Research paperExperimental CharacterizationFree-Space Quantum Key Distribution with Single Photons from Defects in Hexagonal Boron NitrideÇağlar Samaner, Serkan Paçal, Görkem Mutlu, Kıvanç Uyanık et al.2022·10.1088/2040-8986/abccff·arXiv:2204.02830AbstractWe present a proof-of-concept demonstration of free space quantum key distribution (QKD) with single photons generated from an isolated defect in hexagonal boron nitride (hBN). The source, operating at room temperature with a 10% brightness, is integrated into a 92 protocol and a secure key rate (SKR) of 238 bps and a quantum bit error rate (QBER) of 8.95% are achieved with 1 MHz clock rate. The effect of temporal filtering of detected photons on the performance of QKD parameters is also studied.Read more
Multilayer hBN structure drop-casted onto SiO₂/Si substrate; all reported optical and QKD data are from a single isolated defect in the hBN flake.2 characterizations11 properties2 figuresExperimentalhBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationFree-Space Quantum Key Distribution with Single Photons from Defects in Hexagonal Boron NitrideÇağlar Samaner, Serkan Paçal, Görkem Mutlu, Kıvanç Uyanık et al.2022·10.1088/2040-8986/abccff·arXiv:2204.02830AbstractWe present a proof-of-concept demonstration of free space quantum key distribution (QKD) with single photons generated from an isolated defect in hexagonal boron nitride (hBN). The source, operating at room temperature with a 10% brightness, is integrated into a 92 protocol and a secure key rate (SKR) of 238 bps and a quantum bit error rate (QBER) of 8.95% are achieved with 1 MHz clock rate. The effect of temporal filtering of detected photons on the performance of QKD parameters is also studied.Read more
Multilayer hBN structure drop-casted onto SiO₂/Si substrate; all reported optical and QKD data are from a single isolated defect in the hBN flake.2 characterizations11 properties2 figuresExperimentalhBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationFree-Space Quantum Key Distribution with Single Photons from Defects in Hexagonal Boron NitrideÇağlar Samaner, Serkan Paçal, Görkem Mutlu, Kıvanç Uyanık et al.2022·10.1088/2040-8986/abccff·arXiv:2204.02830AbstractWe present a proof-of-concept demonstration of free space quantum key distribution (QKD) with single photons generated from an isolated defect in hexagonal boron nitride (hBN). The source, operating at room temperature with a 10% brightness, is integrated into a 92 protocol and a secure key rate (SKR) of 238 bps and a quantum bit error rate (QBER) of 8.95% are achieved with 1 MHz clock rate. The effect of temporal filtering of detected photons on the performance of QKD parameters is also studied.Read more
Multilayer hBN structure drop-casted onto SiO₂/Si substrate; all reported optical and QKD data are from a single isolated defect in the hBN flake.2 characterizations11 properties2 figuresExperimentalhBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationFree-Space Quantum Key Distribution with Single Photons from Defects in Hexagonal Boron NitrideÇağlar Samaner, Serkan Paçal, Görkem Mutlu, Kıvanç Uyanık et al.2022·10.1088/2040-8986/abccff·arXiv:2204.02830AbstractWe present a proof-of-concept demonstration of free space quantum key distribution (QKD) with single photons generated from an isolated defect in hexagonal boron nitride (hBN). The source, operating at room temperature with a 10% brightness, is integrated into a 92 protocol and a secure key rate (SKR) of 238 bps and a quantum bit error rate (QBER) of 8.95% are achieved with 1 MHz clock rate. The effect of temporal filtering of detected photons on the performance of QKD parameters is also studied.Read more
Multilayer hBN structure drop-casted onto SiO₂/Si substrate; all reported optical and QKD data are from a single isolated defect in the hBN flake.2 characterizations11 properties2 figuresExperimentalhBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand