Patent
US 9,006,083Epitaxially Growing GaN Layers on Silicon (100) Wafers
Ananda H. Kumar
US
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Atlas literature
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US 9,006,083Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-10. canceled
(Previously amended) A method comprising providing a single crystal silicon substrate, wherein the silicon substrate comprises a first side having (100) crystal orientation; mixing glass powder with polymeric binders to form a ceramic material, wherein the glass powder has coefficient of thermal expansion (C TE) higher than that of GaN; disposing the ceramic material to a second side of the silicon substrate to form a composite substrate, wherein the second side is opposite to the first side; sintering the composite substrate to bond the ceramic material with the silicon substrate; wet etching the first side to form pyramidal surface textures, wherein the pyramidal surface textures comprise (111) crystal orientation; depositing a buffer layer on the pyramidal surface textures; depositing a layer of GaN on the buffer layer.
A method as in claim 11 wherein wet etching comprises etching in a solution of potassium hydroxide or tetramethyl ammonium hydroxide.
(Previously amended) A method as in claim 11 wherein the effective C T E of the sintered composite substrate is higher than that of GaN so that the deposited GaN layer does not crack when cooled to room temperature.
A method as in claim 11 wherein the ceramic material comprises a magnesium oxide-aluminum oxide-silicon oxide composition.
A method as in claim 11 wherein sintering comprises annealing at temperature 850 to 950 C.
A method as in claim 11 wherein the thickness of the silicon substrate is less than 50 microns.
A method as in claim 11 further comprising applying an adhesive to the first side of the silicon
Layer stacks claimed or described, ordered top of device to substrate.
composite GaN-on-silicon substrate structure
Materials described outside the worked examples.
single crystal silicon substrate
Si
ceramic material (glass powder with polymeric binders)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 50 µm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,006,083Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-10. canceled
(Previously amended) A method comprising providing a single crystal silicon substrate, wherein the silicon substrate comprises a first side having (100) crystal orientation; mixing glass powder with polymeric binders to form a ceramic material, wherein the glass powder has coefficient of thermal expansion (C TE) higher than that of GaN; disposing the ceramic material to a second side of the silicon substrate to form a composite substrate, wherein the second side is opposite to the first side; sintering the composite substrate to bond the ceramic material with the silicon substrate; wet etching the first side to form pyramidal surface textures, wherein the pyramidal surface textures comprise (111) crystal orientation; depositing a buffer layer on the pyramidal surface textures; depositing a layer of GaN on the buffer layer.
A method as in claim 11 wherein wet etching comprises etching in a solution of potassium hydroxide or tetramethyl ammonium hydroxide.
(Previously amended) A method as in claim 11 wherein the effective C T E of the sintered composite substrate is higher than that of GaN so that the deposited GaN layer does not crack when cooled to room temperature.
A method as in claim 11 wherein the ceramic material comprises a magnesium oxide-aluminum oxide-silicon oxide composition.
A method as in claim 11 wherein sintering comprises annealing at temperature 850 to 950 C.
A method as in claim 11 wherein the thickness of the silicon substrate is less than 50 microns.
A method as in claim 11 further comprising applying an adhesive to the first side of the silicon
Layer stacks claimed or described, ordered top of device to substrate.
composite GaN-on-silicon substrate structure
Materials described outside the worked examples.
single crystal silicon substrate
Si
ceramic material (glass powder with polymeric binders)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 50 µm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,006,083Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-10. canceled
(Previously amended) A method comprising providing a single crystal silicon substrate, wherein the silicon substrate comprises a first side having (100) crystal orientation; mixing glass powder with polymeric binders to form a ceramic material, wherein the glass powder has coefficient of thermal expansion (C TE) higher than that of GaN; disposing the ceramic material to a second side of the silicon substrate to form a composite substrate, wherein the second side is opposite to the first side; sintering the composite substrate to bond the ceramic material with the silicon substrate; wet etching the first side to form pyramidal surface textures, wherein the pyramidal surface textures comprise (111) crystal orientation; depositing a buffer layer on the pyramidal surface textures; depositing a layer of GaN on the buffer layer.
A method as in claim 11 wherein wet etching comprises etching in a solution of potassium hydroxide or tetramethyl ammonium hydroxide.
(Previously amended) A method as in claim 11 wherein the effective C T E of the sintered composite substrate is higher than that of GaN so that the deposited GaN layer does not crack when cooled to room temperature.
A method as in claim 11 wherein the ceramic material comprises a magnesium oxide-aluminum oxide-silicon oxide composition.
A method as in claim 11 wherein sintering comprises annealing at temperature 850 to 950 C.
A method as in claim 11 wherein the thickness of the silicon substrate is less than 50 microns.
A method as in claim 11 further comprising applying an adhesive to the first side of the silicon
Layer stacks claimed or described, ordered top of device to substrate.
composite GaN-on-silicon substrate structure
Materials described outside the worked examples.
single crystal silicon substrate
Si
ceramic material (glass powder with polymeric binders)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 50 µm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,006,083Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-10. canceled
(Previously amended) A method comprising providing a single crystal silicon substrate, wherein the silicon substrate comprises a first side having (100) crystal orientation; mixing glass powder with polymeric binders to form a ceramic material, wherein the glass powder has coefficient of thermal expansion (C TE) higher than that of GaN; disposing the ceramic material to a second side of the silicon substrate to form a composite substrate, wherein the second side is opposite to the first side; sintering the composite substrate to bond the ceramic material with the silicon substrate; wet etching the first side to form pyramidal surface textures, wherein the pyramidal surface textures comprise (111) crystal orientation; depositing a buffer layer on the pyramidal surface textures; depositing a layer of GaN on the buffer layer.
A method as in claim 11 wherein wet etching comprises etching in a solution of potassium hydroxide or tetramethyl ammonium hydroxide.
(Previously amended) A method as in claim 11 wherein the effective C T E of the sintered composite substrate is higher than that of GaN so that the deposited GaN layer does not crack when cooled to room temperature.
A method as in claim 11 wherein the ceramic material comprises a magnesium oxide-aluminum oxide-silicon oxide composition.
A method as in claim 11 wherein sintering comprises annealing at temperature 850 to 950 C.
A method as in claim 11 wherein the thickness of the silicon substrate is less than 50 microns.
A method as in claim 11 further comprising applying an adhesive to the first side of the silicon
Layer stacks claimed or described, ordered top of device to substrate.
composite GaN-on-silicon substrate structure
Materials described outside the worked examples.
single crystal silicon substrate
Si
ceramic material (glass powder with polymeric binders)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 50 µm | — |
Related documents with shared materials, methods, properties, or citations.
buffer layer
GaN layer
GaN
potassium hydroxide
KOH
tetramethyl ammonium hydroxide
TMAH
magnesium oxide-aluminum oxide-silicon oxide composition
MgO-Al₂O₃-SiO₂
buffer layer
GaN layer
GaN
potassium hydroxide
KOH
tetramethyl ammonium hydroxide
TMAH
magnesium oxide-aluminum oxide-silicon oxide composition
MgO-Al₂O₃-SiO₂
buffer layer
GaN layer
GaN
potassium hydroxide
KOH
tetramethyl ammonium hydroxide
TMAH
magnesium oxide-aluminum oxide-silicon oxide composition
MgO-Al₂O₃-SiO₂
buffer layer
GaN layer
GaN
potassium hydroxide
KOH
tetramethyl ammonium hydroxide
TMAH
magnesium oxide-aluminum oxide-silicon oxide composition
MgO-Al₂O₃-SiO₂