Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 properties
2 preparations2 characterizations7 properties1 figure
1 preparation2 characterizations4 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Simulation Overlap | III-V/SiN modal overlap | 96% | — | |||
| Alignment Angle | recess etch angle | 85deg | — | |||
| Facet Distance | minimum III-V to SiN facet distance | 450nm | — | |||
| Coupling Efficiency | coupling efficiency lower bound within alignment specification | 50% | — | |||
| Coupling Efficiency | coupling efficiency upper bound within alignment specification | 86% | — | |||
| Optical Output Power | coupon laser output power | 70mW | — | |||
| Internal Gain | SOA internal gain | 30dB | — | |||
| Continuous Wave Output Power | CW output power | 4mW | — | |||
| Fundamental Rf Linewidth | fundamental RF linewidth | 519Hz | — | |||
| Pulse Energy | pulse energy | 0.27pJ | — |
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 properties
2 preparations2 characterizations7 properties1 figure
1 preparation2 characterizations4 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Simulation Overlap | III-V/SiN modal overlap | 96% | — | |||
| Alignment Angle | recess etch angle | 85deg | — | |||
| Facet Distance | minimum III-V to SiN facet distance | 450nm | — | |||
| Coupling Efficiency | coupling efficiency lower bound within alignment specification | 50% | — | |||
| Coupling Efficiency | coupling efficiency upper bound within alignment specification | 86% | — | |||
| Optical Output Power | coupon laser output power | 70mW | — | |||
| Internal Gain | SOA internal gain | 30dB | — | |||
| Continuous Wave Output Power | CW output power | 4mW | — | |||
| Fundamental Rf Linewidth | fundamental RF linewidth | 519Hz | — | |||
| Pulse Energy | pulse energy | 0.27pJ | — |
Related documents with shared materials, methods, properties, or citations.
Ultrabroadband thin-film lithium tantalate modulator for high-speed communications
GRAPHENE-BASED DETECTOR FOR W-BAND AND TERAHERTZ RADIATIONS
Ultrastable lasers: investigations of crystalline mirrors and closed cycle cooling at 124 K
CIRCUIT BOARD INCLUDING A GRAPHENE FILM HAVING CONTACT REGION COVERING A RECESSED REGION AND A PATTERNED METAL FILM COVERING THE CONTACT REGION AND IN DIRECT ELECTRICAL CONTACT THERWITH, AND DEVICE INCLUDING SAME
Isolation and characterization of atomically thin mica phyllosilicates
Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures
Molecularly Thin Polyaramid Nanomechanical Resonators
GAN-BASED, LATERAL-CONDUCTION, ELECTRONIC DEVICE WITH IMPROVED METALLIC LAYERS LAYOUT
Direct Nanoscale Pyroelectric Characterization of a CuInP2S6 van der Waals Nanogenerator
Rb2Ti2O5: a layered ionic conductor at the sub-micrometer scale
Monolithic Integration of Embedded III-V Lasers on SOI
Fourth-harmonic UV light generation in integrated silicon nitride microresonators
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 properties
2 preparations2 characterizations7 properties1 figure
1 preparation2 characterizations4 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Simulation Overlap | III-V/SiN modal overlap | 96% | — | |||
| Alignment Angle | recess etch angle | 85deg | — | |||
| Facet Distance | minimum III-V to SiN facet distance | 450nm | — | |||
| Coupling Efficiency | coupling efficiency lower bound within alignment specification | 50% | — | |||
| Coupling Efficiency | coupling efficiency upper bound within alignment specification | 86% | — | |||
| Optical Output Power | coupon laser output power | 70mW | — | |||
| Internal Gain | SOA internal gain | 30dB | — | |||
| Continuous Wave Output Power | CW output power | 4mW | — | |||
| Fundamental Rf Linewidth | fundamental RF linewidth | 519Hz | — | |||
| Pulse Energy | pulse energy | 0.27pJ | — |
Related documents with shared materials, methods, properties, or citations.
Ultrabroadband thin-film lithium tantalate modulator for high-speed communications
GRAPHENE-BASED DETECTOR FOR W-BAND AND TERAHERTZ RADIATIONS
Ultrastable lasers: investigations of crystalline mirrors and closed cycle cooling at 124 K
CIRCUIT BOARD INCLUDING A GRAPHENE FILM HAVING CONTACT REGION COVERING A RECESSED REGION AND A PATTERNED METAL FILM COVERING THE CONTACT REGION AND IN DIRECT ELECTRICAL CONTACT THERWITH, AND DEVICE INCLUDING SAME
Isolation and characterization of atomically thin mica phyllosilicates
Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures
Molecularly Thin Polyaramid Nanomechanical Resonators
GAN-BASED, LATERAL-CONDUCTION, ELECTRONIC DEVICE WITH IMPROVED METALLIC LAYERS LAYOUT
Direct Nanoscale Pyroelectric Characterization of a CuInP2S6 van der Waals Nanogenerator
Rb2Ti2O5: a layered ionic conductor at the sub-micrometer scale
Monolithic Integration of Embedded III-V Lasers on SOI
Fourth-harmonic UV light generation in integrated silicon nitride microresonators
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 properties
2 preparations2 characterizations7 properties1 figure
1 preparation2 characterizations4 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Simulation Overlap | III-V/SiN modal overlap | 96% | — | |||
| Alignment Angle | recess etch angle | 85deg | — | |||
| Facet Distance | minimum III-V to SiN facet distance | 450nm | — | |||
| Coupling Efficiency | coupling efficiency lower bound within alignment specification | 50% | — | |||
| Coupling Efficiency | coupling efficiency upper bound within alignment specification | 86% | — | |||
| Optical Output Power | coupon laser output power | 70mW | — | |||
| Internal Gain | SOA internal gain | 30dB | — | |||
| Continuous Wave Output Power | CW output power | 4mW | — | |||
| Fundamental Rf Linewidth | fundamental RF linewidth | 519Hz | — | |||
| Pulse Energy | pulse energy | 0.27pJ | — |
Related documents with shared materials, methods, properties, or citations.
Ultrabroadband thin-film lithium tantalate modulator for high-speed communications
GRAPHENE-BASED DETECTOR FOR W-BAND AND TERAHERTZ RADIATIONS
Ultrastable lasers: investigations of crystalline mirrors and closed cycle cooling at 124 K
CIRCUIT BOARD INCLUDING A GRAPHENE FILM HAVING CONTACT REGION COVERING A RECESSED REGION AND A PATTERNED METAL FILM COVERING THE CONTACT REGION AND IN DIRECT ELECTRICAL CONTACT THERWITH, AND DEVICE INCLUDING SAME
Isolation and characterization of atomically thin mica phyllosilicates
Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures
Molecularly Thin Polyaramid Nanomechanical Resonators
GAN-BASED, LATERAL-CONDUCTION, ELECTRONIC DEVICE WITH IMPROVED METALLIC LAYERS LAYOUT
Direct Nanoscale Pyroelectric Characterization of a CuInP2S6 van der Waals Nanogenerator
Rb2Ti2O5: a layered ionic conductor at the sub-micrometer scale
Monolithic Integration of Embedded III-V Lasers on SOI
Fourth-harmonic UV light generation in integrated silicon nitride microresonators
