Investigating the fast spectral diffusion of a quantum emitter in hBN using resonant excitation and photon correlations

Clarisse Fournier; Kenji Watanabe; Takashi Taniguchi; Julien Barjon; Stéphanie Buil; Jean-Pierre Hermier; Aymeric Delteil

doi:10.5281/zenodo.7938744

Paper details

Research paper

Experimental Characterization

Investigating the fast spectral diffusion of a quantum emitter in hBN using resonant excitation and photon correlations

Clarisse Fournier, Kenji Watanabe, Takashi Taniguchi, Julien Barjon et al.

arXiv preprint·2023·10.5281/zenodo.7938744·arXiv:2303.05315

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrate and irradiated with an electron beam to generate a B-center quantum emitter.

1 preparation3 characterizations3 properties2 figures

ExperimentalhBNStudied Material

Materials

hexagonal boron nitride

hBN

Studied Material

Also known as

hBN

studied material

silicon dioxide

SiO₂

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Investigating the fast spectral diffusion of a quantum emitter in hBN using resonant excitation and photon correlations | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Pl Peak Shift	phonon sideband separation	160meV	hBN	Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrat	—
Fet Threshold Voltage	excited-state lifetime T₁	1.83ns	hBN	Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrat	—
PL Peak	inhomogeneous linewidth	4GHz	hBN	Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrat	—

Properties

Type	Label	Value	Material	Sample	Source
Pl Peak Shift	phonon sideband separation	160meV	hBN	Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrat	—
Fet Threshold Voltage	excited-state lifetime T₁	1.83ns	hBN	Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrat	—
PL Peak	inhomogeneous linewidth	4GHz	hBN	Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrat	—

Properties

Type	Label	Value	Material	Sample	Source
Pl Peak Shift	phonon sideband separation	160meV	hBN	Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrat	—
Fet Threshold Voltage	excited-state lifetime T₁	1.83ns	hBN	Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrat	—
PL Peak	inhomogeneous linewidth	4GHz	hBN	Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrat	—

Properties

Type	Label	Value	Material	Sample	Source
Pl Peak Shift	phonon sideband separation	160meV	hBN	Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrat	—
Fet Threshold Voltage	excited-state lifetime T₁	1.83ns	hBN	Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrat	—
PL Peak	inhomogeneous linewidth	4GHz	hBN	Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrat	—

Investigating the fast spectral diffusion of a quantum emitter in hBN using resonant excitation and photon correlations

Samples

Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrate and irradiated with an electron beam to generate a B-center quantum emitter.

Materials

Why these are connected

Investigating the fast spectral diffusion of a quantum emitter in hBN using resonant excitation and photon correlations

Samples

Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrate and irradiated with an electron beam to generate a B-center quantum emitter.

Materials

Why these are connected

Investigating the fast spectral diffusion of a quantum emitter in hBN using resonant excitation and photon correlations

Samples

Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrate and irradiated with an electron beam to generate a B-center quantum emitter.

Materials

Why these are connected

Investigating the fast spectral diffusion of a quantum emitter in hBN using resonant excitation and photon correlations

Samples

Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrate and irradiated with an electron beam to generate a B-center quantum emitter.

Materials

Why these are connected

Investigating the fast spectral diffusion of a quantum emitter in hBN using resonant excitation and photon correlations

Samples

Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrate and irradiated with an electron beam to generate a B-center quantum emitter.

Materials

Why these are connected

Investigating the fast spectral diffusion of a quantum emitter in hBN using resonant excitation and photon correlations

Samples

Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrate and irradiated with an electron beam to generate a B-center quantum emitter.

Materials

Why these are connected

Investigating the fast spectral diffusion of a quantum emitter in hBN using resonant excitation and photon correlations

Samples

Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrate and irradiated with an electron beam to generate a B-center quantum emitter.

Materials

Why these are connected

Investigating the fast spectral diffusion of a quantum emitter in hBN using resonant excitation and photon correlations

Samples

Single-crystal hBN exfoliated onto a 285 nm SiO₂/Si substrate and irradiated with an electron beam to generate a B-center quantum emitter.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties