Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations9 properties4 figures
1 characterization10 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | X₀ | 1.65eV | — | |||
| PL Peak | moiré exciton peaks | 1.68-1.8eV | — | |||
| PL Peak | main exciton | 1.637eV | — | |||
| PL Peak | main moire exciton | 1.671eV | — | |||
| PL Peak | Umklapp satellite peak | 1eV | — | |||
| Moiré Period | moire superlattice period | 8nm | — | |||
| Interlayer Distance | e-h bilayer separation | 2nm | — | |||
| Moiré Density | n0 | 1800000000000cm⁻² | — | |||
| Band Gap | type-II band gap | 1.5eV | — | |||
| Exciton Binding Energy | interlayer exciton binding energy | 20meV | — | |||
| Electric Field | antisymmetric gating field | 0.41V/nm | — | |||
| Interlayer Tunneling Resistance | tunneling resistance | 10^8-10^9ohm | — |
Related documents with shared materials, methods, properties, or citations.
Observation of two-component exciton condensates in an excitonic insulator
Charge Transfer Dynamics in MoSe2/hBN/WSe2 Heterostructures
Cryogenic Nano-Imaging of Excitons in a Monolayer Semiconductor
Twist-dependent intra- and interlayer excitons in moiré MoSe2 homobilayers
Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors
Coherent Interaction of 2s and 1s Exciton States in Transition-Metal Dichalcogenide Monolayers
Non-linear and negative effective diffusivity of optical excitations in moiré-free heterobilayers
Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon
Time-Domain Signatures of Distinct Correlated Insulators in a Moiré Superlattice
Photoinduced Metal-to-Insulator Transitions in 2D Moiré Devices
Two-Dimensional Moiré Polaronic Electron Crystals
Origin of trapped intralayer Wannier and charge-transfer excitons in moiré materials
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations9 properties4 figures
1 characterization10 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | X₀ | 1.65eV | — | |||
| PL Peak | moiré exciton peaks | 1.68-1.8eV | — | |||
| PL Peak | main exciton | 1.637eV | — | |||
| PL Peak | main moire exciton | 1.671eV | — | |||
| PL Peak | Umklapp satellite peak | 1eV | — | |||
| Moiré Period | moire superlattice period | 8nm | — | |||
| Interlayer Distance | e-h bilayer separation | 2nm | — | |||
| Moiré Density | n0 | 1800000000000cm⁻² | — | |||
| Band Gap | type-II band gap | 1.5eV | — | |||
| Exciton Binding Energy | interlayer exciton binding energy | 20meV | — | |||
| Electric Field | antisymmetric gating field | 0.41V/nm | — | |||
| Interlayer Tunneling Resistance | tunneling resistance | 10^8-10^9ohm | — |
Related documents with shared materials, methods, properties, or citations.
Observation of two-component exciton condensates in an excitonic insulator
Charge Transfer Dynamics in MoSe2/hBN/WSe2 Heterostructures
Cryogenic Nano-Imaging of Excitons in a Monolayer Semiconductor
Twist-dependent intra- and interlayer excitons in moiré MoSe2 homobilayers
Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors
Coherent Interaction of 2s and 1s Exciton States in Transition-Metal Dichalcogenide Monolayers
Non-linear and negative effective diffusivity of optical excitations in moiré-free heterobilayers
Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon
Time-Domain Signatures of Distinct Correlated Insulators in a Moiré Superlattice
Photoinduced Metal-to-Insulator Transitions in 2D Moiré Devices
Two-Dimensional Moiré Polaronic Electron Crystals
Origin of trapped intralayer Wannier and charge-transfer excitons in moiré materials
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations9 properties4 figures
1 characterization10 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | X₀ | 1.65eV | — | |||
| PL Peak | moiré exciton peaks | 1.68-1.8eV | — | |||
| PL Peak | main exciton | 1.637eV | — | |||
| PL Peak | main moire exciton | 1.671eV | — | |||
| PL Peak | Umklapp satellite peak | 1eV | — | |||
| Moiré Period | moire superlattice period | 8nm | — | |||
| Interlayer Distance | e-h bilayer separation | 2nm | — | |||
| Moiré Density | n0 | 1800000000000cm⁻² | — | |||
| Band Gap | type-II band gap | 1.5eV | — | |||
| Exciton Binding Energy | interlayer exciton binding energy | 20meV | — | |||
| Electric Field | antisymmetric gating field | 0.41V/nm | — | |||
| Interlayer Tunneling Resistance | tunneling resistance | 10^8-10^9ohm | — |
Related documents with shared materials, methods, properties, or citations.
Observation of two-component exciton condensates in an excitonic insulator
Charge Transfer Dynamics in MoSe2/hBN/WSe2 Heterostructures
Cryogenic Nano-Imaging of Excitons in a Monolayer Semiconductor
Twist-dependent intra- and interlayer excitons in moiré MoSe2 homobilayers
Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors
Coherent Interaction of 2s and 1s Exciton States in Transition-Metal Dichalcogenide Monolayers
Non-linear and negative effective diffusivity of optical excitations in moiré-free heterobilayers
Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon
Time-Domain Signatures of Distinct Correlated Insulators in a Moiré Superlattice
Photoinduced Metal-to-Insulator Transitions in 2D Moiré Devices
Two-Dimensional Moiré Polaronic Electron Crystals
Origin of trapped intralayer Wannier and charge-transfer excitons in moiré materials
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations9 properties4 figures
1 characterization10 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | X₀ | 1.65eV | — | |||
| PL Peak | moiré exciton peaks | 1.68-1.8eV | — | |||
| PL Peak | main exciton | 1.637eV | — | |||
| PL Peak | main moire exciton | 1.671eV | — | |||
| PL Peak | Umklapp satellite peak | 1eV | — | |||
| Moiré Period | moire superlattice period | 8nm | — | |||
| Interlayer Distance | e-h bilayer separation | 2nm | — | |||
| Moiré Density | n0 | 1800000000000cm⁻² | — | |||
| Band Gap | type-II band gap | 1.5eV | — | |||
| Exciton Binding Energy | interlayer exciton binding energy | 20meV | — | |||
| Electric Field | antisymmetric gating field | 0.41V/nm | — | |||
| Interlayer Tunneling Resistance | tunneling resistance | 10^8-10^9ohm | — |
Related documents with shared materials, methods, properties, or citations.
Observation of two-component exciton condensates in an excitonic insulator
Charge Transfer Dynamics in MoSe2/hBN/WSe2 Heterostructures
Cryogenic Nano-Imaging of Excitons in a Monolayer Semiconductor
Twist-dependent intra- and interlayer excitons in moiré MoSe2 homobilayers
Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors
Coherent Interaction of 2s and 1s Exciton States in Transition-Metal Dichalcogenide Monolayers
Non-linear and negative effective diffusivity of optical excitations in moiré-free heterobilayers
Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon
Time-Domain Signatures of Distinct Correlated Insulators in a Moiré Superlattice
Photoinduced Metal-to-Insulator Transitions in 2D Moiré Devices
Two-Dimensional Moiré Polaronic Electron Crystals
Origin of trapped intralayer Wannier and charge-transfer excitons in moiré materials