Research paper
Experimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Charge Gap | exciton binding energy / charge gap | 30meV | — | |||
| Critical Density | Mott density | 0.7510¹² cm⁻² | — | |||
| Transition Temperature | maximum BKT transition temperature | 1.8K | — | |||
| Intensity Ratio | eMCD enhancement relative to single-layer 2DEG | 2-3 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Charge Gap | exciton binding energy / charge gap | 30meV | — | |||
| Critical Density | Mott density | 0.7510¹² cm⁻² | — | |||
| Transition Temperature | maximum BKT transition temperature | 1.8K | — | |||
| Intensity Ratio | eMCD enhancement relative to single-layer 2DEG | 2-3 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Charge Gap | exciton binding energy / charge gap | 30meV | — | |||
| Critical Density | Mott density | 0.7510¹² cm⁻² | — | |||
| Transition Temperature | maximum BKT transition temperature | 1.8K | — | |||
| Intensity Ratio | eMCD enhancement relative to single-layer 2DEG | 2-3 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Charge Gap | exciton binding energy / charge gap | 30meV | — | |||
| Critical Density | Mott density | 0.7510¹² cm⁻² | — | |||
| Transition Temperature | maximum BKT transition temperature | 1.8K | — | |||
| Intensity Ratio | eMCD enhancement relative to single-layer 2DEG | 2-3 | — |