Research paperExperimental CharacterizationObservation of two-component exciton condensates in an excitonic insulatorRuishi Qi, Qize Li, Jiahui Nie, Ruichen Xia et al.2025·10.1038/s41563-025-02334-3·arXiv:2603.15443AbstractEvidence of two-component exciton Bose-Einstein condensates in MoSe₂/hBN/WSe₂ electron-hole bilayers is reported by probing spin susceptibility with magneto-optical spectroscopy in a dilution refrigerator. The work identifies three exciton-condensate phases with distinct flavor polarizations and a temperature scale up to about 1.8 K.Read more
Dual-gated MoSe₂/hBN/WSe₂ electron-hole bilayer device D₁ with a 5-layer hBN spacer and near-60° alignment.2 characterizations4 properties5 figuresExperimentalMoSe₂Studied MaterialWSe₂Studied MaterialBNSubstrate / DielectricCCapping Or ContactExpand
Dual-gated MoSe₂/hBN/WSe₂ device D₃ fabricated with the same TMD flakes in two regions having relative twist angles of 60° and 30°.2 characterizations1 property5 figuresExperimentalMoSe₂Studied MaterialWSe₂Studied MaterialBNSubstrate / DielectricCCapping Or ContactExpand
Research paperExperimental CharacterizationObservation of two-component exciton condensates in an excitonic insulatorRuishi Qi, Qize Li, Jiahui Nie, Ruichen Xia et al.2025·10.1038/s41563-025-02334-3·arXiv:2603.15443AbstractEvidence of two-component exciton Bose-Einstein condensates in MoSe₂/hBN/WSe₂ electron-hole bilayers is reported by probing spin susceptibility with magneto-optical spectroscopy in a dilution refrigerator. The work identifies three exciton-condensate phases with distinct flavor polarizations and a temperature scale up to about 1.8 K.Read more
Dual-gated MoSe₂/hBN/WSe₂ electron-hole bilayer device D₁ with a 5-layer hBN spacer and near-60° alignment.2 characterizations4 properties5 figuresExperimentalMoSe₂Studied MaterialWSe₂Studied MaterialBNSubstrate / DielectricCCapping Or ContactExpand
Dual-gated MoSe₂/hBN/WSe₂ device D₃ fabricated with the same TMD flakes in two regions having relative twist angles of 60° and 30°.2 characterizations1 property5 figuresExperimentalMoSe₂Studied MaterialWSe₂Studied MaterialBNSubstrate / DielectricCCapping Or ContactExpand
Research paperExperimental CharacterizationObservation of two-component exciton condensates in an excitonic insulatorRuishi Qi, Qize Li, Jiahui Nie, Ruichen Xia et al.2025·10.1038/s41563-025-02334-3·arXiv:2603.15443AbstractEvidence of two-component exciton Bose-Einstein condensates in MoSe₂/hBN/WSe₂ electron-hole bilayers is reported by probing spin susceptibility with magneto-optical spectroscopy in a dilution refrigerator. The work identifies three exciton-condensate phases with distinct flavor polarizations and a temperature scale up to about 1.8 K.Read more
Dual-gated MoSe₂/hBN/WSe₂ electron-hole bilayer device D₁ with a 5-layer hBN spacer and near-60° alignment.2 characterizations4 properties5 figuresExperimentalMoSe₂Studied MaterialWSe₂Studied MaterialBNSubstrate / DielectricCCapping Or ContactExpand
Dual-gated MoSe₂/hBN/WSe₂ device D₃ fabricated with the same TMD flakes in two regions having relative twist angles of 60° and 30°.2 characterizations1 property5 figuresExperimentalMoSe₂Studied MaterialWSe₂Studied MaterialBNSubstrate / DielectricCCapping Or ContactExpand
Research paperExperimental CharacterizationObservation of two-component exciton condensates in an excitonic insulatorRuishi Qi, Qize Li, Jiahui Nie, Ruichen Xia et al.2025·10.1038/s41563-025-02334-3·arXiv:2603.15443AbstractEvidence of two-component exciton Bose-Einstein condensates in MoSe₂/hBN/WSe₂ electron-hole bilayers is reported by probing spin susceptibility with magneto-optical spectroscopy in a dilution refrigerator. The work identifies three exciton-condensate phases with distinct flavor polarizations and a temperature scale up to about 1.8 K.Read more
Dual-gated MoSe₂/hBN/WSe₂ electron-hole bilayer device D₁ with a 5-layer hBN spacer and near-60° alignment.2 characterizations4 properties5 figuresExperimentalMoSe₂Studied MaterialWSe₂Studied MaterialBNSubstrate / DielectricCCapping Or ContactExpand
Dual-gated MoSe₂/hBN/WSe₂ device D₃ fabricated with the same TMD flakes in two regions having relative twist angles of 60° and 30°.2 characterizations1 property5 figuresExperimentalMoSe₂Studied MaterialWSe₂Studied MaterialBNSubstrate / DielectricCCapping Or ContactExpand
