Coupling spin defects in hexagonal boron nitride to a microwave cavity

Thinh N. Tran; Angus Gale; Benjamin Whitefield; Milos Toth; Igor Aharonovich; Mehran Kianinia

doi:10.1063/5.0156551

Paper details

Research paper

Experimental CharacterizationExperimental GrowthComputational Multiphysics

Coupling spin defects in hexagonal boron nitride to a microwave cavity

Thinh N. Tran, Angus Gale, Benjamin Whitefield, Milos Toth et al.

2025·10.1063/5.0156551·arXiv:2301.07304

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

hBN flake exfoliated onto a clean silicon substrate with thermal oxide and implanted with nitrogen ions to create VB− defects.

2 preparations2 characterizations2 properties1 figure

ExperimentalhBNStudied Material

The implanted hBN flake transferred onto a microwave double-arc resonator fabricated on a Rogers 4350B PCB with copper traces.

1 preparation1 characterization19 properties1 figure

ExperimentalhBNStudied MaterialRogers 4350BSubstrate / DielectricCuCapping Or Contact

Materials

hexagonal boron nitride

hBN

Studied Material

Also known as

hBN

studied material

silicon

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Coupling spin defects in hexagonal boron nitride to a microwave cavity | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	VB− emission	800nm	hBN	hBN flake exfoliated onto a clean silicon substrate with the	—
Xrd Space Group	crystal phase	hBN	hBN	hBN flake exfoliated onto a clean silicon substrate with the	—
Odmr Peak	zero-field splitting	3.48GHz	hBN	The implanted hBN flake transferred onto a microwave double-	—
Odmr Contrast	cavity-enhanced ODMR contrast	7%	hBN	The implanted hBN flake transferred onto a microwave double-	—
Odmr Contrast	pristine ODMR contrast	1.7%	hBN	The implanted hBN flake transferred onto a microwave double-	—
Odmr Linewidth	ODMR linewidth	104MHz	hBN	The implanted hBN flake transferred onto a microwave double-	—
Odmr Linewidth Reduction	linewidth reduction	20%	hBN	The implanted hBN flake transferred onto a microwave double-	—
Magnetic Field Sensitivity	best sensitivity	42.4uT/√Hz	hBN	The implanted hBN flake transferred onto a microwave double-	—
Magnetic Field Sensitivity	reported lower-bound sensitivity	42.2uT/√Hz	hBN	The implanted hBN flake transferred onto a microwave double-	—
Resonator Frequency	design resonance frequency	3.78GHz	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Resonator Q Factor	measured Q factor	65	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Resonator Q Factor	design Q factor	90	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Resonator Frequency Slope	frequency vs inner radius slope	-0.63GHz/mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Copper Layer Thickness	tCu	89um	Cu	The implanted hBN flake transferred onto a microwave double-	—
Dielectric Constant	relative permittivity	3.48	Rogers 4350B	The implanted hBN flake transferred onto a microwave double-	—
Inner Arc Radius	r1	2.79mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Outer Arc Radius	r2	4.55mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Coupling Gap	gt	101um	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Cut Width	g1	5.13mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Cut Width	g2	9.1mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Trace Width	w	1.6mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	VB− emission	800nm	hBN	hBN flake exfoliated onto a clean silicon substrate with the	—
Xrd Space Group	crystal phase	hBN	hBN	hBN flake exfoliated onto a clean silicon substrate with the	—
Odmr Peak	zero-field splitting	3.48GHz	hBN	The implanted hBN flake transferred onto a microwave double-	—
Odmr Contrast	cavity-enhanced ODMR contrast	7%	hBN	The implanted hBN flake transferred onto a microwave double-	—
Odmr Contrast	pristine ODMR contrast	1.7%	hBN	The implanted hBN flake transferred onto a microwave double-	—
Odmr Linewidth	ODMR linewidth	104MHz	hBN	The implanted hBN flake transferred onto a microwave double-	—
Odmr Linewidth Reduction	linewidth reduction	20%	hBN	The implanted hBN flake transferred onto a microwave double-	—
Magnetic Field Sensitivity	best sensitivity	42.4uT/√Hz	hBN	The implanted hBN flake transferred onto a microwave double-	—
Magnetic Field Sensitivity	reported lower-bound sensitivity	42.2uT/√Hz	hBN	The implanted hBN flake transferred onto a microwave double-	—
Resonator Frequency	design resonance frequency	3.78GHz	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Resonator Q Factor	measured Q factor	65	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Resonator Q Factor	design Q factor	90	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Resonator Frequency Slope	frequency vs inner radius slope	-0.63GHz/mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Copper Layer Thickness	tCu	89um	Cu	The implanted hBN flake transferred onto a microwave double-	—
Dielectric Constant	relative permittivity	3.48	Rogers 4350B	The implanted hBN flake transferred onto a microwave double-	—
Inner Arc Radius	r1	2.79mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Outer Arc Radius	r2	4.55mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Coupling Gap	gt	101um	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Cut Width	g1	5.13mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Cut Width	g2	9.1mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Trace Width	w	1.6mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	VB− emission	800nm	hBN	hBN flake exfoliated onto a clean silicon substrate with the	—
Xrd Space Group	crystal phase	hBN	hBN	hBN flake exfoliated onto a clean silicon substrate with the	—
Odmr Peak	zero-field splitting	3.48GHz	hBN	The implanted hBN flake transferred onto a microwave double-	—
Odmr Contrast	cavity-enhanced ODMR contrast	7%	hBN	The implanted hBN flake transferred onto a microwave double-	—
Odmr Contrast	pristine ODMR contrast	1.7%	hBN	The implanted hBN flake transferred onto a microwave double-	—
Odmr Linewidth	ODMR linewidth	104MHz	hBN	The implanted hBN flake transferred onto a microwave double-	—
Odmr Linewidth Reduction	linewidth reduction	20%	hBN	The implanted hBN flake transferred onto a microwave double-	—
Magnetic Field Sensitivity	best sensitivity	42.4uT/√Hz	hBN	The implanted hBN flake transferred onto a microwave double-	—
Magnetic Field Sensitivity	reported lower-bound sensitivity	42.2uT/√Hz	hBN	The implanted hBN flake transferred onto a microwave double-	—
Resonator Frequency	design resonance frequency	3.78GHz	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Resonator Q Factor	measured Q factor	65	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Resonator Q Factor	design Q factor	90	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Resonator Frequency Slope	frequency vs inner radius slope	-0.63GHz/mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Copper Layer Thickness	tCu	89um	Cu	The implanted hBN flake transferred onto a microwave double-	—
Dielectric Constant	relative permittivity	3.48	Rogers 4350B	The implanted hBN flake transferred onto a microwave double-	—
Inner Arc Radius	r1	2.79mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Outer Arc Radius	r2	4.55mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Coupling Gap	gt	101um	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Cut Width	g1	5.13mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Cut Width	g2	9.1mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Trace Width	w	1.6mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	VB− emission	800nm	hBN	hBN flake exfoliated onto a clean silicon substrate with the	—
Xrd Space Group	crystal phase	hBN	hBN	hBN flake exfoliated onto a clean silicon substrate with the	—
Odmr Peak	zero-field splitting	3.48GHz	hBN	The implanted hBN flake transferred onto a microwave double-	—
Odmr Contrast	cavity-enhanced ODMR contrast	7%	hBN	The implanted hBN flake transferred onto a microwave double-	—
Odmr Contrast	pristine ODMR contrast	1.7%	hBN	The implanted hBN flake transferred onto a microwave double-	—
Odmr Linewidth	ODMR linewidth	104MHz	hBN	The implanted hBN flake transferred onto a microwave double-	—
Odmr Linewidth Reduction	linewidth reduction	20%	hBN	The implanted hBN flake transferred onto a microwave double-	—
Magnetic Field Sensitivity	best sensitivity	42.4uT/√Hz	hBN	The implanted hBN flake transferred onto a microwave double-	—
Magnetic Field Sensitivity	reported lower-bound sensitivity	42.2uT/√Hz	hBN	The implanted hBN flake transferred onto a microwave double-	—
Resonator Frequency	design resonance frequency	3.78GHz	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Resonator Q Factor	measured Q factor	65	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Resonator Q Factor	design Q factor	90	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Resonator Frequency Slope	frequency vs inner radius slope	-0.63GHz/mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Copper Layer Thickness	tCu	89um	Cu	The implanted hBN flake transferred onto a microwave double-	—
Dielectric Constant	relative permittivity	3.48	Rogers 4350B	The implanted hBN flake transferred onto a microwave double-	—
Inner Arc Radius	r1	2.79mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Outer Arc Radius	r2	4.55mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Coupling Gap	gt	101um	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Cut Width	g1	5.13mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Cut Width	g2	9.1mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—
Trace Width	w	1.6mm	Rogers 4350B Cu	The implanted hBN flake transferred onto a microwave double-	—

Coupling spin defects in hexagonal boron nitride to a microwave cavity

Samples

hBN flake exfoliated onto a clean silicon substrate with thermal oxide and implanted with nitrogen ions to create VB− defects.

The implanted hBN flake transferred onto a microwave double-arc resonator fabricated on a Rogers 4350B PCB with copper traces.

Materials

Why these are connected

Coupling spin defects in hexagonal boron nitride to a microwave cavity

Samples

hBN flake exfoliated onto a clean silicon substrate with thermal oxide and implanted with nitrogen ions to create VB− defects.

The implanted hBN flake transferred onto a microwave double-arc resonator fabricated on a Rogers 4350B PCB with copper traces.

Materials

Why these are connected

Coupling spin defects in hexagonal boron nitride to a microwave cavity

Samples

hBN flake exfoliated onto a clean silicon substrate with thermal oxide and implanted with nitrogen ions to create VB− defects.

The implanted hBN flake transferred onto a microwave double-arc resonator fabricated on a Rogers 4350B PCB with copper traces.

Materials

Why these are connected

Coupling spin defects in hexagonal boron nitride to a microwave cavity

Samples

hBN flake exfoliated onto a clean silicon substrate with thermal oxide and implanted with nitrogen ions to create VB− defects.

The implanted hBN flake transferred onto a microwave double-arc resonator fabricated on a Rogers 4350B PCB with copper traces.

Materials

Why these are connected

Coupling spin defects in hexagonal boron nitride to a microwave cavity

Samples

hBN flake exfoliated onto a clean silicon substrate with thermal oxide and implanted with nitrogen ions to create VB− defects.

The implanted hBN flake transferred onto a microwave double-arc resonator fabricated on a Rogers 4350B PCB with copper traces.

Materials

Why these are connected

Coupling spin defects in hexagonal boron nitride to a microwave cavity

Samples

hBN flake exfoliated onto a clean silicon substrate with thermal oxide and implanted with nitrogen ions to create VB− defects.

The implanted hBN flake transferred onto a microwave double-arc resonator fabricated on a Rogers 4350B PCB with copper traces.

Materials

Why these are connected

Coupling spin defects in hexagonal boron nitride to a microwave cavity

Samples

hBN flake exfoliated onto a clean silicon substrate with thermal oxide and implanted with nitrogen ions to create VB− defects.

The implanted hBN flake transferred onto a microwave double-arc resonator fabricated on a Rogers 4350B PCB with copper traces.

Materials

Why these are connected

Coupling spin defects in hexagonal boron nitride to a microwave cavity

Samples

hBN flake exfoliated onto a clean silicon substrate with thermal oxide and implanted with nitrogen ions to create VB− defects.

The implanted hBN flake transferred onto a microwave double-arc resonator fabricated on a Rogers 4350B PCB with copper traces.

Materials

Why these are connected

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations