Cathodoluminescence monitoring of quantum emitter activation in hexagonal boron nitride

Sébastien Roux; Clarisse Fournier; Kenji Watanabe; Takashi Taniguchi; Jean-Pierre Hermier; Julien Barjon; Aymeric Delteil

doi:10.1063/5.0126357

Paper details

Research paper

Experimental Characterization

Cathodoluminescence monitoring of quantum emitter activation in hexagonal boron nitride

Sébastien Roux, Clarisse Fournier, Kenji Watanabe, Takashi Taniguchi et al.

arXiv preprint·2022·10.1063/5.0126357·arXiv:2210.05028

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Exfoliated hBN flake grown by high-pressure high-temperature technique on a SiO₂/Si substrate; irradiated by an electron beam in selected zones.

1 preparation5 characterizations10 properties4 figures

ExperimentalhBNStudied Material

Same hBN flake region prior to irradiation, used as the pre-activation reference for CL/PL comparison.

No measurements recorded

ReferencehBNStudied Material

Materials

hexagonal boron nitride

hBN

Studied Material

Also known as

hBNhexagonal boron nitride

studied material

silicon dioxide

SiO₂

Substrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Cathodoluminescence monitoring of quantum emitter activation in hexagonal boron nitride | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	flake thickness	160nm	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
PL Peak	B-center ZPL	440nm	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
PL Peak	B-center ZPL	436nm	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Pl Peak Shift	optical phonon replica shift	160meV	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Raman Intensity Ratio	second-order correlation at zero delay	g(2)(0)=0.25±0.02	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Count Observed Emitters	estimated number of SPEs	528count	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Emitter Density	SPE density	3000000000000000cm⁻³	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Emitter Yield	electron dose per activated SPE	40000000000electrons/emitter	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Cl Saturation Surface Dose	CL saturation dose	100000000000000e·µm⁻²	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Cl Linear Regime Upper Surface Dose	upper bound of linear CL regime	10000000000000e·µm⁻²	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	flake thickness	160nm	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
PL Peak	B-center ZPL	440nm	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
PL Peak	B-center ZPL	436nm	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Pl Peak Shift	optical phonon replica shift	160meV	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Raman Intensity Ratio	second-order correlation at zero delay	g(2)(0)=0.25±0.02	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Count Observed Emitters	estimated number of SPEs	528count	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Emitter Density	SPE density	3000000000000000cm⁻³	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Emitter Yield	electron dose per activated SPE	40000000000electrons/emitter	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Cl Saturation Surface Dose	CL saturation dose	100000000000000e·µm⁻²	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Cl Linear Regime Upper Surface Dose	upper bound of linear CL regime	10000000000000e·µm⁻²	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	flake thickness	160nm	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
PL Peak	B-center ZPL	440nm	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
PL Peak	B-center ZPL	436nm	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Pl Peak Shift	optical phonon replica shift	160meV	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Raman Intensity Ratio	second-order correlation at zero delay	g(2)(0)=0.25±0.02	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Count Observed Emitters	estimated number of SPEs	528count	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Emitter Density	SPE density	3000000000000000cm⁻³	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Emitter Yield	electron dose per activated SPE	40000000000electrons/emitter	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Cl Saturation Surface Dose	CL saturation dose	100000000000000e·µm⁻²	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Cl Linear Regime Upper Surface Dose	upper bound of linear CL regime	10000000000000e·µm⁻²	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	flake thickness	160nm	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
PL Peak	B-center ZPL	440nm	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
PL Peak	B-center ZPL	436nm	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Pl Peak Shift	optical phonon replica shift	160meV	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Raman Intensity Ratio	second-order correlation at zero delay	g(2)(0)=0.25±0.02	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Count Observed Emitters	estimated number of SPEs	528count	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Emitter Density	SPE density	3000000000000000cm⁻³	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Emitter Yield	electron dose per activated SPE	40000000000electrons/emitter	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Cl Saturation Surface Dose	CL saturation dose	100000000000000e·µm⁻²	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—
Cl Linear Regime Upper Surface Dose	upper bound of linear CL regime	10000000000000e·µm⁻²	hBN	Exfoliated hBN flake grown by high-pressure high-temperature	—

Cathodoluminescence monitoring of quantum emitter activation in hexagonal boron nitride

Samples

Exfoliated hBN flake grown by high-pressure high-temperature technique on a SiO₂/Si substrate; irradiated by an electron beam in selected zones.

Same hBN flake region prior to irradiation, used as the pre-activation reference for CL/PL comparison.

Materials

Why these are connected

Cathodoluminescence monitoring of quantum emitter activation in hexagonal boron nitride

Samples

Exfoliated hBN flake grown by high-pressure high-temperature technique on a SiO₂/Si substrate; irradiated by an electron beam in selected zones.

Same hBN flake region prior to irradiation, used as the pre-activation reference for CL/PL comparison.

Materials

Why these are connected

Cathodoluminescence monitoring of quantum emitter activation in hexagonal boron nitride

Samples

Exfoliated hBN flake grown by high-pressure high-temperature technique on a SiO₂/Si substrate; irradiated by an electron beam in selected zones.

Same hBN flake region prior to irradiation, used as the pre-activation reference for CL/PL comparison.

Materials

Why these are connected

Cathodoluminescence monitoring of quantum emitter activation in hexagonal boron nitride

Samples

Exfoliated hBN flake grown by high-pressure high-temperature technique on a SiO₂/Si substrate; irradiated by an electron beam in selected zones.

Same hBN flake region prior to irradiation, used as the pre-activation reference for CL/PL comparison.

Materials

Why these are connected

Cathodoluminescence monitoring of quantum emitter activation in hexagonal boron nitride

Samples

Exfoliated hBN flake grown by high-pressure high-temperature technique on a SiO₂/Si substrate; irradiated by an electron beam in selected zones.

Same hBN flake region prior to irradiation, used as the pre-activation reference for CL/PL comparison.

Materials

Why these are connected

Cathodoluminescence monitoring of quantum emitter activation in hexagonal boron nitride

Samples

Exfoliated hBN flake grown by high-pressure high-temperature technique on a SiO₂/Si substrate; irradiated by an electron beam in selected zones.

Same hBN flake region prior to irradiation, used as the pre-activation reference for CL/PL comparison.

Materials

Why these are connected

Cathodoluminescence monitoring of quantum emitter activation in hexagonal boron nitride

Samples

Exfoliated hBN flake grown by high-pressure high-temperature technique on a SiO₂/Si substrate; irradiated by an electron beam in selected zones.

Same hBN flake region prior to irradiation, used as the pre-activation reference for CL/PL comparison.

Materials

Why these are connected

Cathodoluminescence monitoring of quantum emitter activation in hexagonal boron nitride

Samples

Exfoliated hBN flake grown by high-pressure high-temperature technique on a SiO₂/Si substrate; irradiated by an electron beam in selected zones.

Same hBN flake region prior to irradiation, used as the pre-activation reference for CL/PL comparison.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties