Coherent Interaction of 2s and 1s Exciton States in Transition-Metal Dichalcogenide Monolayers

Paper details

Research paper

Experimental Characterization

Max Wegerhoff, Moritz Scharfstädt, Stefan Linden, Andrea Bergschneider

arXiv preprint·2025·10.5281/zenodo.15166311·arXiv:2501.12966

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

1 characterization4 properties4 figures

ExperimentalWSe₂Studied Material

1 characterization4 properties4 figures

ExperimentalMoSe₂Studied Material

WSe₂

Studied Material

Also known as

WSe₂ monolayer

studied material

MoSe₂

Studied Material

Also known as

Related documents with shared materials, methods, properties, or citations.

Coherent Interaction of 2s and 1s Exciton States in Transition-Metal Dichalcogenide Monolayers | Matter42 Literature

Type	Label	Value	Material	Sample	Condition	Source
Exciton Exciton Interaction Strength	1s-1s XX interaction strength	0.43µeV µm2	WSe₂	Charge-controlled heterostructure device with a WSe₂ monolay		—
Exciton Exciton Interaction Strength	1s-1s XX interaction strength	0.127µeV µm2	MoSe₂	Charge-controlled heterostructure device with a MoSe₂ monola		—
Interaction Strength Ratio	U2s1s/U1s1s	1.19	WSe₂	Charge-controlled heterostructure device with a WSe₂ monolay		—
Interaction Strength Ratio	U2s1s/U1s1s	1.08	MoSe₂	Charge-controlled heterostructure device with a MoSe₂ monola		—
Biexciton Binding Energy	1s-1s BX binding energy	19.9meV	WSe₂	Charge-controlled heterostructure device with a WSe₂ monolay		—
Biexciton Binding Energy	1s-1s BX binding energy	29.1meV	MoSe₂	Charge-controlled heterostructure device with a MoSe₂ monola		—
Biexciton Binding Energy	2s-1s BX binding energy	24.2meV	WSe₂	Charge-controlled heterostructure device with a WSe₂ monolay		—
Biexciton Binding Energy	2s-1s BX binding energy	29.7meV	MoSe₂	Charge-controlled heterostructure device with a MoSe₂ monola		—
Pl Peak Fwhm	PL peak	4meV	—	—	—	—
Pl Peak Fwhm	PL peak	6meV	—	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Exciton Exciton Interaction Strength	1s-1s XX interaction strength	0.43µeV µm2	WSe₂	Charge-controlled heterostructure device with a WSe₂ monolay		—
Exciton Exciton Interaction Strength	1s-1s XX interaction strength	0.127µeV µm2	MoSe₂	Charge-controlled heterostructure device with a MoSe₂ monola		—
Interaction Strength Ratio	U2s1s/U1s1s	1.19	WSe₂	Charge-controlled heterostructure device with a WSe₂ monolay		—
Interaction Strength Ratio	U2s1s/U1s1s	1.08	MoSe₂	Charge-controlled heterostructure device with a MoSe₂ monola		—
Biexciton Binding Energy	1s-1s BX binding energy	19.9meV	WSe₂	Charge-controlled heterostructure device with a WSe₂ monolay		—
Biexciton Binding Energy	1s-1s BX binding energy	29.1meV	MoSe₂	Charge-controlled heterostructure device with a MoSe₂ monola		—
Biexciton Binding Energy	2s-1s BX binding energy	24.2meV	WSe₂	Charge-controlled heterostructure device with a WSe₂ monolay		—
Biexciton Binding Energy	2s-1s BX binding energy	29.7meV	MoSe₂	Charge-controlled heterostructure device with a MoSe₂ monola		—
Pl Peak Fwhm	PL peak	4meV	—	—	—	—
Pl Peak Fwhm	PL peak	6meV	—	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Exciton Exciton Interaction Strength	1s-1s XX interaction strength	0.43µeV µm2	WSe₂	Charge-controlled heterostructure device with a WSe₂ monolay		—
Exciton Exciton Interaction Strength	1s-1s XX interaction strength	0.127µeV µm2	MoSe₂	Charge-controlled heterostructure device with a MoSe₂ monola		—
Interaction Strength Ratio	U2s1s/U1s1s	1.19	WSe₂	Charge-controlled heterostructure device with a WSe₂ monolay		—
Interaction Strength Ratio	U2s1s/U1s1s	1.08	MoSe₂	Charge-controlled heterostructure device with a MoSe₂ monola		—
Biexciton Binding Energy	1s-1s BX binding energy	19.9meV	WSe₂	Charge-controlled heterostructure device with a WSe₂ monolay		—
Biexciton Binding Energy	1s-1s BX binding energy	29.1meV	MoSe₂	Charge-controlled heterostructure device with a MoSe₂ monola		—
Biexciton Binding Energy	2s-1s BX binding energy	24.2meV	WSe₂	Charge-controlled heterostructure device with a WSe₂ monolay		—
Biexciton Binding Energy	2s-1s BX binding energy	29.7meV	MoSe₂	Charge-controlled heterostructure device with a MoSe₂ monola		—
Pl Peak Fwhm	PL peak	4meV	—	—	—	—
Pl Peak Fwhm	PL peak	6meV	—	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Exciton Exciton Interaction Strength	1s-1s XX interaction strength	0.43µeV µm2	WSe₂	Charge-controlled heterostructure device with a WSe₂ monolay		—
Exciton Exciton Interaction Strength	1s-1s XX interaction strength	0.127µeV µm2	MoSe₂	Charge-controlled heterostructure device with a MoSe₂ monola		—
Interaction Strength Ratio	U2s1s/U1s1s	1.19	WSe₂	Charge-controlled heterostructure device with a WSe₂ monolay		—
Interaction Strength Ratio	U2s1s/U1s1s	1.08	MoSe₂	Charge-controlled heterostructure device with a MoSe₂ monola		—
Biexciton Binding Energy	1s-1s BX binding energy	19.9meV	WSe₂	Charge-controlled heterostructure device with a WSe₂ monolay		—
Biexciton Binding Energy	1s-1s BX binding energy	29.1meV	MoSe₂	Charge-controlled heterostructure device with a MoSe₂ monola		—
Biexciton Binding Energy	2s-1s BX binding energy	24.2meV	WSe₂	Charge-controlled heterostructure device with a WSe₂ monolay		—
Biexciton Binding Energy	2s-1s BX binding energy	29.7meV	MoSe₂	Charge-controlled heterostructure device with a MoSe₂ monola		—
Pl Peak Fwhm	PL peak	4meV	—	—	—	—
Pl Peak Fwhm	PL peak	6meV	—	—	—	—