Near-coherent quantum emitters in hexagonal boron nitride with discrete polarization axes

Jake Horder; Dominic Scognamiglio; Ádám Ganyecz; Viktor Ivády; Nathan Coste; Mehran Kianinia; Milos Toth; Igor Aharonovich

doi:10.1021/acsphotonics.4c01297

Paper details

Research paper

Experimental CharacterizationTheoretical

Near-coherent quantum emitters in hexagonal boron nitride with discrete polarization axes

Jake Horder, Dominic Scognamiglio, Ádám Ganyecz, Viktor Ivády et al.

2007·10.1021/acsphotonics.4c01297·arXiv:2402.11786

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Mechanically exfoliated hBN flake on Si/SiO₂ substrate, annealed and then patterned by electron-beam irradiation to create B center ensembles; the same flake also contains isolated B center emitters used for resonant spectroscopy.

2 preparations1 characterization17 properties4 figures

ExperimentalhBNStudied Material

Materials

hexagonal boron nitride

hBN

Studied Material

Also known as

hBNhexagonal boron nitride

studied material

SiO₂

Substrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Near-coherent quantum emitters in hexagonal boron nitride with discrete polarization axes | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	436nm	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	PSB	460nm	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Fet On Off Ratio	g(2)(0)	0.4	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	saturation maximum intensity	34.83kcps	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	resonant linewidth	27.12GHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	spectral hole width	0.3GHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	saturation maximum intensity	16.31kcps	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	resonant linewidth	40.88GHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	minimum hole width	0.4GHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	homogeneous linewidth	150MHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	coherence time T₂	2.12ns	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	half-maximum saturation power	4.69uW	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	half-maximum saturation power	6.79uW	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	polarization visibility	0.6	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	JT energy	43meV	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	JT barrier energy	39meV	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	coupled phonon energy	97meV	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	436nm	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	PSB	460nm	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Fet On Off Ratio	g(2)(0)	0.4	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	saturation maximum intensity	34.83kcps	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	resonant linewidth	27.12GHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	spectral hole width	0.3GHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	saturation maximum intensity	16.31kcps	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	resonant linewidth	40.88GHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	minimum hole width	0.4GHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	homogeneous linewidth	150MHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	coherence time T₂	2.12ns	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	half-maximum saturation power	4.69uW	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	half-maximum saturation power	6.79uW	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	polarization visibility	0.6	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	JT energy	43meV	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	JT barrier energy	39meV	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	coupled phonon energy	97meV	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	436nm	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	PSB	460nm	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Fet On Off Ratio	g(2)(0)	0.4	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	saturation maximum intensity	34.83kcps	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	resonant linewidth	27.12GHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	spectral hole width	0.3GHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	saturation maximum intensity	16.31kcps	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	resonant linewidth	40.88GHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	minimum hole width	0.4GHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	homogeneous linewidth	150MHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	coherence time T₂	2.12ns	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	half-maximum saturation power	4.69uW	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	half-maximum saturation power	6.79uW	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	polarization visibility	0.6	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	JT energy	43meV	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	JT barrier energy	39meV	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	coupled phonon energy	97meV	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	436nm	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	PSB	460nm	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Fet On Off Ratio	g(2)(0)	0.4	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	saturation maximum intensity	34.83kcps	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	resonant linewidth	27.12GHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	spectral hole width	0.3GHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	saturation maximum intensity	16.31kcps	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	resonant linewidth	40.88GHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	minimum hole width	0.4GHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	homogeneous linewidth	150MHz	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	coherence time T₂	2.12ns	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	half-maximum saturation power	4.69uW	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	half-maximum saturation power	6.79uW	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
Pl Peak Intensity	polarization visibility	0.6	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	JT energy	43meV	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	JT barrier energy	39meV	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—
PL Peak	coupled phonon energy	97meV	hBN	Mechanically exfoliated hBN flake on Si/SiO₂ substrate, anne	—

Near-coherent quantum emitters in hexagonal boron nitride with discrete polarization axes

Samples

Mechanically exfoliated hBN flake on Si/SiO₂ substrate, annealed and then patterned by electron-beam irradiation to create B center ensembles; the same flake also contains isolated B center emitters used for resonant spectroscopy.

Materials

Why these are connected

Near-coherent quantum emitters in hexagonal boron nitride with discrete polarization axes

Samples

Mechanically exfoliated hBN flake on Si/SiO₂ substrate, annealed and then patterned by electron-beam irradiation to create B center ensembles; the same flake also contains isolated B center emitters used for resonant spectroscopy.

Materials

Why these are connected

Near-coherent quantum emitters in hexagonal boron nitride with discrete polarization axes

Samples

Mechanically exfoliated hBN flake on Si/SiO₂ substrate, annealed and then patterned by electron-beam irradiation to create B center ensembles; the same flake also contains isolated B center emitters used for resonant spectroscopy.

Materials

Why these are connected

Near-coherent quantum emitters in hexagonal boron nitride with discrete polarization axes

Samples

Mechanically exfoliated hBN flake on Si/SiO₂ substrate, annealed and then patterned by electron-beam irradiation to create B center ensembles; the same flake also contains isolated B center emitters used for resonant spectroscopy.

Materials

Why these are connected

Near-coherent quantum emitters in hexagonal boron nitride with discrete polarization axes

Samples

Mechanically exfoliated hBN flake on Si/SiO₂ substrate, annealed and then patterned by electron-beam irradiation to create B center ensembles; the same flake also contains isolated B center emitters used for resonant spectroscopy.

Materials

Why these are connected

Near-coherent quantum emitters in hexagonal boron nitride with discrete polarization axes

Samples

Mechanically exfoliated hBN flake on Si/SiO₂ substrate, annealed and then patterned by electron-beam irradiation to create B center ensembles; the same flake also contains isolated B center emitters used for resonant spectroscopy.

Materials

Why these are connected

Near-coherent quantum emitters in hexagonal boron nitride with discrete polarization axes

Samples

Mechanically exfoliated hBN flake on Si/SiO₂ substrate, annealed and then patterned by electron-beam irradiation to create B center ensembles; the same flake also contains isolated B center emitters used for resonant spectroscopy.

Materials

Why these are connected

Near-coherent quantum emitters in hexagonal boron nitride with discrete polarization axes

Samples

Mechanically exfoliated hBN flake on Si/SiO₂ substrate, annealed and then patterned by electron-beam irradiation to create B center ensembles; the same flake also contains isolated B center emitters used for resonant spectroscopy.

Materials

Why these are connected

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations