Research paper
Experimental CharacterizationComputational MultiscaleTheoreticalEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation5 characterizations13 properties5 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | interlayer exciton peak | 1.4eV | — | |||
| Pl Peak Fwhm | interlayer exciton linewidth | 3meV | — | |||
| Fet On Off Ratio | g-factor (singlet IX) | 12 | — | |||
| Fet On Off Ratio | g-factor (triplet IX) | -16 | — | |||
| Absorption Peak | excitation photon energy | 2.33eV | — | |||
| PL Peak | MoSe₂ A-exciton | 1.63eV | — | |||
| Fet Mobility | linear diffusion coefficient D₀ | 1.1cm²/Vs | — | |||
| Fet Mobility | semi-classical diffusion coefficient | 0.98cm²/Vs | — | |||
| Fet Mobility | effective diffusion coefficient | 30cm²/Vs | — | |||
| Fet Mobility | effective diffusion coefficient | 35cm²/Vs | — | |||
| Fet Mobility | effective diffusion coefficient | -5cm²/Vs | — | |||
| Optical Band Gap | Mott threshold density | 2000000000000cm⁻² | — | |||
| Optical Band Gap | exciton binding energy | 130meV | — | |||
| Xrd Lattice Constant A | lattice constant a | 3.29Å | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Interlayer donor-acceptor pair excitons in MoSe2/WSe2 moiré heterobilayer
Optical properties of Fermi polarons in a GaInP/MoSe2 monolayer heterostructure
Localized Interlayer Excitons in MoSe2-WSe2 Heterostructures without a Moiré Potential
Hierarchical spectral inhomogeneity in photoluminescence of a twisted MoSe2/WSe2 heterobilayer moiré superlattice revealed by hyperspectral mapping
Twist-dependent intra- and interlayer excitons in moiré MoSe2 homobilayers
Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure
Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors
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Assessment of valley coherence in a high-quality monolayer molybdenum diselenide
Valley-hybridized gate-tunable 1D exciton confinement in MoSe2
Sub-nm range momentum-dependent exciton transfer from a 2D semiconductor to graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation5 characterizations13 properties5 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | interlayer exciton peak | 1.4eV | — | |||
| Pl Peak Fwhm | interlayer exciton linewidth | 3meV | — | |||
| Fet On Off Ratio | g-factor (singlet IX) | 12 | — | |||
| Fet On Off Ratio | g-factor (triplet IX) | -16 | — | |||
| Absorption Peak | excitation photon energy | 2.33eV | — | |||
| PL Peak | MoSe₂ A-exciton | 1.63eV | — | |||
| Fet Mobility | linear diffusion coefficient D₀ | 1.1cm²/Vs | — | |||
| Fet Mobility | semi-classical diffusion coefficient | 0.98cm²/Vs | — | |||
| Fet Mobility | effective diffusion coefficient | 30cm²/Vs | — | |||
| Fet Mobility | effective diffusion coefficient | 35cm²/Vs | — | |||
| Fet Mobility | effective diffusion coefficient | -5cm²/Vs | — | |||
| Optical Band Gap | Mott threshold density | 2000000000000cm⁻² | — | |||
| Optical Band Gap | exciton binding energy | 130meV | — | |||
| Xrd Lattice Constant A | lattice constant a | 3.29Å | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Interlayer donor-acceptor pair excitons in MoSe2/WSe2 moiré heterobilayer
Optical properties of Fermi polarons in a GaInP/MoSe2 monolayer heterostructure
Localized Interlayer Excitons in MoSe2-WSe2 Heterostructures without a Moiré Potential
Hierarchical spectral inhomogeneity in photoluminescence of a twisted MoSe2/WSe2 heterobilayer moiré superlattice revealed by hyperspectral mapping
Twist-dependent intra- and interlayer excitons in moiré MoSe2 homobilayers
Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure
Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors
Observation of an exciton crystal in a moiré excitonic insulator
Tunable Localized Charge Transfer Excitons in a Mixed Dimensional van der Waals Heterostructure
Assessment of valley coherence in a high-quality monolayer molybdenum diselenide
Valley-hybridized gate-tunable 1D exciton confinement in MoSe2
Sub-nm range momentum-dependent exciton transfer from a 2D semiconductor to graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation5 characterizations13 properties5 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | interlayer exciton peak | 1.4eV | — | |||
| Pl Peak Fwhm | interlayer exciton linewidth | 3meV | — | |||
| Fet On Off Ratio | g-factor (singlet IX) | 12 | — | |||
| Fet On Off Ratio | g-factor (triplet IX) | -16 | — | |||
| Absorption Peak | excitation photon energy | 2.33eV | — | |||
| PL Peak | MoSe₂ A-exciton | 1.63eV | — | |||
| Fet Mobility | linear diffusion coefficient D₀ | 1.1cm²/Vs | — | |||
| Fet Mobility | semi-classical diffusion coefficient | 0.98cm²/Vs | — | |||
| Fet Mobility | effective diffusion coefficient | 30cm²/Vs | — | |||
| Fet Mobility | effective diffusion coefficient | 35cm²/Vs | — | |||
| Fet Mobility | effective diffusion coefficient | -5cm²/Vs | — | |||
| Optical Band Gap | Mott threshold density | 2000000000000cm⁻² | — | |||
| Optical Band Gap | exciton binding energy | 130meV | — | |||
| Xrd Lattice Constant A | lattice constant a | 3.29Å | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Interlayer donor-acceptor pair excitons in MoSe2/WSe2 moiré heterobilayer
Optical properties of Fermi polarons in a GaInP/MoSe2 monolayer heterostructure
Localized Interlayer Excitons in MoSe2-WSe2 Heterostructures without a Moiré Potential
Hierarchical spectral inhomogeneity in photoluminescence of a twisted MoSe2/WSe2 heterobilayer moiré superlattice revealed by hyperspectral mapping
Twist-dependent intra- and interlayer excitons in moiré MoSe2 homobilayers
Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure
Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors
Observation of an exciton crystal in a moiré excitonic insulator
Tunable Localized Charge Transfer Excitons in a Mixed Dimensional van der Waals Heterostructure
Assessment of valley coherence in a high-quality monolayer molybdenum diselenide
Valley-hybridized gate-tunable 1D exciton confinement in MoSe2
Sub-nm range momentum-dependent exciton transfer from a 2D semiconductor to graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation5 characterizations13 properties5 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | interlayer exciton peak | 1.4eV | — | |||
| Pl Peak Fwhm | interlayer exciton linewidth | 3meV | — | |||
| Fet On Off Ratio | g-factor (singlet IX) | 12 | — | |||
| Fet On Off Ratio | g-factor (triplet IX) | -16 | — | |||
| Absorption Peak | excitation photon energy | 2.33eV | — | |||
| PL Peak | MoSe₂ A-exciton | 1.63eV | — | |||
| Fet Mobility | linear diffusion coefficient D₀ | 1.1cm²/Vs | — | |||
| Fet Mobility | semi-classical diffusion coefficient | 0.98cm²/Vs | — | |||
| Fet Mobility | effective diffusion coefficient | 30cm²/Vs | — | |||
| Fet Mobility | effective diffusion coefficient | 35cm²/Vs | — | |||
| Fet Mobility | effective diffusion coefficient | -5cm²/Vs | — | |||
| Optical Band Gap | Mott threshold density | 2000000000000cm⁻² | — | |||
| Optical Band Gap | exciton binding energy | 130meV | — | |||
| Xrd Lattice Constant A | lattice constant a | 3.29Å | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Interlayer donor-acceptor pair excitons in MoSe2/WSe2 moiré heterobilayer
Optical properties of Fermi polarons in a GaInP/MoSe2 monolayer heterostructure
Localized Interlayer Excitons in MoSe2-WSe2 Heterostructures without a Moiré Potential
Hierarchical spectral inhomogeneity in photoluminescence of a twisted MoSe2/WSe2 heterobilayer moiré superlattice revealed by hyperspectral mapping
Twist-dependent intra- and interlayer excitons in moiré MoSe2 homobilayers
Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure
Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors
Observation of an exciton crystal in a moiré excitonic insulator
Tunable Localized Charge Transfer Excitons in a Mixed Dimensional van der Waals Heterostructure
Assessment of valley coherence in a high-quality monolayer molybdenum diselenide
Valley-hybridized gate-tunable 1D exciton confinement in MoSe2
Sub-nm range momentum-dependent exciton transfer from a 2D semiconductor to graphene
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