Stark Effect of Blue Quantum Emitters in Hexagonal Boron Nitride

Ivan Zhigulin; Jake Horder; Victor Ivady; Simon J. U. White; Angus Gale; Chi Li; Charlene J. Lobo; Milos Toth; Igor Aharonovich; Mehran Kianinia

doi:10.48550/arxiv.2208.00600

Paper details

Research paper

Experimental CharacterizationComputational DFTComputed Raman

Stark Effect of Blue Quantum Emitters in Hexagonal Boron Nitride

Ivan Zhigulin, Jake Horder, Victor Ivady, Simon J. U. White et al.

arXiv preprint·2022·10.48550/arxiv.2208.00600·arXiv:2208.00600

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Vertical device with an exfoliated hBN flake hosting blue emitters transferred onto silicon with 285 nm thermal oxide, with bottom Au/Cr electrodes, multilayer graphene top electrode, and an hBN capping layer.

4 preparations1 characterization2 properties1 figure

ExperimentalhBNStudied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricAuCapping Or ContactCrCapping Or ContactCCapping Or Contact

Lateral device with an hBN flake containing blue emitters placed over patterned gold electrodes on silicon with 285 nm thermal oxide, used to apply in-plane electric fields.

4 preparations1 characterization4 properties2 figures

ExperimentalhBNStudied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricAuCapping Or ContactCrCapping Or Contact

DFT candidate defect structure(s) in hBN used to identify the likely atomic origin of the blue emitters.

No measurements recorded

Simulated Supercell DfthBNStudied Material

Materials

hexagonal boron nitride

hBN

Studied Material

Also known as

hBN

studied material

silicon

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Stark Effect of Blue Quantum Emitters in Hexagonal Boron Nitride | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	436nm	hBN	Vertical device with an exfoliated hBN flake hosting blue em	—
Pl Peak Fwhm	ZPL linewidth	1.9GHz	hBN	Vertical device with an exfoliated hBN flake hosting blue em	—
PL Peak	ZPL shift response	quadratic Stark shift	hBN	Lateral device with an hBN flake containing blue emitters pl	—
PL Peak	linear Stark shift gradient	0.01GHz/MVm⁻¹	hBN	Lateral device with an hBN flake containing blue emitters pl	—
PL Peak	Stark shift dependence	quadratic	hBN	Lateral device with an hBN flake containing blue emitters pl	—
Fet Threshold Voltage	emission polarization angle relative to electric field direction	18deg	hBN	Lateral device with an hBN flake containing blue emitters pl	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	436nm	hBN	Vertical device with an exfoliated hBN flake hosting blue em	—
Pl Peak Fwhm	ZPL linewidth	1.9GHz	hBN	Vertical device with an exfoliated hBN flake hosting blue em	—
PL Peak	ZPL shift response	quadratic Stark shift	hBN	Lateral device with an hBN flake containing blue emitters pl	—
PL Peak	linear Stark shift gradient	0.01GHz/MVm⁻¹	hBN	Lateral device with an hBN flake containing blue emitters pl	—
PL Peak	Stark shift dependence	quadratic	hBN	Lateral device with an hBN flake containing blue emitters pl	—
Fet Threshold Voltage	emission polarization angle relative to electric field direction	18deg	hBN	Lateral device with an hBN flake containing blue emitters pl	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	436nm	hBN	Vertical device with an exfoliated hBN flake hosting blue em	—
Pl Peak Fwhm	ZPL linewidth	1.9GHz	hBN	Vertical device with an exfoliated hBN flake hosting blue em	—
PL Peak	ZPL shift response	quadratic Stark shift	hBN	Lateral device with an hBN flake containing blue emitters pl	—
PL Peak	linear Stark shift gradient	0.01GHz/MVm⁻¹	hBN	Lateral device with an hBN flake containing blue emitters pl	—
PL Peak	Stark shift dependence	quadratic	hBN	Lateral device with an hBN flake containing blue emitters pl	—
Fet Threshold Voltage	emission polarization angle relative to electric field direction	18deg	hBN	Lateral device with an hBN flake containing blue emitters pl	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	436nm	hBN	Vertical device with an exfoliated hBN flake hosting blue em	—
Pl Peak Fwhm	ZPL linewidth	1.9GHz	hBN	Vertical device with an exfoliated hBN flake hosting blue em	—
PL Peak	ZPL shift response	quadratic Stark shift	hBN	Lateral device with an hBN flake containing blue emitters pl	—
PL Peak	linear Stark shift gradient	0.01GHz/MVm⁻¹	hBN	Lateral device with an hBN flake containing blue emitters pl	—
PL Peak	Stark shift dependence	quadratic	hBN	Lateral device with an hBN flake containing blue emitters pl	—
Fet Threshold Voltage	emission polarization angle relative to electric field direction	18deg	hBN	Lateral device with an hBN flake containing blue emitters pl	—

Stark Effect of Blue Quantum Emitters in Hexagonal Boron Nitride

Samples

Vertical device with an exfoliated hBN flake hosting blue emitters transferred onto silicon with 285 nm thermal oxide, with bottom Au/Cr electrodes, multilayer graphene top electrode, and an hBN capping layer.

Lateral device with an hBN flake containing blue emitters placed over patterned gold electrodes on silicon with 285 nm thermal oxide, used to apply in-plane electric fields.

DFT candidate defect structure(s) in hBN used to identify the likely atomic origin of the blue emitters.

Materials

Why these are connected

Stark Effect of Blue Quantum Emitters in Hexagonal Boron Nitride

Samples

Vertical device with an exfoliated hBN flake hosting blue emitters transferred onto silicon with 285 nm thermal oxide, with bottom Au/Cr electrodes, multilayer graphene top electrode, and an hBN capping layer.

Lateral device with an hBN flake containing blue emitters placed over patterned gold electrodes on silicon with 285 nm thermal oxide, used to apply in-plane electric fields.

DFT candidate defect structure(s) in hBN used to identify the likely atomic origin of the blue emitters.

Materials

Why these are connected

Stark Effect of Blue Quantum Emitters in Hexagonal Boron Nitride

Samples

Vertical device with an exfoliated hBN flake hosting blue emitters transferred onto silicon with 285 nm thermal oxide, with bottom Au/Cr electrodes, multilayer graphene top electrode, and an hBN capping layer.

Lateral device with an hBN flake containing blue emitters placed over patterned gold electrodes on silicon with 285 nm thermal oxide, used to apply in-plane electric fields.

DFT candidate defect structure(s) in hBN used to identify the likely atomic origin of the blue emitters.

Materials

Why these are connected

Stark Effect of Blue Quantum Emitters in Hexagonal Boron Nitride

Samples

Vertical device with an exfoliated hBN flake hosting blue emitters transferred onto silicon with 285 nm thermal oxide, with bottom Au/Cr electrodes, multilayer graphene top electrode, and an hBN capping layer.

Lateral device with an hBN flake containing blue emitters placed over patterned gold electrodes on silicon with 285 nm thermal oxide, used to apply in-plane electric fields.

DFT candidate defect structure(s) in hBN used to identify the likely atomic origin of the blue emitters.

Materials

Why these are connected

Stark Effect of Blue Quantum Emitters in Hexagonal Boron Nitride

Samples

Vertical device with an exfoliated hBN flake hosting blue emitters transferred onto silicon with 285 nm thermal oxide, with bottom Au/Cr electrodes, multilayer graphene top electrode, and an hBN capping layer.

Lateral device with an hBN flake containing blue emitters placed over patterned gold electrodes on silicon with 285 nm thermal oxide, used to apply in-plane electric fields.

DFT candidate defect structure(s) in hBN used to identify the likely atomic origin of the blue emitters.

Materials

Why these are connected

Stark Effect of Blue Quantum Emitters in Hexagonal Boron Nitride

Samples

Vertical device with an exfoliated hBN flake hosting blue emitters transferred onto silicon with 285 nm thermal oxide, with bottom Au/Cr electrodes, multilayer graphene top electrode, and an hBN capping layer.

Lateral device with an hBN flake containing blue emitters placed over patterned gold electrodes on silicon with 285 nm thermal oxide, used to apply in-plane electric fields.

DFT candidate defect structure(s) in hBN used to identify the likely atomic origin of the blue emitters.

Materials

Why these are connected

Stark Effect of Blue Quantum Emitters in Hexagonal Boron Nitride

Samples

Vertical device with an exfoliated hBN flake hosting blue emitters transferred onto silicon with 285 nm thermal oxide, with bottom Au/Cr electrodes, multilayer graphene top electrode, and an hBN capping layer.

Lateral device with an hBN flake containing blue emitters placed over patterned gold electrodes on silicon with 285 nm thermal oxide, used to apply in-plane electric fields.

DFT candidate defect structure(s) in hBN used to identify the likely atomic origin of the blue emitters.

Materials

Why these are connected

Stark Effect of Blue Quantum Emitters in Hexagonal Boron Nitride

Samples

Vertical device with an exfoliated hBN flake hosting blue emitters transferred onto silicon with 285 nm thermal oxide, with bottom Au/Cr electrodes, multilayer graphene top electrode, and an hBN capping layer.

Lateral device with an hBN flake containing blue emitters placed over patterned gold electrodes on silicon with 285 nm thermal oxide, used to apply in-plane electric fields.

DFT candidate defect structure(s) in hBN used to identify the likely atomic origin of the blue emitters.

Materials

Why these are connected

Processing

Characterization

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Simulations

Processing

Characterization

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Simulations

Processing

Characterization

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Simulations

Processing

Characterization

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Simulations