Patent
US 12,528,711 B2POWDER OF GALLIUM NITRIDE AND METHOD FOR PRODUCING THE SAME
Yoshiro Kususe, Shinichi Hara, Junya Iihama, Masami Mesuda
TOSOH CORPORATION, Yamaguchi (JP)·Jan. 20, 2026·US
Copyright © 2026 Matter42. All rights reserved.
untamped bulk density of GaN powder | — | GaN |
average particle size of GaN powder | — | GaN |
ratio of area-10% size to area-90% size of GaN powder | — | GaN |
Temperature | ≤ 900 °C | — |
GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE
untamped bulk density of GaN powder | — | GaN |
average particle size of GaN powder | — | GaN |
ratio of area-10% size to area-90% size of GaN powder | — | GaN |
Temperature | ≤ 900 °C | — |
GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE
untamped bulk density of GaN powder | — | GaN |
average particle size of GaN powder | — | GaN |
ratio of area-10% size to area-90% size of GaN powder | — | GaN |
Temperature | ≤ 900 °C | — |
GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE
untamped bulk density of GaN powder | — | GaN |
average particle size of GaN powder | — | GaN |
ratio of area-10% size to area-90% size of GaN powder | — | GaN |
Temperature | ≤ 900 °C | — |
GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE