Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates

Paper

Atlas literature

Research paper

Experimental Characterization

B. Orfao, M. Abou Daher, H. Bouillaud, Y. Roelens et al.

2025·arXiv:2601.05958

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

2 preparations2 characterizations3 properties5 figures

ExperimentalGaNStudied MaterialAl₂O₃Substrate / Dielectric

2 preparations1 characterization2 properties4 figures

ExperimentalGaNStudied Material

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Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates | Matter42 Literature