Gallium Nitride-Based Compound Semiconductor Light-Emitting Device

Koji Kamei

Patent

Atlas literature

Patent

US 7,952,116

Gallium Nitride-Based Compound Semiconductor Light-Emitting Device

Koji Kamei

2011-05-31·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

6 independent · 13 dependent

1
Independentgallium nitride-based compound semiconductortransparent electrically conducting filmpositive electrode metal mixed layergallium nitride-based compound semiconductor light-emitting device
A gallium nitride-based compound semiconductor light- emitting device comprising an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer which are formed in this order on a substrate, wherein each layer comprises a gallium nitride- based compound semiconductor, the light-emitting device has a negative electrode and a positive electrode provided on the n-type semiconductor layer and on the p-type semiconductor layer, respectively, the positive electrode is at least partially formed of a transparent electrically conducting ﬁlm comprising a transparent electrically conducting material, the transparent electrically conducting ﬁlm is at least partially in contact with the p-type semiconductor layer, and a region having a semiconductor metal concentration of 20 at.% or more based on all metals in the transparent electrically conducting ﬁlm is present in the transparent electrically conducting ﬁlm on the semiconductor side surface of the transparent electrically conducting ﬁlm, and wherein a positive electrode metal mixed la y er containing a metal component of the transparent electrically conducting ﬁlm is present in the p-type semiconductor la y er, wherein the concentration of the trans p arent electrically conducting ﬁlm metal component in the positive 2 AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₁₁₈₆₁₂ Appln. No.: 12/776,502 electrode metal mixed la y er is from 0.1 to 20 at.% based on all metals in the positive electrode metal mixed la v er.
1. 2
  Dependent← claim 1gallium nitride-based compound semiconductortransparent electrically conducting filmpositive electrode metal mixed layergallium nitride-based compound semiconductor light-emitting device
  The gallium nitride-based compound semiconductor light- emitting device according to claim 1, wherein a region having a semiconductor metal concentration of 40 at.% or more based on all metals in the transparent electrically conducting ﬁlm is present in the transparent electrically conducting ﬁlm in the range of less than 3 nm from the semiconductor/transparent electrically conducting ﬁlm interface.
2. 3
  Dependent← claim 1gallium nitride-based compound semiconductortransparent electrically conducting filmpositive electrode metal mixed layergallium nitride-based compound semiconductor light-emitting device
  The gallium nitride-based compound semiconductor light- emitting device according to claim 1, wherein the semiconductor metal concentration of the transparent electrically conducting ﬁlm in the range of less than 3 nm or more from the semiconductor/transparent electrically conducting ﬁlm interface is 15 at.% or less based on all metals in the transparent electrically conducting ﬁlm.
3. 4
  Dependent← claim 1transparent electrically conducting filmgallium nitride-based compound semiconductor light-emitting device
  The gallium nitride-based compound semiconductor light-emitting device according to claim 1, wherein the transparent electrically conducting ﬁlm is formed at room temperature and, after the ﬁlm formation, is heat-treated at 300 to 700 °C.
4. 5
  Dependent← claim 1transparent electrically conducting filmgallium nitride-based compound semiconductor light-emitting device
  The gallium nitride-based compound semiconductor light-emitting device according to claim 1, wherein the transparent electrically conducting ﬁlm comprises a transparent electrically conducting ﬁlm contact layer and a transparent electrically conducting ﬁlm current diﬀusion layer, and the transparent electrically conducting ﬁlm current diﬀusion 3 AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₁₁₈₆₁₂ Appln. No.: 12/776,502 layer, and the transparent electrically conducting ﬁlm contact layer is in contact with the p-type semiconductor layer.
5. 15
  Dependent← claim 1metal oxide transparent electrically conducting film (broad group)gallium nitride-based compound semiconductor light-emitting device
  The gallium nitride-based compound semiconductor light-emitting device according to claim 1, wherein the transparent electrically conducting ﬁlm comprises an oxide of at least one metal selected from the group consisting of In, Sn, Zn, Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Ge, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Sb, Hf, Ta, W, Re, Os, Ir and Pt.
6. 17
  Dependent← claim 1gallium nitride-based compound semiconductor light-emitting device
  5 4 AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₁₁₈₆₁₂ Appln. No.: 12/776,502 17. A lamp comprising the gallium emitting device according to claim 1.
9
Independenttransparent electrically conducting filmgallium nitride-based compound semiconductor light-emitting device
The gallium nitride-based compound semiconductor light-emitting device according to claim wherein the thickness of the transparent electrically conducting ﬁlm contact layer is from 150 to 500 nm.
12
Independent
canceled
13
Independent
canceled
14
Independent
canceled
18
Independent
: An electronic device incorporating the lamp

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

gallium nitride-based compound semiconductor light-emitting device

transparent electrically conducting filmpositive electrode transparent electrically conducting film

positive electrode metal mixed layerpositive electrode metal mixed layer (interfacial)

gallium nitride-based compound semiconductorp-type semiconductor layer

gallium nitride-based compound semiconductorlight-emitting layer

gallium nitride-based compound semiconductorn-type semiconductor layer

Materials

Materials described outside the worked examples.

gallium nitride-based compound semiconductor

Semiconductor Layer Material (N-Type, Light-Emitting, P-Type Layers)

transparent electrically conducting film

Positive Electrode Transparent Conducting Film

Process steps

Additional fabrication and treatment steps described in the patent.

Sputtering

Step 1

Process details

layer:transparent electrically conducting film contact layer

method:RF sputtering

Materials:transparent electrically conducting film

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Temperature	300–700 °C	—
Thickness

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Gallium Nitride-Based Compound Semiconductor Light-Emitting Device | Matter42 Literature