Abstract

Phase selectivity of nearly degenerate crystalline polymorphs during epitaxial growth can be challenging yet is critical for targeting physical properties. This work shows that the surface termination of lattice-matched InP substrates can program phase selectivity of MnTe polymorphs during molecular beam epitaxy: NiAs MnTe is stabilized on In-terminated InP(111)A, while ZnS MnTe is stabilized on P-terminated InP(111)B. Electron microscopy, photoemission spectroscopy, and reflection high-energy electron diffraction indicate that phase selection is triggered at the interface and proceeds along the growing surface. First-principles calculations suggest interfacial termination and strain significantly affect interfacial energy, stabilizing NiAs on In-terminated surfaces and ZnS on P-terminated surfaces.

Abstract

Phase selectivity of nearly degenerate crystalline polymorphs during epitaxial growth can be challenging yet is critical for targeting physical properties. This work shows that the surface termination of lattice-matched InP substrates can program phase selectivity of MnTe polymorphs during molecular beam epitaxy: NiAs MnTe is stabilized on In-terminated InP(111)A, while ZnS MnTe is stabilized on P-terminated InP(111)B. Electron microscopy, photoemission spectroscopy, and reflection high-energy electron diffraction indicate that phase selection is triggered at the interface and proceeds along the growing surface. First-principles calculations suggest interfacial termination and strain significantly affect interfacial energy, stabilizing NiAs on In-terminated surfaces and ZnS on P-terminated surfaces.

Abstract

Phase selectivity of nearly degenerate crystalline polymorphs during epitaxial growth can be challenging yet is critical for targeting physical properties. This work shows that the surface termination of lattice-matched InP substrates can program phase selectivity of MnTe polymorphs during molecular beam epitaxy: NiAs MnTe is stabilized on In-terminated InP(111)A, while ZnS MnTe is stabilized on P-terminated InP(111)B. Electron microscopy, photoemission spectroscopy, and reflection high-energy electron diffraction indicate that phase selection is triggered at the interface and proceeds along the growing surface. First-principles calculations suggest interfacial termination and strain significantly affect interfacial energy, stabilizing NiAs on In-terminated surfaces and ZnS on P-terminated surfaces.

Abstract

Phase selectivity of nearly degenerate crystalline polymorphs during epitaxial growth can be challenging yet is critical for targeting physical properties. This work shows that the surface termination of lattice-matched InP substrates can program phase selectivity of MnTe polymorphs during molecular beam epitaxy: NiAs MnTe is stabilized on In-terminated InP(111)A, while ZnS MnTe is stabilized on P-terminated InP(111)B. Electron microscopy, photoemission spectroscopy, and reflection high-energy electron diffraction indicate that phase selection is triggered at the interface and proceeds along the growing surface. First-principles calculations suggest interfacial termination and strain significantly affect interfacial energy, stabilizing NiAs on In-terminated surfaces and ZnS on P-terminated surfaces.