Patent
US 9,991,341METHOD FOR TREATING A GALLIUM NITRIDE LAYER COMPRISING DISLOCATIONS
ARNAUD YVON
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,991,341Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 A to 1 D are cross-section views sch em atically illustrating an example of an embodiment of a method for treating a gallium nitrid e substrate for the form in g of electronic components inside and on top of this substrate. [0020] For clarity, the same elements have been designated w it h …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-12. Canceled
Canceled
A semiconductor device comprising: a substrate; substrate and having a plurality of dislocations nitride layer; a recess extending through a first nitride layer at each dislocation; and a doped the first surface of the doped gallium nitride layer doped single-crystal gallium nitride bodies, each from the first and second surfaces. Currently
The semiconductor device according to claim layer on the doped gallium nitride layer and the Previously presented
The semiconductor device according to claim 14 wherein the doped gallium nitride layer, doped single-crystal gallium nitride bodies and the at least one additional layer define at least one of a Schottky diode, a PN power diode, a bipolar power transistor, a light-emitting diode, a heterojunction transistor, and a heterojunction diode. Previously presented
The semiconductor device according to claim 14 wherein a third surface of the at least one additional layer is coplanar with the first surface of the doped gallium nitride layer and the at least one additional layer is in direct contact with both the doped gallium nitride layer and each doped single-crystal gallium nitride body. New
The semiconductor device according to claim conductive. Previously presented
The semiconductor device according to claim semiconductor layer. Previously presented
The semiconductor device according to claim an insulating layer. Previously presented
The semiconductor device according to claim n-type material and the doped single-crystal gallium Previously presented
The semiconductor device according to claim p-type material and the doped single-crystal gallium Previously presented
The semiconductor device according to claim Previously presented
The semiconductor device according to claim range of 0.2 to 10 microns. Previously presented
The semiconductor device according to claim 0.001 to 0.5 microns. Previously presented
The semiconductor device according to claim dopant concentration in a range of 10 15 to 2*10
The semiconductor device according to claim nitride body has a dopant concentration greater a doped gallium nitride layer on said emerging at a first side of the doped gallium surface of the first side of the doped gallium single-crystal gallium nitride body in each recess, being coplanar with a second surface of the dislocation ending at a location spaced away amended 13, further comprising at least one additional doped single-crystal gallium nitride bodies. 14 wherein the at least one additional layer is 14 wherein the at least one additional layer is a 14 wherein the at least one additional layer is 13 wherein the doped gallium nitride layer is an nitride bodies are a p-type material. 13 wherein the doped gallium nitride layer is a nitride bodies are an n-type material. 13 wherein the substrate comprises silicon. 13 wherein each recess extends to a depth in a 13 wherein each recess has a width in a range of 13 wherein the doped gallium nitride layer has a 16 atom s/c m 3. Previously presented 13 wherein each doped single-crystal gallium than 1017 atoms/cm 3. Previously presented
A Schottky diode comprising: a doped gallium nitride layer having a dislocation emerging at a first surface of a first side of the doped gallium nitride layer; a recess extending into the first side of the doped gallium nitride layer at the dislocation; a doped single-crystal gallium nitride body in the recess, the doped single-cr y stal gallium nitride body interrupting the dislocation, a second surface of the first side of the doped gallium nitride layer being coplanar with a third surface of the doped single-crystal gallium nitride body; and a metal layer on the doped gallium nitride layer and doped single-crystal gallium nitride body. Currently amended
The Schottky diode according to claim 26 wherein the doped gallium nitride layer is an n-type material and the doped single-crystal gallium nitride body is a p-type material. Previously presented
The Schottky diode according to claim 26 wherein the doped gallium nitride layer is an n-type material and the doped single-crystal gallium nitride body is a p-type material. Previously presented
The Schottky diode according to claim 26 wherein the recess extends to a depth in a range of 0.2 to 10 microns. Previously presented
The Schottky diode according to claim 26 wherein the recess has a width in a range of 0.001 to 0.5 microns. Previously presented
The Schottky diode according to claim 26 wherein the doped gallium nitride layer has a dopant concentration in a range of 10 15 to 2* 10 16 atoms/cm 3. Previously presented
The Schottky diode according to claim 26 wherein the doped single-crystal gallium nitride body has a dopant concentration greater than 10 17 atoms/cm 3. Previously presented
The Schottky diode according to claim 26 wherein a fourth surface of the metal layer is coplanar with the second surface of the doped gallium nitride layer, the metal layer and the metal layer is in direct contact with both the doped gallium nitride layer and the each doped single-crystal gallium nitride body. New
A semiconductor device comprising: a doped gallium nitride layer having a plurality of dislocations-a 4 below a first surface, the doped gallium nitride layer having a first conductivity type; a recess extending through the first surface of the doped gallium nitride layer at ones of the plurality of dislocations, the ones of the plurality of dislocations ending at the recess; a doped single-crystal gallium nitride body -in filling each recess, the doped single-crystal gallium nitride body having a second conductivity type, a second surface of the doped single-crystal gallium nitride bodies coplanar with the first surface of the doped gallium nitride layer; and at least one additional layer on the doped gallium nitride layer and doped single- crystal gallium nitride bodies. Currently amended
The semiconductor device according to claim 33 wherein the at least one additional layer comprises an electrically conductive layer. Previously presented
The semiconductor device according to claim 33 wherein the at least one additional layer comprises a semiconductor layer. Previously presented
The semiconductor device according to claim 33 wherein the at least one additional layer comprises an insulating layer. Previously presented
The semiconductor device according to claim 33 further comprising a substrate supporting the doped gallium nitride layer. Previously presented
The semiconductor device according to claim 33 wherein the doped gallium nitride layer, doped single-crystal gallium nitride bodies and the at least one additional layer define at least one of a Schottky diode, a PN power diode, a bipolar power transistor, a light-emitting diode, a heterojunction transistor, and a heterojunction diode. Previously presented
The semiconductor device according to claim 33 wherein a third surface of the at least one additional layer is coplanar with the first surface of the doped gallium nitride layer and the at least one additional layer is in direct contact with both the doped gallium nitride layer and each doped single-crystal gallium nitride body. New
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with dislocation-interrupted GaN layer
Schottky diode
Materials described outside the worked examples.
doped gallium nitride layer (first conductivity type)
GaN
metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dopant Concentration Range | 1000000000000000–20000000000000000 atoms/cm3 | GaN |
Dopant Concentration Min | ≥ 100000000000000000 atoms/cm3 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,991,341Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 A to 1 D are cross-section views sch em atically illustrating an example of an embodiment of a method for treating a gallium nitrid e substrate for the form in g of electronic components inside and on top of this substrate. [0020] For clarity, the same elements have been designated w it h …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-12. Canceled
Canceled
A semiconductor device comprising: a substrate; substrate and having a plurality of dislocations nitride layer; a recess extending through a first nitride layer at each dislocation; and a doped the first surface of the doped gallium nitride layer doped single-crystal gallium nitride bodies, each from the first and second surfaces. Currently
The semiconductor device according to claim layer on the doped gallium nitride layer and the Previously presented
The semiconductor device according to claim 14 wherein the doped gallium nitride layer, doped single-crystal gallium nitride bodies and the at least one additional layer define at least one of a Schottky diode, a PN power diode, a bipolar power transistor, a light-emitting diode, a heterojunction transistor, and a heterojunction diode. Previously presented
The semiconductor device according to claim 14 wherein a third surface of the at least one additional layer is coplanar with the first surface of the doped gallium nitride layer and the at least one additional layer is in direct contact with both the doped gallium nitride layer and each doped single-crystal gallium nitride body. New
The semiconductor device according to claim conductive. Previously presented
The semiconductor device according to claim semiconductor layer. Previously presented
The semiconductor device according to claim an insulating layer. Previously presented
The semiconductor device according to claim n-type material and the doped single-crystal gallium Previously presented
The semiconductor device according to claim p-type material and the doped single-crystal gallium Previously presented
The semiconductor device according to claim Previously presented
The semiconductor device according to claim range of 0.2 to 10 microns. Previously presented
The semiconductor device according to claim 0.001 to 0.5 microns. Previously presented
The semiconductor device according to claim dopant concentration in a range of 10 15 to 2*10
The semiconductor device according to claim nitride body has a dopant concentration greater a doped gallium nitride layer on said emerging at a first side of the doped gallium surface of the first side of the doped gallium single-crystal gallium nitride body in each recess, being coplanar with a second surface of the dislocation ending at a location spaced away amended 13, further comprising at least one additional doped single-crystal gallium nitride bodies. 14 wherein the at least one additional layer is 14 wherein the at least one additional layer is a 14 wherein the at least one additional layer is 13 wherein the doped gallium nitride layer is an nitride bodies are a p-type material. 13 wherein the doped gallium nitride layer is a nitride bodies are an n-type material. 13 wherein the substrate comprises silicon. 13 wherein each recess extends to a depth in a 13 wherein each recess has a width in a range of 13 wherein the doped gallium nitride layer has a 16 atom s/c m 3. Previously presented 13 wherein each doped single-crystal gallium than 1017 atoms/cm 3. Previously presented
A Schottky diode comprising: a doped gallium nitride layer having a dislocation emerging at a first surface of a first side of the doped gallium nitride layer; a recess extending into the first side of the doped gallium nitride layer at the dislocation; a doped single-crystal gallium nitride body in the recess, the doped single-cr y stal gallium nitride body interrupting the dislocation, a second surface of the first side of the doped gallium nitride layer being coplanar with a third surface of the doped single-crystal gallium nitride body; and a metal layer on the doped gallium nitride layer and doped single-crystal gallium nitride body. Currently amended
The Schottky diode according to claim 26 wherein the doped gallium nitride layer is an n-type material and the doped single-crystal gallium nitride body is a p-type material. Previously presented
The Schottky diode according to claim 26 wherein the doped gallium nitride layer is an n-type material and the doped single-crystal gallium nitride body is a p-type material. Previously presented
The Schottky diode according to claim 26 wherein the recess extends to a depth in a range of 0.2 to 10 microns. Previously presented
The Schottky diode according to claim 26 wherein the recess has a width in a range of 0.001 to 0.5 microns. Previously presented
The Schottky diode according to claim 26 wherein the doped gallium nitride layer has a dopant concentration in a range of 10 15 to 2* 10 16 atoms/cm 3. Previously presented
The Schottky diode according to claim 26 wherein the doped single-crystal gallium nitride body has a dopant concentration greater than 10 17 atoms/cm 3. Previously presented
The Schottky diode according to claim 26 wherein a fourth surface of the metal layer is coplanar with the second surface of the doped gallium nitride layer, the metal layer and the metal layer is in direct contact with both the doped gallium nitride layer and the each doped single-crystal gallium nitride body. New
A semiconductor device comprising: a doped gallium nitride layer having a plurality of dislocations-a 4 below a first surface, the doped gallium nitride layer having a first conductivity type; a recess extending through the first surface of the doped gallium nitride layer at ones of the plurality of dislocations, the ones of the plurality of dislocations ending at the recess; a doped single-crystal gallium nitride body -in filling each recess, the doped single-crystal gallium nitride body having a second conductivity type, a second surface of the doped single-crystal gallium nitride bodies coplanar with the first surface of the doped gallium nitride layer; and at least one additional layer on the doped gallium nitride layer and doped single- crystal gallium nitride bodies. Currently amended
The semiconductor device according to claim 33 wherein the at least one additional layer comprises an electrically conductive layer. Previously presented
The semiconductor device according to claim 33 wherein the at least one additional layer comprises a semiconductor layer. Previously presented
The semiconductor device according to claim 33 wherein the at least one additional layer comprises an insulating layer. Previously presented
The semiconductor device according to claim 33 further comprising a substrate supporting the doped gallium nitride layer. Previously presented
The semiconductor device according to claim 33 wherein the doped gallium nitride layer, doped single-crystal gallium nitride bodies and the at least one additional layer define at least one of a Schottky diode, a PN power diode, a bipolar power transistor, a light-emitting diode, a heterojunction transistor, and a heterojunction diode. Previously presented
The semiconductor device according to claim 33 wherein a third surface of the at least one additional layer is coplanar with the first surface of the doped gallium nitride layer and the at least one additional layer is in direct contact with both the doped gallium nitride layer and each doped single-crystal gallium nitride body. New
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with dislocation-interrupted GaN layer
Schottky diode
Materials described outside the worked examples.
doped gallium nitride layer (first conductivity type)
GaN
metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dopant Concentration Range | 1000000000000000–20000000000000000 atoms/cm3 | GaN |
Dopant Concentration Min | ≥ 100000000000000000 atoms/cm3 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,991,341Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 A to 1 D are cross-section views sch em atically illustrating an example of an embodiment of a method for treating a gallium nitrid e substrate for the form in g of electronic components inside and on top of this substrate. [0020] For clarity, the same elements have been designated w it h …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-12. Canceled
Canceled
A semiconductor device comprising: a substrate; substrate and having a plurality of dislocations nitride layer; a recess extending through a first nitride layer at each dislocation; and a doped the first surface of the doped gallium nitride layer doped single-crystal gallium nitride bodies, each from the first and second surfaces. Currently
The semiconductor device according to claim layer on the doped gallium nitride layer and the Previously presented
The semiconductor device according to claim 14 wherein the doped gallium nitride layer, doped single-crystal gallium nitride bodies and the at least one additional layer define at least one of a Schottky diode, a PN power diode, a bipolar power transistor, a light-emitting diode, a heterojunction transistor, and a heterojunction diode. Previously presented
The semiconductor device according to claim 14 wherein a third surface of the at least one additional layer is coplanar with the first surface of the doped gallium nitride layer and the at least one additional layer is in direct contact with both the doped gallium nitride layer and each doped single-crystal gallium nitride body. New
The semiconductor device according to claim conductive. Previously presented
The semiconductor device according to claim semiconductor layer. Previously presented
The semiconductor device according to claim an insulating layer. Previously presented
The semiconductor device according to claim n-type material and the doped single-crystal gallium Previously presented
The semiconductor device according to claim p-type material and the doped single-crystal gallium Previously presented
The semiconductor device according to claim Previously presented
The semiconductor device according to claim range of 0.2 to 10 microns. Previously presented
The semiconductor device according to claim 0.001 to 0.5 microns. Previously presented
The semiconductor device according to claim dopant concentration in a range of 10 15 to 2*10
The semiconductor device according to claim nitride body has a dopant concentration greater a doped gallium nitride layer on said emerging at a first side of the doped gallium surface of the first side of the doped gallium single-crystal gallium nitride body in each recess, being coplanar with a second surface of the dislocation ending at a location spaced away amended 13, further comprising at least one additional doped single-crystal gallium nitride bodies. 14 wherein the at least one additional layer is 14 wherein the at least one additional layer is a 14 wherein the at least one additional layer is 13 wherein the doped gallium nitride layer is an nitride bodies are a p-type material. 13 wherein the doped gallium nitride layer is a nitride bodies are an n-type material. 13 wherein the substrate comprises silicon. 13 wherein each recess extends to a depth in a 13 wherein each recess has a width in a range of 13 wherein the doped gallium nitride layer has a 16 atom s/c m 3. Previously presented 13 wherein each doped single-crystal gallium than 1017 atoms/cm 3. Previously presented
A Schottky diode comprising: a doped gallium nitride layer having a dislocation emerging at a first surface of a first side of the doped gallium nitride layer; a recess extending into the first side of the doped gallium nitride layer at the dislocation; a doped single-crystal gallium nitride body in the recess, the doped single-cr y stal gallium nitride body interrupting the dislocation, a second surface of the first side of the doped gallium nitride layer being coplanar with a third surface of the doped single-crystal gallium nitride body; and a metal layer on the doped gallium nitride layer and doped single-crystal gallium nitride body. Currently amended
The Schottky diode according to claim 26 wherein the doped gallium nitride layer is an n-type material and the doped single-crystal gallium nitride body is a p-type material. Previously presented
The Schottky diode according to claim 26 wherein the doped gallium nitride layer is an n-type material and the doped single-crystal gallium nitride body is a p-type material. Previously presented
The Schottky diode according to claim 26 wherein the recess extends to a depth in a range of 0.2 to 10 microns. Previously presented
The Schottky diode according to claim 26 wherein the recess has a width in a range of 0.001 to 0.5 microns. Previously presented
The Schottky diode according to claim 26 wherein the doped gallium nitride layer has a dopant concentration in a range of 10 15 to 2* 10 16 atoms/cm 3. Previously presented
The Schottky diode according to claim 26 wherein the doped single-crystal gallium nitride body has a dopant concentration greater than 10 17 atoms/cm 3. Previously presented
The Schottky diode according to claim 26 wherein a fourth surface of the metal layer is coplanar with the second surface of the doped gallium nitride layer, the metal layer and the metal layer is in direct contact with both the doped gallium nitride layer and the each doped single-crystal gallium nitride body. New
A semiconductor device comprising: a doped gallium nitride layer having a plurality of dislocations-a 4 below a first surface, the doped gallium nitride layer having a first conductivity type; a recess extending through the first surface of the doped gallium nitride layer at ones of the plurality of dislocations, the ones of the plurality of dislocations ending at the recess; a doped single-crystal gallium nitride body -in filling each recess, the doped single-crystal gallium nitride body having a second conductivity type, a second surface of the doped single-crystal gallium nitride bodies coplanar with the first surface of the doped gallium nitride layer; and at least one additional layer on the doped gallium nitride layer and doped single- crystal gallium nitride bodies. Currently amended
The semiconductor device according to claim 33 wherein the at least one additional layer comprises an electrically conductive layer. Previously presented
The semiconductor device according to claim 33 wherein the at least one additional layer comprises a semiconductor layer. Previously presented
The semiconductor device according to claim 33 wherein the at least one additional layer comprises an insulating layer. Previously presented
The semiconductor device according to claim 33 further comprising a substrate supporting the doped gallium nitride layer. Previously presented
The semiconductor device according to claim 33 wherein the doped gallium nitride layer, doped single-crystal gallium nitride bodies and the at least one additional layer define at least one of a Schottky diode, a PN power diode, a bipolar power transistor, a light-emitting diode, a heterojunction transistor, and a heterojunction diode. Previously presented
The semiconductor device according to claim 33 wherein a third surface of the at least one additional layer is coplanar with the first surface of the doped gallium nitride layer and the at least one additional layer is in direct contact with both the doped gallium nitride layer and each doped single-crystal gallium nitride body. New
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with dislocation-interrupted GaN layer
Schottky diode
Materials described outside the worked examples.
doped gallium nitride layer (first conductivity type)
GaN
metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dopant Concentration Range | 1000000000000000–20000000000000000 atoms/cm3 | GaN |
Dopant Concentration Min | ≥ 100000000000000000 atoms/cm3 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,991,341Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 A to 1 D are cross-section views sch em atically illustrating an example of an embodiment of a method for treating a gallium nitrid e substrate for the form in g of electronic components inside and on top of this substrate. [0020] For clarity, the same elements have been designated w it h …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-12. Canceled
Canceled
A semiconductor device comprising: a substrate; substrate and having a plurality of dislocations nitride layer; a recess extending through a first nitride layer at each dislocation; and a doped the first surface of the doped gallium nitride layer doped single-crystal gallium nitride bodies, each from the first and second surfaces. Currently
The semiconductor device according to claim layer on the doped gallium nitride layer and the Previously presented
The semiconductor device according to claim 14 wherein the doped gallium nitride layer, doped single-crystal gallium nitride bodies and the at least one additional layer define at least one of a Schottky diode, a PN power diode, a bipolar power transistor, a light-emitting diode, a heterojunction transistor, and a heterojunction diode. Previously presented
The semiconductor device according to claim 14 wherein a third surface of the at least one additional layer is coplanar with the first surface of the doped gallium nitride layer and the at least one additional layer is in direct contact with both the doped gallium nitride layer and each doped single-crystal gallium nitride body. New
The semiconductor device according to claim conductive. Previously presented
The semiconductor device according to claim semiconductor layer. Previously presented
The semiconductor device according to claim an insulating layer. Previously presented
The semiconductor device according to claim n-type material and the doped single-crystal gallium Previously presented
The semiconductor device according to claim p-type material and the doped single-crystal gallium Previously presented
The semiconductor device according to claim Previously presented
The semiconductor device according to claim range of 0.2 to 10 microns. Previously presented
The semiconductor device according to claim 0.001 to 0.5 microns. Previously presented
The semiconductor device according to claim dopant concentration in a range of 10 15 to 2*10
The semiconductor device according to claim nitride body has a dopant concentration greater a doped gallium nitride layer on said emerging at a first side of the doped gallium surface of the first side of the doped gallium single-crystal gallium nitride body in each recess, being coplanar with a second surface of the dislocation ending at a location spaced away amended 13, further comprising at least one additional doped single-crystal gallium nitride bodies. 14 wherein the at least one additional layer is 14 wherein the at least one additional layer is a 14 wherein the at least one additional layer is 13 wherein the doped gallium nitride layer is an nitride bodies are a p-type material. 13 wherein the doped gallium nitride layer is a nitride bodies are an n-type material. 13 wherein the substrate comprises silicon. 13 wherein each recess extends to a depth in a 13 wherein each recess has a width in a range of 13 wherein the doped gallium nitride layer has a 16 atom s/c m 3. Previously presented 13 wherein each doped single-crystal gallium than 1017 atoms/cm 3. Previously presented
A Schottky diode comprising: a doped gallium nitride layer having a dislocation emerging at a first surface of a first side of the doped gallium nitride layer; a recess extending into the first side of the doped gallium nitride layer at the dislocation; a doped single-crystal gallium nitride body in the recess, the doped single-cr y stal gallium nitride body interrupting the dislocation, a second surface of the first side of the doped gallium nitride layer being coplanar with a third surface of the doped single-crystal gallium nitride body; and a metal layer on the doped gallium nitride layer and doped single-crystal gallium nitride body. Currently amended
The Schottky diode according to claim 26 wherein the doped gallium nitride layer is an n-type material and the doped single-crystal gallium nitride body is a p-type material. Previously presented
The Schottky diode according to claim 26 wherein the doped gallium nitride layer is an n-type material and the doped single-crystal gallium nitride body is a p-type material. Previously presented
The Schottky diode according to claim 26 wherein the recess extends to a depth in a range of 0.2 to 10 microns. Previously presented
The Schottky diode according to claim 26 wherein the recess has a width in a range of 0.001 to 0.5 microns. Previously presented
The Schottky diode according to claim 26 wherein the doped gallium nitride layer has a dopant concentration in a range of 10 15 to 2* 10 16 atoms/cm 3. Previously presented
The Schottky diode according to claim 26 wherein the doped single-crystal gallium nitride body has a dopant concentration greater than 10 17 atoms/cm 3. Previously presented
The Schottky diode according to claim 26 wherein a fourth surface of the metal layer is coplanar with the second surface of the doped gallium nitride layer, the metal layer and the metal layer is in direct contact with both the doped gallium nitride layer and the each doped single-crystal gallium nitride body. New
A semiconductor device comprising: a doped gallium nitride layer having a plurality of dislocations-a 4 below a first surface, the doped gallium nitride layer having a first conductivity type; a recess extending through the first surface of the doped gallium nitride layer at ones of the plurality of dislocations, the ones of the plurality of dislocations ending at the recess; a doped single-crystal gallium nitride body -in filling each recess, the doped single-crystal gallium nitride body having a second conductivity type, a second surface of the doped single-crystal gallium nitride bodies coplanar with the first surface of the doped gallium nitride layer; and at least one additional layer on the doped gallium nitride layer and doped single- crystal gallium nitride bodies. Currently amended
The semiconductor device according to claim 33 wherein the at least one additional layer comprises an electrically conductive layer. Previously presented
The semiconductor device according to claim 33 wherein the at least one additional layer comprises a semiconductor layer. Previously presented
The semiconductor device according to claim 33 wherein the at least one additional layer comprises an insulating layer. Previously presented
The semiconductor device according to claim 33 further comprising a substrate supporting the doped gallium nitride layer. Previously presented
The semiconductor device according to claim 33 wherein the doped gallium nitride layer, doped single-crystal gallium nitride bodies and the at least one additional layer define at least one of a Schottky diode, a PN power diode, a bipolar power transistor, a light-emitting diode, a heterojunction transistor, and a heterojunction diode. Previously presented
The semiconductor device according to claim 33 wherein a third surface of the at least one additional layer is coplanar with the first surface of the doped gallium nitride layer and the at least one additional layer is in direct contact with both the doped gallium nitride layer and each doped single-crystal gallium nitride body. New
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with dislocation-interrupted GaN layer
Schottky diode
Materials described outside the worked examples.
doped gallium nitride layer (first conductivity type)
GaN
metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dopant Concentration Range | 1000000000000000–20000000000000000 atoms/cm3 | GaN |
Dopant Concentration Min | ≥ 100000000000000000 atoms/cm3 |
Related documents with shared materials, methods, properties, or citations.
light-emitting diode
power semiconductor device (PN diode/bipolar transistor/heterojunction device)
substrate
silicon support
Si
P-type doped single-crystal gallium nitride layer
GaN:Mg
potassium hydroxide etching solution
KOH
orthophosphoric acid etching solution
H₃PO₄
Recess Depth Range | 0.2–10 microns | GaN |
Recess Width Range | 0.001–0.5 microns | GaN |
Layer Thickness Range | 0.2–15 microns | GaN:Mg |
Thickness | 0.2–10 µm | — |
Thickness | 0.001–0.5 µm | — |
light-emitting diode
power semiconductor device (PN diode/bipolar transistor/heterojunction device)
substrate
silicon support
Si
P-type doped single-crystal gallium nitride layer
GaN:Mg
potassium hydroxide etching solution
KOH
orthophosphoric acid etching solution
H₃PO₄
Recess Depth Range | 0.2–10 microns | GaN |
Recess Width Range | 0.001–0.5 microns | GaN |
Layer Thickness Range | 0.2–15 microns | GaN:Mg |
Thickness | 0.2–10 µm | — |
Thickness | 0.001–0.5 µm | — |
light-emitting diode
power semiconductor device (PN diode/bipolar transistor/heterojunction device)
substrate
silicon support
Si
P-type doped single-crystal gallium nitride layer
GaN:Mg
potassium hydroxide etching solution
KOH
orthophosphoric acid etching solution
H₃PO₄
Recess Depth Range | 0.2–10 microns | GaN |
Recess Width Range | 0.001–0.5 microns | GaN |
Layer Thickness Range | 0.2–15 microns | GaN:Mg |
Thickness | 0.2–10 µm | — |
Thickness | 0.001–0.5 µm | — |
light-emitting diode
power semiconductor device (PN diode/bipolar transistor/heterojunction device)
substrate
silicon support
Si
P-type doped single-crystal gallium nitride layer
GaN:Mg
potassium hydroxide etching solution
KOH
orthophosphoric acid etching solution
H₃PO₄
Recess Depth Range | 0.2–10 microns | GaN |
Recess Width Range | 0.001–0.5 microns | GaN |
Layer Thickness Range | 0.2–15 microns | GaN:Mg |
Thickness | 0.2–10 µm | — |
Thickness | 0.001–0.5 µm | — |