Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Wayesh Qarony; Ahmed S. Mayet; Ekaterina Ponizovskaya Devine; Soroush Ghandiparsi; Cesar Bartolo-Perez; Ahasan Ahamed; Amita Rawat; Hasina H. Mamtaz; Toshishige Yamada; Shih-Yuan Wang; M. Saif Islam

doi:10.48550/arxiv.2306.05170

Research paper

Experimental CharacterizationOther Computational

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi et al.

2023·10.48550/arxiv.2306.05170·arXiv:2306.05170

Research paper

Experimental CharacterizationOther Computational

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi et al.

2023·10.48550/arxiv.2306.05170·arXiv:2306.05170

Research paper

Experimental CharacterizationOther Computational

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi et al.

2023·10.48550/arxiv.2306.05170·arXiv:2306.05170

Research paper

Experimental CharacterizationOther Computational

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi et al.

2023·10.48550/arxiv.2306.05170·arXiv:2306.05170

Research paper

Experimental CharacterizationOther Computational

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi et al.

2023·10.48550/arxiv.2306.05170·arXiv:2306.05170

Research paper

Experimental CharacterizationOther Computational

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi et al.

2023·10.48550/arxiv.2306.05170·arXiv:2306.05170

Research paper

Experimental CharacterizationOther Computational

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi et al.

2023·10.48550/arxiv.2306.05170·arXiv:2306.05170

Research paper

Experimental CharacterizationOther Computational

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi et al.

2023·10.48550/arxiv.2306.05170·arXiv:2306.05170

CMOS-compatible metal-semiconductor-metal photodetector fabricated on a 1 µm-thick silicon-on-insulator active layer, with and without periodic photon-trapping cylindrical hole arrays; interdigitated aluminum contacts on the top silicon mesa.

3 preparations4 characterizations4 properties2 figures

ExperimentalSiStudied MaterialAlCapping Or ContactSiO₂Substrate / Dielectricsilicon dioxide on silicon substrateSubstrate / Dielectric

CMOS-compatible metal-semiconductor-metal photodetector fabricated on a 1 µm-thick silicon-on-insulator active layer, with and without periodic photon-trapping cylindrical hole arrays; interdigitated aluminum contacts on the top silicon mesa.

3 preparations4 characterizations4 properties2 figures

ExperimentalSiStudied MaterialAlCapping Or ContactSiO₂Substrate / Dielectricsilicon dioxide on silicon substrateSubstrate / Dielectric

CMOS-compatible metal-semiconductor-metal photodetector fabricated on a 1 µm-thick silicon-on-insulator active layer, with and without periodic photon-trapping cylindrical hole arrays; interdigitated aluminum contacts on the top silicon mesa.

3 preparations4 characterizations4 properties2 figures

ExperimentalSiStudied MaterialAlCapping Or ContactSiO₂Substrate / Dielectricsilicon dioxide on silicon substrateSubstrate / Dielectric

CMOS-compatible metal-semiconductor-metal photodetector fabricated on a 1 µm-thick silicon-on-insulator active layer, with and without periodic photon-trapping cylindrical hole arrays; interdigitated aluminum contacts on the top silicon mesa.

3 preparations4 characterizations4 properties2 figures

ExperimentalSiStudied MaterialAlCapping Or ContactSiO₂Substrate / Dielectricsilicon dioxide on silicon substrateSubstrate / Dielectric

Type	Label	Value	Material	Sample	Source
Absorption Efficiency Enhancement	absorption efficiency enhancement at 800 nm	80%	Si	CMOS-compatible metal-semiconductor-metal photodetector fabr	—
Absorption Efficiency Enhancement	absorption efficiency enhancement at 850 nm	85%	Si	CMOS-compatible metal-semiconductor-metal photodetector fabr	—
Absorption Efficiency Enhancement	absorption efficiency enhancement at 905 nm	65%	Si	CMOS-compatible metal-semiconductor-metal photodetector fabr	—
Capacitance Reduction	device capacitance reduction	20%	Si	CMOS-compatible metal-semiconductor-metal photodetector fabr	—

Type	Label	Value	Material	Sample	Source
Absorption Efficiency Enhancement	absorption efficiency enhancement at 800 nm	80%	Si	CMOS-compatible metal-semiconductor-metal photodetector fabr	—
Absorption Efficiency Enhancement	absorption efficiency enhancement at 850 nm	85%	Si	CMOS-compatible metal-semiconductor-metal photodetector fabr	—
Absorption Efficiency Enhancement	absorption efficiency enhancement at 905 nm	65%	Si	CMOS-compatible metal-semiconductor-metal photodetector fabr	—
Capacitance Reduction	device capacitance reduction	20%	Si	CMOS-compatible metal-semiconductor-metal photodetector fabr	—

Type	Label	Value	Material	Sample	Source
Absorption Efficiency Enhancement	absorption efficiency enhancement at 800 nm	80%	Si	CMOS-compatible metal-semiconductor-metal photodetector fabr	—
Absorption Efficiency Enhancement	absorption efficiency enhancement at 850 nm	85%	Si	CMOS-compatible metal-semiconductor-metal photodetector fabr	—
Absorption Efficiency Enhancement	absorption efficiency enhancement at 905 nm	65%	Si	CMOS-compatible metal-semiconductor-metal photodetector fabr	—
Capacitance Reduction	device capacitance reduction	20%	Si	CMOS-compatible metal-semiconductor-metal photodetector fabr	—

Type	Label	Value	Material	Sample	Source
Absorption Efficiency Enhancement	absorption efficiency enhancement at 800 nm	80%	Si	CMOS-compatible metal-semiconductor-metal photodetector fabr	—
Absorption Efficiency Enhancement	absorption efficiency enhancement at 850 nm	85%	Si	CMOS-compatible metal-semiconductor-metal photodetector fabr	—
Absorption Efficiency Enhancement	absorption efficiency enhancement at 905 nm	65%	Si	CMOS-compatible metal-semiconductor-metal photodetector fabr	—
Capacitance Reduction	device capacitance reduction	20%	Si	CMOS-compatible metal-semiconductor-metal photodetector fabr	—

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Samples

CMOS-compatible metal-semiconductor-metal photodetector fabricated on a 1 µm-thick silicon-on-insulator active layer, with and without periodic photon-trapping cylindrical hole arrays; interdigitated aluminum contacts on the top silicon mesa.

Materials

Processing

Characterization

Properties

Simulations

Why these are connected

Samples

CMOS-compatible metal-semiconductor-metal photodetector fabricated on a 1 µm-thick silicon-on-insulator active layer, with and without periodic photon-trapping cylindrical hole arrays; interdigitated aluminum contacts on the top silicon mesa.

Materials

Processing

Characterization

Properties

Simulations

Why these are connected

Samples

CMOS-compatible metal-semiconductor-metal photodetector fabricated on a 1 µm-thick silicon-on-insulator active layer, with and without periodic photon-trapping cylindrical hole arrays; interdigitated aluminum contacts on the top silicon mesa.

Materials

Processing

Characterization

Properties

Simulations

Why these are connected

Samples

CMOS-compatible metal-semiconductor-metal photodetector fabricated on a 1 µm-thick silicon-on-insulator active layer, with and without periodic photon-trapping cylindrical hole arrays; interdigitated aluminum contacts on the top silicon mesa.

Materials

Processing

Characterization

Properties

Simulations

Why these are connected