Patent
US 11,168,393GALLIUM NITRIDE SINTERED BODY OR GALLIUM NITRIDE MOLDED ARTICLE, AND METHOD FOR PRODUCING SAME
Masami MESUDA
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,168,393Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A metal gallium-impregnated gallium nitride molded article, wherein the molded article comprises a gallium nitride phase having voids contained therein and a metal gallium phase which exist as separate phases, and the molded article has a molar ratio of Ga/(Ga + N) of 55 % to 80 %, wherein said gallium nitride phase has a density of 2.5 g/cm 3 to less than 5.0 g/cm 3 and a composition having an intensity ratio of a gallium oxide peak of the (002) plane to a gallium nitride peak of the (002) plane of less than 3 %, as determined by X-ray diffraction analysis. Currently amended
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein not less than 30 % of a total volume of said voids contained therein is filled with said metal gallium. Original
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein the molded article has density of 3.20 g/cm 3 to less than 6.05 g/cm 3. Original
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein the molded article has resistance of not higher than 1 Q cm. Original
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein the molded article contains oxygen in an amount of not more than 11 atm %. Original
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein said voids contained therein comprise open pores and closed pores, and the volume ratio of said open pores with respect to a total volume of said voids is not less than 70%. Original
A method of producing the metal gallium-impregnated gallium nitride molded article according to claim 1, wherein the method comprises impregnating a liquid metal gallium into a gallium nitride molded article having density of 2.0 g/cm 3 to less than 5.0 g/cm 3. Withdrawn
A gallium nitride sputtering target, comprising the metal gallium-impregnated gallium nitride molded article according to claim 1. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
metal gallium-impregnated gallium nitride molded article
gallium nitride sputtering target
Materials described outside the worked examples.
gallium nitride
GaN
metal gallium
Ga
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Ga2O3 (002) to GaN (002) XRD peak intensity ratio | ≤ 3 % | GaN |
gallium nitride phase density | 2.5–5 g/cm3 |
Table 1
The physical property values of the obtained gallium nitride powder are shown in Table 1.
p. 38
Table 3
SVG 16206346.
p. 39
Table 6
Table 6 shows whether or not RF sputtering and DC sputtering could
p. 58
Table 7
The measurement results are shown in Table 7.
p. 58
Related documents with shared materials, methods, properties, or citations.
Method for providing a GaN single crystal film on a buffer layer on a ScAlMgO4 substrate and performing cooling so that the GaN film is peeled from the ScAlMgO4 substrate
Oxides with Thin Metallic Layers as Transparent Ohmic Contacts for P-Type and N-Type Gallium Nitride
Patent
Atlas literature
Patent
US 11,168,393Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A metal gallium-impregnated gallium nitride molded article, wherein the molded article comprises a gallium nitride phase having voids contained therein and a metal gallium phase which exist as separate phases, and the molded article has a molar ratio of Ga/(Ga + N) of 55 % to 80 %, wherein said gallium nitride phase has a density of 2.5 g/cm 3 to less than 5.0 g/cm 3 and a composition having an intensity ratio of a gallium oxide peak of the (002) plane to a gallium nitride peak of the (002) plane of less than 3 %, as determined by X-ray diffraction analysis. Currently amended
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein not less than 30 % of a total volume of said voids contained therein is filled with said metal gallium. Original
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein the molded article has density of 3.20 g/cm 3 to less than 6.05 g/cm 3. Original
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein the molded article has resistance of not higher than 1 Q cm. Original
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein the molded article contains oxygen in an amount of not more than 11 atm %. Original
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein said voids contained therein comprise open pores and closed pores, and the volume ratio of said open pores with respect to a total volume of said voids is not less than 70%. Original
A method of producing the metal gallium-impregnated gallium nitride molded article according to claim 1, wherein the method comprises impregnating a liquid metal gallium into a gallium nitride molded article having density of 2.0 g/cm 3 to less than 5.0 g/cm 3. Withdrawn
A gallium nitride sputtering target, comprising the metal gallium-impregnated gallium nitride molded article according to claim 1. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
metal gallium-impregnated gallium nitride molded article
gallium nitride sputtering target
Materials described outside the worked examples.
gallium nitride
GaN
metal gallium
Ga
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Ga2O3 (002) to GaN (002) XRD peak intensity ratio | ≤ 3 % | GaN |
gallium nitride phase density | 2.5–5 g/cm3 |
Table 1
The physical property values of the obtained gallium nitride powder are shown in Table 1.
p. 38
Table 3
SVG 16206346.
p. 39
Table 6
Table 6 shows whether or not RF sputtering and DC sputtering could
p. 58
Table 7
The measurement results are shown in Table 7.
p. 58
Related documents with shared materials, methods, properties, or citations.
Method for providing a GaN single crystal film on a buffer layer on a ScAlMgO4 substrate and performing cooling so that the GaN film is peeled from the ScAlMgO4 substrate
Oxides with Thin Metallic Layers as Transparent Ohmic Contacts for P-Type and N-Type Gallium Nitride
Patent
Atlas literature
Patent
US 11,168,393Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A metal gallium-impregnated gallium nitride molded article, wherein the molded article comprises a gallium nitride phase having voids contained therein and a metal gallium phase which exist as separate phases, and the molded article has a molar ratio of Ga/(Ga + N) of 55 % to 80 %, wherein said gallium nitride phase has a density of 2.5 g/cm 3 to less than 5.0 g/cm 3 and a composition having an intensity ratio of a gallium oxide peak of the (002) plane to a gallium nitride peak of the (002) plane of less than 3 %, as determined by X-ray diffraction analysis. Currently amended
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein not less than 30 % of a total volume of said voids contained therein is filled with said metal gallium. Original
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein the molded article has density of 3.20 g/cm 3 to less than 6.05 g/cm 3. Original
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein the molded article has resistance of not higher than 1 Q cm. Original
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein the molded article contains oxygen in an amount of not more than 11 atm %. Original
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein said voids contained therein comprise open pores and closed pores, and the volume ratio of said open pores with respect to a total volume of said voids is not less than 70%. Original
A method of producing the metal gallium-impregnated gallium nitride molded article according to claim 1, wherein the method comprises impregnating a liquid metal gallium into a gallium nitride molded article having density of 2.0 g/cm 3 to less than 5.0 g/cm 3. Withdrawn
A gallium nitride sputtering target, comprising the metal gallium-impregnated gallium nitride molded article according to claim 1. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
metal gallium-impregnated gallium nitride molded article
gallium nitride sputtering target
Materials described outside the worked examples.
gallium nitride
GaN
metal gallium
Ga
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Ga2O3 (002) to GaN (002) XRD peak intensity ratio | ≤ 3 % | GaN |
gallium nitride phase density | 2.5–5 g/cm3 |
Table 1
The physical property values of the obtained gallium nitride powder are shown in Table 1.
p. 38
Table 3
SVG 16206346.
p. 39
Table 6
Table 6 shows whether or not RF sputtering and DC sputtering could
p. 58
Table 7
The measurement results are shown in Table 7.
p. 58
Related documents with shared materials, methods, properties, or citations.
Method for providing a GaN single crystal film on a buffer layer on a ScAlMgO4 substrate and performing cooling so that the GaN film is peeled from the ScAlMgO4 substrate
Oxides with Thin Metallic Layers as Transparent Ohmic Contacts for P-Type and N-Type Gallium Nitride
Patent
Atlas literature
Patent
US 11,168,393Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A metal gallium-impregnated gallium nitride molded article, wherein the molded article comprises a gallium nitride phase having voids contained therein and a metal gallium phase which exist as separate phases, and the molded article has a molar ratio of Ga/(Ga + N) of 55 % to 80 %, wherein said gallium nitride phase has a density of 2.5 g/cm 3 to less than 5.0 g/cm 3 and a composition having an intensity ratio of a gallium oxide peak of the (002) plane to a gallium nitride peak of the (002) plane of less than 3 %, as determined by X-ray diffraction analysis. Currently amended
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein not less than 30 % of a total volume of said voids contained therein is filled with said metal gallium. Original
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein the molded article has density of 3.20 g/cm 3 to less than 6.05 g/cm 3. Original
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein the molded article has resistance of not higher than 1 Q cm. Original
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein the molded article contains oxygen in an amount of not more than 11 atm %. Original
The metal gallium-impregnated gallium nitride molded article according to claim 1, wherein said voids contained therein comprise open pores and closed pores, and the volume ratio of said open pores with respect to a total volume of said voids is not less than 70%. Original
A method of producing the metal gallium-impregnated gallium nitride molded article according to claim 1, wherein the method comprises impregnating a liquid metal gallium into a gallium nitride molded article having density of 2.0 g/cm 3 to less than 5.0 g/cm 3. Withdrawn
A gallium nitride sputtering target, comprising the metal gallium-impregnated gallium nitride molded article according to claim 1. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
metal gallium-impregnated gallium nitride molded article
gallium nitride sputtering target
Materials described outside the worked examples.
gallium nitride
GaN
metal gallium
Ga
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Ga2O3 (002) to GaN (002) XRD peak intensity ratio | ≤ 3 % | GaN |
gallium nitride phase density | 2.5–5 g/cm3 |
Table 1
The physical property values of the obtained gallium nitride powder are shown in Table 1.
p. 38
Table 3
SVG 16206346.
p. 39
Table 6
Table 6 shows whether or not RF sputtering and DC sputtering could
p. 58
Table 7
The measurement results are shown in Table 7.
p. 58
Related documents with shared materials, methods, properties, or citations.
Method for providing a GaN single crystal film on a buffer layer on a ScAlMgO4 substrate and performing cooling so that the GaN film is peeled from the ScAlMgO4 substrate
Oxides with Thin Metallic Layers as Transparent Ohmic Contacts for P-Type and N-Type Gallium Nitride
gallium oxide
Ga₂O₃
metal gallium-impregnated GaN molded article density | 3.2–6.05 g/cm3 | — |
molded article electrical resistance | ≤ 1 Ohm·cm | — |
oxygen content of molded article | ≤ 11 atm% | — |
Ga/(Ga+N) molar ratio of molded article | 55–80 % | — |
fraction of void volume filled with metal gallium | ≥ 30 % | Ga |
volume ratio of open pores to total voids | ≥ 70 % | — |
Ga2O3 (002) to GaN (002) XRD peak intensity ratio — preferred upper limit | ≤ 1 % | GaN |
oxygen content of GaN sintered body — preferred | ≤ 11 atm% | GaN |
GaN sintered body density — preferred range | 3–4.5 g/cm3 | GaN |
Pressure | ≥ 11 atm | — |
Pressure | 10–300 MPa | — |
Pressure | ≤ 10 MPa | — |
gallium oxide
Ga₂O₃
metal gallium-impregnated GaN molded article density | 3.2–6.05 g/cm3 | — |
molded article electrical resistance | ≤ 1 Ohm·cm | — |
oxygen content of molded article | ≤ 11 atm% | — |
Ga/(Ga+N) molar ratio of molded article | 55–80 % | — |
fraction of void volume filled with metal gallium | ≥ 30 % | Ga |
volume ratio of open pores to total voids | ≥ 70 % | — |
Ga2O3 (002) to GaN (002) XRD peak intensity ratio — preferred upper limit | ≤ 1 % | GaN |
oxygen content of GaN sintered body — preferred | ≤ 11 atm% | GaN |
GaN sintered body density — preferred range | 3–4.5 g/cm3 | GaN |
Pressure | ≥ 11 atm | — |
Pressure | 10–300 MPa | — |
Pressure | ≤ 10 MPa | — |
gallium oxide
Ga₂O₃
metal gallium-impregnated GaN molded article density | 3.2–6.05 g/cm3 | — |
molded article electrical resistance | ≤ 1 Ohm·cm | — |
oxygen content of molded article | ≤ 11 atm% | — |
Ga/(Ga+N) molar ratio of molded article | 55–80 % | — |
fraction of void volume filled with metal gallium | ≥ 30 % | Ga |
volume ratio of open pores to total voids | ≥ 70 % | — |
Ga2O3 (002) to GaN (002) XRD peak intensity ratio — preferred upper limit | ≤ 1 % | GaN |
oxygen content of GaN sintered body — preferred | ≤ 11 atm% | GaN |
GaN sintered body density — preferred range | 3–4.5 g/cm3 | GaN |
Pressure | ≥ 11 atm | — |
Pressure | 10–300 MPa | — |
Pressure | ≤ 10 MPa | — |
gallium oxide
Ga₂O₃
metal gallium-impregnated GaN molded article density | 3.2–6.05 g/cm3 | — |
molded article electrical resistance | ≤ 1 Ohm·cm | — |
oxygen content of molded article | ≤ 11 atm% | — |
Ga/(Ga+N) molar ratio of molded article | 55–80 % | — |
fraction of void volume filled with metal gallium | ≥ 30 % | Ga |
volume ratio of open pores to total voids | ≥ 70 % | — |
Ga2O3 (002) to GaN (002) XRD peak intensity ratio — preferred upper limit | ≤ 1 % | GaN |
oxygen content of GaN sintered body — preferred | ≤ 11 atm% | GaN |
GaN sintered body density — preferred range | 3–4.5 g/cm3 | GaN |
Pressure | ≥ 11 atm | — |
Pressure | 10–300 MPa | — |
Pressure | ≤ 10 MPa | — |