Two-photon interference from a quantum emitter in hexagonal boron nitride

Clarisse Fournier; Sébastien Roux; Kenji Watanabe; Takashi Taniguchi; Stéphanie Buil; Julien Barjon; Jean-Pierre Hermier; Aymeric Delteil

doi:10.1103/PhysRevApplied.19.L041003

Paper details

Research paper

Experimental CharacterizationTheoretical

Two-photon interference from a quantum emitter in hexagonal boron nitride

Clarisse Fournier, Sébastien Roux, Kenji Watanabe, Takashi Taniguchi et al.

arXiv·2023·10.1103/PhysRevApplied.19.L041003·arXiv:2210.05590

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si substrate and irradiated by a focused electron beam to create B-center quantum emitters.

2 characterizations5 properties3 figures

ExperimentalhBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

Materials

hexagonal boron nitride

hBN

Studied Material

Also known as

hBNhexagonal boron nitride

studied material

SiO₂

Substrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Two-photon interference from a quantum emitter in hexagonal boron nitride | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	436.24nm	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—
Fet On Off Ratio	g(2)_HBT(0)	0.14	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—
Fet On Off Ratio	HOM visibility	0.44	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—
Fet On Off Ratio	corrected HOM visibility	0.56	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—
Fet On Off Ratio	dephasing time	1.5ns	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	436.24nm	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—
Fet On Off Ratio	g(2)_HBT(0)	0.14	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—
Fet On Off Ratio	HOM visibility	0.44	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—
Fet On Off Ratio	corrected HOM visibility	0.56	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—
Fet On Off Ratio	dephasing time	1.5ns	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	436.24nm	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—
Fet On Off Ratio	g(2)_HBT(0)	0.14	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—
Fet On Off Ratio	HOM visibility	0.44	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—
Fet On Off Ratio	corrected HOM visibility	0.56	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—
Fet On Off Ratio	dephasing time	1.5ns	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	436.24nm	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—
Fet On Off Ratio	g(2)_HBT(0)	0.14	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—
Fet On Off Ratio	HOM visibility	0.44	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—
Fet On Off Ratio	corrected HOM visibility	0.56	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—
Fet On Off Ratio	dephasing time	1.5ns	hBN	A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si subst	—

Two-photon interference from a quantum emitter in hexagonal boron nitride

Samples

A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si substrate and irradiated by a focused electron beam to create B-center quantum emitters.

Materials

Why these are connected

Two-photon interference from a quantum emitter in hexagonal boron nitride

Samples

A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si substrate and irradiated by a focused electron beam to create B-center quantum emitters.

Materials

Why these are connected

Two-photon interference from a quantum emitter in hexagonal boron nitride

Samples

A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si substrate and irradiated by a focused electron beam to create B-center quantum emitters.

Materials

Why these are connected

Two-photon interference from a quantum emitter in hexagonal boron nitride

Samples

A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si substrate and irradiated by a focused electron beam to create B-center quantum emitters.

Materials

Why these are connected

Two-photon interference from a quantum emitter in hexagonal boron nitride

Samples

A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si substrate and irradiated by a focused electron beam to create B-center quantum emitters.

Materials

Why these are connected

Two-photon interference from a quantum emitter in hexagonal boron nitride

Samples

A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si substrate and irradiated by a focused electron beam to create B-center quantum emitters.

Materials

Why these are connected

Two-photon interference from a quantum emitter in hexagonal boron nitride

Samples

A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si substrate and irradiated by a focused electron beam to create B-center quantum emitters.

Materials

Why these are connected

Two-photon interference from a quantum emitter in hexagonal boron nitride

Samples

A single hBN crystal exfoliated onto a SiO₂(285 nm)/Si substrate and irradiated by a focused electron beam to create B-center quantum emitters.

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations