Patent
US 8,673,074Method of growing planar semi-polar Gallium-Nitride epitaxial film
Alexander Usikov
US
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Patent
Atlas literature
Patent
US 8,673,074Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(b) illustrates the semi-polar GaN (11-22) crystal plane of interest in the wurtzite crystal configuration. Please replace the paragraph that begins on …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A method of growing planar semi-polar Gallium-Nitride epitaxial film, comprising: pretreating an m -sapphire substrate in an atmosphere of ammonia and argon, annealing the pretreated m-sapphire substrate in an atmosphere of ammonia and hydrogen chloride, growing an intermediate layer of aluminum nitride (A l N) or aluminum-gallium nitride (Al GaN) of a thickness below 100 nm and grown at V/I II ratios of 6-15 or 15-25 and at a temperature in the range of 900 ° C to 1050 ° C on the annealed, pretreated m -sapphire substrate, and growing semi-polar { 11-22 } or { 10-13 } planar Gallium-Nitride on the intermediate layer, the intermediate layer and the semipolar { 11-22} or {10-13} plane Gallium-Nitride being grown using hydride vapor phase epitaxy (H V PE). Docket No: 7682P019 Page 3 of 6 RWB/jc
Layer stacks claimed or described, ordered top of device to substrate.
planar semi-polar GaN epitaxial film on m-sapphire
Materials described outside the worked examples.
m-sapphire substrate
Al₂O₃
aluminum nitride
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 900–1050 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,673,074Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(b) illustrates the semi-polar GaN (11-22) crystal plane of interest in the wurtzite crystal configuration. Please replace the paragraph that begins on …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
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A method of growing planar semi-polar Gallium-Nitride epitaxial film, comprising: pretreating an m -sapphire substrate in an atmosphere of ammonia and argon, annealing the pretreated m-sapphire substrate in an atmosphere of ammonia and hydrogen chloride, growing an intermediate layer of aluminum nitride (A l N) or aluminum-gallium nitride (Al GaN) of a thickness below 100 nm and grown at V/I II ratios of 6-15 or 15-25 and at a temperature in the range of 900 ° C to 1050 ° C on the annealed, pretreated m -sapphire substrate, and growing semi-polar { 11-22 } or { 10-13 } planar Gallium-Nitride on the intermediate layer, the intermediate layer and the semipolar { 11-22} or {10-13} plane Gallium-Nitride being grown using hydride vapor phase epitaxy (H V PE). Docket No: 7682P019 Page 3 of 6 RWB/jc
Layer stacks claimed or described, ordered top of device to substrate.
planar semi-polar GaN epitaxial film on m-sapphire
Materials described outside the worked examples.
m-sapphire substrate
Al₂O₃
aluminum nitride
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 900–1050 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,673,074Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(b) illustrates the semi-polar GaN (11-22) crystal plane of interest in the wurtzite crystal configuration. Please replace the paragraph that begins on …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method of growing planar semi-polar Gallium-Nitride epitaxial film, comprising: pretreating an m -sapphire substrate in an atmosphere of ammonia and argon, annealing the pretreated m-sapphire substrate in an atmosphere of ammonia and hydrogen chloride, growing an intermediate layer of aluminum nitride (A l N) or aluminum-gallium nitride (Al GaN) of a thickness below 100 nm and grown at V/I II ratios of 6-15 or 15-25 and at a temperature in the range of 900 ° C to 1050 ° C on the annealed, pretreated m -sapphire substrate, and growing semi-polar { 11-22 } or { 10-13 } planar Gallium-Nitride on the intermediate layer, the intermediate layer and the semipolar { 11-22} or {10-13} plane Gallium-Nitride being grown using hydride vapor phase epitaxy (H V PE). Docket No: 7682P019 Page 3 of 6 RWB/jc
Layer stacks claimed or described, ordered top of device to substrate.
planar semi-polar GaN epitaxial film on m-sapphire
Materials described outside the worked examples.
m-sapphire substrate
Al₂O₃
aluminum nitride
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 900–1050 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,673,074Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(b) illustrates the semi-polar GaN (11-22) crystal plane of interest in the wurtzite crystal configuration. Please replace the paragraph that begins on …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method of growing planar semi-polar Gallium-Nitride epitaxial film, comprising: pretreating an m -sapphire substrate in an atmosphere of ammonia and argon, annealing the pretreated m-sapphire substrate in an atmosphere of ammonia and hydrogen chloride, growing an intermediate layer of aluminum nitride (A l N) or aluminum-gallium nitride (Al GaN) of a thickness below 100 nm and grown at V/I II ratios of 6-15 or 15-25 and at a temperature in the range of 900 ° C to 1050 ° C on the annealed, pretreated m -sapphire substrate, and growing semi-polar { 11-22 } or { 10-13 } planar Gallium-Nitride on the intermediate layer, the intermediate layer and the semipolar { 11-22} or {10-13} plane Gallium-Nitride being grown using hydride vapor phase epitaxy (H V PE). Docket No: 7682P019 Page 3 of 6 RWB/jc
Layer stacks claimed or described, ordered top of device to substrate.
planar semi-polar GaN epitaxial film on m-sapphire
Materials described outside the worked examples.
m-sapphire substrate
Al₂O₃
aluminum nitride
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 900–1050 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
aluminum-gallium nitride
AlGaN
semi-polar Gallium Nitride
GaN
III-Nitride material
| ≤ 1 nm |
| — |
aluminum-gallium nitride
AlGaN
semi-polar Gallium Nitride
GaN
III-Nitride material
| ≤ 1 nm |
| — |
aluminum-gallium nitride
AlGaN
semi-polar Gallium Nitride
GaN
III-Nitride material
| ≤ 1 nm |
| — |
aluminum-gallium nitride
AlGaN
semi-polar Gallium Nitride
GaN
III-Nitride material
| ≤ 1 nm |
| — |