Patent
US 12,417,914 B2TECHNIQUE FOR GaN EPITAXY ON INSULATING SUBSTRATES
Nicholas S. Dellas, Scott Robert Summerfelt
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)·Sep. 16, 2025·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 12,417,914 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-E illustrate an example fabrication process for a seed wafer.
FIGS. 2A-E illustrate an example gallium nitride epitaxy process using the seed wafer shown in
FIGS. 3A-I illustrate a further example gallium nitride epitaxy process using the seed wafer shown in
FIG. 4 shows, in flowchart form, an example process for fabricating a seed wafer.
FIG. 5 shows, in flowchart form, an example process for fabricating a product wafer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: forming a first epitaxial layer of a gallium nitride (GaN) material onto a first substrate; bonding a surface of the first epitaxial layer to a second substrate, the second substrate including an insulating material; splitting the first epitaxial layer into a second epitaxial layer on the first substrate and a third epitaxial layer on the second substrate; forming a first wafer including the third epitaxial layer on the second substrate; and forming a second wafer having a third substrate using the first wafer.
The method of claim 1, wherein the gallium nitride material is an aluminum gallium nitride (AlGaN) material, and the first substrate reduces a dislocation density of the first epitaxial layer.
The method of claim 1, further comprising providing ions at a depth beneath a surface of the first epitaxial layer, wherein the depth beneath the surface of the first epitaxial layer is based on a thickness of the third epitaxial layer.
The method of claim 1, further comprising removing the second epitaxial layer from the first substrate.
The method of claim 1, wherein the first substrate includes sapphire.
The method of claim 1, wherein the surface of the first epitaxial layer is gallium facing and a surface of the third epitaxial layer is nitride facing.
The method of claim 1, wherein the second substrate includes aluminum nitride.
The method of claim 1, wherein the GaN material is a first GaN material, and forming a second wafer having a third substrate using the first wafer includes: forming a fourth epitaxial layer of a second GaN material onto a surface of the third epitaxial layer of the first wafer; providing ions at a depth beneath a surface of the fourth epitaxial layer; bonding the surface of the fourth epitaxial layer to the third substrate, the third substrate including the insu-lating material; splitting the fourth epitaxial layer into a fifth epitaxial layer on the second substrate and a sixth epitaxial layer on the third substrate; and forming a seventh epitaxial layer of a third GaN material onto a surface of the sixth epitaxial layer on the third substrate to form the second wafer.
The method of claim 1, wherein providing ions at a depth beneath a surface of the first epitaxial layer includes implanting the ions at the depth.
The method of claim 1, wherein splitting the first epitaxial layer into a second epitaxial layer on the first substrate and a third epitaxial layer on the second substrate includes annealing the first epitaxial layer.
The method of claim 1, further comprising polishing the surface of the first epitaxial layer and polishing a surface of the third epitaxial layer.
The method of claim 1, further comprising forming devices on the second wafer.
A method, comprising: forming a first epitaxial layer onto a base epitaxial layer of a first substrate; providing ions at a depth beneath a surface of the first epitaxial layer; bonding the surface of the first epitaxial layer to a second substrate, the second substrate including an insulating material; splitting the first epitaxial layer into a second epitaxial layer on the first substrate and a third epitaxial layer on the second substrate; forming a fourth epitaxial layer of a second material onto a surface of the third epitaxial layer on the second substrate to obtain a wafer; and forming devices in the fourth epitaxial layer of the wafer.
The method of claim 15, wherein the depth beneath the surface of the first epitaxial layer is based on a thickness of the third epitaxial layer.
The method of claim 15, wherein the first and second substrates include aluminum nitride.
The method of claim 15, further comprising forming a plurality of devices using the first epitaxial layer.
The method of claim 15, wherein the first epitaxial layer and the base epitaxial layer are of an AlGaN material.
The method of claim 15, wherein providing ions at a depth beneath a surface of the first epitaxial layer includes implanting the ions at the depth.
The method of claim 15, wherein splitting the first epitaxial layer into a second epitaxial layer on the first substrate and a third epitaxial layer on the second substrate includes annealing the first epitaxial layer.
The method of claim 15, further comprising forming devices on the wafer.
A method, comprising: forming a first substrate and a base epitaxial layer on the first substrate; forming a first epitaxial layer over the base epitaxial layer; and providing ions at a depth beneath a surface of the first epitaxial layer; bonding the surface of the first epitaxial layer to a second substrate, the second substrate including an insulating material; splitting the first epitaxial layer at the depth beneath the surface of the first epitaxial layer to form a second epitaxial layer bonded to the second substrate; and forming a third epitaxial layer on a surface of the second epitaxial layer to form a wafer including the second substrate.
The method of claim 20, wherein forming a first substrate and a base epitaxial layer on the first substrate includes: forming a third epitaxial layer on a third substrate; providing ions at a depth beneath a surface of the third epitaxial layer; bonding the surface of the third epitaxial layer to the first substrate; and splitting the third epitaxial layer to form the base epitaxial layer bonded to the first substrate.
The method of claim 20, wherein the base epitaxial layer, the first epitaxial layer, and the second epitaxial layer each includes a respective GaN material.
The method of claim 20, wherein the first substrate includes the insulating material.
The method of claim 20, further comprising forming devices on the wafer. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
gallium nitride
GaN
insulating material (second substrate)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–12 µm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,417,914 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-E illustrate an example fabrication process for a seed wafer.
FIGS. 2A-E illustrate an example gallium nitride epitaxy process using the seed wafer shown in
FIGS. 3A-I illustrate a further example gallium nitride epitaxy process using the seed wafer shown in
FIG. 4 shows, in flowchart form, an example process for fabricating a seed wafer.
FIG. 5 shows, in flowchart form, an example process for fabricating a product wafer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: forming a first epitaxial layer of a gallium nitride (GaN) material onto a first substrate; bonding a surface of the first epitaxial layer to a second substrate, the second substrate including an insulating material; splitting the first epitaxial layer into a second epitaxial layer on the first substrate and a third epitaxial layer on the second substrate; forming a first wafer including the third epitaxial layer on the second substrate; and forming a second wafer having a third substrate using the first wafer.
The method of claim 1, wherein the gallium nitride material is an aluminum gallium nitride (AlGaN) material, and the first substrate reduces a dislocation density of the first epitaxial layer.
The method of claim 1, further comprising providing ions at a depth beneath a surface of the first epitaxial layer, wherein the depth beneath the surface of the first epitaxial layer is based on a thickness of the third epitaxial layer.
The method of claim 1, further comprising removing the second epitaxial layer from the first substrate.
The method of claim 1, wherein the first substrate includes sapphire.
The method of claim 1, wherein the surface of the first epitaxial layer is gallium facing and a surface of the third epitaxial layer is nitride facing.
The method of claim 1, wherein the second substrate includes aluminum nitride.
The method of claim 1, wherein the GaN material is a first GaN material, and forming a second wafer having a third substrate using the first wafer includes: forming a fourth epitaxial layer of a second GaN material onto a surface of the third epitaxial layer of the first wafer; providing ions at a depth beneath a surface of the fourth epitaxial layer; bonding the surface of the fourth epitaxial layer to the third substrate, the third substrate including the insu-lating material; splitting the fourth epitaxial layer into a fifth epitaxial layer on the second substrate and a sixth epitaxial layer on the third substrate; and forming a seventh epitaxial layer of a third GaN material onto a surface of the sixth epitaxial layer on the third substrate to form the second wafer.
The method of claim 1, wherein providing ions at a depth beneath a surface of the first epitaxial layer includes implanting the ions at the depth.
The method of claim 1, wherein splitting the first epitaxial layer into a second epitaxial layer on the first substrate and a third epitaxial layer on the second substrate includes annealing the first epitaxial layer.
The method of claim 1, further comprising polishing the surface of the first epitaxial layer and polishing a surface of the third epitaxial layer.
The method of claim 1, further comprising forming devices on the second wafer.
A method, comprising: forming a first epitaxial layer onto a base epitaxial layer of a first substrate; providing ions at a depth beneath a surface of the first epitaxial layer; bonding the surface of the first epitaxial layer to a second substrate, the second substrate including an insulating material; splitting the first epitaxial layer into a second epitaxial layer on the first substrate and a third epitaxial layer on the second substrate; forming a fourth epitaxial layer of a second material onto a surface of the third epitaxial layer on the second substrate to obtain a wafer; and forming devices in the fourth epitaxial layer of the wafer.
The method of claim 15, wherein the depth beneath the surface of the first epitaxial layer is based on a thickness of the third epitaxial layer.
The method of claim 15, wherein the first and second substrates include aluminum nitride.
The method of claim 15, further comprising forming a plurality of devices using the first epitaxial layer.
The method of claim 15, wherein the first epitaxial layer and the base epitaxial layer are of an AlGaN material.
The method of claim 15, wherein providing ions at a depth beneath a surface of the first epitaxial layer includes implanting the ions at the depth.
The method of claim 15, wherein splitting the first epitaxial layer into a second epitaxial layer on the first substrate and a third epitaxial layer on the second substrate includes annealing the first epitaxial layer.
The method of claim 15, further comprising forming devices on the wafer.
A method, comprising: forming a first substrate and a base epitaxial layer on the first substrate; forming a first epitaxial layer over the base epitaxial layer; and providing ions at a depth beneath a surface of the first epitaxial layer; bonding the surface of the first epitaxial layer to a second substrate, the second substrate including an insulating material; splitting the first epitaxial layer at the depth beneath the surface of the first epitaxial layer to form a second epitaxial layer bonded to the second substrate; and forming a third epitaxial layer on a surface of the second epitaxial layer to form a wafer including the second substrate.
The method of claim 20, wherein forming a first substrate and a base epitaxial layer on the first substrate includes: forming a third epitaxial layer on a third substrate; providing ions at a depth beneath a surface of the third epitaxial layer; bonding the surface of the third epitaxial layer to the first substrate; and splitting the third epitaxial layer to form the base epitaxial layer bonded to the first substrate.
The method of claim 20, wherein the base epitaxial layer, the first epitaxial layer, and the second epitaxial layer each includes a respective GaN material.
The method of claim 20, wherein the first substrate includes the insulating material.
The method of claim 20, further comprising forming devices on the wafer. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
gallium nitride
GaN
insulating material (second substrate)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–12 µm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,417,914 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-E illustrate an example fabrication process for a seed wafer.
FIGS. 2A-E illustrate an example gallium nitride epitaxy process using the seed wafer shown in
FIGS. 3A-I illustrate a further example gallium nitride epitaxy process using the seed wafer shown in
FIG. 4 shows, in flowchart form, an example process for fabricating a seed wafer.
FIG. 5 shows, in flowchart form, an example process for fabricating a product wafer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: forming a first epitaxial layer of a gallium nitride (GaN) material onto a first substrate; bonding a surface of the first epitaxial layer to a second substrate, the second substrate including an insulating material; splitting the first epitaxial layer into a second epitaxial layer on the first substrate and a third epitaxial layer on the second substrate; forming a first wafer including the third epitaxial layer on the second substrate; and forming a second wafer having a third substrate using the first wafer.
The method of claim 1, wherein the gallium nitride material is an aluminum gallium nitride (AlGaN) material, and the first substrate reduces a dislocation density of the first epitaxial layer.
The method of claim 1, further comprising providing ions at a depth beneath a surface of the first epitaxial layer, wherein the depth beneath the surface of the first epitaxial layer is based on a thickness of the third epitaxial layer.
The method of claim 1, further comprising removing the second epitaxial layer from the first substrate.
The method of claim 1, wherein the first substrate includes sapphire.
The method of claim 1, wherein the surface of the first epitaxial layer is gallium facing and a surface of the third epitaxial layer is nitride facing.
The method of claim 1, wherein the second substrate includes aluminum nitride.
The method of claim 1, wherein the GaN material is a first GaN material, and forming a second wafer having a third substrate using the first wafer includes: forming a fourth epitaxial layer of a second GaN material onto a surface of the third epitaxial layer of the first wafer; providing ions at a depth beneath a surface of the fourth epitaxial layer; bonding the surface of the fourth epitaxial layer to the third substrate, the third substrate including the insu-lating material; splitting the fourth epitaxial layer into a fifth epitaxial layer on the second substrate and a sixth epitaxial layer on the third substrate; and forming a seventh epitaxial layer of a third GaN material onto a surface of the sixth epitaxial layer on the third substrate to form the second wafer.
The method of claim 1, wherein providing ions at a depth beneath a surface of the first epitaxial layer includes implanting the ions at the depth.
The method of claim 1, wherein splitting the first epitaxial layer into a second epitaxial layer on the first substrate and a third epitaxial layer on the second substrate includes annealing the first epitaxial layer.
The method of claim 1, further comprising polishing the surface of the first epitaxial layer and polishing a surface of the third epitaxial layer.
The method of claim 1, further comprising forming devices on the second wafer.
A method, comprising: forming a first epitaxial layer onto a base epitaxial layer of a first substrate; providing ions at a depth beneath a surface of the first epitaxial layer; bonding the surface of the first epitaxial layer to a second substrate, the second substrate including an insulating material; splitting the first epitaxial layer into a second epitaxial layer on the first substrate and a third epitaxial layer on the second substrate; forming a fourth epitaxial layer of a second material onto a surface of the third epitaxial layer on the second substrate to obtain a wafer; and forming devices in the fourth epitaxial layer of the wafer.
The method of claim 15, wherein the depth beneath the surface of the first epitaxial layer is based on a thickness of the third epitaxial layer.
The method of claim 15, wherein the first and second substrates include aluminum nitride.
The method of claim 15, further comprising forming a plurality of devices using the first epitaxial layer.
The method of claim 15, wherein the first epitaxial layer and the base epitaxial layer are of an AlGaN material.
The method of claim 15, wherein providing ions at a depth beneath a surface of the first epitaxial layer includes implanting the ions at the depth.
The method of claim 15, wherein splitting the first epitaxial layer into a second epitaxial layer on the first substrate and a third epitaxial layer on the second substrate includes annealing the first epitaxial layer.
The method of claim 15, further comprising forming devices on the wafer.
A method, comprising: forming a first substrate and a base epitaxial layer on the first substrate; forming a first epitaxial layer over the base epitaxial layer; and providing ions at a depth beneath a surface of the first epitaxial layer; bonding the surface of the first epitaxial layer to a second substrate, the second substrate including an insulating material; splitting the first epitaxial layer at the depth beneath the surface of the first epitaxial layer to form a second epitaxial layer bonded to the second substrate; and forming a third epitaxial layer on a surface of the second epitaxial layer to form a wafer including the second substrate.
The method of claim 20, wherein forming a first substrate and a base epitaxial layer on the first substrate includes: forming a third epitaxial layer on a third substrate; providing ions at a depth beneath a surface of the third epitaxial layer; bonding the surface of the third epitaxial layer to the first substrate; and splitting the third epitaxial layer to form the base epitaxial layer bonded to the first substrate.
The method of claim 20, wherein the base epitaxial layer, the first epitaxial layer, and the second epitaxial layer each includes a respective GaN material.
The method of claim 20, wherein the first substrate includes the insulating material.
The method of claim 20, further comprising forming devices on the wafer. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
gallium nitride
GaN
insulating material (second substrate)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–12 µm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,417,914 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-E illustrate an example fabrication process for a seed wafer.
FIGS. 2A-E illustrate an example gallium nitride epitaxy process using the seed wafer shown in
FIGS. 3A-I illustrate a further example gallium nitride epitaxy process using the seed wafer shown in
FIG. 4 shows, in flowchart form, an example process for fabricating a seed wafer.
FIG. 5 shows, in flowchart form, an example process for fabricating a product wafer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: forming a first epitaxial layer of a gallium nitride (GaN) material onto a first substrate; bonding a surface of the first epitaxial layer to a second substrate, the second substrate including an insulating material; splitting the first epitaxial layer into a second epitaxial layer on the first substrate and a third epitaxial layer on the second substrate; forming a first wafer including the third epitaxial layer on the second substrate; and forming a second wafer having a third substrate using the first wafer.
The method of claim 1, wherein the gallium nitride material is an aluminum gallium nitride (AlGaN) material, and the first substrate reduces a dislocation density of the first epitaxial layer.
The method of claim 1, further comprising providing ions at a depth beneath a surface of the first epitaxial layer, wherein the depth beneath the surface of the first epitaxial layer is based on a thickness of the third epitaxial layer.
The method of claim 1, further comprising removing the second epitaxial layer from the first substrate.
The method of claim 1, wherein the first substrate includes sapphire.
The method of claim 1, wherein the surface of the first epitaxial layer is gallium facing and a surface of the third epitaxial layer is nitride facing.
The method of claim 1, wherein the second substrate includes aluminum nitride.
The method of claim 1, wherein the GaN material is a first GaN material, and forming a second wafer having a third substrate using the first wafer includes: forming a fourth epitaxial layer of a second GaN material onto a surface of the third epitaxial layer of the first wafer; providing ions at a depth beneath a surface of the fourth epitaxial layer; bonding the surface of the fourth epitaxial layer to the third substrate, the third substrate including the insu-lating material; splitting the fourth epitaxial layer into a fifth epitaxial layer on the second substrate and a sixth epitaxial layer on the third substrate; and forming a seventh epitaxial layer of a third GaN material onto a surface of the sixth epitaxial layer on the third substrate to form the second wafer.
The method of claim 1, wherein providing ions at a depth beneath a surface of the first epitaxial layer includes implanting the ions at the depth.
The method of claim 1, wherein splitting the first epitaxial layer into a second epitaxial layer on the first substrate and a third epitaxial layer on the second substrate includes annealing the first epitaxial layer.
The method of claim 1, further comprising polishing the surface of the first epitaxial layer and polishing a surface of the third epitaxial layer.
The method of claim 1, further comprising forming devices on the second wafer.
A method, comprising: forming a first epitaxial layer onto a base epitaxial layer of a first substrate; providing ions at a depth beneath a surface of the first epitaxial layer; bonding the surface of the first epitaxial layer to a second substrate, the second substrate including an insulating material; splitting the first epitaxial layer into a second epitaxial layer on the first substrate and a third epitaxial layer on the second substrate; forming a fourth epitaxial layer of a second material onto a surface of the third epitaxial layer on the second substrate to obtain a wafer; and forming devices in the fourth epitaxial layer of the wafer.
The method of claim 15, wherein the depth beneath the surface of the first epitaxial layer is based on a thickness of the third epitaxial layer.
The method of claim 15, wherein the first and second substrates include aluminum nitride.
The method of claim 15, further comprising forming a plurality of devices using the first epitaxial layer.
The method of claim 15, wherein the first epitaxial layer and the base epitaxial layer are of an AlGaN material.
The method of claim 15, wherein providing ions at a depth beneath a surface of the first epitaxial layer includes implanting the ions at the depth.
The method of claim 15, wherein splitting the first epitaxial layer into a second epitaxial layer on the first substrate and a third epitaxial layer on the second substrate includes annealing the first epitaxial layer.
The method of claim 15, further comprising forming devices on the wafer.
A method, comprising: forming a first substrate and a base epitaxial layer on the first substrate; forming a first epitaxial layer over the base epitaxial layer; and providing ions at a depth beneath a surface of the first epitaxial layer; bonding the surface of the first epitaxial layer to a second substrate, the second substrate including an insulating material; splitting the first epitaxial layer at the depth beneath the surface of the first epitaxial layer to form a second epitaxial layer bonded to the second substrate; and forming a third epitaxial layer on a surface of the second epitaxial layer to form a wafer including the second substrate.
The method of claim 20, wherein forming a first substrate and a base epitaxial layer on the first substrate includes: forming a third epitaxial layer on a third substrate; providing ions at a depth beneath a surface of the third epitaxial layer; bonding the surface of the third epitaxial layer to the first substrate; and splitting the third epitaxial layer to form the base epitaxial layer bonded to the first substrate.
The method of claim 20, wherein the base epitaxial layer, the first epitaxial layer, and the second epitaxial layer each includes a respective GaN material.
The method of claim 20, wherein the first substrate includes the insulating material.
The method of claim 20, further comprising forming devices on the wafer. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
gallium nitride
GaN
insulating material (second substrate)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–12 µm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Related documents with shared materials, methods, properties, or citations.
second material (fourth epitaxial layer)
aluminum gallium nitride
AlGaN
sapphire
Al₂O₃
aluminum nitride
AlN
polycrystalline aluminum nitride
p-AlN
silicon dioxide
SiO₂
hydrogen ions
H+
| — |
Thickness | 1–20 µm | — |
second material (fourth epitaxial layer)
aluminum gallium nitride
AlGaN
sapphire
Al₂O₃
aluminum nitride
AlN
polycrystalline aluminum nitride
p-AlN
silicon dioxide
SiO₂
hydrogen ions
H+
| — |
Thickness | 1–20 µm | — |
second material (fourth epitaxial layer)
aluminum gallium nitride
AlGaN
sapphire
Al₂O₃
aluminum nitride
AlN
polycrystalline aluminum nitride
p-AlN
silicon dioxide
SiO₂
hydrogen ions
H+
| — |
Thickness | 1–20 µm | — |
second material (fourth epitaxial layer)
aluminum gallium nitride
AlGaN
sapphire
Al₂O₃
aluminum nitride
AlN
polycrystalline aluminum nitride
p-AlN
silicon dioxide
SiO₂
hydrogen ions
H+
| — |
Thickness | 1–20 µm | — |