Research paperExperimental CharacterizationPhotoinduced Metal-to-Insulator Transitions in 2D Moiré DevicesYiliu Li, Esteban Rojas-Gatjens, Yinjie Guo, Birui Yang et al.2025·10.1103/mt2s-jkbl·arXiv:2510.21005AbstractPhotoexcitation has been utilized to control quantum matter and to uncover metastable phases far from equilibrium. Among demonstrations to date, the most common is the photo-induced transition from correlated insulators to metallic states; however, the reverse process without initial orders has not been observed. Here, we show ultrafast metal-to-insulator transition in gate-doped WS₂/WSe₂ and WSe₂/WSe₂ moiré devices using photo-thermionic hole injection from graphite gates. The resulting correlated insulators are metastable, with lifetimes exceeding microseconds. These findings establish an effective mechanism for the ultrafast control of correlated electronic phases in van der Waals heterostructures.Read more
Dual-gated WS₂/WSe₂ moiré heterobilayer device encapsulated by hBN and contacted by few-layer graphite top and bottom gates.2 characterizations2 properties2 figuresExperimentalWS₂Studied MaterialWSe₂Studied MaterialCCapping Or ContactBNSubstrate / DielectricCCapping Or ContactBNSubstrate / DielectricExpand
Dual-gated WSe₂/WSe₂ moiré homobilayer device encapsulated by hBN and contacted by few-layer graphite top and bottom gates.1 characterization1 property2 figuresExperimentalWSe₂Studied MaterialWSe₂Studied MaterialCCapping Or ContactBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationPhotoinduced Metal-to-Insulator Transitions in 2D Moiré DevicesYiliu Li, Esteban Rojas-Gatjens, Yinjie Guo, Birui Yang et al.2025·10.1103/mt2s-jkbl·arXiv:2510.21005AbstractPhotoexcitation has been utilized to control quantum matter and to uncover metastable phases far from equilibrium. Among demonstrations to date, the most common is the photo-induced transition from correlated insulators to metallic states; however, the reverse process without initial orders has not been observed. Here, we show ultrafast metal-to-insulator transition in gate-doped WS₂/WSe₂ and WSe₂/WSe₂ moiré devices using photo-thermionic hole injection from graphite gates. The resulting correlated insulators are metastable, with lifetimes exceeding microseconds. These findings establish an effective mechanism for the ultrafast control of correlated electronic phases in van der Waals heterostructures.Read more
Dual-gated WS₂/WSe₂ moiré heterobilayer device encapsulated by hBN and contacted by few-layer graphite top and bottom gates.2 characterizations2 properties2 figuresExperimentalWS₂Studied MaterialWSe₂Studied MaterialCCapping Or ContactBNSubstrate / DielectricCCapping Or ContactBNSubstrate / DielectricExpand
Dual-gated WSe₂/WSe₂ moiré homobilayer device encapsulated by hBN and contacted by few-layer graphite top and bottom gates.1 characterization1 property2 figuresExperimentalWSe₂Studied MaterialWSe₂Studied MaterialCCapping Or ContactBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationPhotoinduced Metal-to-Insulator Transitions in 2D Moiré DevicesYiliu Li, Esteban Rojas-Gatjens, Yinjie Guo, Birui Yang et al.2025·10.1103/mt2s-jkbl·arXiv:2510.21005AbstractPhotoexcitation has been utilized to control quantum matter and to uncover metastable phases far from equilibrium. Among demonstrations to date, the most common is the photo-induced transition from correlated insulators to metallic states; however, the reverse process without initial orders has not been observed. Here, we show ultrafast metal-to-insulator transition in gate-doped WS₂/WSe₂ and WSe₂/WSe₂ moiré devices using photo-thermionic hole injection from graphite gates. The resulting correlated insulators are metastable, with lifetimes exceeding microseconds. These findings establish an effective mechanism for the ultrafast control of correlated electronic phases in van der Waals heterostructures.Read more
Dual-gated WS₂/WSe₂ moiré heterobilayer device encapsulated by hBN and contacted by few-layer graphite top and bottom gates.2 characterizations2 properties2 figuresExperimentalWS₂Studied MaterialWSe₂Studied MaterialCCapping Or ContactBNSubstrate / DielectricCCapping Or ContactBNSubstrate / DielectricExpand
Dual-gated WSe₂/WSe₂ moiré homobilayer device encapsulated by hBN and contacted by few-layer graphite top and bottom gates.1 characterization1 property2 figuresExperimentalWSe₂Studied MaterialWSe₂Studied MaterialCCapping Or ContactBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationPhotoinduced Metal-to-Insulator Transitions in 2D Moiré DevicesYiliu Li, Esteban Rojas-Gatjens, Yinjie Guo, Birui Yang et al.2025·10.1103/mt2s-jkbl·arXiv:2510.21005AbstractPhotoexcitation has been utilized to control quantum matter and to uncover metastable phases far from equilibrium. Among demonstrations to date, the most common is the photo-induced transition from correlated insulators to metallic states; however, the reverse process without initial orders has not been observed. Here, we show ultrafast metal-to-insulator transition in gate-doped WS₂/WSe₂ and WSe₂/WSe₂ moiré devices using photo-thermionic hole injection from graphite gates. The resulting correlated insulators are metastable, with lifetimes exceeding microseconds. These findings establish an effective mechanism for the ultrafast control of correlated electronic phases in van der Waals heterostructures.Read more
Dual-gated WS₂/WSe₂ moiré heterobilayer device encapsulated by hBN and contacted by few-layer graphite top and bottom gates.2 characterizations2 properties2 figuresExperimentalWS₂Studied MaterialWSe₂Studied MaterialCCapping Or ContactBNSubstrate / DielectricCCapping Or ContactBNSubstrate / DielectricExpand
Dual-gated WSe₂/WSe₂ moiré homobilayer device encapsulated by hBN and contacted by few-layer graphite top and bottom gates.1 characterization1 property2 figuresExperimentalWSe₂Studied MaterialWSe₂Studied MaterialCCapping Or ContactBNSubstrate / DielectricExpand
