Patent
US 8,330,167GaN-BASED FIELD EFFECT TRANSISTOR AND METHOD OF
Nomura Takehiko
US
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US 8,330,167Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based field effect transistor, comprising: a substrate; a channel layer comprised of p-type or undoped GaN-based semiconductor material formed on the substrate; an electron supplying layer formed on said channel layer and comprised of GaN-based semiconductor material which has a band gap energy greater than that of said channel layer; a first insulating film formed on a surface of said channel layer which was exposed after a part of said electron supplying layer was removed; a gate electrode formed on said first insulating film; a source electrode and a drain electrode formed so that said gate electrode positions in between them; and a second insulating film formed on said electron supplying layer, which is a different insulating film from said first insulating film and has an electron collapse decreasing effect, wherein a side surface of the second insulatin g film between the g ate electrode and the drain electrode, which has a contact with the first insulating film, is formed in a different plane from a side surface of the electron supplying layer.
The GaN-based field effect transistor according to claim 1, wherein said electron supplying layer includes a first electron supplying layer and a second electron supplying layer that are separated from each other so that a gate consisted of said channel layer directly underneath said first insulating film, said first insulating film, and said gate electrode positions between the first and second electron supplying layers, and a drift layer comprising p-type or undoped GaN-based semiconductor material are formed between said channel layer and said first electron supplying layer, and said channel layer and said second electron supplying layer, respectively.
The GaN-based field effect transistor according to claim 1, wherein said second insulating film is comprised of either SiN, A l2 3, Sc₂ O 3, or MgO.
The GaN-based field effect transistor according to claim 1, wherein said first insulating film is comprised of SiO₂ or A 1203.
The GaN-based field effect transistor according to claim 1, wherein end of said gate electrode at drain side is formed to superpose with said first insulating film and said second insulating film.
The GaN-based field effect transistor according to claim 1, wherein the second insulating film is comprised of a material different from the first insulating film.
A process for manufacturing a GaN-based field effect transistor, comprising: forming on a substrate, in sequence, a channel layer comprised of p-type or undoped GaN-based semiconductor material, and an electron supplying layer comprised of GaN-based semiconductor material having band gap energy greater than that of said channel layer; forming a first insulating film on a surface of said channel layer which was exposed after a part of said electron supplying layer was removed; forming a gate electrode on said first insulating film; forming a source electrode and a drain electrode so that said gate electrode positions in between them; and forming on said electron supplying layer a second insulating film, which is a different insulating film from said first insulating film and has electron collapse decreasing effect; and wherein said second film is made with either of p-CVD, Cat-CVD, or ECR sputtering. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based MOSFET (normally-off HFET)
Materials described outside the worked examples.
p-type or undoped GaN-based semiconductor
GaN-based semiconductor with greater band gap (electron supplying layer)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,330,167Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based field effect transistor, comprising: a substrate; a channel layer comprised of p-type or undoped GaN-based semiconductor material formed on the substrate; an electron supplying layer formed on said channel layer and comprised of GaN-based semiconductor material which has a band gap energy greater than that of said channel layer; a first insulating film formed on a surface of said channel layer which was exposed after a part of said electron supplying layer was removed; a gate electrode formed on said first insulating film; a source electrode and a drain electrode formed so that said gate electrode positions in between them; and a second insulating film formed on said electron supplying layer, which is a different insulating film from said first insulating film and has an electron collapse decreasing effect, wherein a side surface of the second insulatin g film between the g ate electrode and the drain electrode, which has a contact with the first insulating film, is formed in a different plane from a side surface of the electron supplying layer.
The GaN-based field effect transistor according to claim 1, wherein said electron supplying layer includes a first electron supplying layer and a second electron supplying layer that are separated from each other so that a gate consisted of said channel layer directly underneath said first insulating film, said first insulating film, and said gate electrode positions between the first and second electron supplying layers, and a drift layer comprising p-type or undoped GaN-based semiconductor material are formed between said channel layer and said first electron supplying layer, and said channel layer and said second electron supplying layer, respectively.
The GaN-based field effect transistor according to claim 1, wherein said second insulating film is comprised of either SiN, A l2 3, Sc₂ O 3, or MgO.
The GaN-based field effect transistor according to claim 1, wherein said first insulating film is comprised of SiO₂ or A 1203.
The GaN-based field effect transistor according to claim 1, wherein end of said gate electrode at drain side is formed to superpose with said first insulating film and said second insulating film.
The GaN-based field effect transistor according to claim 1, wherein the second insulating film is comprised of a material different from the first insulating film.
A process for manufacturing a GaN-based field effect transistor, comprising: forming on a substrate, in sequence, a channel layer comprised of p-type or undoped GaN-based semiconductor material, and an electron supplying layer comprised of GaN-based semiconductor material having band gap energy greater than that of said channel layer; forming a first insulating film on a surface of said channel layer which was exposed after a part of said electron supplying layer was removed; forming a gate electrode on said first insulating film; forming a source electrode and a drain electrode so that said gate electrode positions in between them; and forming on said electron supplying layer a second insulating film, which is a different insulating film from said first insulating film and has electron collapse decreasing effect; and wherein said second film is made with either of p-CVD, Cat-CVD, or ECR sputtering. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based MOSFET (normally-off HFET)
Materials described outside the worked examples.
p-type or undoped GaN-based semiconductor
GaN-based semiconductor with greater band gap (electron supplying layer)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,330,167Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based field effect transistor, comprising: a substrate; a channel layer comprised of p-type or undoped GaN-based semiconductor material formed on the substrate; an electron supplying layer formed on said channel layer and comprised of GaN-based semiconductor material which has a band gap energy greater than that of said channel layer; a first insulating film formed on a surface of said channel layer which was exposed after a part of said electron supplying layer was removed; a gate electrode formed on said first insulating film; a source electrode and a drain electrode formed so that said gate electrode positions in between them; and a second insulating film formed on said electron supplying layer, which is a different insulating film from said first insulating film and has an electron collapse decreasing effect, wherein a side surface of the second insulatin g film between the g ate electrode and the drain electrode, which has a contact with the first insulating film, is formed in a different plane from a side surface of the electron supplying layer.
The GaN-based field effect transistor according to claim 1, wherein said electron supplying layer includes a first electron supplying layer and a second electron supplying layer that are separated from each other so that a gate consisted of said channel layer directly underneath said first insulating film, said first insulating film, and said gate electrode positions between the first and second electron supplying layers, and a drift layer comprising p-type or undoped GaN-based semiconductor material are formed between said channel layer and said first electron supplying layer, and said channel layer and said second electron supplying layer, respectively.
The GaN-based field effect transistor according to claim 1, wherein said second insulating film is comprised of either SiN, A l2 3, Sc₂ O 3, or MgO.
The GaN-based field effect transistor according to claim 1, wherein said first insulating film is comprised of SiO₂ or A 1203.
The GaN-based field effect transistor according to claim 1, wherein end of said gate electrode at drain side is formed to superpose with said first insulating film and said second insulating film.
The GaN-based field effect transistor according to claim 1, wherein the second insulating film is comprised of a material different from the first insulating film.
A process for manufacturing a GaN-based field effect transistor, comprising: forming on a substrate, in sequence, a channel layer comprised of p-type or undoped GaN-based semiconductor material, and an electron supplying layer comprised of GaN-based semiconductor material having band gap energy greater than that of said channel layer; forming a first insulating film on a surface of said channel layer which was exposed after a part of said electron supplying layer was removed; forming a gate electrode on said first insulating film; forming a source electrode and a drain electrode so that said gate electrode positions in between them; and forming on said electron supplying layer a second insulating film, which is a different insulating film from said first insulating film and has electron collapse decreasing effect; and wherein said second film is made with either of p-CVD, Cat-CVD, or ECR sputtering. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based MOSFET (normally-off HFET)
Materials described outside the worked examples.
p-type or undoped GaN-based semiconductor
GaN-based semiconductor with greater band gap (electron supplying layer)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,330,167Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based field effect transistor, comprising: a substrate; a channel layer comprised of p-type or undoped GaN-based semiconductor material formed on the substrate; an electron supplying layer formed on said channel layer and comprised of GaN-based semiconductor material which has a band gap energy greater than that of said channel layer; a first insulating film formed on a surface of said channel layer which was exposed after a part of said electron supplying layer was removed; a gate electrode formed on said first insulating film; a source electrode and a drain electrode formed so that said gate electrode positions in between them; and a second insulating film formed on said electron supplying layer, which is a different insulating film from said first insulating film and has an electron collapse decreasing effect, wherein a side surface of the second insulatin g film between the g ate electrode and the drain electrode, which has a contact with the first insulating film, is formed in a different plane from a side surface of the electron supplying layer.
The GaN-based field effect transistor according to claim 1, wherein said electron supplying layer includes a first electron supplying layer and a second electron supplying layer that are separated from each other so that a gate consisted of said channel layer directly underneath said first insulating film, said first insulating film, and said gate electrode positions between the first and second electron supplying layers, and a drift layer comprising p-type or undoped GaN-based semiconductor material are formed between said channel layer and said first electron supplying layer, and said channel layer and said second electron supplying layer, respectively.
The GaN-based field effect transistor according to claim 1, wherein said second insulating film is comprised of either SiN, A l2 3, Sc₂ O 3, or MgO.
The GaN-based field effect transistor according to claim 1, wherein said first insulating film is comprised of SiO₂ or A 1203.
The GaN-based field effect transistor according to claim 1, wherein end of said gate electrode at drain side is formed to superpose with said first insulating film and said second insulating film.
The GaN-based field effect transistor according to claim 1, wherein the second insulating film is comprised of a material different from the first insulating film.
A process for manufacturing a GaN-based field effect transistor, comprising: forming on a substrate, in sequence, a channel layer comprised of p-type or undoped GaN-based semiconductor material, and an electron supplying layer comprised of GaN-based semiconductor material having band gap energy greater than that of said channel layer; forming a first insulating film on a surface of said channel layer which was exposed after a part of said electron supplying layer was removed; forming a gate electrode on said first insulating film; forming a source electrode and a drain electrode so that said gate electrode positions in between them; and forming on said electron supplying layer a second insulating film, which is a different insulating film from said first insulating film and has electron collapse decreasing effect; and wherein said second film is made with either of p-CVD, Cat-CVD, or ECR sputtering. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based MOSFET (normally-off HFET)
Materials described outside the worked examples.
p-type or undoped GaN-based semiconductor
GaN-based semiconductor with greater band gap (electron supplying layer)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
first insulating film material
second insulating film material (electron collapse decreasing effect)
p-type or undoped GaN-based semiconductor (drift layer)
SiN
Al₂O₃
Sc₂O₃
MgO
SiO₂
p-GaN or undoped GaN (channel layer)
GaN
AlGaN (electron supply layer)
AlGaN
AlN (buffer/nucleation layer)
AlN
sapphire, SiC, or Si (substrate)
first insulating film material
second insulating film material (electron collapse decreasing effect)
p-type or undoped GaN-based semiconductor (drift layer)
SiN
Al₂O₃
Sc₂O₃
MgO
SiO₂
p-GaN or undoped GaN (channel layer)
GaN
AlGaN (electron supply layer)
AlGaN
AlN (buffer/nucleation layer)
AlN
sapphire, SiC, or Si (substrate)
first insulating film material
second insulating film material (electron collapse decreasing effect)
p-type or undoped GaN-based semiconductor (drift layer)
SiN
Al₂O₃
Sc₂O₃
MgO
SiO₂
p-GaN or undoped GaN (channel layer)
GaN
AlGaN (electron supply layer)
AlGaN
AlN (buffer/nucleation layer)
AlN
sapphire, SiC, or Si (substrate)
first insulating film material
second insulating film material (electron collapse decreasing effect)
p-type or undoped GaN-based semiconductor (drift layer)
SiN
Al₂O₃
Sc₂O₃
MgO
SiO₂
p-GaN or undoped GaN (channel layer)
GaN
AlGaN (electron supply layer)
AlGaN
AlN (buffer/nucleation layer)
AlN
sapphire, SiC, or Si (substrate)