Copyright © 2026 Matter42. All rights reserved.

Twist-dependent intra- and interlayer excitons in moiré MoSe2 homobilayers | Matter42 Literature

Paper

Atlas literature

Research paper

Experimental CharacterizationTheoreticalComputed Band Structure

Twist-dependent intra- and interlayer excitons in moiré MoSe₂ homobilayers

Viviana Villafañe, Malte Kremser, Ruven Hübner, Marko M. Petrić et al.

arXiv preprint·2022·10.1103/PhysRevLett.130.026901·arXiv:2210.12076

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

hBN-encapsulated MoSe₂ homobilayer with twist angle near 0° (small-angle regime).

1 preparation3 characterizations10 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 8°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 20°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 30°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 40°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 54°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 60° (near-H-stacking regime).

1 preparation3 characterizations10 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

Monolayer MoSe₂ reference region on the same heterostructure stack used for detuning and normalization.

1 preparation3 characterizations2 figures

ReferenceMoSe₂Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper

Atlas literature

Research paper

Experimental CharacterizationTheoreticalComputed Band Structure

Twist-dependent intra- and interlayer excitons in moiré MoSe₂ homobilayers

Viviana Villafañe, Malte Kremser, Ruven Hübner, Marko M. Petrić et al.

arXiv preprint·2022·10.1103/PhysRevLett.130.026901·arXiv:2210.12076

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

hBN-encapsulated MoSe₂ homobilayer with twist angle near 0° (small-angle regime).

1 preparation3 characterizations10 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 8°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 20°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 30°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 40°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 54°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 60° (near-H-stacking regime).

1 preparation3 characterizations10 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

Monolayer MoSe₂ reference region on the same heterostructure stack used for detuning and normalization.

1 preparation3 characterizations2 figures

ReferenceMoSe₂Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper

Atlas literature

Research paper

Experimental CharacterizationTheoreticalComputed Band Structure

Twist-dependent intra- and interlayer excitons in moiré MoSe₂ homobilayers

Viviana Villafañe, Malte Kremser, Ruven Hübner, Marko M. Petrić et al.

arXiv preprint·2022·10.1103/PhysRevLett.130.026901·arXiv:2210.12076

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

hBN-encapsulated MoSe₂ homobilayer with twist angle near 0° (small-angle regime).

1 preparation3 characterizations10 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 8°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 20°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 30°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 40°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 54°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 60° (near-H-stacking regime).

1 preparation3 characterizations10 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

Monolayer MoSe₂ reference region on the same heterostructure stack used for detuning and normalization.

1 preparation3 characterizations2 figures

ReferenceMoSe₂Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper

Atlas literature

Research paper

Experimental CharacterizationTheoreticalComputed Band Structure

Twist-dependent intra- and interlayer excitons in moiré MoSe₂ homobilayers

Viviana Villafañe, Malte Kremser, Ruven Hübner, Marko M. Petrić et al.

arXiv preprint·2022·10.1103/PhysRevLett.130.026901·arXiv:2210.12076

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

hBN-encapsulated MoSe₂ homobilayer with twist angle near 0° (small-angle regime).

1 preparation3 characterizations10 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 8°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 20°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 30°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 40°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 54°.

1 preparation3 characterizations8 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

hBN-encapsulated MoSe₂ homobilayer with twist angle 60° (near-H-stacking regime).

1 preparation3 characterizations10 properties2 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / Dielectric

Monolayer MoSe₂ reference region on the same heterostructure stack used for detuning and normalization.

1 preparation3 characterizations2 figures

ReferenceMoSe₂Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.