Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays

Xiao-Dong Zeng; Yuan-Ze Yang; Nai-Jie Guo; Zhi-Peng Li; Zhao-An Wang; Lin-Ke Xie; Shang Yu; Yu Meng; Qiang Li; Jin-Shi Xu; Wei Liu; Yi-Tao Wang; Jian-Shun Tang; Chuan-Feng Li; Guang-Can Guo

doi:10.48550/arXiv.2207.00714

Paper details

Research paper

Experimental CharacterizationComputational Multiscale

Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays

Xiao-Dong Zeng, Yuan-Ze Yang, Nai-Jie Guo, Zhi-Peng Li et al.

arXiv·2022·10.48550/arXiv.2207.00714·arXiv:2209.00256

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

hBN flake transferred onto bare SiO₂/Si substrate and implanted with He ions to create V_B- defect arrays.

2 preparations1 characterization2 figures

ExperimentalhBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

hBN flake transferred onto reflective dielectric cavity with 0-nm dielectric spacer (Al reflector / Al₂O₃ / SiO₂ isolation / SiO₂/Si).

1 preparation3 characterizations1 property2 figures

ExperimentalhBNStudied MaterialAlCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / Dielectric

hBN flake transferred onto reflective dielectric cavity with 50-nm SiO₂ dielectric spacer and implanted with He ions to create V_B- defect arrays.

2 preparations3 characterizations3 properties2 figures

ExperimentalhBNStudied MaterialAlCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / Dielectric

Materials

hexagonal boron nitride

hBN

Studied Material

Also known as

hBN

studied material

silicon dioxide

SiO₂

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Pl Peak Intensity	PL enhancement	~7-fold enhancement	hBN	hBN flake transferred onto reflective dielectric cavity with		—
Pl Peak Intensity	V_B- spectral peak intensity	~10 times higher	hBN	hBN flake transferred onto reflective dielectric cavity with		—
Fet On Off Ratio	ODMR contrast	18%	hBN	hBN flake transferred onto reflective dielectric cavity with		—
Pl Peak Fwhm	fluorescence lifetime	0.825ns	hBN	hBN flake transferred onto reflective dielectric cavity with		—
PL Peak	regex-detected PL peak	773nm	hBN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Pl Peak Intensity	PL enhancement	~7-fold enhancement	hBN	hBN flake transferred onto reflective dielectric cavity with		—
Pl Peak Intensity	V_B- spectral peak intensity	~10 times higher	hBN	hBN flake transferred onto reflective dielectric cavity with		—
Fet On Off Ratio	ODMR contrast	18%	hBN	hBN flake transferred onto reflective dielectric cavity with		—
Pl Peak Fwhm	fluorescence lifetime	0.825ns	hBN	hBN flake transferred onto reflective dielectric cavity with		—
PL Peak	regex-detected PL peak	773nm	hBN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Pl Peak Intensity	PL enhancement	~7-fold enhancement	hBN	hBN flake transferred onto reflective dielectric cavity with		—
Pl Peak Intensity	V_B- spectral peak intensity	~10 times higher	hBN	hBN flake transferred onto reflective dielectric cavity with		—
Fet On Off Ratio	ODMR contrast	18%	hBN	hBN flake transferred onto reflective dielectric cavity with		—
Pl Peak Fwhm	fluorescence lifetime	0.825ns	hBN	hBN flake transferred onto reflective dielectric cavity with		—
PL Peak	regex-detected PL peak	773nm	hBN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Pl Peak Intensity	PL enhancement	~7-fold enhancement	hBN	hBN flake transferred onto reflective dielectric cavity with		—
Pl Peak Intensity	V_B- spectral peak intensity	~10 times higher	hBN	hBN flake transferred onto reflective dielectric cavity with		—
Fet On Off Ratio	ODMR contrast	18%	hBN	hBN flake transferred onto reflective dielectric cavity with		—
Pl Peak Fwhm	fluorescence lifetime	0.825ns	hBN	hBN flake transferred onto reflective dielectric cavity with		—
PL Peak	regex-detected PL peak	773nm	hBN	—	—	—

Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays

Samples

hBN flake transferred onto bare SiO₂/Si substrate and implanted with He ions to create VB- defect arrays.

hBN flake transferred onto reflective dielectric cavity with 0-nm dielectric spacer (Al reflector / Al₂O₃ / SiO₂ isolation / SiO₂/Si).

hBN flake transferred onto reflective dielectric cavity with 50-nm SiO₂ dielectric spacer and implanted with He ions to create VB- defect arrays.

Materials

Why these are connected

Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays

Samples

hBN flake transferred onto bare SiO₂/Si substrate and implanted with He ions to create VB- defect arrays.

hBN flake transferred onto reflective dielectric cavity with 0-nm dielectric spacer (Al reflector / Al₂O₃ / SiO₂ isolation / SiO₂/Si).

hBN flake transferred onto reflective dielectric cavity with 50-nm SiO₂ dielectric spacer and implanted with He ions to create VB- defect arrays.

Materials

Why these are connected

Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays

Samples

hBN flake transferred onto bare SiO₂/Si substrate and implanted with He ions to create VB- defect arrays.

hBN flake transferred onto reflective dielectric cavity with 0-nm dielectric spacer (Al reflector / Al₂O₃ / SiO₂ isolation / SiO₂/Si).

hBN flake transferred onto reflective dielectric cavity with 50-nm SiO₂ dielectric spacer and implanted with He ions to create VB- defect arrays.

Materials

Why these are connected

Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays

Samples

hBN flake transferred onto bare SiO₂/Si substrate and implanted with He ions to create VB- defect arrays.

hBN flake transferred onto reflective dielectric cavity with 0-nm dielectric spacer (Al reflector / Al₂O₃ / SiO₂ isolation / SiO₂/Si).

hBN flake transferred onto reflective dielectric cavity with 50-nm SiO₂ dielectric spacer and implanted with He ions to create VB- defect arrays.

Materials

Why these are connected

Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays

Samples

hBN flake transferred onto bare SiO₂/Si substrate and implanted with He ions to create VB- defect arrays.

hBN flake transferred onto reflective dielectric cavity with 0-nm dielectric spacer (Al reflector / Al₂O₃ / SiO₂ isolation / SiO₂/Si).

hBN flake transferred onto reflective dielectric cavity with 50-nm SiO₂ dielectric spacer and implanted with He ions to create VB- defect arrays.

Materials

Why these are connected

Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays

Samples

hBN flake transferred onto bare SiO₂/Si substrate and implanted with He ions to create VB- defect arrays.

hBN flake transferred onto reflective dielectric cavity with 0-nm dielectric spacer (Al reflector / Al₂O₃ / SiO₂ isolation / SiO₂/Si).

hBN flake transferred onto reflective dielectric cavity with 50-nm SiO₂ dielectric spacer and implanted with He ions to create VB- defect arrays.

Materials

Why these are connected

Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays

Samples

hBN flake transferred onto bare SiO₂/Si substrate and implanted with He ions to create VB- defect arrays.

hBN flake transferred onto reflective dielectric cavity with 0-nm dielectric spacer (Al reflector / Al₂O₃ / SiO₂ isolation / SiO₂/Si).

hBN flake transferred onto reflective dielectric cavity with 50-nm SiO₂ dielectric spacer and implanted with He ions to create VB- defect arrays.

Materials

Why these are connected

Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays

Samples

hBN flake transferred onto bare SiO₂/Si substrate and implanted with He ions to create VB- defect arrays.

hBN flake transferred onto reflective dielectric cavity with 0-nm dielectric spacer (Al reflector / Al₂O₃ / SiO₂ isolation / SiO₂/Si).

hBN flake transferred onto reflective dielectric cavity with 50-nm SiO₂ dielectric spacer and implanted with He ions to create VB- defect arrays.

Materials

Why these are connected

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

hBN flake transferred onto bare SiO₂/Si substrate and implanted with He ions to create V_B- defect arrays.

hBN flake transferred onto reflective dielectric cavity with 50-nm SiO₂ dielectric spacer and implanted with He ions to create V_B- defect arrays.

hBN flake transferred onto bare SiO₂/Si substrate and implanted with He ions to create V_B- defect arrays.

hBN flake transferred onto reflective dielectric cavity with 50-nm SiO₂ dielectric spacer and implanted with He ions to create V_B- defect arrays.

hBN flake transferred onto bare SiO₂/Si substrate and implanted with He ions to create V_B- defect arrays.

hBN flake transferred onto reflective dielectric cavity with 50-nm SiO₂ dielectric spacer and implanted with He ions to create V_B- defect arrays.

hBN flake transferred onto bare SiO₂/Si substrate and implanted with He ions to create V_B- defect arrays.

hBN flake transferred onto reflective dielectric cavity with 50-nm SiO₂ dielectric spacer and implanted with He ions to create V_B- defect arrays.

hBN flake transferred onto bare SiO₂/Si substrate and implanted with He ions to create V_B- defect arrays.

hBN flake transferred onto reflective dielectric cavity with 50-nm SiO₂ dielectric spacer and implanted with He ions to create V_B- defect arrays.

hBN flake transferred onto bare SiO₂/Si substrate and implanted with He ions to create V_B- defect arrays.

hBN flake transferred onto reflective dielectric cavity with 50-nm SiO₂ dielectric spacer and implanted with He ions to create V_B- defect arrays.

hBN flake transferred onto bare SiO₂/Si substrate and implanted with He ions to create V_B- defect arrays.

hBN flake transferred onto reflective dielectric cavity with 50-nm SiO₂ dielectric spacer and implanted with He ions to create V_B- defect arrays.

hBN flake transferred onto bare SiO₂/Si substrate and implanted with He ions to create V_B- defect arrays.

hBN flake transferred onto reflective dielectric cavity with 50-nm SiO₂ dielectric spacer and implanted with He ions to create V_B- defect arrays.