Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors

Zhi Wang; Li He; Bumho Kim; Bo Zhen

doi:10.48550/arxiv.2411.16635

Paper details

Research paper

Experimental Characterization

Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors

Zhi Wang, Li He, Bumho Kim, Bo Zhen

arXiv·2024·10.48550/arxiv.2411.16635·arXiv:2411.16635

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Gate-tunable TMD stack coupled to a silicon nitride photonic crystal nanocavity with graphite electrodes and pre-patterned gold electrodes.

1 preparation5 characterizations11 properties3 figures

ExperimentalMoSe₂Studied MaterialWS₂Studied MaterialBNSubstrate / DielectricCCapping Or ContactSi₃N₄Substrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricAuCapping Or Contact

Bare silicon-nitride photonic crystal cavity prior to transfer of the TMD stack.

2 properties

ReferenceSi₃N₄Substrate / DielectricSiO₂Substrate / DielectricSiSubstrate / Dielectric

Materials

MoSe₂

Studied Material

Variables

dimensionality= monolayer

studied material

WS₂

Studied Material

Variables

dimensionality

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Exciton Resonance Energy	X₀	1.646eV	MoSe₂	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Trion Resonance Energy	X±	1.616eV	MoSe₂	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Polariton Resonance Energy	UP	1.666eV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Polariton Resonance Energy	LP	1.631eV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Polariton Linewidth	UP	2.3meV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Polariton Linewidth	LP	1.8meV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Cavity Resonance Energy	bare cavity	1.736eV	Si₃N₄	Bare silicon-nitride photonic crystal cavity prior to transf		—
Cavity Linewidth	bare cavity	1.9meV	Si₃N₄	Bare silicon-nitride photonic crystal cavity prior to transf		—
Cavity Resonance Energy	damped cavity resonance	1.656eV	Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Cavity Linewidth	damped cavity linewidth	9.9meV	Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Exciton Photon Coupling Strength	g	16.8meV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Exciton Blue Shift	exciton energy shift	2meV	MoSe₂	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
All Optical Switching Energy	switching threshold	4fJ	Si₃N₄ MoSe₂	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Pl Peak Fwhm	PL peak	1meV	—	—	—	—
Pl Peak Fwhm	PL peak	2.3meV	—	—	—	—
Pl Peak Fwhm	PL peak	1.8meV	—	—	—	—
Pl Peak Fwhm	PL peak	9.9meV	—	—	—	—
Pl Peak Fwhm	PL peak	1.9meV	—	—	—	—
Pl Peak Fwhm	PL peak	2meV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Exciton Resonance Energy	X₀	1.646eV	MoSe₂	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Trion Resonance Energy	X±	1.616eV	MoSe₂	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Polariton Resonance Energy	UP	1.666eV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Polariton Resonance Energy	LP	1.631eV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Polariton Linewidth	UP	2.3meV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Polariton Linewidth	LP	1.8meV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Cavity Resonance Energy	bare cavity	1.736eV	Si₃N₄	Bare silicon-nitride photonic crystal cavity prior to transf		—
Cavity Linewidth	bare cavity	1.9meV	Si₃N₄	Bare silicon-nitride photonic crystal cavity prior to transf		—
Cavity Resonance Energy	damped cavity resonance	1.656eV	Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Cavity Linewidth	damped cavity linewidth	9.9meV	Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Exciton Photon Coupling Strength	g	16.8meV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Exciton Blue Shift	exciton energy shift	2meV	MoSe₂	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
All Optical Switching Energy	switching threshold	4fJ	Si₃N₄ MoSe₂	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Pl Peak Fwhm	PL peak	1meV	—	—	—	—
Pl Peak Fwhm	PL peak	2.3meV	—	—	—	—
Pl Peak Fwhm	PL peak	1.8meV	—	—	—	—
Pl Peak Fwhm	PL peak	9.9meV	—	—	—	—
Pl Peak Fwhm	PL peak	1.9meV	—	—	—	—
Pl Peak Fwhm	PL peak	2meV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Exciton Resonance Energy	X₀	1.646eV	MoSe₂	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Trion Resonance Energy	X±	1.616eV	MoSe₂	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Polariton Resonance Energy	UP	1.666eV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Polariton Resonance Energy	LP	1.631eV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Polariton Linewidth	UP	2.3meV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Polariton Linewidth	LP	1.8meV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Cavity Resonance Energy	bare cavity	1.736eV	Si₃N₄	Bare silicon-nitride photonic crystal cavity prior to transf		—
Cavity Linewidth	bare cavity	1.9meV	Si₃N₄	Bare silicon-nitride photonic crystal cavity prior to transf		—
Cavity Resonance Energy	damped cavity resonance	1.656eV	Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Cavity Linewidth	damped cavity linewidth	9.9meV	Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Exciton Photon Coupling Strength	g	16.8meV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Exciton Blue Shift	exciton energy shift	2meV	MoSe₂	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
All Optical Switching Energy	switching threshold	4fJ	Si₃N₄ MoSe₂	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Pl Peak Fwhm	PL peak	1meV	—	—	—	—
Pl Peak Fwhm	PL peak	2.3meV	—	—	—	—
Pl Peak Fwhm	PL peak	1.8meV	—	—	—	—
Pl Peak Fwhm	PL peak	9.9meV	—	—	—	—
Pl Peak Fwhm	PL peak	1.9meV	—	—	—	—
Pl Peak Fwhm	PL peak	2meV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Exciton Resonance Energy	X₀	1.646eV	MoSe₂	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Trion Resonance Energy	X±	1.616eV	MoSe₂	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Polariton Resonance Energy	UP	1.666eV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Polariton Resonance Energy	LP	1.631eV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Polariton Linewidth	UP	2.3meV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Polariton Linewidth	LP	1.8meV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Cavity Resonance Energy	bare cavity	1.736eV	Si₃N₄	Bare silicon-nitride photonic crystal cavity prior to transf		—
Cavity Linewidth	bare cavity	1.9meV	Si₃N₄	Bare silicon-nitride photonic crystal cavity prior to transf		—
Cavity Resonance Energy	damped cavity resonance	1.656eV	Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Cavity Linewidth	damped cavity linewidth	9.9meV	Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Exciton Photon Coupling Strength	g	16.8meV	MoSe₂ Si₃N₄	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Exciton Blue Shift	exciton energy shift	2meV	MoSe₂	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
All Optical Switching Energy	switching threshold	4fJ	Si₃N₄ MoSe₂	Gate-tunable TMD stack coupled to a silicon nitride photonic		—
Pl Peak Fwhm	PL peak	1meV	—	—	—	—
Pl Peak Fwhm	PL peak	2.3meV	—	—	—	—
Pl Peak Fwhm	PL peak	1.8meV	—	—	—	—
Pl Peak Fwhm	PL peak	9.9meV	—	—	—	—
Pl Peak Fwhm	PL peak	1.9meV	—	—	—	—
Pl Peak Fwhm	PL peak	2meV	—	—	—	—

Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors

Samples

Gate-tunable TMD stack coupled to a silicon nitride photonic crystal nanocavity with graphite electrodes and pre-patterned gold electrodes.

Bare silicon-nitride photonic crystal cavity prior to transfer of the TMD stack.

Materials

Why these are connected

Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors

Samples

Gate-tunable TMD stack coupled to a silicon nitride photonic crystal nanocavity with graphite electrodes and pre-patterned gold electrodes.

Bare silicon-nitride photonic crystal cavity prior to transfer of the TMD stack.

Materials

Why these are connected

Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors

Samples

Gate-tunable TMD stack coupled to a silicon nitride photonic crystal nanocavity with graphite electrodes and pre-patterned gold electrodes.

Bare silicon-nitride photonic crystal cavity prior to transfer of the TMD stack.

Materials

Why these are connected

Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors

Samples

Gate-tunable TMD stack coupled to a silicon nitride photonic crystal nanocavity with graphite electrodes and pre-patterned gold electrodes.

Bare silicon-nitride photonic crystal cavity prior to transfer of the TMD stack.

Materials

Why these are connected

Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors

Samples

Gate-tunable TMD stack coupled to a silicon nitride photonic crystal nanocavity with graphite electrodes and pre-patterned gold electrodes.

Bare silicon-nitride photonic crystal cavity prior to transfer of the TMD stack.

Materials

Why these are connected

Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors

Samples

Gate-tunable TMD stack coupled to a silicon nitride photonic crystal nanocavity with graphite electrodes and pre-patterned gold electrodes.

Bare silicon-nitride photonic crystal cavity prior to transfer of the TMD stack.

Materials

Why these are connected

Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors

Samples

Gate-tunable TMD stack coupled to a silicon nitride photonic crystal nanocavity with graphite electrodes and pre-patterned gold electrodes.

Bare silicon-nitride photonic crystal cavity prior to transfer of the TMD stack.

Materials

Why these are connected

Strongly nonlinear nanocavity exciton-polaritons in gate-tunable monolayer semiconductors

Samples

Gate-tunable TMD stack coupled to a silicon nitride photonic crystal nanocavity with graphite electrodes and pre-patterned gold electrodes.

Bare silicon-nitride photonic crystal cavity prior to transfer of the TMD stack.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties