Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations1 characterization10 properties2 figures
5 preparations1 characterization4 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | Hg0.3Cd0.7Te cap layer thickness | 50nm | — | |||
| Layer Thickness | Hg0.79Cd0.21Te active layer thickness | 800nm | — | |||
| Layer Thickness | HgTe quantum well thickness | 8nm | — | |||
| Layer Thickness | Si₃N₄ top-gate dielectric thickness | 140nm | — | |||
| Device Width | TLM stripe width | 30um | — | |||
| Device Dimensions | FET device size | 5×3um2 | — | |||
| Current Voltage Linearity Range | I-V linear range | 0 to 150mV | — | |||
| Noise Spectral Exponent | 1/f^γ exponent | 1.1-1.3 | — | |||
| Measurement Frequency | noise evaluation frequency | 2Hz | — | |||
| Current Noise Scaling | spectral noise density scaling | I^2 | — | |||
| Electron Concentration Trend | electron concentration temperature trend | increases with temperature | — | |||
| Mobility Trend | electron mobility temperature trend | decreases with temperature | — | |||
| Noise Temperature Dependence | 1/f noise temperature dependence | weak | — | |||
| Optical Band Gap | band gap | 0.3eV | — | — | — | — |
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Fractional focusing peaks and collective dynamics in two-dimensional Fermi liquids
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations1 characterization10 properties2 figures
5 preparations1 characterization4 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | Hg0.3Cd0.7Te cap layer thickness | 50nm | — | |||
| Layer Thickness | Hg0.79Cd0.21Te active layer thickness | 800nm | — | |||
| Layer Thickness | HgTe quantum well thickness | 8nm | — | |||
| Layer Thickness | Si₃N₄ top-gate dielectric thickness | 140nm | — | |||
| Device Width | TLM stripe width | 30um | — | |||
| Device Dimensions | FET device size | 5×3um2 | — | |||
| Current Voltage Linearity Range | I-V linear range | 0 to 150mV | — | |||
| Noise Spectral Exponent | 1/f^γ exponent | 1.1-1.3 | — | |||
| Measurement Frequency | noise evaluation frequency | 2Hz | — | |||
| Current Noise Scaling | spectral noise density scaling | I^2 | — | |||
| Electron Concentration Trend | electron concentration temperature trend | increases with temperature | — | |||
| Mobility Trend | electron mobility temperature trend | decreases with temperature | — | |||
| Noise Temperature Dependence | 1/f noise temperature dependence | weak | — | |||
| Optical Band Gap | band gap | 0.3eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Fractional focusing peaks and collective dynamics in two-dimensional Fermi liquids
Resonant and off-resonant magnetoacoustic waves in epitaxial Fe3Si/GaAs hybrid structures
Spin-polarized lasing in a photonic lattice
Fabrication of Nanostructured GaAs/AlGaAs Waveguide for Low-Density Polariton Condensation from a Bound State in the Continuum
Electroluminescence in n-type GaAs unipolar nanoLEDs
External busbars for improving current generation in multijunction solar cells
Nonlinear Optical Microscopy of Semiconductor–Metal Nanocavities
Indium-Bond-And-Stop-Etch (IBASE) Technique for Dual-side Processing of Thin High-mobility GaAs/AlGaAs Epitaxial Layers
Unveiling the electron-nuclear spin dynamics in an n-doped InGaAs epilayer by spin noise spectroscopy
Effect of geometry on the frequency limit of GaAs/AlGaAs 2-Dimensional Electron Gas (2DEG) Hall effect sensors
Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect
Quantum dot single photon source on SiN integrated with coupled crossover waveguides
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations1 characterization10 properties2 figures
5 preparations1 characterization4 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | Hg0.3Cd0.7Te cap layer thickness | 50nm | — | |||
| Layer Thickness | Hg0.79Cd0.21Te active layer thickness | 800nm | — | |||
| Layer Thickness | HgTe quantum well thickness | 8nm | — | |||
| Layer Thickness | Si₃N₄ top-gate dielectric thickness | 140nm | — | |||
| Device Width | TLM stripe width | 30um | — | |||
| Device Dimensions | FET device size | 5×3um2 | — | |||
| Current Voltage Linearity Range | I-V linear range | 0 to 150mV | — | |||
| Noise Spectral Exponent | 1/f^γ exponent | 1.1-1.3 | — | |||
| Measurement Frequency | noise evaluation frequency | 2Hz | — | |||
| Current Noise Scaling | spectral noise density scaling | I^2 | — | |||
| Electron Concentration Trend | electron concentration temperature trend | increases with temperature | — | |||
| Mobility Trend | electron mobility temperature trend | decreases with temperature | — | |||
| Noise Temperature Dependence | 1/f noise temperature dependence | weak | — | |||
| Optical Band Gap | band gap | 0.3eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Fractional focusing peaks and collective dynamics in two-dimensional Fermi liquids
Resonant and off-resonant magnetoacoustic waves in epitaxial Fe3Si/GaAs hybrid structures
Spin-polarized lasing in a photonic lattice
Fabrication of Nanostructured GaAs/AlGaAs Waveguide for Low-Density Polariton Condensation from a Bound State in the Continuum
Electroluminescence in n-type GaAs unipolar nanoLEDs
External busbars for improving current generation in multijunction solar cells
Nonlinear Optical Microscopy of Semiconductor–Metal Nanocavities
Indium-Bond-And-Stop-Etch (IBASE) Technique for Dual-side Processing of Thin High-mobility GaAs/AlGaAs Epitaxial Layers
Unveiling the electron-nuclear spin dynamics in an n-doped InGaAs epilayer by spin noise spectroscopy
Effect of geometry on the frequency limit of GaAs/AlGaAs 2-Dimensional Electron Gas (2DEG) Hall effect sensors
Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect
Quantum dot single photon source on SiN integrated with coupled crossover waveguides
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations1 characterization10 properties2 figures
5 preparations1 characterization4 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | Hg0.3Cd0.7Te cap layer thickness | 50nm | — | |||
| Layer Thickness | Hg0.79Cd0.21Te active layer thickness | 800nm | — | |||
| Layer Thickness | HgTe quantum well thickness | 8nm | — | |||
| Layer Thickness | Si₃N₄ top-gate dielectric thickness | 140nm | — | |||
| Device Width | TLM stripe width | 30um | — | |||
| Device Dimensions | FET device size | 5×3um2 | — | |||
| Current Voltage Linearity Range | I-V linear range | 0 to 150mV | — | |||
| Noise Spectral Exponent | 1/f^γ exponent | 1.1-1.3 | — | |||
| Measurement Frequency | noise evaluation frequency | 2Hz | — | |||
| Current Noise Scaling | spectral noise density scaling | I^2 | — | |||
| Electron Concentration Trend | electron concentration temperature trend | increases with temperature | — | |||
| Mobility Trend | electron mobility temperature trend | decreases with temperature | — | |||
| Noise Temperature Dependence | 1/f noise temperature dependence | weak | — | |||
| Optical Band Gap | band gap | 0.3eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Fractional focusing peaks and collective dynamics in two-dimensional Fermi liquids
Resonant and off-resonant magnetoacoustic waves in epitaxial Fe3Si/GaAs hybrid structures
Spin-polarized lasing in a photonic lattice
Fabrication of Nanostructured GaAs/AlGaAs Waveguide for Low-Density Polariton Condensation from a Bound State in the Continuum
Electroluminescence in n-type GaAs unipolar nanoLEDs
External busbars for improving current generation in multijunction solar cells
Nonlinear Optical Microscopy of Semiconductor–Metal Nanocavities
Indium-Bond-And-Stop-Etch (IBASE) Technique for Dual-side Processing of Thin High-mobility GaAs/AlGaAs Epitaxial Layers
Unveiling the electron-nuclear spin dynamics in an n-doped InGaAs epilayer by spin noise spectroscopy
Effect of geometry on the frequency limit of GaAs/AlGaAs 2-Dimensional Electron Gas (2DEG) Hall effect sensors
Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect
Quantum dot single photon source on SiN integrated with coupled crossover waveguides
