dielectric layer 110 is formed on exposed surfaces of the AlGaN layer 102, …
FIG. 3. After the first dielectric layer 110 is formed, a photoresist 112 is then formed on the first dielectric layer 110, with an opening 114 formed therein 15 …
FIG. 4. After the photoresist 112 is formed, 25 an etching process is then performed using the photoresist 112 as an etch mask to remove exposed first …
FIG. 5. After the first dielectric layer 110 is patterned, using the remaining first dielectric layer 110 as 40 a mask to perform a N₂ pre-treatment to the …
FIG. 6 are schematic cross-sectional views illustrating a process flow of performing a N₂ pre-treatment to a GaN device in accordance with the preferred embodi- …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN device with N₂ pre-treatment, comprising: a GaN substrate; an AlGaN layer, covering said GaN substrate; a p-GaN gate on said AlGaN layer; a TiN electrode on said p-GaN gate; a first dielectric layer on said AlGaN layer around said p-GaN gate, wherein a horizontal spacing is between said first dielectric layer and said p-GaN gate, and an interface between said AlGaN layer and said GaN substrate not covered by said first dielectric layer is subject to N₂ pre-treatment; and a second dielectric layer, covering and directly contacting exposed said first dielectric layer, said AlGaN layer, said p-GaN gate and said TiN electrode.
The GaN device with N₂ pre-treatment of claim 1, wherein a material of said first dielectric layer is aluminum oxide, aluminum nitride or silicon oxide.
The GaN device with N₂ pre-treatment of claim 1, wherein a thickness of said first dielectric layer is between 15-200 Å.
The GaN device with N₂ pre-treatment of claim 1, wherein a material of said second dielectric layer is alumi-num oxide or aluminum nitride.
The GaN device with N₂ pre-treatment of claim 1, wherein a thickness of said second dielectric layer is between 15-200 Å.
The GaN device with N₂ pre-treatment of claim 1, wherein said horizontal spacing is between 0.05-0.25 µm.
A method of performing N₂ pre-treatment to GaN device, comprising: providing a GaN device, comprising a GaN substrate, an AlGaN layer covering said GaN substrate, a p-GaN gate on said AlGaN layer and a TiN electrode on said p-GaN gate; forming a conformal first dielectric layer on said AlGaN layer, said p-GaN gate and said TiN electrode; forming a photoresist on said first dielectric layer, and said photoresist is provided with an opening completely overlapping said p-GaN gate in a direction vertical to said GaN substrate, wherein a horizontal spacing is between a sidewall of said opening and said p-GaN gate; performing an etching process to remove said first dielec-tric layer exposed from said photoresist; removing said photoresist; and using remaining said first dielectric layer as a mask to perform a N₂ pre-treatment to an interface between said AlGaN layer and said GaN substrate not covered by said first dielectric layer.
The method of performing N₂ pre-treatment to GaN device of claim 7, wherein a material of said first dielectric B₂ layer is aluminum oxide or aluminum nitride formed through atomic layer deposition (ALD) or silicon oxide formed through chemical vapor deposition (CVD).
The method of performing N₂ pre-treatment to GaN device of claim 7, further comprising forming a second dielectric layer on said first dielectric layer, said AlGaN layer, said p-GaN gate and said TiN electrode after said N₂ pre-treatment.
The method of performing N₂ pre-treatment to GaN device of claim 7, wherein a plasma power applied in said N₂ pre-treatment is 10-50 W, a gas flow of nitrogen applied in said N₂ pre-treatment is 20-200 sccm, and a duration applied of said N₂ pre-treatment is 10-60 s.
The method of performing Ne pre-treatment to GaN device of claim 7, wherein said horizontal spacing is 0.05-0.25 µm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT with N₂ pre-treatment (E-mode)
Materials described outside the worked examples.
GaN substrate
GaN
AlGaN layer
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 15–200 Å | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Related documents with shared materials, methods, properties, or citations.
TiN electrode
TiN
first dielectric layer
second dielectric layer
aluminum oxide
Al₂O₃
aluminum nitride
AlN
silicon oxide
SiO₂
| 0.05–0.25 µm |
| — |
— | 10–50 W | — |
Flow Rate | 20–200 sccm | — |
Duration | 10–60 sec | — |
TiN electrode
TiN
first dielectric layer
second dielectric layer
aluminum oxide
Al₂O₃
aluminum nitride
AlN
silicon oxide
SiO₂
| 0.05–0.25 µm |
| — |
— | 10–50 W | — |
Flow Rate | 20–200 sccm | — |
Duration | 10–60 sec | — |
TiN electrode
TiN
first dielectric layer
second dielectric layer
aluminum oxide
Al₂O₃
aluminum nitride
AlN
silicon oxide
SiO₂
| 0.05–0.25 µm |
| — |
— | 10–50 W | — |
Flow Rate | 20–200 sccm | — |
Duration | 10–60 sec | — |
TiN electrode
TiN
first dielectric layer
second dielectric layer
aluminum oxide
Al₂O₃
aluminum nitride
AlN
silicon oxide
SiO₂
| 0.05–0.25 µm |
| — |
— | 10–50 W | — |
Flow Rate | 20–200 sccm | — |
Duration | 10–60 sec | — |
